JPH043969A - Lead for sealing terminal and manufacture thereof - Google Patents
Lead for sealing terminal and manufacture thereofInfo
- Publication number
- JPH043969A JPH043969A JP10588490A JP10588490A JPH043969A JP H043969 A JPH043969 A JP H043969A JP 10588490 A JP10588490 A JP 10588490A JP 10588490 A JP10588490 A JP 10588490A JP H043969 A JPH043969 A JP H043969A
- Authority
- JP
- Japan
- Prior art keywords
- lead wire
- wire
- glass
- airtight terminal
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000007789 sealing Methods 0.000 title abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 60
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 3
- 229910000531 Co alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000005388 borosilicate glass Substances 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 229910020598 Co Fe Inorganic materials 0.000 abstract description 2
- 229910002519 Co-Fe Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 238000010301 surface-oxidation reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明はトランジスタやＩＣ等のリード線として使用
される気密端子用リード線およびその製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a lead wire for an airtight terminal used as a lead wire for transistors, ICs, etc., and a method for manufacturing the same.
〈従来の技術〉
第４図に示すようにトランジスタやＩＣ等は、従来気密
封止構造とするためにリード線１１は金属外環１２との
間にガラス（例えばホウケイ酸ガラス）１３などを用い
て封止されている。<Prior Art> As shown in FIG. 4, in conventional transistors, ICs, etc., glass (for example, borosilicate glass) 13 is used between the lead wire 11 and the metal outer ring 12 in order to achieve an airtight sealing structure. It is sealed.
尚、同図において１４は半導体素子、１５は半導体素子
とリード線端面とを結ぶボンディングワイヤー １６は
キャップである。In the figure, 14 is a semiconductor element, 15 is a bonding wire connecting the semiconductor element and the end face of the lead wire, and 16 is a cap.
上記のトランジスタの構造においてリード線１１はガラ
ス１３との封止性を高めるために、第５図に示すような
工程で表面酸化処理がなされている。In the above transistor structure, the surface of the lead wire 11 is subjected to surface oxidation treatment in a step as shown in FIG. 5 in order to improve the sealing performance with the glass 13.
即ち、リード線となるコイル状態の線材をカットプレス
し、溶剤で洗浄した後、湿水素中で加熱し更に大気中で
加熱すること等の方法を用いて表面に０．３〜３．０ａ
ｍの酸化膜を生成させ、封止工程にてこの酸化膜とホウ
ケイ酸ガラスやソーダガラス等のガラスとの間で相互拡
散させることにより封止性を良好にすることが行なわれ
ている。That is, a coiled wire material that will become a lead wire is cut and pressed, washed with a solvent, heated in wet hydrogen, and further heated in the atmosphere to give a surface coating of 0.3 to 3.0 mm.
Good sealing performance has been achieved by forming an oxide film of m and causing interdiffusion between this oxide film and glass such as borosilicate glass or soda glass in the sealing process.
〈発明が解決しようとする課題〉
ところが、上記した第５図に示す工程では線材をカット
プレスした後に表面酸化処理するために、
（１）全数を均一に酸化処理することが不可能（線が重
なっているところはうま（酸化できない）であり、得ら
れた気密封止性にバラツキが見られる。<Problems to be Solved by the Invention> However, in the process shown in FIG. The overlapping areas are rough (cannot be oxidized), and there are variations in the obtained hermetic sealing properties.
０）酸化膜の不必要なリード線端面（ボンディングワイ
ヤー接続部）まで酸化され、後のガラス付は工程でこの
部分がガラスに濡れて不良になるものがある。0) In some cases, the oxide film is oxidized to the unnecessary end face of the lead wire (bonding wire connection part), and this part gets wet with the glass during the subsequent glass attachment process, resulting in defects.
などの問題があった。There were other problems.
〈課題を解決するための手段〉
この発明は上記したような従来の問題点を解決するため
になされたもので、第１図にその工程を示すように、リ
ード線を予め線状コイルの状態で表面酸化処理して酸化
膜を生成したのち、カットプレスをしてからガラス封止
することによって得られる気密端子用リード線およびそ
の製造方法を見出したものである。<Means for Solving the Problems> The present invention was made to solve the above-mentioned conventional problems, and as shown in the process shown in FIG. We have discovered a lead wire for an airtight terminal that can be obtained by surface oxidation treatment to form an oxide film, cut-pressing, and glass sealing, and a method for manufacturing the lead wire.
即ち、この発明はリード線貫通用の穴を有する舟形金属
外環とガラスを介して気密絶縁封止するＦｅ、 Ｎｉ、
Ｃｏ、 Ｃｒ合金リード線において、予め連続的に酸
化処理したリード線長尺体を切断、プレス加工後、前記
金属外環とガラス封止してなる気密端子用リード線およ
びリード線貫通用の穴を有する舟形金属外環とガラスを
介して気密絶縁封止するＦｅ％Ｎｉ、 Ｃｏ、 Ｃｒ合
金リード線において、該リード線は線表面を予め線材の
状態で連続的に酸化処理して酸化膜厚０．３〜３．０ｇ
ｍを有する長尺体とし、切断あるいはプレス加工を行な
ったのち前記金属外環とガラス封止することを特徴とす
る気密端子用リード線の製造方法を提供するものである
。That is, the present invention provides Fe, Ni,
In the Co, Cr alloy lead wire, a lead wire long body that has been continuously oxidized in advance is cut and pressed, and then sealed with glass to the metal outer ring to form an airtight terminal lead wire and a lead wire penetration hole. In a Fe%Ni, Co, Cr alloy lead wire that is hermetically insulated and sealed via glass and a boat-shaped metal outer ring having 0.3-3.0g
The present invention provides a method for producing a lead wire for an airtight terminal, characterized in that the lead wire is made into a long body having a length of m, is cut or press-worked, and then sealed with the metal outer ring with glass.
く作用〉
上記したこの発明の方法によるならば、■ 酸化膜厚が
均一になるため、気密封止性が安定する。Effects> According to the method of the present invention described above, (1) The oxide film thickness becomes uniform, so that the hermetic sealing property is stabilized.
■ リード線端面が酸化されないため、端面へのガラス
の濡れがなくなる。■ Since the lead wire end face is not oxidized, the glass does not get wet on the end face.
等の結果が得られるのである。The following results can be obtained.
この発明の方法は、まずリード線表面を酸化処理して酸
化膜を得るのであるが、この際の酸化膜厚を０．３〜３
．０μｍとするのは、０，３μｍ以下ではガラス封止時
に酸化膜が殆んどガラス中に拡散して消滅してしまうた
めガラス封止性が向上せず、また３、０Ｂｍ以上、特に
５．０１１ｍ以上にすると酸化膜が外力により破壊され
やす（なったり気密封止性が低下すると共に、酸化に時
間がかかってコスト高になるためである。The method of this invention first oxidizes the surface of the lead wire to obtain an oxide film, and the thickness of the oxide film at this time is 0.3 to 3.
．． The reason for setting it to 0 μm is that if it is less than 0.3 μm, most of the oxide film will diffuse into the glass and disappear during glass sealing, so the glass sealing property will not improve. This is because if the thickness is greater than 0.011 m, the oxide film is likely to be destroyed by external force, the hermetic sealing performance will deteriorate, and oxidation will take time, resulting in increased costs.
又、酸化処理は酸化処理トンネル炉内に温水中を通過さ
せた温水中を満たして加熱する方法があるが、この方法
以外に例えば大気中で加熱して酸化膜を得る方法もある
。この方法を用いると、同じ酸化膜厚を得るに必要な時
間を湿水素中の場合に比べて相対的に短（（線速を速（
）することができるが、生成される酸化膜は湿水素中の
場合に比べて相対的に母材との密着度が低い欠点をもっ
ている。Further, the oxidation treatment can be carried out by filling an oxidation treatment tunnel furnace with warm water that has been passed through it and heating it, but there is also a method other than this method, for example, by heating in the atmosphere to obtain an oxide film. Using this method, the time required to obtain the same oxide film thickness is relatively short ((linear velocity is increased (
), but the disadvantage is that the oxide film produced has a relatively lower degree of adhesion to the base material than in the case of wet hydrogen.
この発明でリード線としては、Ｆｅ、 Ｎｉ、 Ｃｏ、
Ｃｒ合金線リード線が用いられるが、その組成として
は、例えば、
■ Ｎｉ２７〜３３％、Ｃｏ１６〜２２％、添加元素と
して１．０％以下のＳｉ、 Ｍｎ、 Ｔｉ、 ｕ％Ｃを
含有し、残部Ｆｅの組成からなるもの。In this invention, lead wires include Fe, Ni, Co,
A Cr alloy wire lead wire is used, and its composition is, for example: (1) Contains 27 to 33% Ni, 16 to 22% Co, and 1.0% or less of Si, Mn, Ti, and u%C as additional elements; The balance consists of Fe.
■ Ｎｉ４０〜５２％、添加元素として１．０％以下の
Ｓｉ、 Ｍｎ、 Ｔｉ、 Ｉｄｌ、Ｃを含有し、残部Ｆ
ｅの組成からなるもの。■ Contains 40 to 52% Ni, 1.0% or less of Si, Mn, Ti, Idl, and C as additional elements, and the balance is F.
consisting of the composition of e.
■ Ｃｒ１６〜２０％、添加元素として０．０１〜０．
１％のＴｉおよび１．０％以下のＳｉ、 Ｍｎ％Ｔｉ％
Ａｌ、 Ｃを含有し、残部Ｆｅの組成からなるもの。■ 16-20% Cr, 0.01-0.0% as additional element.
1% Ti and 1.0% or less Si, Mn%Ti%
Contains Al and C, with the balance being Fe.
■ Ｎｉ４０〜４５％、Ｃｒ４〜８％、添加元素として
１．０％以下のＳｉ、 Ｍｎ、 Ｔｉ、 Ａｌ、Ｃを含
有し、残部Ｆｅの組成からなるもの。(2) Contains 40-45% Ni, 4-8% Cr, 1.0% or less of Si, Mn, Ti, Al, and C as additional elements, and the balance is Fe.
等が適当である。etc. are appropriate.
〈実施例〉
以下、この発明の実施−例を第１図及び第２図の工程図
により詳細に説明する。<Example> Hereinafter, an example of implementation of the present invention will be explained in detail with reference to the process diagrams of FIGS. 1 and 2.
実施例１
リード線として真空溶解にて合金化された２９％Ｎｉ−
１７％Ｃｏ−Ｆｅ合金を用意し、これらを線材圧延、伸
線と軟化を繰り返して０．４５φのコイル状線材１とし
た。この線材の抗張力は５５〜９０ｋｇ／ｍｍ２であっ
た。このコイル状線材１を溶剤で洗浄した後、第２図の
工程図により、まず２の酸化処理トンネル炉（温度は６
Ｃｏ〜９Ｃｏ℃）中を０，５〜１０ｍ／分で通過させて
表面酸化処理し、次いで冷却ゾーン３を通過させて巻き
取った。酸化処理トンネル炉２内を満たす気体としては
温水中を通過させた湿水素４を用いた。Example 1 29% Ni alloyed by vacuum melting as a lead wire
A 17% Co-Fe alloy was prepared, and a coiled wire 1 having a diameter of 0.45φ was obtained by repeatedly rolling a wire, drawing and softening the wire. The tensile strength of this wire was 55 to 90 kg/mm2. After cleaning this coiled wire rod 1 with a solvent, first oxidation treatment tunnel furnace 2 (temperature: 6
The sample was passed through Co~9Co°C) at a rate of 0.5~10 m/min for surface oxidation treatment, then passed through a cooling zone 3 and wound up. Wet hydrogen 4 passed through warm water was used as the gas filling the oxidation treatment tunnel furnace 2.
上記の結果、線材の表面に０．３〜３．０μｍの酸化膜
が得られた。酸化膜は主にＦｅ５Ｏ４からなりその中に
ＦｅＯ、Ｆｅ２ｒ３の他Ｃｏ１Ｎｉ、 Ｍｎ、 Ｓｉ等
の酸化物を含有している。As a result of the above, an oxide film of 0.3 to 3.0 μm was obtained on the surface of the wire. The oxide film is mainly made of Fe5O4 and contains oxides such as Co1Ni, Mn, and Si in addition to FeO and Fe2r3.
か（して第２図の工程で表面酸化処理したコイル状線材
は、次いで第１図に示すように所定の形状にカットプレ
スした後、ホウケイ酸ガラス（Ｎａ２０ ＵｚＯｉ
Ｂ２Ｏ３Ｓｉｎ□）を用いて７Ｃｏ〜８Ｃｏ℃で１０
〜２０分ガラス封止を行なった。The coiled wire material whose surface has been oxidized in the step shown in FIG. 2 is then cut and pressed into a predetermined shape as shown in FIG.
B2O3Sin□) at 7Co~8Co℃ for 10
Glass sealing was performed for ~20 minutes.
実施例２
リード線として真空溶解にて合金化された５０％Ｎｉ−
Ｆｅ合金を用意し、これらを線材圧延、伸線と軟化を繰
り返して０．４５φのコイル状の線材１とした。この線
材の抗張力は５５〜９０ｋｇ／ｍｍ２であった。Example 2 50% Ni alloyed by vacuum melting as a lead wire
Fe alloys were prepared, and wire rod rolling, wire drawing, and softening were repeated to obtain a coiled wire rod 1 of 0.45φ. The tensile strength of this wire was 55 to 90 kg/mm2.
このコイル状線材１を溶剤で洗浄した後、第２図の工程
図により、まず２の酸化処理トンネル炉（温度は６Ｃｏ
〜９Ｃｏ℃）中を０．５〜１０ｍ１分で通過させて表面
酸化処理し、次いで冷却ゾーン３を通過させて巻き取っ
た。トンネル炉内を満たす気体としては温水中を通過さ
せた湿水素４を用いた。After cleaning this coiled wire rod 1 with a solvent, it is first oxidized in a tunnel furnace (temperature: 6Co) according to the process diagram in FIG.
~9CoC) for 0.5 to 10 ml for 1 minute to perform surface oxidation treatment, then passed through cooling zone 3 and wound up. Wet hydrogen 4 passed through warm water was used as the gas filling the tunnel furnace.
上記の結果、線材の表面に０．３〜３．０１ｍの酸化膜
が得られた。酸化膜は主にｌ”ｅ２０３からなりその中
にＦｅＯ、Ｆｅａｒ４の他Ｎｉ、 Ｍｎ、 Ｓｉ等の酸
化物を含有している。As a result of the above, an oxide film of 0.3 to 3.01 m was obtained on the surface of the wire. The oxide film is mainly made of l''e203, and contains oxides such as FeO, Fear4, Ni, Mn, and Si.
かくして第２図の工程で表面酸化処理したコイル状線材
は、次いで第１図に示すように所定の形状にカットプレ
スした後、ソーダ酸ガラス（Ｎａ２０−ＢａＯ−Ｓｉｆ
□）を用いて６Ｃｏ〜７Ｃｏ℃で１０〜２０分ガラス封
止を行なった。The coiled wire rod surface oxidized in the step shown in FIG. 2 is then cut and pressed into a predetermined shape as shown in FIG.
Glass sealing was performed using □) at 6Co to 7Co°C for 10 to 20 minutes.
〈発明の効果〉
以上詳細に説明したように、この発明の方法に従って、
前辺って線材表面を酸化した後にカットプレスすること
により、従来のカットプレス後にバッチ処理していた方
法にくらべてガラス封止時にリード線端面等の不必要な
部分までガラスが濡れることがなくなった。<Effects of the Invention> As explained in detail above, according to the method of this invention,
By performing cut press after oxidizing the wire surface on the front side, the glass does not get wet in unnecessary parts such as the end face of the lead wire during glass sealing, compared to the conventional method of batch processing after cut press. Ta.
第３図（ａ）および（ｂ）は実施例１について酸化膜厚
の分布をサンプル数ｎ＝４０個について、この発明によ
るものと従来の方法によるものとについて比較したもの
である。この発明によｐ （ａ）ではリード線同志の重
なりがないため均一に酸化されていることが認められた
。（但し、天＝平均酸化膜厚、Ｃ＝標準偏差である。）
また、この発明によるリード線を用いて気密端子を作っ
たのちリークテストを行なったところ、従来のリード線
では１０−’ｃｃ／ｓｅｃより悪いものが０．１％程度
発生していたが、この発明によるものでは皆無であった
。FIGS. 3(a) and 3(b) compare the distribution of oxide film thickness in Example 1 using the present invention and the conventional method using n=40 samples. According to the present invention, it was found that in p(a), the lead wires did not overlap each other, so that the lead wires were oxidized uniformly. (However, C = average oxide film thickness, and C = standard deviation.) In addition, when a leak test was conducted after making an airtight terminal using the lead wire according to the present invention, it was found that the conventional lead wire had a leakage of 10-'cc. About 0.1% of cases were found to be worse than /sec, but none of them were caused by this invention.
また、このリード線は第６図に示すように水晶振動子用
リード線としても同様に使用できることもわかった。It has also been found that this lead wire can be similarly used as a lead wire for a crystal resonator, as shown in FIG.
同図において２１はリード線、２２は金属カバー２３は
水晶片、２４はサポータ−である。In the figure, 21 is a lead wire, 22 is a metal cover 23 is a crystal piece, and 24 is a supporter.
第１図はこの発明の製造工程を示す説明図、第２図は第
１図中の酸化処理工程の補足説明図、第３図（ａ）はこ
の発明によるリード線の酸化膜厚の分布を示す説明図、
同（ｂ）は従来法によるリード線の酸化膜厚の分布を示
す説明図、第４図はＩＣの気密封止構造を示す説明図、
第５図は従来の気密端子用リード線の製造工程を示す説
明図、第６図は水晶振動子の構造図である。
１・・・コイル線材 ２・・・酸化処理炉３・
・・冷却ゾーン ４・・・湿水素ガス出願人代
理人 弁理士 和 １） 昭第８図
第３区
（ｂ）
膿４（μｍ）
第５図
淘１１ヒ鴫すｌ
第６図
（７ａｍ）FIG. 1 is an explanatory diagram showing the manufacturing process of the present invention, FIG. 2 is a supplementary explanatory diagram of the oxidation treatment process in FIG. 1, and FIG. An explanatory diagram showing,
(b) is an explanatory diagram showing the distribution of the oxide film thickness of the lead wire according to the conventional method, and Fig. 4 is an explanatory diagram showing the hermetic sealing structure of the IC.
FIG. 5 is an explanatory diagram showing the manufacturing process of a conventional lead wire for an airtight terminal, and FIG. 6 is a structural diagram of a crystal resonator. 1... Coil wire rod 2... Oxidation treatment furnace 3.
...Cooling zone 4...Wet hydrogen gas applicant's agent Patent attorney Kazu 1) Showa 8, Section 3 (b) 4 (μm)
Claims (11)
スを介して気密絶縁封止するＦｅ、Ｎｉ、Ｃｏ、Ｃｒ合
金リード線において、予め連続的に酸化処理したリード
線長尺体を切断、プレス加工後、前記金属外環とガラス
封止することを特徴とする気密端子用リード線。(1) For Fe, Ni, Co, and Cr alloy lead wires that are hermetically insulated and sealed via glass and a boat-shaped metal outer ring that has a hole for passing through the lead wires, a long lead wire body that has been continuously oxidized in advance is A lead wire for an airtight terminal, characterized in that the lead wire is sealed with glass to the metal outer ring after cutting and press working.
、添加元素として１．０％以下のＳｉ、Ｍｎ、Ｔｉ、Ａ
ｌ、Ｃを含有し、残部Ｆｅの組成からなることを特徴と
する請求項（１）記載の気密端子用リード線。(2) Lead wire is Ni27-33%, Co16-22%
, 1.0% or less of Si, Mn, Ti, A as additive elements
The lead wire for an airtight terminal according to claim 1, characterized in that the lead wire contains L, C, and the remainder is Fe.
．０％以下のＳｉ、Ｍｎ、Ｔｉ、Ａｌ、Ｃを含有し、残
部Ｆｅの組成からなることを特徴とする請求項（１）記
載の気密端子用リード線。(3) The lead wire is made of 40-52% Ni, with 1 as an added element.
．． The lead wire for an airtight terminal according to claim 1, characterized in that the lead wire contains 0% or less of Si, Mn, Ti, Al, and C, with the remainder being Fe.
．０１〜０．１％のＴｉおよび１．０％以下のＳｉ、Ｍ
ｎ、Ｔｉ、Ａｌ、Ｃを含有し、残部Ｆｅの組成からなる
ことを特徴とする請求項（１）記載の気密端子用リード
線。(4) Lead wire is 16-20% Cr, 0 as added element.
．． 01-0.1% Ti and 1.0% or less Si, M
The lead wire for an airtight terminal according to claim 1, characterized in that the lead wire contains n, Ti, Al, and C, with the remainder being Fe.
加元素として１．０％以下のＳｉ、Ｍｎ、Ｔｉ、Ａｌ、
Ｃを含有し、残部Ｆｅの組成からなることを特徴とする
請求項（１）記載の気密端子用リード線。(5) The lead wire contains 40 to 45% Ni, 4 to 8% Cr, and 1.0% or less of Si, Mn, Ti, and Al as additive elements.
The lead wire for an airtight terminal according to claim 1, characterized in that it contains C and the remainder is Fe.
スを介して気密絶縁封止するＦｅ、Ｎｉ、Ｃｏ、Ｃｒ合
金リード線において、該リード線は線表面を予め線材の
状態で連続的に酸化処理して酸化膜厚０．３〜３．０μ
ｍを有する長尺体とし、切断あるいはプレス加工を行な
ったのち前記金属外環とガラス封止することを特徴とす
る気密端子用リード線の製造方法。(6) In a Fe, Ni, Co, Cr alloy lead wire that is hermetically insulated and sealed via glass and a boat-shaped metal outer ring that has a hole for passing through the lead wire, the lead wire is made continuous on the wire surface in advance in the state of a wire rod. Oxidized film thickness is 0.3-3.0μ by oxidation treatment.
A method for producing a lead wire for an airtight terminal, characterized in that the lead wire is made into a long body having a diameter of m, is cut or press-worked, and then sealed with the metal outer ring with glass.
、添加元素として１．０％以下のＳｉ、Ｍｎ、Ｔｉ、Ａ
ｌ、Ｃを含有し、残部Ｆｅの組成からなることを特徴と
する請求項（６）記載の気密端子用リード線の製造方法
。(7) Lead wire is Ni 27-33%, Co 16-22%
, 1.0% or less of Si, Mn, Ti, A as additive elements
7. The method for producing a lead wire for an airtight terminal according to claim 6, wherein the lead wire contains L, C, and the remainder is Fe.
．０％以下のＳｉ、Ｍｎ、Ｔｉ、Ａｌ、Ｃを含有し、残
部Ｆｅの組成からなることを特徴とする請求項（６）記
載の気密端子用リード線の製造方法。(8) The lead wire is made of 40-52% Ni, with 1 as an added element.
．． 7. The method of manufacturing a lead wire for an airtight terminal according to claim 6, wherein the lead wire contains 0% or less of Si, Mn, Ti, Al, and C, with the remainder being Fe.
．０１〜０．１％のＴｉおよび１．０％以下のＳｉ、Ｍ
ｎ、Ｔｉ、Ａｌ、Ｃを含有し、残部Ｆｅの組成からなる
ことを特徴とする請求項（６）記載の気密端子用リード
線の製造方法。(9) Lead wire is 16-20% Cr, 0 as added element.
．． 01-0.1% Ti and 1.0% or less Si, M
7. The method for producing a lead wire for an airtight terminal according to claim 6, wherein the lead wire contains n, Ti, Al, and C, with the remainder being Fe.
添加元素として１．０％以下のＳｉ、Ｍｎ、Ｔｉ、Ａｌ
、Ｃを含有し、残部Ｆｅの組成からなることを特徴とす
る請求項（６）記載の気密端子用リード線の製造方法。(10) Lead wire is Ni40-45%, Cr4-8%,
1.0% or less of Si, Mn, Ti, Al as additional elements
, C, and the remainder is Fe.
中加熱または湿水素中で加熱したのち、大気中加熱で行
なわれることを特徴とする請求項（６）記載の気密端子
用リード線の製造方法。(11) The lead wire for an airtight terminal according to claim (6), wherein the oxidation treatment of the lead wire is carried out by heating in wet hydrogen, heating in the air, or heating in wet hydrogen and then heating in the air. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10588490A JPH043969A (en) | 1990-04-20 | 1990-04-20 | Lead for sealing terminal and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10588490A JPH043969A (en) | 1990-04-20 | 1990-04-20 | Lead for sealing terminal and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH043969A true JPH043969A (en) | 1992-01-08 |
Family
ID=14419360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10588490A Pending JPH043969A (en) | 1990-04-20 | 1990-04-20 | Lead for sealing terminal and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH043969A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008130395A (en) * | 2006-11-21 | 2008-06-05 | Sumitomo Electric Ind Ltd | Electrode member group for cold cathode fluorescent lamp |
| WO2009128118A1 (en) * | 2008-04-17 | 2009-10-22 | 住友電気工業株式会社 | Electrode member for cold cathode fluorescent lamp |
-
1990
- 1990-04-20 JP JP10588490A patent/JPH043969A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008130395A (en) * | 2006-11-21 | 2008-06-05 | Sumitomo Electric Ind Ltd | Electrode member group for cold cathode fluorescent lamp |
| WO2009128118A1 (en) * | 2008-04-17 | 2009-10-22 | 住友電気工業株式会社 | Electrode member for cold cathode fluorescent lamp |
| KR101037332B1 (en) * | 2008-04-17 | 2011-05-26 | 스미덴 파인 컨덕터 가부시키가이샤 | Cold cathode fluorescent lamp, light source of electric equipment having the same, liquid display device having the light source, and electrode member for the cold cathode fluorescent lamp |
| JP5093932B2 (en) * | 2008-04-17 | 2012-12-12 | 住友電気工業株式会社 | Cold cathode fluorescent lamp, electric device light source, liquid crystal display device, and electrode member for cold cathode fluorescent lamp |
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