JPH0447801A - Variable phase device - Google Patents

Variable phase device

Info

Publication number
JPH0447801A
JPH0447801A JP15681290A JP15681290A JPH0447801A JP H0447801 A JPH0447801 A JP H0447801A JP 15681290 A JP15681290 A JP 15681290A JP 15681290 A JP15681290 A JP 15681290A JP H0447801 A JPH0447801 A JP H0447801A
Authority
JP
Japan
Prior art keywords
diode
variable capacitance
high frequency
variable
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15681290A
Other languages
Japanese (ja)
Inventor
Tomoya Kaneko
友哉 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15681290A priority Critical patent/JPH0447801A/en
Publication of JPH0447801A publication Critical patent/JPH0447801A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To keep almost constant a return loss when varying a phase by connecting a resistor having a prescribed resistance value parallelly to a variable capacity diode. CONSTITUTION:High frequency power inputted from an input terminal 1 is inputted through a capacitor 4 to a variable capacity diode 7. A negative voltage impressed from a direct current impressing terminal 3 is impressed through a high impedance line 5 to the anode of the diode 7. The high frequency power to be inputted to the diode 7 is outputted from the terminal 1 after being reflected at a reflecting phase corresponding to the capacity of the diode 7 to be changed by this impressed voltage. A resistor 6 and a capacitor 8 for high frequency ground are connected parallelly to the diode 7. When this resistor 6 (a resistance value R expressed by a formula I) is connected, the change in the reflection coefficient of the diode 7 can be kept almost constant.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は可変位相器に関し、特に高周波用に使用され、
電圧制御型可変容量ダイオードを用いて高周波信号の位
相を変化させる可変位相器に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a variable phase shifter, which is particularly used for high frequencies;
This invention relates to a variable phase shifter that changes the phase of a high frequency signal using a voltage controlled variable capacitance diode.

〔従来の技術〕[Conventional technology]

従来、この種の可変位相器は第6図の回路図に示すよう
に高周波入力端子11、高周波出力端子12、高周波入
力および出力端子11.12間のアイソレーションを行
うサーキュレータ16、直流遮断用のコンデンサ14、
可変容量ダイオード17、この可変容量ダイオード17
に高周波に対する高インピーダンス回路15を介して直
流電圧を供給する直流印加用の端子13から構成されて
いる。
Conventionally, this type of variable phase shifter, as shown in the circuit diagram of FIG. capacitor 14,
Variable capacitance diode 17, this variable capacitance diode 17
It is comprised of a DC voltage application terminal 13 for supplying a DC voltage via a high impedance circuit 15 for high frequencies.

第6図に示した従来例の動作は、カソード電極又はアノ
ード電極のどちらか一方を接地した可変容量ダイオード
17の接地されていない側と電極に直流電圧と端子13
から印加し可変する事で可変容量ダイオード17の容量
を制御し、ダイオードの反射インピーダンスを変化させ
て高周波の反射位相を変化させていた。また、可変位相
器として使用する場合に高周波電力入力端子11と出力
端子12を独立させるなめに、サーキュレータ16また
はハイブリッドを用いている。ここで、可変容量ダイオ
ードの容量変化Cvに対するダイオードからの反射減衰
量の特性は第5図(a)の特性図の従来特性に示すよう
に大幅に反射減衰量が変化していた。
The operation of the conventional example shown in FIG.
The capacitance of the variable capacitance diode 17 is controlled by applying and varying the voltage, and the reflection impedance of the diode is changed to change the reflection phase of the high frequency. Furthermore, in order to make the high frequency power input terminal 11 and the output terminal 12 independent when used as a variable phase shifter, a circulator 16 or a hybrid is used. Here, the characteristic of the amount of return loss from the diode with respect to the capacitance change Cv of the variable capacitance diode is that the amount of return loss changes significantly as shown in the conventional characteristic shown in the characteristic diagram of FIG. 5(a).

〔発明が解決しようとする課題〕 上述した従来の可変位相器は高周波入力端子から入力さ
れた高周波電力が可変容量ダイオードに入力され直流印
が電圧に応じたダイオードの容量変化により反対される
高周波電力が大幅に変化するので、位相器としての出力
レベルが変動するとともに損失も増大する欠点がある。
[Problems to be Solved by the Invention] The conventional variable phase shifter described above has a high frequency power input from a high frequency input terminal that is input to a variable capacitance diode, and the DC mark is reversed by the change in capacitance of the diode according to the voltage. This has the disadvantage that the output level of the phase shifter fluctuates and the loss also increases because the phase shifter changes significantly.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の可変位相器は、可変容量ダイオードと、この可
変容量ダイオードの容量を変化させるために直流電圧を
印加する直流電圧端子と、前記可変容量ダイオードに高
周波電力を入力し、前記直流電圧の変化に応じて高周波
反射電力を出力する高周波入出力端子とを有する可変位
相器において、前記可変容量ダイオードと並列に接続さ
れる抵抗の抵抗値RAが可変位相器本体の特性インピー
ダンスをZoとし、前記可変容量ダイオードの等価直列
抵抗をRとすると、 なる抵抗値になっている。
The variable phase shifter of the present invention includes a variable capacitance diode, a DC voltage terminal to which a DC voltage is applied to change the capacitance of the variable capacitance diode, and a high frequency power input to the variable capacitance diode to change the DC voltage. In the variable phase shifter, the resistance value RA of the resistor connected in parallel with the variable capacitance diode has a characteristic impedance of the variable phase shifter main body as Zo, and If the equivalent series resistance of the capacitive diode is R, then the resistance value is as follows.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図(a)は本発明の一実施例の回路図、第1図(b
)は可変容量ダイオードの等価回路図である。高周波入
力端子1から入力された高周波電力は、直流しゃ断のた
めのコンデンサ4を介して可変容量ダイオード7に入力
される。可変容量ダイオード7のアノードには直流印加
端子3がら印加された負の電圧が高周波チョークである
高インピーダンス線路5を介して印加される。
FIG. 1(a) is a circuit diagram of an embodiment of the present invention, and FIG. 1(b) is a circuit diagram of an embodiment of the present invention.
) is an equivalent circuit diagram of a variable capacitance diode. High frequency power input from the high frequency input terminal 1 is input to the variable capacitance diode 7 via the capacitor 4 for cutting off DC current. A negative voltage applied from the DC application terminal 3 is applied to the anode of the variable capacitance diode 7 via a high impedance line 5 which is a high frequency choke.

可変容量ダイオード7に入力される高周波電力は、この
印加電圧により変化するダイオード7の容量に応じた反
射位相で反射され高周波入力端子1から出力される。ま
た、可変容量ダイオード7と並列に抵抗6と高周波接地
用コンデンサ8とが接続されているが、抵抗6の抵抗値
RAはダイオード7の等価直列抵抗をRとし、この位相
器の特性インピーダンスをZ。とすると(3〉式で表さ
れる値となるように選択される。
The high frequency power input to the variable capacitance diode 7 is reflected at a reflection phase according to the capacitance of the diode 7, which changes with this applied voltage, and is output from the high frequency input terminal 1. Further, a resistor 6 and a high-frequency grounding capacitor 8 are connected in parallel with the variable capacitance diode 7, and the resistance value RA of the resistor 6 is determined by setting the equivalent series resistance of the diode 7 to R, and the characteristic impedance of this phase shifter to Z. . Then, the value is selected to be the value expressed by the equation (3>).

今、この抵抗6(抵抗値RA)が接続された場合には、
接続されない場合に比して可変容量ダイオード7の反射
係数の変化をほぼ一定に保つことができる。この状態を
第5図の本実施例になるインピーダンスチャート、すな
わち抵抗6を接続した場合と第4図の従来例になるイン
ピーダンスチャート、すなわち抵抗6を接続しない場合
とで比較して説明する。可変容量ダイオード7の容量最
小の点Aの反射係数1「A1と容量最大の点Bの反射係
数1「B 1の変化は第3図のインピーダンスチャート
上の等リアクタンス円上を動くため、容量に応じて反射
係数、すなわち反射減衰量が変化してしまう。すなわち
、可変容量ダイオードを見込む反射インピーダンスの容
量を変化させた場合の軌跡は容量最小の点Aの反射係数
1r’AIと容量最大の点Bの反射係数IT”itとが
異なる。ここで抵抗RAを追加する事により、第4図に
示すごとく容量最小の点AのインピーダンスA′に移動
し、位相可変時の反射係数をほぼ一定値に保つことがで
きる。このような動作を行う可変位相器の可変容量ダイ
オードの容量変化Cvをパラメータとして反射減衰量と
反射位相の計算例を従来例と対比して第5図(a)、(
b)の特性図に示す、また、このような可変位相器の応
用例として第2図に示すように3dB分岐形のハイブリ
ット回路9に可変位相器を2個接続することにより、高
周波入力端子1から入力された信号は可変容量ダイオー
ド7Aと可変容量7Bによりそれぞれ移相された高周波
がお互いに損失偏差なく同相に合成されて出力端子2か
ら取り出すことができる。
Now, if this resistor 6 (resistance value RA) is connected,
The change in the reflection coefficient of the variable capacitance diode 7 can be kept almost constant compared to the case where it is not connected. This state will be explained by comparing the impedance chart of the present embodiment shown in FIG. 5, ie, the case where the resistor 6 is connected, and the impedance chart of the conventional example shown in FIG. 4, ie, the case where the resistor 6 is not connected. Variable capacitance diode 7 has a reflection coefficient of 1 "A1" at the point A where the capacitance is minimum and a reflection coefficient 1 "B" of the point B where the capacitance is maximum.The change in 1 moves on the equireactance circle on the impedance chart in Figure 3, so the capacitance changes. The reflection coefficient, that is, the return loss, changes accordingly.In other words, when the capacitance of the reflection impedance looking into the variable capacitance diode is changed, the locus will be the reflection coefficient 1r'AI at the point A with the minimum capacitance and the point A with the maximum capacitance. The reflection coefficient IT''it of B is different. By adding the resistor RA here, the impedance A' can be moved to the point A where the capacitance is minimum as shown in FIG. 4, and the reflection coefficient can be kept at a substantially constant value when the phase is varied. Figures 5(a) and 5(a) compare calculation examples of return loss and reflection phase using the capacitance change Cv of the variable capacitance diode of a variable phase shifter that performs such an operation as a parameter and compare it with a conventional example.
As shown in the characteristic diagram b), and as an application example of such a variable phase shifter, as shown in FIG. The high frequency signals input from the variable capacitance diode 7A and the variable capacitor 7B are phase-shifted and combined into the same phase without any loss deviation, and can be output from the output terminal 2.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、可変容量ダイオードに並
列に抵抗値RAの抵抗を接続する事により位相可変時の
反射減衰量をほぼ一定に保つことができる効果がある。
As explained above, the present invention has the effect of keeping the return loss substantially constant when changing the phase by connecting a resistor having a resistance value RA in parallel to the variable capacitance diode.

このような可変位相器を3dBハイブリツドに2個組み
込むことにより、移相時における損失偏差の少ない可変
位相器を実現できる効果がある。
By incorporating two such variable phase shifters into a 3 dB hybrid, it is possible to realize a variable phase shifter with less loss deviation during phase shifting.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は本発明の一実施例の回路図、第3
図、第4図は本実施例を従来例と対比した説明図、第5
図(a)、(b)は本実施例および従来例の特性図、第
6図は従来の可変位相器の回路図である。 1・・・高周波入力端子、2・・・(高周波)出力端子
、3・・・直流印加端子、4,4A、4B、8.8A。 8B・・・コンデンサ、5.5A、5B・・・高インピ
ーダンス線路、6.6A、6B・・・抵抗、7,7A。 7B・・・可変容量ダイオード、9・・・ハイブリッド
回路。
1 and 2 are circuit diagrams of one embodiment of the present invention, and FIG.
Figure 4 is an explanatory diagram comparing this embodiment with the conventional example, and Figure 5 is an explanatory diagram comparing this embodiment with the conventional example.
Figures (a) and (b) are characteristic diagrams of this embodiment and a conventional example, and Fig. 6 is a circuit diagram of a conventional variable phase shifter. 1... High frequency input terminal, 2... (high frequency) output terminal, 3... DC application terminal, 4, 4A, 4B, 8.8A. 8B...Capacitor, 5.5A, 5B...High impedance line, 6.6A, 6B...Resistor, 7,7A. 7B... Variable capacitance diode, 9... Hybrid circuit.

Claims (2)

【特許請求の範囲】[Claims] 1.可変容量ダイオードと、この可変容量ダイオードの
容量を変化させるために直流電圧を印加する直流電圧端
子と、前記可変容量ダイオードに高周波電力を入力し前
記直流電圧の変化に応じて高周波反射電力を出力する高
周波入出力端子とを有する可変位相器において、前記可
変容量ダイオードと並列に接続される抵抗の抵抗値R_
Aが可変位相器本体の特性インピーダンスをZ_0とし
、前記可変容量ダイオードの等価直列抵抗をRとすると
、 R_A=Z_0{1+√(1+4(R/Z_0)^2)
/(2R/Z_0)}なる抵抗値であることを特徴とす
る可変位相器。
1. A variable capacitance diode, a DC voltage terminal to which a DC voltage is applied to change the capacitance of the variable capacitance diode, and a high frequency power input to the variable capacitance diode to output high frequency reflected power in accordance with changes in the DC voltage. In a variable phase shifter having a high frequency input/output terminal, the resistance value R_ of the resistor connected in parallel with the variable capacitance diode
When A has the characteristic impedance of the variable phase shifter main body as Z_0 and the equivalent series resistance of the variable capacitance diode as R, then R_A=Z_0{1+√(1+4(R/Z_0)^2)
A variable phase shifter having a resistance value of /(2R/Z_0)}.
2.第1および第2の可変容量ダイオードと、前記第1
および第2の可変容量ダイオードのそれぞれに並列に接
続される前記抵抗値R_Aを有する抵抗と、前記第1お
よび第2の可変容量ダイオードに直流電圧を供給する共
通の制御端子と、前記第1および第2の可変容量ダイオ
ードをそれぞれ設置する2つのアームならびに高周波電
力を入力するアームならびに前記第1および第2の可変
容量ダイオードからの高周波反射電力を同相で出力する
アームを有するハイブリッド回路とを有することを特徴
とする請求項1記載の可変位相器。
2. first and second variable capacitance diodes;
and a resistor having the resistance value R_A connected in parallel to each of the second variable capacitance diodes, a common control terminal that supplies DC voltage to the first and second variable capacitance diodes, and a common control terminal that supplies DC voltage to the first and second variable capacitance diodes. A hybrid circuit having two arms in which second variable capacitance diodes are respectively installed, an arm for inputting high frequency power, and an arm for outputting high frequency reflected power from the first and second variable capacitance diodes in phase. The variable phase shifter according to claim 1, characterized in that:
JP15681290A 1990-06-15 1990-06-15 Variable phase device Pending JPH0447801A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15681290A JPH0447801A (en) 1990-06-15 1990-06-15 Variable phase device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15681290A JPH0447801A (en) 1990-06-15 1990-06-15 Variable phase device

Publications (1)

Publication Number Publication Date
JPH0447801A true JPH0447801A (en) 1992-02-18

Family

ID=15635870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15681290A Pending JPH0447801A (en) 1990-06-15 1990-06-15 Variable phase device

Country Status (1)

Country Link
JP (1) JPH0447801A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6286504B1 (en) 1999-07-01 2001-09-11 Koh Suginobu Apparatus for capturing light energy
US6630874B2 (en) 2000-04-28 2003-10-07 Murata Manufacturing Co., Ltd. Phase shifter and communication device using the same
US7289001B2 (en) 2004-12-06 2007-10-30 Ngk Insulators, Ltd. Dielectric substrate for oscillator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6286504B1 (en) 1999-07-01 2001-09-11 Koh Suginobu Apparatus for capturing light energy
US6630874B2 (en) 2000-04-28 2003-10-07 Murata Manufacturing Co., Ltd. Phase shifter and communication device using the same
US7289001B2 (en) 2004-12-06 2007-10-30 Ngk Insulators, Ltd. Dielectric substrate for oscillator

Similar Documents

Publication Publication Date Title
JPH06101652B2 (en) Bias circuit
JPH0349458Y2 (en)
JPH0323688Y2 (en)
JPH0447801A (en) Variable phase device
US4978931A (en) Tunable phase shifter having wide instantaneous bandwidth
US2551802A (en) Phase modulator
JP3946665B2 (en) Large signal high frequency switch circuit
JP2007166239A (en) Phase shifter and control method thereof
US2506132A (en) Modulating system
JPH05175757A (en) High frequency power amplifier
JPH06188611A (en) Microwave signal distributing circuit
JPS63161701A (en) Microwave switch
JP3386868B2 (en) Radio frequency variable power splitter (Variable RF Power Splitter)
JPH06132702A (en) Phase shifter
JPS626504A (en) Voltage controlled oscillator
US2492185A (en) Oscillator
US3593203A (en) Variable impedance phase modulator
JP2574202Y2 (en) Voltage control type phase adjustment circuit
US3538462A (en) Linear active two-port network wherein nonlinear impedance characteristic at one port is reflected through predetermined angle at second port
JP2000101376A (en) Variable capacitance circuit
US2319535A (en) Modulation system
JPH0241009A (en) Hyb reflecting type phase device
JPS62243401A (en) Phase shifter
JPH06216602A (en) Phase shifter
JP2654446B2 (en) High insulation type switch device