JPH0448645U - - Google Patents
Info
- Publication number
- JPH0448645U JPH0448645U JP9175490U JP9175490U JPH0448645U JP H0448645 U JPH0448645 U JP H0448645U JP 9175490 U JP9175490 U JP 9175490U JP 9175490 U JP9175490 U JP 9175490U JP H0448645 U JPH0448645 U JP H0448645U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- diac
- impurity layer
- highly concentrated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9175490U JPH0448645U (th) | 1990-08-31 | 1990-08-31 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9175490U JPH0448645U (th) | 1990-08-31 | 1990-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0448645U true JPH0448645U (th) | 1992-04-24 |
Family
ID=31827664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9175490U Pending JPH0448645U (th) | 1990-08-31 | 1990-08-31 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0448645U (th) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63102378A (ja) * | 1986-10-20 | 1988-05-07 | Matsushita Electronics Corp | 静電破壊防止用ダイオ−ド |
JPS6423577A (en) * | 1987-07-20 | 1989-01-26 | Matsushita Electronics Corp | Diode for prevention of electrostatic breakdown |
JPH0220354B2 (th) * | 1985-06-13 | 1990-05-09 | Kei Esu Emu Fuasuningu Shisutemusu Inc | |
JPH02134873A (ja) * | 1988-11-15 | 1990-05-23 | Nec Corp | トリガダイオード |
JPH03161976A (ja) * | 1989-11-21 | 1991-07-11 | Nec Kansai Ltd | プレーナ型ダイアック及びその製造方法 |
-
1990
- 1990-08-31 JP JP9175490U patent/JPH0448645U/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0220354B2 (th) * | 1985-06-13 | 1990-05-09 | Kei Esu Emu Fuasuningu Shisutemusu Inc | |
JPS63102378A (ja) * | 1986-10-20 | 1988-05-07 | Matsushita Electronics Corp | 静電破壊防止用ダイオ−ド |
JPS6423577A (en) * | 1987-07-20 | 1989-01-26 | Matsushita Electronics Corp | Diode for prevention of electrostatic breakdown |
JPH02134873A (ja) * | 1988-11-15 | 1990-05-23 | Nec Corp | トリガダイオード |
JPH03161976A (ja) * | 1989-11-21 | 1991-07-11 | Nec Kansai Ltd | プレーナ型ダイアック及びその製造方法 |