JPH0445201Y2 - - Google Patents
Info
- Publication number
- JPH0445201Y2 JPH0445201Y2 JP7023286U JP7023286U JPH0445201Y2 JP H0445201 Y2 JPH0445201 Y2 JP H0445201Y2 JP 7023286 U JP7023286 U JP 7023286U JP 7023286 U JP7023286 U JP 7023286U JP H0445201 Y2 JPH0445201 Y2 JP H0445201Y2
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- insulating case
- coefficient thermistor
- thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000694 effects Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
本考案はカラーテレビジヨン受像機もカラーデ
イスプレイなどのCRTシヤドウマスクの消磁を
行う自動消磁回路に無接点スイツチとして用いら
れる正特性サーミスタ装置に関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a positive temperature coefficient thermistor device used as a non-contact switch in an automatic degaussing circuit for degaussing a CRT shadow mask in color television receivers and color displays.
従来の技術
従来、この種の正特性サーミスタ装置は第２図
に示すような構成であつた。第２図において、１
は正特性サーミスタ、２は端子で正特性サーミス
タ１の対向電極から導出してあり、３は絶縁ケー
スでこれらを封止している。Prior Art Conventionally, this type of positive temperature coefficient thermistor device has had a configuration as shown in FIG. In Figure 2, 1
2 is a positive temperature coefficient thermistor, 2 is a terminal led out from the opposite electrode of the positive coefficient thermistor 1, and 3 is an insulating case that seals these.
周知のように、正特性サーミスタに電圧を印加
すると、スイツチをONした時の突入電流は大き
いが、時間とともに正特性サーミスタが自己発熱
して自らの抵抗値を急峻に増大させ、回路を流れ
る電流値を著しく小さくするという無接点スイツ
チとして動作する。そして、正特性サーミスタが
スイツチングした後に回路に流れる電流はＯにな
るのが理想的であるが、機械的なOFFではない
ため回路には微小電流が残つている。この微小電
流はＯに近い方が望ましい。 As is well known, when a voltage is applied to a positive temperature coefficient thermistor, the inrush current is large when the switch is turned on, but over time the positive temperature coefficient thermistor self-heats and rapidly increases its resistance value, causing the current flowing through the circuit to increase. It operates as a non-contact switch that significantly reduces the value. Ideally, the current flowing through the circuit after the positive temperature coefficient thermistor switches is 0, but since it is not mechanically turned off, a small current remains in the circuit. It is desirable that this minute current be close to O.
考案が解決しようとする問題点
第２図のような従来の構成では、正特性サーミ
スタの自己発熱量が絶縁ケースから外部に放熱し
易いため、正特性サーミスタがスイツチングした
後の抵抗値が幾分低い値で安定するため、回路に
残留する電流が大きいという問題があつた。Problems to be Solved by the Invention In the conventional configuration shown in Figure 2, the self-generated heat of the PTC thermistor is easily radiated to the outside from the insulating case, so the resistance value after the PTC thermistor switches is somewhat low. Since it stabilizes at a low value, there was a problem that a large amount of current remained in the circuit.
本考案はこのような問題点を解決するもので、
極めてスイツチング特性に優れた正特性サーミス
タ装置を提供することを目的とするものである。 This invention solves these problems,
The object of the present invention is to provide a positive temperature coefficient thermistor device with extremely excellent switching characteristics.
問題点を解決するための手段
この問題点を解決するために本考案は、絶縁ケ
ースの内壁に熱反射膜をメツキ、コーテイング、
貼付等の手段で適当な膜厚で形成したものであ
る。Means for solving the problem In order to solve this problem, the present invention involves plating or coating the inner wall of the insulating case with a heat reflective film.
It is formed with an appropriate film thickness by means such as pasting.
作 用
この構成により、正特性サーミスタの自己発熱
量が熱反射膜で反射して絶縁ケース内に保温さ
れ、絶縁ケースから放熱し難くなり、正特性サー
ミスタの放熱が抑制されるとともに、正特性サー
ミスタの周囲温度が上昇するため自らの抵抗値が
より高くなり、回路に残留する電流値をより小さ
くできることとなる。Effect With this configuration, the self-heating amount of the PTC thermistor is reflected by the heat reflection film and kept warm inside the insulating case, making it difficult to radiate heat from the insulating case, suppressing the heat dissipation of the PTC thermistor, and As the ambient temperature of the circuit increases, its own resistance value becomes higher, and the current value remaining in the circuit can be further reduced.
実施例
第１図は本考案の一実施例による正特性サーミ
スタ装置を示す断面図であり、第１図において、
４は正特性サーミスタ、５は正特性サーミスタ４
の対向電極から導出した端子、６は絶縁ケース、
７は絶縁ケース６の内壁に形成した熱反射膜であ
る。この熱反射膜７は、絶縁ケース６の内壁に例
えばニツケル無電解メツキを施して鏡面仕上げ
し、エポキシ等の透明な絶縁膜をコーテイングし
て硬化安定化し形成する。この時、熱反射膜７の
表面は正特性サーミスタ４が接触してもシヨート
しないよう絶縁処理しておくか、正特性サーミス
タ４が絶縁ケース６に接触しないように位置決め
しておくのが望ましい。Embodiment FIG. 1 is a sectional view showing a positive temperature coefficient thermistor device according to an embodiment of the present invention.
4 is a positive characteristic thermistor, 5 is a positive characteristic thermistor 4
Terminal led out from the opposite electrode, 6 is an insulating case,
7 is a heat reflective film formed on the inner wall of the insulating case 6. The heat reflecting film 7 is formed by applying nickel electroless plating to the inner wall of the insulating case 6 to give it a mirror finish, and coating it with a transparent insulating film such as epoxy to stabilize the hardening. At this time, it is desirable that the surface of the heat reflecting film 7 be insulated so that it will not be shot even if the PTC thermistor 4 comes into contact with it, or that the PTC thermistor 4 should be positioned so that it does not come into contact with the insulating case 6.
考案の効果
以上のように本考案によれば、絶縁ケースの内
壁に設けた熱反射膜が正特性サーミスタの放熱を
抑えるため、絶縁ケース内が保温され、スイツチ
ング後の正特性サーミスタの抵抗値が高くなり、
回路に残留する電流を著しく小さくでき、極めて
スイツチング特性に優れた正特性サーミスタ装置
を提供できるという効果が得られる。Effects of the invention As described above, according to the invention, the heat reflective film provided on the inner wall of the insulating case suppresses the heat radiation of the PTC thermistor, so the inside of the insulating case is kept warm, and the resistance value of the PTC thermistor after switching is reduced. get high,
The effect is that the current remaining in the circuit can be significantly reduced and a positive temperature coefficient thermistor device with extremely excellent switching characteristics can be provided.
第１図は本考案の一実施例による正特性サーミ
スタ装置を示す断面図、第２図は従来の正特性サ
ーミスタ装置を示す断面図である。
４……正特性サーミスタ、５……端子、６……
絶縁ケース、７……熱反射膜。
FIG. 1 is a sectional view showing a positive temperature coefficient thermistor device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional positive temperature coefficient thermistor device. 4...Positive characteristic thermistor, 5...Terminal, 6...
Insulating case, 7... heat reflective film.
Claims (1)
に熱反射膜を形成してなる絶縁ケースの中に封止
してなる正特性サーミスタ装置。 A positive temperature coefficient thermistor device in which a positive temperature coefficient thermistor with a lead-out terminal is sealed in an insulating case with a heat reflective film formed on the inner wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7023286U JPH0445201Y2 (en) | 1986-05-09 | 1986-05-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7023286U JPH0445201Y2 (en) | 1986-05-09 | 1986-05-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62182503U JPS62182503U (en) | 1987-11-19 |
| JPH0445201Y2 true JPH0445201Y2 (en) | 1992-10-23 |
Family
ID=30911681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7023286U Expired JPH0445201Y2 (en) | 1986-05-09 | 1986-05-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0445201Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5853312B2 (en) * | 2012-01-10 | 2016-02-09 | Koa株式会社 | Resistor |
-
1986
- 1986-05-09 JP JP7023286U patent/JPH0445201Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62182503U (en) | 1987-11-19 |
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