JPH0447511A - Magneto-resistance effect type thin film magnetic head - Google Patents

Magneto-resistance effect type thin film magnetic head

Info

Publication number
JPH0447511A
JPH0447511A JP15954690A JP15954690A JPH0447511A JP H0447511 A JPH0447511 A JP H0447511A JP 15954690 A JP15954690 A JP 15954690A JP 15954690 A JP15954690 A JP 15954690A JP H0447511 A JPH0447511 A JP H0447511A
Authority
JP
Japan
Prior art keywords
amplifier
transformer
thin film
magneto
film magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15954690A
Other languages
Japanese (ja)
Inventor
Ryoji Namikata
量二 南方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15954690A priority Critical patent/JPH0447511A/en
Publication of JPH0447511A publication Critical patent/JPH0447511A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To attain the integration of a magneto-resistance effect element with an amplifier and to reduce the noise generated between the magneto-resistance effect element and the amplifier by providing a transformer which detects current change due to the resistance change of the magneto-resistance effect element. CONSTITUTION:In a head chip 4 on which the number of magneto-resistance effect elements (MR element) in accordance with a prescribed number of tracks are provided, surface packaging is applied to the transformers 2 same as the number of MR elements and an IC 6 for amplification provided as the amplifier. The head chip is adhered on a chip supporting board 5 with a flexible printed circuit board 7, and after they are connected electrically with other, the transformer 2 and the IC 6 for amplification, etc., re molded by using resin 8. In other words, such constitution is employed that the primary side coil of the transformer 2 is connected in series with the MR element 1, and the amplifier 3 is connected to the secondary coil side of the transformer 2. Thereby, it is possible to unify the MR element 1 with the amplifier, and to reduce the noise generated between the MR element 1 and the amplifier 3.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気抵抗効果素子を使用し、磁気記録媒体に
より発生される信号磁界を電気抵抗の変化として検出す
るようにした磁気抵抗効果型薄膜磁気ヘッドに関するも
のである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetoresistive type device that uses a magnetoresistive element to detect a signal magnetic field generated by a magnetic recording medium as a change in electrical resistance. This invention relates to thin film magnetic heads.

〔従来の技術〕[Conventional technology]

従来、磁気抵抗効果型薄膜磁気ヘッドにおいて、磁気記
録媒体により発生される信号磁界は磁気抵抗効果素子(
MR素子)の抵抗変化として、検出されている。この抵
抗変化は、第4図に示すように、定電流電源12から定
電流■。をMR素子11に供給し、抵抗変化を電圧変化
に変換させることにより検出される。このとき、端子電
圧には信号電圧に比して著しく大きな直流電圧成分も含
まれているため、通常、コンデンサ13で直流成分をカ
ットした後、増幅器14により増幅し出力する。
Conventionally, in magnetoresistive thin-film magnetic heads, the signal magnetic field generated by the magnetic recording medium is transmitted through a magnetoresistive element (
It is detected as a resistance change of the MR element). As shown in FIG. 4, this resistance change is caused by a constant current (■) from the constant current power supply 12. is supplied to the MR element 11 and detected by converting the resistance change into a voltage change. At this time, since the terminal voltage also includes a DC voltage component that is significantly larger than the signal voltage, the DC component is usually cut by the capacitor 13, and then amplified by the amplifier 14 and output.

磁気抵抗効果型薄膜磁気ヘッドは磁束応答型のヘッドで
あることから、特に低周波領域において、巻線型の薄膜
磁気ヘッドより有利なものとみなされている。また、磁
気抵抗効果型薄膜磁気ヘッドは巻線型薄膜磁気ヘッドに
比して、トラック当たりの寸法を小さくすることができ
ることから、多トラツク化に適している。
Since magnetoresistive thin film magnetic heads are magnetic flux responsive heads, they are considered more advantageous than wire-wound thin film magnetic heads, especially in the low frequency range. Furthermore, since the magnetoresistive thin film magnetic head can have a smaller size per track than the wire-wound thin film magnetic head, it is suitable for multi-track applications.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが、多トラツク型の磁気抵抗効果型薄膜磁気ヘッ
ドを構成する場合には、比較的低周波領域の信号電圧を
含むため、直流成分カット用のコンデンサ13が比較的
大きくなる。しかもトラ・ツク数に応した個数のコンデ
ンサ13が必要なため、通常コンデンサ13と増幅器1
4は磁気ヘッドのMR素子を含むチップ部分とは別個に
構成され、両者間をフレキシブルプリント配線板(FP
C)等で接続することになる。しかしながらこのような
構成では、FPC上を非常に微弱な信号電圧が伝達する
ため外乱に対して弱く、飛び込みノイズの影響が著しく
大きくなり、S/N比が減少するという問題点を有して
いる。
However, when constructing a multi-track magnetoresistive thin film magnetic head, the capacitor 13 for cutting the DC component becomes relatively large because the signal voltage includes a signal voltage in a relatively low frequency range. Moreover, since the number of capacitors 13 is required according to the number of trucks, usually the capacitor 13 and the amplifier 1 are
4 is constructed separately from the chip portion containing the MR element of the magnetic head, and a flexible printed wiring board (FP) is connected between the two.
C) etc. However, in this configuration, a very weak signal voltage is transmitted on the FPC, making it vulnerable to external disturbances, and the influence of incoming noise increases significantly, resulting in a decrease in the S/N ratio. .

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る磁気抵抗効果型薄膜磁気ヘッドは、上記の
課題を解決するために、磁気記録媒体から発生する信号
磁界を抵抗変化として出力する磁気抵抗効果素子と、該
磁気抵抗効果素子から出力される抵抗変化に伴う電流変
化を検出するトランスとを含むことを特徴としている。
In order to solve the above problems, a magnetoresistive thin film magnetic head according to the present invention includes a magnetoresistive element that outputs a signal magnetic field generated from a magnetic recording medium as a resistance change, and a magnetoresistive element that outputs a signal magnetic field generated from a magnetic recording medium as a resistance change. The device is characterized in that it includes a transformer that detects a change in current due to a change in resistance.

〔作 用〕[For production]

上記の構成によれば、磁気記録媒体から発生する信号磁
界は、磁気抵抗効果型薄膜磁気へ、ンドにおいて、磁気
抵抗効果素子により抵抗変化として出力される。そして
、この抵抗変化は、磁気抵抗効果素子に接続されたトラ
ンスにより電流変化に変換され、検出される。
According to the above configuration, the signal magnetic field generated from the magnetic recording medium is output as a resistance change by the magnetoresistive element in the magnetoresistive thin film magnet. Then, this resistance change is converted into a current change by a transformer connected to the magnetoresistive element and detected.

このとき、トランスは従来使用されていたコンデンサに
比べてその容積を小さくすることができるため、特に多
トラツク型の磁気抵抗効果型薄膜磁気ヘッドの場合は、
磁気抵抗効果素子と増幅器との一体化が可能となる。従
って、磁気抵抗効果素子と増幅器との間に生じるノイズ
が減少する。
At this time, since the volume of the transformer can be made smaller than that of conventionally used capacitors, especially in the case of multi-track magnetoresistive thin film magnetic heads,
It becomes possible to integrate the magnetoresistive element and the amplifier. Therefore, noise generated between the magnetoresistive element and the amplifier is reduced.

また、磁気抵抗効果素子を含むヘッドチップを形成する
際に、磁気抵抗効果素子とともにトランスをヘッドチッ
プに組み込んで形成することができる。その結果、さら
にノイズを減少させることができる。
Further, when forming a head chip including a magnetoresistive element, a transformer can be incorporated into the head chip together with the magnetoresistive element. As a result, noise can be further reduced.

〔実施例1〕 本発明の一実施例を第1図及び第2図を用いて説明する
と以下の通りである。
[Example 1] An example of the present invention will be described below using FIGS. 1 and 2.

本実施例に係る磁気抵抗効果型薄膜磁気ヘッドは、第1
図(a)に示すように、磁気抵抗効果素子(以下、MR
素子と称する)1と直列にトランス2の一次側巻線が接
続され、このトランス2の二次巻線側に増幅器3が接続
された構成である。
The magnetoresistive thin film magnetic head according to this embodiment has a first
As shown in Figure (a), a magnetoresistive effect element (hereinafter referred to as MR
The primary winding of a transformer 2 is connected in series with an element (referred to as an element) 1, and an amplifier 3 is connected to a secondary winding of the transformer 2.

上記の構成において、磁気記録媒体からの信号磁界を検
出する際には、MR素子1及びトランス2の一次巻線側
の両端に定電圧を印加する。そして、MR素子1に抵抗
変化が生じるとトランス2の一次巻線に流れる電流が変
化し、この電流変化により二次側巻線端子に電圧変化が
生じる。更に、この電圧変化を増幅器3により増幅する
ことでMR素子1の抵抗変化、即ち図示しない磁気記録
媒体からの信号磁界に対応する信号電圧が得られる。
In the above configuration, when detecting a signal magnetic field from a magnetic recording medium, a constant voltage is applied to both ends of the MR element 1 and the transformer 2 on the primary winding side. When a resistance change occurs in the MR element 1, the current flowing through the primary winding of the transformer 2 changes, and this current change causes a voltage change at the secondary winding terminal. Further, by amplifying this voltage change by the amplifier 3, a signal voltage corresponding to the resistance change of the MR element 1, that is, a signal magnetic field from a magnetic recording medium (not shown) is obtained.

尚、上記の磁気抵抗効果型薄膜磁気ヘッドは、MR素子
1とトランス2との配置を換えて、第1図(b)に示す
ような構成にすることもできる。
The magnetoresistive thin film magnetic head described above can also be configured as shown in FIG. 1(b) by changing the arrangement of the MR element 1 and the transformer 2.

ここで、多トラツク型の磁気抵抗効果型薄膜磁気ヘッド
の製造方法を、第2図を用いて以下に説明する。
Here, a method for manufacturing a multi-track magnetoresistive thin film magnetic head will be described below with reference to FIG.

先ず、図示しない複数のMR素子が設けられたウェハー
から、第2図(a)に示す、所定のトラック数に対応す
る数のMR素子が設けられたヘッドチップ4が加工され
る。
First, a head chip 4 on which a number of MR elements corresponding to a predetermined number of tracks is provided is processed from a wafer (not shown) on which a plurality of MR elements are provided, as shown in FIG. 2(a).

一方、第2図(b)に示すように、チップ支持台5上に
は上記MR素子と同じ個数のトランス2・・・と増幅器
となる増幅用1’ C6が表面実装されている。
On the other hand, as shown in FIG. 2(b), the same number of transformers 2 as the MR elements and an amplifier 1'C6 are surface-mounted on the chip support 5.

そして、第2図(C)に示すように、上記のチップ支持
台5にヘッドチップ4とFPC7とを接着し、各々をワ
イヤーボンディング等で電気的に接続した後、第2図(
d)に示すように、樹脂8を用いて上記トランス2・・
・及び増幅用IC6等をモールドすることによって、磁
気抵抗効果型薄膜磁気ヘッドを得る。尚、トランス2・
・・は1個ずつ支持台上に実装する例を示したが、それ
以外にトラック数に対応する個数のトランス2・・・が
一体化されたものを使用することもできる。
Then, as shown in FIG. 2(C), the head chip 4 and the FPC 7 are bonded to the chip support 5, and each is electrically connected by wire bonding or the like.
As shown in d), the above transformer 2...
- By molding the amplification IC 6 and the like, a magnetoresistive thin film magnetic head is obtained. Furthermore, transformer 2.
Although an example has been shown in which transformers 2 are mounted one by one on a support stand, it is also possible to use a structure in which a number of transformers 2 corresponding to the number of tracks are integrated.

〔実施例2〕 本発明の他の実施例を、第1図及び第3図を用いて説明
すると以下の通りである。尚、説明の便室上、前記実施
例の図面に示した部材と同一の機能を有する部材には同
一の符号を付記し、その説明を省略する。
[Embodiment 2] Another embodiment of the present invention will be described below with reference to FIGS. 1 and 3. For ease of explanation, members having the same functions as those shown in the drawings of the above embodiment are denoted by the same reference numerals, and their explanations will be omitted.

本実施例の磁気抵抗効果型薄膜磁気ヘッドは基本的に、
第1図に示す前記の実施例と同様の構成である。この磁
気ヘッドの製造方法を第3図を用いて以下に説明する。
The magnetoresistive thin film magnetic head of this embodiment basically has the following features:
The configuration is similar to that of the previous embodiment shown in FIG. A method of manufacturing this magnetic head will be explained below with reference to FIG.

先ず、複数のMR素子及びこのMR素子の数に対応する
個数のトランス2・・・が一体的に形成されたウェハー
から、第3図(a)に示す、所定のトラック数に対応す
る個数のMR素子及びトランス2・・・が設けられたヘ
ッドチップ9が加工される。
First, from a wafer on which a plurality of MR elements and a number of transformers 2 corresponding to the number of MR elements are integrally formed, a number of transformers corresponding to a predetermined number of tracks as shown in FIG. A head chip 9 provided with an MR element and transformers 2 . . . is processed.

一方、第3図(b)に示すように、チップ支持台10上
には増幅用IC6が表面実装されている。
On the other hand, as shown in FIG. 3(b), an amplification IC 6 is surface-mounted on the chip support 10.

そして、第3図(C)に示すように、上記のチップ支持
台10にヘッドチップ9とFPC7とを接着し、各々を
ワイヤーボンディング等で電気的に接続した後、第3図
(d)に示すように、樹脂8を用いて上記トランス2及
び増幅用IC等をモールドすることによって、磁気抵抗
効果型薄膜磁気ヘッドを得る。
Then, as shown in FIG. 3(C), the head chip 9 and the FPC 7 are bonded to the above-mentioned chip support 10, and each is electrically connected by wire bonding or the like. As shown, a magnetoresistive thin film magnetic head is obtained by molding the transformer 2, amplification IC, etc. using resin 8.

尚、上記実施例1及び実施例2において、トランス2の
1次側巻線数よりも2次側巻線数を多(することにより
電圧増幅の機能を持たせることも可能となる。さらに、
チップ支持台5・10上にはそれぞれ増幅用IC6まで
しか実装されていないが、並列処理を時系列処理に変換
するためのマルチプレクサ一部までチップ支持台5・1
0上に実装することも可能である。この場合、チップ支
持台5・10に接続される各々のFPC7・7の線数を
著しく少なくできるという利点がある。
In addition, in the above embodiments 1 and 2, the number of secondary windings of the transformer 2 is greater than the number of primary windings (by doing so, it is also possible to provide a voltage amplification function.Furthermore,
Although only up to the amplification IC 6 is mounted on the chip support stands 5 and 10, up to a part of the multiplexer for converting parallel processing to time series processing is mounted on the chip support stands 5 and 1.
It is also possible to implement it on top of 0. In this case, there is an advantage that the number of wires in each of the FPCs 7, 7 connected to the chip support stands 5, 10 can be significantly reduced.

〔発明の効果] 本発明に係る磁気抵抗効果型薄膜磁気ヘッドは、以上の
ように、磁気記録媒体から発生する信号磁界を抵抗変化
として出力する磁気抵抗効果素子と、該磁気抵抗効果素
子から出力される抵抗変化に伴う電流変化を検出するト
ランスとを含む構成である。
[Effects of the Invention] As described above, the magnetoresistive thin film magnetic head according to the present invention includes a magnetoresistive element that outputs a signal magnetic field generated from a magnetic recording medium as a resistance change, and a magnetoresistive element that outputs a signal magnetic field generated from a magnetic recording medium as a resistance change. This configuration includes a transformer that detects a change in current due to a change in resistance.

このとき、トランスは従来使用されていたコンデンサに
比べてその容積を小さくすることができるため、特に多
トラツク型の磁気抵抗効果型薄膜磁気ヘッドの場合は、
磁気抵抗効果素子と増幅器との一体化が可能となる。従
って、磁気抵抗効果素子と増幅器との間に生じるノイズ
が著しく減少するという効果を奏する。
At this time, since the volume of the transformer can be made smaller than that of conventionally used capacitors, especially in the case of multi-track magnetoresistive thin film magnetic heads,
It becomes possible to integrate the magnetoresistive element and the amplifier. Therefore, there is an effect that the noise generated between the magnetoresistive element and the amplifier is significantly reduced.

また、磁気抵抗効果素子を含むヘッドチップを形成する
際に、磁気抵抗効果素子とともにトランスをヘッドチッ
プに組み込んで形成することができる。その結果、さら
にノイズを減少させることができ、磁気抵抗効果型薄膜
磁気ヘッドのS/N比を向上させ、高品質の磁気抵抗効
果型薄膜磁気ヘッドを得ることができるという効果も奏
する。
Further, when forming a head chip including a magnetoresistive element, a transformer can be incorporated into the head chip together with the magnetoresistive element. As a result, it is possible to further reduce noise, improve the S/N ratio of the magnetoresistive thin film magnetic head, and obtain a high quality magnetoresistive thin film magnetic head.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本発明の一実施例を示すものである
。 第1図(a)(b)は、磁気抵抗効果型薄膜磁気ヘッド
の構成を示す回路図である。 第2図(a)〜(d)は、磁気抵抗効果型薄膜磁気ヘッ
ドの製造工程を示す斜視図である。 第3図(a)〜(d)は、本発明の他の実施例を示すも
のであって、磁気抵抗効果型薄膜磁気ヘッドの製造工程
を示す斜視図である。 第゛4図は、従来例を示すものであって、磁気抵抗効果
型薄膜磁気ヘッドの構成を示す回路図である。 1は磁気抵抗効果素子、2はトランスである。 特許出願人     シャープ 株式会社第 図(a) 第 図(b) 第 1!!(C) 第 図(d) 第 図(a) 第 図(b) ]○ 第 f!!(C) 第 図(d) 第 図 c
1 and 2 show one embodiment of the present invention. FIGS. 1A and 1B are circuit diagrams showing the structure of a magnetoresistive thin film magnetic head. FIGS. 2(a) to 2(d) are perspective views showing the manufacturing process of a magnetoresistive thin film magnetic head. FIGS. 3(a) to 3(d) show another embodiment of the present invention, and are perspective views showing the manufacturing process of a magnetoresistive thin film magnetic head. FIG. 4 shows a conventional example, and is a circuit diagram showing the structure of a magnetoresistive thin film magnetic head. 1 is a magnetoresistive element, and 2 is a transformer. Patent applicant Sharp Corporation Figure (a) Figure (b) 1st! ! (C) Figure (d) Figure (a) Figure (b) ]○ Part f! ! (C) Figure (d) Figure c

Claims (1)

【特許請求の範囲】[Claims] 1、磁気記録媒体から発生する信号磁界を抵抗変化とし
て出力する磁気抵抗効果素子と、該磁気抵抗効果素子か
ら出力される抵抗変化に伴う電流変化を検出するトラン
スとを含む磁気抵抗効果型薄膜磁気ヘッド。
1. A magnetoresistive thin film magnet that includes a magnetoresistive element that outputs a signal magnetic field generated from a magnetic recording medium as a resistance change, and a transformer that detects a current change accompanying the resistance change output from the magnetoresistive element. head.
JP15954690A 1990-06-15 1990-06-15 Magneto-resistance effect type thin film magnetic head Pending JPH0447511A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15954690A JPH0447511A (en) 1990-06-15 1990-06-15 Magneto-resistance effect type thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15954690A JPH0447511A (en) 1990-06-15 1990-06-15 Magneto-resistance effect type thin film magnetic head

Publications (1)

Publication Number Publication Date
JPH0447511A true JPH0447511A (en) 1992-02-17

Family

ID=15696115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15954690A Pending JPH0447511A (en) 1990-06-15 1990-06-15 Magneto-resistance effect type thin film magnetic head

Country Status (1)

Country Link
JP (1) JPH0447511A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789352A1 (en) * 1996-01-11 1997-08-13 Quantum Corporation Flex circuit head module within a tape drive
US6400529B1 (en) 1999-07-02 2002-06-04 Fujitsu Limited Integrated circuit chip supporting and electrically connecting a head slider
US6714383B2 (en) * 1999-12-24 2004-03-30 Hitachi, Ltd. Magnetic disk apparatus
US6885522B1 (en) * 1999-05-28 2005-04-26 Fujitsu Limited Head assembly having integrated circuit chip covered by layer which prevents foreign particle generation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789352A1 (en) * 1996-01-11 1997-08-13 Quantum Corporation Flex circuit head module within a tape drive
US6885522B1 (en) * 1999-05-28 2005-04-26 Fujitsu Limited Head assembly having integrated circuit chip covered by layer which prevents foreign particle generation
US7347347B2 (en) 1999-05-28 2008-03-25 Fujitsu Limited Head assembly, disk unit, and bonding method and apparatus
US6400529B1 (en) 1999-07-02 2002-06-04 Fujitsu Limited Integrated circuit chip supporting and electrically connecting a head slider
US6714383B2 (en) * 1999-12-24 2004-03-30 Hitachi, Ltd. Magnetic disk apparatus

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