JPH0441186Y2 - - Google Patents
Info
- Publication number
- JPH0441186Y2 JPH0441186Y2 JP1986047370U JP4737086U JPH0441186Y2 JP H0441186 Y2 JPH0441186 Y2 JP H0441186Y2 JP 1986047370 U JP1986047370 U JP 1986047370U JP 4737086 U JP4737086 U JP 4737086U JP H0441186 Y2 JPH0441186 Y2 JP H0441186Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- upper edge
- quartz glass
- single crystal
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Glass Melting And Manufacturing (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は、チヨクラルスキー法による半導体単
結晶引上に使用される石英ガラスルツボに関する
ものである。[Detailed Description of the Invention] (Field of Industrial Application) The present invention relates to a quartz glass crucible used for pulling semiconductor single crystals by the Czyochralski method.
（従来の技術とこの問題点）
チヨクラルスキー法における単結晶引上では、
従来、主に深さ200〜400mm位の石英ガラスルツボ
中に原料となるシリコンを入れ、これを外部ヒー
ターにより加熱融解し、単結晶を引き上げ成長さ
せている。この方法に使用される石英ガラスルツ
ボは、一般につぎの方法によりつくられる。すな
わち、回転する中空体に水晶粉を供給して所定の
形状に成形した後、内部より加熱融解して製造さ
れるが、内部に気泡を多数含有するうえ、ルツボ
の外側部に未溶融の結晶層が残存し、その結果半
透明な外観を呈する。この未溶融の結晶層は、半
導体単結晶引き上げ時に、外部ヒーターからの熱
線を散乱するので、シリコン融液に接しないルツ
ボ壁上縁部付近の内面温度は、かかる散乱層のな
い透明石英ガラスルツボに比べて低くなりがちで
あつた。(Conventional technology and this problem) In single crystal pulling using the Czyochralski method,
Conventionally, raw material silicon is placed in a quartz glass crucible with a depth of approximately 200 to 400 mm, heated and melted by an external heater, and a single crystal is pulled and grown. The quartz glass crucible used in this method is generally manufactured by the following method. In other words, crystal powder is supplied to a rotating hollow body, molded into a predetermined shape, and then heated and melted from the inside. A layer remains, resulting in a translucent appearance. This unmelted crystal layer scatters the heat rays from the external heater when pulling the semiconductor single crystal, so the inner surface temperature near the upper edge of the crucible wall that does not come into contact with the silicon melt is lower than that of a transparent quartz glass crucible without such a scattering layer. tended to be lower than that of
このため、原料融液であるシリコンとルツボの
主成分であるSiO2が反応して生成する一酸化珪
素の蒸気が、ルツボ壁上縁部内面に凝結、析出、
成長し、原料融液内に落下して結晶成長端に付着
し、単結晶化が阻害されるという欠点があつた。 For this reason, the silicon monoxide vapor produced by the reaction between silicon, which is the raw material melt, and SiO 2 , which is the main component of the crucible, condenses and precipitates on the inner surface of the upper edge of the crucible wall.
It has the disadvantage that it grows, falls into the raw material melt, and adheres to the crystal growth end, inhibiting single crystallization.
（問題点を解決するための手段と作用）
本考案者らは、この問題点を解決するために
種々検討を重ねた結果、本考案に到達したもの
で、これは半透明石英ガラスルツボにおいて、ル
ツボ上縁部付近の外側面をフアイアポリツシユま
たは研削することにより、該上縁部の透明性を向
上せてなることを特徴とする半導体単結晶引上用
石英ガラスルツボである。(Means and effects for solving the problem) The inventors of the present invention have conducted various studies to solve this problem, and have arrived at the present invention. This quartz glass crucible for pulling a semiconductor single crystal is characterized in that the outer surface near the upper edge of the crucible is polished or ground to improve the transparency of the upper edge.
かかるルツボでは、外側上縁部の前記未溶融結
晶層がフアイアポリツシユまたは研削によりなく
なるため、上縁部の熱透過性が高まり、これによ
つてルツボ上縁部付近の内面温度が上昇して、問
題となつていた一酸化珪素蒸気が上縁部に凝結、
析出、成長することなく系外へ排出され、良好な
単結晶を引き上げることができる。 In such a crucible, the unmelted crystal layer at the outer upper edge is removed by fire polishing or grinding, thereby increasing the heat permeability of the upper edge, thereby increasing the inner surface temperature near the upper edge of the crucible. , the problematic silicon monoxide vapor condensed on the upper edge,
It is discharged from the system without precipitation or growth, and a good single crystal can be pulled.
以下に本考案の実施例を示す。 Examples of the present invention are shown below.
（実施例）
第１図に示すように、ルツボ１の上縁より下に
約50mmまでの部分２をフアイアポリツシユし、反
対側が透けて見える程度まで透明性を高め、これ
をチヨクラルスキー法による引上装置（図示せ
ず）にセツトし、原料を入れ加熱融解した後、ル
ツボ壁上縁内面の温度を測定したところ、1420℃
であつた。これに対し従来のルツボでは1350℃
で、明らかに差異が認められた。前記本考案のル
ツボを引上装置に使用すると、ルツボ上縁部への
一酸化珪素の析出物はほとんどなく、良好な単結
晶を引き上げることができた。(Example) As shown in Fig. 1, a portion 2 of approximately 50 mm below the upper edge of the crucible 1 is polished to increase its transparency to the extent that the opposite side can be seen through. After placing the raw materials in a pulling device (not shown) and heating and melting them, the temperature of the inner surface of the upper edge of the crucible wall was measured and found to be 1420℃.
It was hot. In contrast, conventional crucibles have a temperature of 1350°C.
A clear difference was observed. When the crucible of the present invention was used in a pulling device, there was almost no silicon monoxide precipitate on the upper edge of the crucible, and a good single crystal could be pulled.
透明化する上縁部の幅は10〜50mmあれば充分有
効である。 It is sufficiently effective that the width of the upper edge to be made transparent is 10 to 50 mm.
またルツボの直径に大小があつても、融液面と
ルツボ上縁との距離は変らないので、前記上縁部
の幅もルツボの直径には左右されない。 Further, even if the diameter of the crucible is large or small, the distance between the melt surface and the upper edge of the crucible does not change, so the width of the upper edge is not affected by the diameter of the crucible.
（考案の効果）
本考案のルツボでは上縁部の熱透過性が高ま
り、上縁部分内面の温度が上昇して、問題となつ
ていた一酸化珪素の蒸気は凝結、析出、成長する
ことなく系外へ排出され、単結晶化は阻害され
ず、非常に良好な単結晶を成長させることができ
た。しかも本考案のルツボはきわめて簡単な工程
でつくることができるもので、産業上優れた考案
である。(Effects of the invention) In the crucible of this invention, the heat permeability of the upper edge increases, the temperature of the inner surface of the upper edge rises, and the problematic silicon monoxide vapor does not condense, precipitate, or grow. It was discharged out of the system, and single crystallization was not inhibited, making it possible to grow a very good single crystal. Furthermore, the crucible of the present invention can be produced through an extremely simple process, making it an excellent invention from an industrial standpoint.
第１図は本考案の一例である石英ガラスルツボ
の側面図を示す。
１……ルツボ、２……ルツボ上縁より下に約50
mm程度までの部分。
FIG. 1 shows a side view of a quartz glass crucible that is an example of the present invention. 1 ... Crucible, 2... Approximately 50 mm below the upper edge of the crucible
Part up to about mm.
Claims (1)
部付近の外側面をフアイアポリツシユまたは研削
することにより、該上縁部の透明性を向上せてな
ることを特徴とする半導体単結晶引上用石英ガラ
スルツボ。 A quartz glass for pulling a semiconductor single crystal, characterized in that, in a translucent quartz glass crucible, the outer surface near the upper edge of the crucible is polished or ground to improve the transparency of the upper edge. Crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986047370U JPH0441186Y2 (en) | 1986-03-31 | 1986-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986047370U JPH0441186Y2 (en) | 1986-03-31 | 1986-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62162267U JPS62162267U (en) | 1987-10-15 |
| JPH0441186Y2 true JPH0441186Y2 (en) | 1992-09-28 |
Family
ID=30867913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986047370U Expired JPH0441186Y2 (en) | 1986-03-31 | 1986-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0441186Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0653634B2 (en) * | 1989-01-13 | 1994-07-20 | 三菱マテリアル株式会社 | Regeneration method of quartz crucible for pulling silicon single crystal |
| JPH0816039B2 (en) * | 1989-08-30 | 1996-02-21 | 三菱マテリアル株式会社 | Manufacturing method of quartz crucible for pulling silicon single crystal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4019645A (en) * | 1972-12-04 | 1977-04-26 | Heraeus-Schott Quarzschmelze Gmbh | Crucible of fused vitreous silica |
| JPS55140800A (en) * | 1979-04-20 | 1980-11-04 | Nippon Telegr & Teleph Corp <Ntt> | Crucible for crystal growing crucible device |
| JPS5678118A (en) * | 1979-11-30 | 1981-06-26 | Toshiba Ceramics Co Ltd | Quartz glass plate for manufacture of semiconductor |
| JPS5934659A (en) * | 1982-08-20 | 1984-02-25 | Toshiba Corp | Solid-state image pickup device |
-
1986
- 1986-03-31 JP JP1986047370U patent/JPH0441186Y2/ja not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4019645A (en) * | 1972-12-04 | 1977-04-26 | Heraeus-Schott Quarzschmelze Gmbh | Crucible of fused vitreous silica |
| JPS55140800A (en) * | 1979-04-20 | 1980-11-04 | Nippon Telegr & Teleph Corp <Ntt> | Crucible for crystal growing crucible device |
| JPS5678118A (en) * | 1979-11-30 | 1981-06-26 | Toshiba Ceramics Co Ltd | Quartz glass plate for manufacture of semiconductor |
| JPS5934659A (en) * | 1982-08-20 | 1984-02-25 | Toshiba Corp | Solid-state image pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62162267U (en) | 1987-10-15 |
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