JPH0442804B2 - - Google Patents
Info
- Publication number
- JPH0442804B2 JPH0442804B2 JP3686485A JP3686485A JPH0442804B2 JP H0442804 B2 JPH0442804 B2 JP H0442804B2 JP 3686485 A JP3686485 A JP 3686485A JP 3686485 A JP3686485 A JP 3686485A JP H0442804 B2 JPH0442804 B2 JP H0442804B2
- Authority
- JP
- Japan
- Prior art keywords
- coil body
- conductive layer
- coil
- thin film
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000013067 intermediate product Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/042—Printed circuit coils by thin film techniques
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Coils Or Transformers For Communication (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明はコイル体に関するものである。[Detailed description of the invention] [Industrial application field] This invention relates to a coil body.
従来のコイル体としては、第５図、第６図に示
すように、絶縁性の基板１の表面に導電層２を渦
巻状に形成してなるものが知られている。このコ
イル体は、第７図に示すように所定の厚みを有す
る基板１の表面に蒸着等によつて金属等の導電材
料の薄膜２′を形成し、この薄膜２′の表面にフオ
トレジスト膜３を形成して薄膜２′を選択的にエ
ツチングさせるいわゆるフオトエツチング法によ
つて製造するの通常である。
As a conventional coil body, one in which a conductive layer 2 is spirally formed on the surface of an insulating substrate 1 is known, as shown in FIGS. 5 and 6. As shown in FIG. 7, this coil body is constructed by forming a thin film 2' of a conductive material such as a metal by vapor deposition on the surface of a substrate 1 having a predetermined thickness, and then applying a photoresist film to the surface of this thin film 2'. It is customary to manufacture the film by a so-called photo-etching method in which a thin film 2' is selectively etched after forming a thin film 2'.
ところで、上記のコイル体と構造は、コイル体
を全体に所定の機械的強度を得るために、基板１
を有することが必要条件であり、基板１を相当厚
手のものとしなければならないのが実情である。
すなわち、基板１を除去したり、基板１を薄く構
成した場合には、コイル体全体の機械的強度が著
しく低下し、実用に供し得ないものとなつてしま
う。
By the way, in the above coil body and structure, in order to obtain a predetermined mechanical strength of the coil body as a whole, the substrate 1 is
The actual situation is that the substrate 1 must be considerably thick.
That is, if the substrate 1 is removed or the substrate 1 is made thinner, the mechanical strength of the entire coil body will be significantly reduced, making it impossible to put it into practical use.
したがつて、上記のコイル体では、基板１の占
めるスペースが極めて大きく、コイル体全体を小
形、軽量化できないという欠点があつた。 Therefore, the above-mentioned coil body has the drawback that the space occupied by the substrate 1 is extremely large, and the entire coil body cannot be made smaller and lighter.
そこで、この発明では、充分な機械的強度を有
し、かつ小形、軽量化が可能であるコイル体を如
何に実現するかを問題としている。 Therefore, the present invention deals with the problem of how to realize a coil body that has sufficient mechanical strength and can be made smaller and lighter.
この発明は、非磁性の薄状金属シートに絶縁層
を形成した基板上に、導電体からなるコイルを形
成することにより上記の問題を解決している。
This invention solves the above problem by forming a coil made of a conductor on a substrate made of a non-magnetic thin metal sheet with an insulating layer formed thereon.
第１図は、この発明の第１の実施例を示す図で
ある。
FIG. 1 is a diagram showing a first embodiment of the invention.
この図に示すコイル体は、非磁性の導電層（薄
状金属シート）６の上面に絶縁層７を形成した基
板６１上に、導電体からなる渦巻状の導電層（コ
イル）８１を形成し、導電層８１の上面おび側面
に絶縁層９を形成してなるものである。絶縁層７
には貫通孔７１が形成されており、導電層８１は
貫通孔７１を通して導電層６と電気的に接続され
ている。 The coil body shown in this figure has a spiral conductive layer (coil) 81 made of a conductor formed on a substrate 61 on which an insulating layer 7 is formed on the upper surface of a non-magnetic conductive layer (thin metal sheet) 6. , an insulating layer 9 is formed on the top and side surfaces of a conductive layer 81. Insulating layer 7
A through hole 71 is formed in the through hole 71 , and the conductive layer 81 is electrically connected to the conductive layer 6 through the through hole 71 .
また、第２図は、この発明の第２図の実施例を
示す図である。 Further, FIG. 2 is a diagram showing the embodiment of FIG. 2 of the present invention.
この図に示すコイル体は、第１図に示すコイル
体に別の要素を付加してその表面を平坦面とした
ものである。すなわち、第２図に示すコイル体
は、第１図に示すコイル体の絶縁層９で覆われた
導電層８１内に形成された渦巻状の凹部内に導電
体または絶縁体からなる薄膜１１Ｂと絶縁膜１４
とを形成してその表面を平坦面としたものであ
る。基板６１上に形成された導電層８１、絶縁層
９、薄膜１１Ｂ、絶縁膜１４からなるコイル部I1
の上面は平坦面である。 The coil body shown in this figure is obtained by adding another element to the coil body shown in FIG. 1 to make its surface flat. That is, the coil body shown in FIG. 2 has a thin film 11B made of a conductor or an insulator in a spiral recess formed in the conductive layer 81 covered with the insulating layer 9 of the coil body shown in FIG. Insulating film 14
and its surface is flat. A coil portion I 1 consisting of a conductive layer 81, an insulating layer 9, a thin film 11B, and an insulating film 14 formed on a substrate 61
The upper surface of is a flat surface.
また、第３図は、この発明の第３の実施例を示
す図である。 Further, FIG. 3 is a diagram showing a third embodiment of the present invention.
この図に示すコイル体は、第２図に示すコイル
体の上面に、上記コイル部I1と略同一構成のコイ
ル部I2，I3を順次積層し、更にコイル部I3の上面
に導電層１５を形成してなるものである。この場
合、各コイル部I1〜I3の絶縁層９，９，９にはそ
れぞれ貫通孔９１が形成されており、各コイル部
I1〜I3の導電層８１，８１，８１は各貫通孔９１
を通して電気的に直列に接続され、コイル部I3の
導電層８１は貫通孔９１を通して導電層１５と電
気的に接続されている。 The coil body shown in this figure has coil parts I 2 and I 3 having substantially the same configuration as the above-mentioned coil part I 1 successively laminated on the upper surface of the coil body shown in FIG. A layer 15 is formed. In this case, through holes 91 are formed in the insulating layers 9, 9, 9 of each coil part I1 to I3 , and each coil part
The conductive layers 81, 81, 81 of I 1 to I 3 are connected to each through hole 91
The conductive layer 81 of the coil portion I 3 is electrically connected to the conductive layer 15 through the through hole 91 .
次に、上記の各実施例で述べたコイル体の製造
方法について説明する。 Next, a method for manufacturing the coil body described in each of the above embodiments will be explained.
第１の実施例のコイル体を製造するには、ま
ず、第４図Ａに示すように仮基台４の表面に絶縁
層５、導電層６、絶縁層７を順次形成する。仮基
台４としては任意のものを使用できるが、仮基台
４としてシリコンを使用する場合には、この仮基
台表面を熱酸化させることによりSiO2の絶縁層
５を形成することができる。なお前記導電層６は
最終的にはコイル体の指示基板を形成するもので
あると共に、コイル体の一方の端子となるもので
あり、非磁性の薄状金属、例えば銅、アルミニウ
ム等の金属が使用される。また絶縁層７としては
例えばSiO2，Si3N4等の絶縁体膜等が使用され
る。 To manufacture the coil body of the first embodiment, first, as shown in FIG. 4A, an insulating layer 5, a conductive layer 6, and an insulating layer 7 are sequentially formed on the surface of a temporary base 4. Any material can be used as the temporary base 4, but when silicon is used as the temporary base 4, an insulating layer 5 of SiO 2 can be formed by thermally oxidizing the surface of this temporary base. . The conductive layer 6 will ultimately form an indicator board for the coil body and also serve as one terminal of the coil body, and is made of a non-magnetic thin metal such as copper or aluminum. used. Further, as the insulating layer 7, for example, an insulating film such as SiO 2 or Si 3 N 4 is used.
次いで第４図Ｂに示すように、前記絶縁層７の
一部をエツチング等の手段により除去して貫通孔
７１を形成した後、銅、アルミニウム等の銅電層
８を蒸着、スパツタリング等の方法によつて形成
する。この後、第４図Ｃに示すように前記導電層
８を写真彫刻法等の手段により選択的にエツチン
グして、第５図に示したものと同様な渦巻状の導
電層８１成形する。この状態で渦巻状の導電層８
１の一端は前記絶縁層７の貫通孔７１を介して金
属層６と電気的に接続されている。 Next, as shown in FIG. 4B, a part of the insulating layer 7 is removed by means such as etching to form a through hole 71, and then a copper conductive layer 8 of copper, aluminum, etc. is deposited by a method such as vapor deposition or sputtering. formed by Thereafter, as shown in FIG. 4C, the conductive layer 8 is selectively etched by means such as photo engraving to form a spiral conductive layer 81 similar to that shown in FIG. In this state, the spiral conductive layer 8
One end of the metal layer 1 is electrically connected to the metal layer 6 through the through hole 71 of the insulating layer 7 .
次いで第４図Ｄに示すように導電層８１の表
面、すなわち上面および側面に絶縁層９を形成す
る。 Next, as shown in FIG. 4D, an insulating layer 9 is formed on the surface of the conductive layer 81, that is, on the top surface and side surfaces.
この絶縁層９は、導電層８１の金属表面を熱酸
化等によつて酸化させることによつて形成しても
よい。例えば導電層９がアルミニウムである場
合、これを熱酸化させることにより酸化アルミニ
ウムAl2O3の絶縁層９を形成することができる。 This insulating layer 9 may be formed by oxidizing the metal surface of the conductive layer 81 by thermal oxidation or the like. For example, when the conductive layer 9 is made of aluminum, the insulating layer 9 of aluminum oxide Al 2 O 3 can be formed by thermally oxidizing it.
このようにして絶縁層９で被覆された渦巻状の
導電層８１を有する中間製品１０が得られる。 In this way, an intermediate product 10 having a spiral conductive layer 81 covered with an insulating layer 9 is obtained.
そして、最後に仮基台４および絶縁層５研摩ま
たはエツチング等の方法によつて除去することに
より第１図のコイル体を得ることができる。 Finally, the temporary base 4 and the insulating layer 5 are removed by a method such as polishing or etching to obtain the coil body shown in FIG. 1.
また、第２の実施例のコイル体を製造するに
は、上記第１の実施例のコイル体の製造方法と同
一の工程、つまり第４図Ａ〜Ｄの工程を踏んで、
中間製品１０を得る。 Further, in order to manufacture the coil body of the second embodiment, the same steps as those of the method of manufacturing the coil body of the first embodiment, that is, the steps shown in FIGS. 4A to 4D, are performed.
An intermediate product 10 is obtained.
この中間製品１０の表面は、導電層８１によつ
て凹凸が形成された状態となつている。この中間
製品１０の表面には、続いて第４図Ｅに示すよう
に蒸着またはスパツタリング等の手段によつて薄
膜１１を形成する。この薄膜１１はその厚みが前
記導電層８１の厚みとほぼ同程度となるように形
成する。ここで中間製品１０の表面には前述のよ
うに凹凸が存在するから、薄膜１１も凹凸状とな
る。すなわち薄膜１１は導電層８１の上面に位置
する凸部薄膜１１Ａと、隣り合う導電層間の凹部
を埋める凹部薄膜１１Ｂとに区分される。なおこ
の薄膜１１としては、金属、ポリシリコンまたは
各種絶縁物等が使用される。 The surface of this intermediate product 10 has irregularities formed by the conductive layer 81. A thin film 11 is then formed on the surface of this intermediate product 10 by means such as vapor deposition or sputtering, as shown in FIG. 4E. This thin film 11 is formed so that its thickness is approximately the same as the thickness of the conductive layer 81. Here, since the surface of the intermediate product 10 has irregularities as described above, the thin film 11 also has an irregular shape. That is, the thin film 11 is divided into a convex thin film 11A located on the upper surface of the conductive layer 81 and a concave thin film 11B that fills the concave portion between adjacent conductive layers. Note that this thin film 11 may be made of metal, polysilicon, various insulators, or the like.
次いで第４図Ｆに示すように薄膜１１の表面に
フオト・レジスト膜１２を形成し、この後第４図
Ｇに示すように凹部薄膜１１Ｂの部分のフオト・
レジスト膜を除去して凸部薄膜１１Ａの上面にの
みにフオト・レジスト膜１２を残す。例えばフオ
ト・レジスト膜の材料が光硬化性のものである場
合、フオトマスクを用いて凸部薄膜１１Ａの上面
のフオト・レジスト膜１２に光を照射し、これに
よりこの部分のフオト・レジスト膜を硬化させ、
未照射部分のフオト・レジスト膜を溶解除去すれ
ばよい。 Next, as shown in FIG. 4F, a photoresist film 12 is formed on the surface of the thin film 11, and then, as shown in FIG.
The resist film is removed, leaving the photo resist film 12 only on the upper surface of the convex thin film 11A. For example, if the material of the photoresist film is photocurable, a photomask is used to irradiate the photoresist film 12 on the upper surface of the convex thin film 11A, thereby hardening the photoresist film in this area. let me,
The photoresist film in the non-irradiated portions may be dissolved and removed.
この後、化学的エツチング法により薄膜１１を
若干エツチングし、第４図Ｈに示すように凸部薄
膜１１Ａにオーバーハング部１３を形成すると共
に凹部薄膜１１Ｂの表面の位置を絶縁層９の高さ
よりも若干低い位置、すなわち導電層８１の凸部
高さと同程度の位置まで後退させる。この工程に
よつて前記凸部薄膜１１Ａと凹部薄膜１１Ｂとは
完全に分割される。なおこのエツチングにおいて
は、薄膜１１としてAlを用いた場合にはエツチ
ング液としてNaO、KOHH系のエツチング液を
用いれば良い。 Thereafter, the thin film 11 is slightly etched by a chemical etching method to form an overhang part 13 on the convex thin film 11A as shown in FIG. is also retreated to a slightly lower position, that is, to a position comparable to the height of the convex portion of the conductive layer 81. By this step, the convex thin film 11A and the concave thin film 11B are completely separated. In this etching, when Al is used as the thin film 11, a NaO or KOHH-based etching solution may be used as the etching solution.
次に第４図Ｉに示すように、SiO，SiO2，
Si3N4等の絶縁膜１４を蒸着またはスパツタリン
グ等によつて形成する。これによつて凹部薄膜１
１Ｂが前記絶縁膜１４で被覆される。なおフオ
ト・レジスト膜１２の表面も絶縁膜１４で被覆さ
れるが、凸部薄膜１１Ａの側面（オーバーハング
部表面）は被覆されない。ここで絶縁膜１４の厚
みは、凹部薄膜１１Ｂを覆う絶縁膜１４の表面位
置が導電層８１の上面を覆う絶縁層９の表面位置
とほぼ一致するように設定する。 Next, as shown in FIG. 4I, SiO, SiO 2 ,
An insulating film 14 made of Si 3 N 4 or the like is formed by vapor deposition, sputtering, or the like. As a result, the recess thin film 1
1B is covered with the insulating film 14. Note that the surface of the photoresist film 12 is also covered with the insulating film 14, but the side surfaces (overhang portion surfaces) of the convex thin film 11A are not covered. Here, the thickness of the insulating film 14 is set so that the surface position of the insulating film 14 covering the recessed thin film 11B substantially matches the surface position of the insulating layer 9 covering the upper surface of the conductive layer 81.
次いで前記導電層８１上の凸部薄膜１１Ａをエ
ツチング液によつて側面から溶解除去する。この
エツチング液としては、前記絶縁膜１４をエツチ
ングせず薄膜１１Ａのみをエツチングするものを
用いれば良く、例えば絶縁膜１４がSiO2で構成
されかつ薄膜１１ＡがAlで構成されている場合
にはKOH，あるいはNaOHを用いれば良い。 Next, the convex thin film 11A on the conductive layer 81 is dissolved and removed from the side surface using an etching solution. As this etching solution, one that etches only the thin film 11A without etching the insulating film 14 may be used. For example, if the insulating film 14 is made of SiO 2 and the thin film 11A is made of Al, KOH , or NaOH may be used.
このようにして、第４図Ｊに示す如く表面が平
坦なコイル部I1が得られる。 In this way, a coil portion I1 having a flat surface as shown in FIG. 4J is obtained.
そして、最後に仮基台４および絶縁層５研摩ま
たはエツチング等の方法によつて除去することに
より第２図のコイル体を得ることができる。 Finally, the temporary base 4 and the insulating layer 5 are removed by a method such as polishing or etching to obtain the coil body shown in FIG. 2.
また、第３の実施例のコイル体を製造するに
は、上記第２の実施例のコイル体の製造方法と同
一の工程、つまり第４図Ａ〜Ｊの工程を踏んで第
４図Ｊに示す中間製品を得る。 In addition, in order to manufacture the coil body of the third embodiment, the same steps as those of the coil body of the second embodiment described above, that is, the steps shown in FIGS. Obtain the intermediate product shown.
以下第４図Ｂに示される工程から第４図Ｊに至
る工程を繰返せば、順次第２層目のコイル部I2，
第３層目のコイル部I3が積層され、最終的に第４
図Ｋに示すような所望の層数のコイル部が形成さ
れる。そして前記各層の導電層８１は直列もしく
は並列に接続される。すなわち第４図Ｂに示す工
程において絶縁層７に貫通孔７１を形成したのと
同様に各層の導電層８１間の絶縁層９に貫通孔９
１を形成し、この貫通孔９１を介して各導電層８
１を電気的に接続する。 By repeating the steps shown in FIG. 4B to FIG. 4J, the coil portions I 2 of the second layer,
The third layer coil part I3 is laminated, and finally the fourth layer
A coil portion having a desired number of layers as shown in FIG. K is formed. The conductive layers 81 of each layer are connected in series or in parallel. That is, in the same way that the through holes 71 are formed in the insulating layer 7 in the step shown in FIG. 4B, the through holes 9 are formed in the insulating layer 9 between the conductive layers 81 of each layer.
1 and each conductive layer 8 is formed through the through hole 91.
1 electrically connected.
上述のようにして所望の層数のコイル部I1〜I3
が形成された後、第４図Ｌに示すように最上層I3
の表面の絶縁層９にも貫通孔９１を形成し、さら
にその上面に金属またはポリシリコン等の導電層
１５を蒸着等によつて形成する。この導電層１５
は、前記貫通孔９１を介して最上層I3の導電層８
１と電気的に接続されたものであり、このコイル
体の他方の端子となる。 The coil portions I 1 to I 3 having the desired number of layers are formed as described above.
After the formation of the top layer I 3 as shown in FIG.
A through hole 91 is also formed in the insulating layer 9 on the surface thereof, and a conductive layer 15 of metal, polysilicon, or the like is further formed on the upper surface by vapor deposition or the like. This conductive layer 15
is the conductive layer 8 of the uppermost layer I 3 through the through hole 91
1, and serves as the other terminal of this coil body.
最後に、仮基台４および絶縁層５を研摩または
エツチング等の方法によつて除去することにより
第３図のコイル体を得ることができる。 Finally, the coil body shown in FIG. 3 can be obtained by removing the temporary base 4 and the insulating layer 5 by a method such as polishing or etching.
上述した各実施例のコイル体は、導電層６、絶
縁層７が基板６１を構成しており、この基板６１
がコイル体全体に機械的強度を与えるものとして
作用する。この場合各コイル体の導電送６は、コ
イル体の一方の端子を構成する。また第３図のコ
イル体の導電層１５は他方の端子を構成する。こ
こで、各コイル体の導電層６は、その材質が金属
であるため、厚さが極めて薄厚であるにもかかわ
らず充分な機械的強度を有する。したがつて、こ
れらのコイル体の構造によれば、充分な機械的強
度が得られる一方、基板６１の占有スペースを小
となし得、コイル体の小形、軽量化が可能とな
る。 In the coil body of each embodiment described above, the conductive layer 6 and the insulating layer 7 constitute a substrate 61.
acts to provide mechanical strength to the entire coil body. In this case, the conductive wire 6 of each coil body constitutes one terminal of the coil body. Further, the conductive layer 15 of the coil body shown in FIG. 3 constitutes the other terminal. Here, since the conductive layer 6 of each coil body is made of metal, it has sufficient mechanical strength even though it is extremely thin. Therefore, according to the structure of these coil bodies, sufficient mechanical strength can be obtained, while the space occupied by the substrate 61 can be reduced, and the coil body can be made smaller and lighter.
また、特に第３図のコイル体の構造によれば、
第１図、第２図のコイル体の構造と比較して、よ
り一層のコイル部の占有スペース率の向上を図る
ことができ、例えば電磁式カートリツジのピツク
アツプ用コイルや小形マイクロホン用のコイルと
して利用すれば、インダクタンスの質量が小さい
こと等により優れた周波数特性を得ることができ
る。 Moreover, especially according to the structure of the coil body shown in FIG.
Compared to the structure of the coil body shown in Figures 1 and 2, the space ratio occupied by the coil part can be further improved, and it can be used, for example, as a pick-up coil for electromagnetic cartridges or as a coil for small microphones. In this case, excellent frequency characteristics can be obtained due to the small mass of the inductance.
なお、上記の各コイル体は、その製造過程にお
いて導電層６の下面に絶縁層５を残しておいても
よく、このようにした場合には絶縁層５により導
電層６を保護することができる。また、導電層６
をあまり厚くすると、渦電流損が大きくなるの
で、その厚さには限度があるが、絶縁層５を必要
な機械的強度が得られる厚さとして残すことによ
り、用途に応じ、任意の厚さの薄膜コイルをつく
ることができる。 In addition, in the manufacturing process of each of the above-mentioned coil bodies, the insulating layer 5 may be left on the lower surface of the conductive layer 6, and in this case, the conductive layer 6 can be protected by the insulating layer 5. . In addition, the conductive layer 6
If the insulating layer 5 is made too thick, the eddy current loss will increase, so there is a limit to its thickness, but by leaving the insulating layer 5 at a thickness that provides the necessary mechanical strength, it can be made to any desired thickness depending on the application. thin film coils can be made.
この発明は、非磁性の薄状金属シートに絶縁層
を形成した基板上に、導電体からなるコイルを形
成したものであるから、絶縁層によりコイルと金
属シートとを確実に絶縁することができ、基板に
よつて充分な機械的強度が得られると共に小形、
軽量化が可能である。また基板の導電層が金属で
あるため、放熱性が良好である等の利点がある。
In this invention, a coil made of a conductor is formed on a substrate having an insulating layer formed on a non-magnetic thin metal sheet, so that the coil and the metal sheet can be reliably insulated by the insulating layer. , the substrate provides sufficient mechanical strength, and the size is small.
It is possible to reduce the weight. Furthermore, since the conductive layer of the substrate is made of metal, there are advantages such as good heat dissipation.
第１図ないし第３図はいずれもこの発明の実施
例として示したコイル体の縦断面図、第４図Ａ〜
Ｌは第１図ないし第３図に示すコイル体の製造方
法の一例を示す工程図、第５図は従来のコイル体
の平面図、第６図は第５図Ｘ−X′線断面図、第
７図は第５図第６図に示すコイル体の製造方法を
示す説明図である。
６……薄状金属シート（導電層）、７……絶縁
層、６１……基板、８１……コイル（導電層）。
1 to 3 are longitudinal sectional views of a coil body shown as an embodiment of the present invention, and FIGS.
L is a process diagram showing an example of the method for manufacturing the coil body shown in FIGS. 1 to 3, FIG. 5 is a plan view of a conventional coil body, FIG. 6 is a sectional view taken along the line XX' in FIG. 5, FIG. 7 is an explanatory diagram showing a method of manufacturing the coil body shown in FIGS. 5 and 6. FIG. 6... Thin metal sheet (conductive layer), 7... Insulating layer, 61... Substrate, 81... Coil (conductive layer).
Claims (1)
基板上に、導電体からなるコイルを形成したこと
を特徴とするコイル体。1. A coil body characterized in that a coil made of a conductor is formed on a substrate made of a non-magnetic thin metal sheet with an insulating layer formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3686485A JPS60246605A (en) | 1985-02-26 | 1985-02-26 | Coil |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3686485A JPS60246605A (en) | 1985-02-26 | 1985-02-26 | Coil |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2261278A Division JPS54115760A (en) | 1978-02-28 | 1978-02-28 | Method of producing multiilayer thin film inductance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60246605A JPS60246605A (en) | 1985-12-06 |
| JPH0442804B2 true JPH0442804B2 (en) | 1992-07-14 |
Family
ID=12481648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3686485A Granted JPS60246605A (en) | 1985-02-26 | 1985-02-26 | Coil |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60246605A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2615151B2 (en) * | 1988-08-19 | 1997-05-28 | 株式会社村田製作所 | Chip coil and method of manufacturing the same |
| JP2002299121A (en) * | 2001-04-02 | 2002-10-11 | Kawasaki Steel Corp | Planar magnetic element |
| CN108303596A (en) * | 2018-01-16 | 2018-07-20 | 宁波市计量测试研究院（宁波市衡器管理所、宁波新材料检验检测中心） | It is a kind of to make the method for ultra-thin coil and ultra-thin coil using film deposition techniques |
-
1985
- 1985-02-26 JP JP3686485A patent/JPS60246605A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60246605A (en) | 1985-12-06 |
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