JPH0436256U - - Google Patents

Info

Publication number
JPH0436256U
JPH0436256U JP7823990U JP7823990U JPH0436256U JP H0436256 U JPH0436256 U JP H0436256U JP 7823990 U JP7823990 U JP 7823990U JP 7823990 U JP7823990 U JP 7823990U JP H0436256 U JPH0436256 U JP H0436256U
Authority
JP
Japan
Prior art keywords
amorphous silicon
silicon layer
insulating layer
layer
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7823990U
Other languages
English (en)
Japanese (ja)
Other versions
JP2522832Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7823990U priority Critical patent/JP2522832Y2/ja
Publication of JPH0436256U publication Critical patent/JPH0436256U/ja
Application granted granted Critical
Publication of JP2522832Y2 publication Critical patent/JP2522832Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP7823990U 1990-07-25 1990-07-25 薄膜トランジスタ Expired - Lifetime JP2522832Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7823990U JP2522832Y2 (ja) 1990-07-25 1990-07-25 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7823990U JP2522832Y2 (ja) 1990-07-25 1990-07-25 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPH0436256U true JPH0436256U (ko) 1992-03-26
JP2522832Y2 JP2522832Y2 (ja) 1997-01-16

Family

ID=31621338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7823990U Expired - Lifetime JP2522832Y2 (ja) 1990-07-25 1990-07-25 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JP2522832Y2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840936B (zh) * 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法

Also Published As

Publication number Publication date
JP2522832Y2 (ja) 1997-01-16

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