JPH0436033Y2 - - Google Patents
Info
- Publication number
- JPH0436033Y2 JPH0436033Y2 JP19356686U JP19356686U JPH0436033Y2 JP H0436033 Y2 JPH0436033 Y2 JP H0436033Y2 JP 19356686 U JP19356686 U JP 19356686U JP 19356686 U JP19356686 U JP 19356686U JP H0436033 Y2 JPH0436033 Y2 JP H0436033Y2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- metal body
- point metal
- low melting
- flux layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 238000002844 melting Methods 0.000 claims description 28
- 230000008018 melting Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 230000004907 flux Effects 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 14
- 239000000155 melt Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Fuses (AREA)
Description
【考案の詳細な説明】
〈産業上の利用分野〉
本考案は基板型温度ヒユーズの改良に関するも
のである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to an improvement of a substrate type temperature fuse.
〈従来の技術〉
基板型温度ヒユーズは、絶縁基板の片面上に−
対の電極を設け、この電極間に低融点金属体を橋
設し、該低融点金属体上にフラツクス層を設け、
絶縁基板片面の前面上に樹脂のモールド被覆層を
設けた構成である。<Prior art> A substrate-type temperature fuse is a
providing a pair of electrodes, bridging a low melting point metal body between the electrodes, and providing a flux layer on the low melting point metal body;
It has a structure in which a resin mold coating layer is provided on the front surface of one side of the insulating substrate.
〈解決しようとする問題点〉
この基板型温度ヒユーズの作動要領は、保護す
べき電気機器が過電流により発熱すると、その発
熱を当該温度ヒユーズが受熱し、低融点金属体が
溶融し、この溶融金属が第３図に示すように、そ
の表面張力により球状化して分断することにあ
る。しかしながら、この溶融金属の球状化は絶縁
基板に接触した状態で発生し、溶融金属と絶縁基
板との間の接触摩擦力が上記球状化の進行を阻害
するから、球状化の進行速度がそれだけ遅くな
る。従つて、従来の基板型温度ヒユーズにおいて
は作動速度が低速であり問題がある。<Problem to be solved> The operation of this board type temperature fuse is that when the electrical equipment to be protected generates heat due to overcurrent, the temperature fuse receives the heat, the low melting point metal body melts, and this melting As shown in FIG. 3, the metal becomes spherical and fragments due to its surface tension. However, this spheroidization of the molten metal occurs when it is in contact with the insulating substrate, and the contact friction force between the molten metal and the insulating substrate inhibits the progress of the spheroidization, so the speed of spheroidization progresses is correspondingly slow. Become. Therefore, conventional substrate type thermal fuses have a problem in that they operate at a slow speed.
本考案の目的は、基板型温度ヒユーズの作動速
度を高速化することにある。 The purpose of the present invention is to increase the operating speed of a substrate type thermal fuse.
〈問題点を解決するための手段〉
本考案に係る基板型温度ヒユーズは、絶縁基板
上に−対の電極を設け、この電極間に低融点金属
体を橋設し、該低融点金属体上にフラツクス層を
設けた温度ヒユーズにおいて、電極に接合せる低
融点金属体端部上のフラツクス層部分を低融点金
属体中間部上のフラツクス層部分に対し平面的に
膨出させたことを特徴とする構成である。<Means for solving the problem> The substrate type temperature fuse according to the present invention has a pair of electrodes provided on an insulating substrate, a low melting point metal body bridged between the electrodes, and a low melting point metal body bridged between the electrodes. A temperature fuse having a flux layer provided thereon is characterized in that the flux layer portion on the end of the low melting point metal body to be joined to the electrode is bulged planarly relative to the flux layer portion on the middle portion of the low melting point metal body. The configuration is as follows.
〈実施例〉 以下、図面により本考案を説明する。<Example> The present invention will be explained below with reference to the drawings.
第１図は本考案に係る基板型温度ヒユーズを示
す上面説明図、第２図は第１図における−断
面図である。 FIG. 1 is an explanatory top view showing a substrate-type temperature fuse according to the present invention, and FIG. 2 is a cross-sectional view taken in FIG. 1.
第１図並びに第２図において、１は絶縁基板で
あり、例えば、セラミツクス板を用いることがで
きる。２，２は絶縁基板上に設けた−対の電極で
ある。３，３は各電極に接続したリ−ド銅線であ
る。４は電極間に橋設した低融点金属体であり、
該金属体と各電極とは溶接により接合してある。
５はフラツクス層であり、低融点金属体の各端部
上のフラツクス層部分５１は、低融点金属体の中
間部分上のフラツクス層部分５２に対して平面的
に膨出させてあり、フラツクス層部分５１の平均
直径はフラツクス層部分５２の巾の約1.5〜３倍
としてある。フラツクスにはロジンを主成分とし
て、これに活性剤を添加したものを用いることが
できる。６は絶縁基板上に被覆せる硬化型樹脂、
例えば、エポキシ樹脂のモー−ルド被覆層であ
り、デツピングにより成形できる。 In FIGS. 1 and 2, reference numeral 1 denotes an insulating substrate, and for example, a ceramic plate can be used. Reference numerals 2 and 2 indicate a pair of electrodes provided on an insulating substrate. 3 and 3 are lead copper wires connected to each electrode. 4 is a low melting point metal body bridged between the electrodes;
The metal body and each electrode are joined by welding.
Reference numeral 5 denotes a flux layer, in which a flux layer portion 51 on each end of the low melting point metal body is bulged out in a plane with respect to a flux layer portion 52 on the middle portion of the low melting point metal body. The average diameter of the portion 51 is about 1.5 to 3 times the width of the flux layer portion 52. As the flux, one containing rosin as a main component and an activator added thereto can be used. 6 is a curable resin to be coated on an insulating substrate;
For example, it is a mold coating layer of epoxy resin, and can be molded by depping.
上記基板型温度ヒユーズは、保護すべき電気機
器に添着して使用し、当該電気機器が過電流通電
により異常発熱するとまずフラツクス層５が溶融
し、次いで、低融点金属体４が溶融する。この場
合、溶融フラツクスは溶融した低融点金属体を流
動させるためのスペースを提供し、低融点金属体
はその中央を分断箇所としてその分断両側のそれ
ぞれにおいて球状化していく。 The substrate-type temperature fuse is used by attaching it to an electrical device to be protected, and when the electrical device abnormally heats up due to overcurrent, first the flux layer 5 melts, and then the low melting point metal body 4 melts. In this case, the molten flux provides a space for the molten low-melting point metal to flow, and the low-melting point metal becomes spheroidal on each of the two sides of the split, with the center being the dividing point.
この球状化は溶融金属の表面張力に基づき、当
該、溶融金属が球状中心に向かつて絶縁基板との
摩擦力に抗しつつ移動する結果であり、その球状
中心は電極と低融点金属体との接合部分である。
而して低融点金属体の中央部分に至るほど、上記
溶融金属の移動距離が大である。しかしながら、
本考案に係る基板型温度ヒユーズにおいては、低
融点金属体の中間部分におけるフラツクス層５２
の巾を狭くしてあるから、溶融金属が巾方向に広
がるのを防止でき、従つて、溶融金属をほぼ最初
の巾のままで球状中心に向けて移動させ得、絶縁
基板との接触面積を小さくして、小さな接触摩擦
力のもとでその移動を行なわせ得る。 This spheroidization is based on the surface tension of the molten metal, and is the result of the molten metal moving toward the spherical center while resisting the frictional force with the insulating substrate. This is the joint part.
The further the molten metal reaches the center of the low melting point metal body, the greater the distance traveled by the molten metal. however,
In the substrate type temperature fuse according to the present invention, the flux layer 52 in the middle part of the low melting point metal body
Since the width of the sphere is narrow, it is possible to prevent the molten metal from spreading in the width direction, and therefore the molten metal can be moved toward the center of the sphere while maintaining almost its original width, reducing the contact area with the insulating substrate. It can be made small to allow its movement to occur under small contact friction forces.
而して、溶融した低融点金属体の分断点近傍の
溶融金属の球状化進行を円滑に行なわせることが
でき、また、球状化中心の周辺には、膨出形状の
フラツクス層部分の溶融のために球状化に必要な
スペー−スが用意されているから、上記円滑な球
状化進行との共動作用で球状化を迅速に生成させ
ることができる。 As a result, the molten metal near the dividing point of the molten low-melting metal body can smoothly progress into spheroidization, and the bulging-shaped flux layer portion around the center of spheroidization can be prevented from melting. Since the space necessary for spheroidization is prepared for this purpose, spheroidization can be rapidly generated in conjunction with the smooth progress of spheroidization.
〈考案の効果〉
本考案に係る基板型温度ヒユーズは上述した通
りの構成であり、溶融した低融点金属と絶縁基板
との接触摩擦にもかかわらず溶融金属の球状化を
迅速に行わせることができ、迅速な作動性を保証
できる。<Effects of the invention> The substrate-type temperature fuse according to the invention has the configuration described above, and is capable of quickly spheroidizing the molten metal despite the contact friction between the molten low-melting metal and the insulating substrate. and can guarantee quick operation.
なお、本考案は絶縁基板の片面に低融点金属体
と共に低抗体（膜状抵抗）を設ける構成の基板型
温度ヒユーズ、あるいは絶縁基板の片面には低融
点金属体を他面には膜伏抵抗をそれぞれ設ける構
成の基板型温度ヒユーズにも適用できる。 The present invention is a substrate-type temperature fuse in which a low melting point metal body and a low resistance film (membrane resistance) are provided on one side of an insulating substrate, or a low melting point metal body on one side of an insulating substrate and a membrane resistor on the other side. It can also be applied to a substrate-type temperature fuse configured to provide each.
第１図は本考案に係る基板型温度ヒユーズを示
す説明図、第２図は第１図における−断面
図、第３図は従来の基板型温度ヒユーズの作動状
態を示す説明図である。
図において、１は絶縁基板、２，２は電極、４
は低融点金属体、５はフラツクス層、５１，５１
は低融点金属体端部上のフラツクス層部分、５２
は低融点金属体中間部上のフラツクス層部分であ
る。
FIG. 1 is an explanatory diagram showing a substrate type thermal fuse according to the present invention, FIG. 2 is a cross-sectional view taken from FIG. 1, and FIG. 3 is an explanatory diagram showing the operating state of a conventional substrate type thermal fuse. In the figure, 1 is an insulating substrate, 2, 2 are electrodes, 4
is a low melting point metal body, 5 is a flux layer, 51, 51
is the flux layer portion on the end of the low melting point metal body, 52
is the flux layer portion on the middle part of the low melting point metal body.
Claims (1)
低融点金属体を橋設し、該低融点金属体上にフラ
ツクス層を設けた温度ヒユーズにおいて、電極に
接合せる低融点金属体端部上のフラツクス層部分
を、低融点金属体中間部上のフラツクス層部分に
対し平面的に膨出させたことを特徴とする基板型
温度ヒユーズ。 In a temperature fuse in which a pair of electrodes is provided on an insulating substrate, a low melting point metal body is bridged between the electrodes, and a flux layer is provided on the low melting point metal body, the end portion of the low melting point metal body is bonded to the electrode. 1. A substrate-type temperature fuse, characterized in that a flux layer portion thereof is bulged out in a plane with respect to a flux layer portion on an intermediate portion of a low-melting point metal body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19356686U JPH0436033Y2 (en) | 1986-12-15 | 1986-12-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19356686U JPH0436033Y2 (en) | 1986-12-15 | 1986-12-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6399642U JPS6399642U (en) | 1988-06-28 |
| JPH0436033Y2 true JPH0436033Y2 (en) | 1992-08-26 |
Family
ID=31149706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19356686U Expired JPH0436033Y2 (en) | 1986-12-15 | 1986-12-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0436033Y2 (en) |
-
1986
- 1986-12-15 JP JP19356686U patent/JPH0436033Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6399642U (en) | 1988-06-28 |
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