JPH04349196A - Apparatus for film forming treatment - Google Patents

Abstract

PURPOSE:To prevent the heating of a gas feed nozzle and to attain the improvement in the efficiency of film forming treatment and the improvement in the yield of a product in an apparatus for forming a thin film on the surface of the body to be treated by the chemical reaction of a reactive gas fed to the surface of the body to be treated held under heating. CONSTITUTION:In a vacuum treating chamber 3, a part opposite to a chuck plate 2 heated by a lamp 10 for heating is arranged with a gas nozzle 5 for a reactive gas. The gas nozzle 5 is formed by an edgeless frame-like member having heat conductivity. A circulating pump 23 and a cooling water storing tank 24 are connected via a refrigerant feed pipe 21 to an annular water cooling chamber 20 provided along the above feed nozzle 5. In this way, cooling water is fed to the inside of the ring water cooling chamber 20, by which the excessive heating of the gas nozzle 5 by reflected heat from the lump 10 for heating can be prevented.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a film forming apparatus, and more specifically, a reactive gas is supplied to the surface of a heated and maintained object to be processed, and a chemical reaction occurs on the surface of the object to be processed. The present invention relates to a film forming processing apparatus that forms a thin film on the surface of a processing object.

0002

[Prior Art] Generally, as a film forming technique for depositing a thin film of an electrode material or a conductive material on the surface of a semiconductor wafer (hereinafter referred to as a wafer), one or more compound gases (reactive 2. Description of the Related Art A film deposition processing apparatus (CVD) is known in which a desired thin film is formed by supplying a gas (gas) to a wafer surface and causing a chemical reaction on the wafer surface.

[0003] This film-forming processing apparatus is capable of carrying a wafer into a processing chamber in a vacuum atmosphere and holding it at a predetermined temperature (
Tungsten hexafluoride (WF
6) and a reactive gas such as silane (SiH4) or dichlorosilane (SiH2Cl2) at a predetermined ratio and supplied to the wafer surface in the processing chamber to form a desired thin film through a chemical reaction on the wafer surface. be. In this case, multiple wafers (
For example, 25 sheets) are treated as one unit, and the thin film is continuously processed one unit at a time.

0004

[Problems to be Solved by the Invention] However, in the conventional thin film processing apparatus of this type, radiant heat from the heating source of the wafer holding section is transmitted to the reactive gas supply nozzle, so that the surface of the supply nozzle is A film of reactive gas products or the like may adhere, and this film causes a problem in that the reactive gas is not uniformly supplied and the film thickness of each wafer is non-uniform. In addition, the film attached to the supply nozzle may peel off due to heat and become fine particles that adhere to the object to be processed, which not only reduces product yield but also causes problems in that the reliability of the film formation process is lacking. .

The present invention was developed in view of the above circumstances, and by preventing the adverse effects of the heat of the reactive gas supply nozzle, all wafers can be uniformly processed into thin films, and the reliability of the film forming process and product yield can be improved. It is an object of the present invention to provide a film-forming processing apparatus that can improve the performance.

[0006]

[Means for Solving the Problems] In order to achieve the above object, the film forming processing apparatus of the present invention includes a processing object holding section that holds the processing object in a state where the processing object is heated to a predetermined temperature in a processing chamber, and Assuming that the film forming processing apparatus is equipped with a supply nozzle for supplying a reactive gas into a processing chamber, the supply nozzle is disposed at a position facing the object holding part, and a cooling means is attached to the supply nozzle. This is what happens.

In the present invention, the cooling means may have any structure as long as it is attached to the reactive gas supply nozzle, but preferably the supply nozzle is connected to an endless frame having heat conductive properties. It is preferable that the cooling means be formed of a shaped member, and that the cooling means be composed of an endless cooling chamber provided along the endless frame-shaped member, and a refrigerant supply source that supplies a refrigerant into the endless cooling chamber.

[0008] The endless frame member may have any shape as long as it is an endless frame, for example, it may be annular or rectangular. Further, the material of the endless frame-like member may be any material as long as it has heat conductivity, such as aluminum alloy or stainless steel, and the refrigerant may be, for example, water or Gases such as freon can be used. Also,
The refrigerant supply source can be formed, for example, by a circulation pump and a refrigerant storage tank.

[0009]

[Operation] According to the film-forming processing apparatus of the present invention configured as described above, by attaching a cooling means to the reactive gas supply nozzle, the supply nozzle is prevented from radiating heat from the heating source of the object to be processed. In addition to preventing the gas from being heated, it also prevents a film from forming on the surface of the supply nozzle due to the products of the reactive gas, allowing the reactive gas to be supplied at an appropriate mixing ratio. , it is possible to perform thin film processing with uniform film thickness. Furthermore, since the supply nozzle is disposed at a location facing the object to be processed, the reactive gas can be efficiently supplied.

[0010] Furthermore, the supply nozzle is formed of an endless frame-like member having heat conductive properties, and the cooling means includes an endless cooling chamber provided along the endless frame-like member, and a refrigerant supplied into the endless cooling chamber. By configuring the supply nozzle with a refrigerant supply source, the supply nozzle can be efficiently and uniformly cooled.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a schematic cross-sectional view of essential parts of a film forming apparatus according to the present invention, FIG. 2 is an enlarged cross-sectional view of a supply nozzle according to the present invention, and FIG. 3 is a cross-sectional perspective view of the supply nozzle.

[0013] The film forming processing apparatus of the present invention has a chuck plate 2, which is a workpiece holding section, which holds a semiconductor wafer 1 (hereinafter referred to as a wafer), which is a workpiece, with fingers (not shown) disposed on the ceiling. It consists of a vacuum processing chamber 3 and a reactive gas mixing chamber 4 communicating with the lower part of the vacuum processing chamber 3, and a reactive gas (e.g. WF6, SiH4) is placed in the mixing chamber 4 facing the chuck plate 2. An annular gas nozzle 5 is arranged to supply the vacuum processing chamber 3.
Exhaust ports 6 are provided at four locations on the concentric circumference of the ceiling. These exhaust ports 6 are connected to suction means (not shown) so that the vacuum processing chamber 3 and mixing chamber 4 are maintained in a vacuum atmosphere. A window 7 for loading and unloading the wafer 1 is provided on the side wall of the vacuum processing chamber 3, and a gate valve is installed in the window 7 to maintain the vacuum processing chamber 3 and the mixing chamber 4 in a vacuum atmosphere when the window 7 is closed. 8 is attached so that it can be opened and closed.

On the back side, that is, on the upper side of the chuck plate 2, there is a quartz glass 9 that blocks the atmosphere and the vacuum processing chamber 3.
is attached via an O-ring 9a, and a heating lamp 10 is disposed above the quartz glass 9 to heat the chuck plate 2 to approximately 360°C to 700°C. Note that it is also possible to embed a heater in the chuck plate 2 instead of the heating lamp 10.

Further, a reactive gas flow control section 11 is formed in a communication section between the vacuum processing chamber 3 and the mixing chamber 4. The flow control unit 11 includes a rectifying cylinder 13 erected above the communication port 12, a projecting wall 14 protruding from the lower side of the rectifying cylinder 13 toward the inner side of the rectifying cylinder 13, and a rectifying cylinder 13. Cylinder 1
A rectifying fluid 16 is movably disposed within the reactor 3 with a gap 15a therebetween, and controls the flow rate of the reactive gas by making the gap 15b with respect to the projecting wall 14 variable. in this case,
An O-ring 17 is interposed between the plunger portion 16a of the fluid regulator 16 and the mixing chamber 4 to maintain airtightness. Further, a water cooling chamber 19 is formed in the straightening cylinder 13 and the flow regulating body 16, and cooling water is circulated and supplied into the water cooling chamber 19.

On the other hand, as shown in FIGS. 2 and 3, the gas nozzle 5 has two annular chambers 5b and 5c provided on a concentric circle of an annular base body 5a made of stainless steel, for example.
It has a structure in which a plurality of nozzles 5d, 5d... are bored at appropriate intervals at the respective positions, and both annular chambers 5b
, 5c, an annular water cooling chamber 20 is formed. These annular chambers 5b, 5c and water cooling chamber 20 have circumferential grooves 5e, 5e and 20a provided in the annular base body 5a, respectively,
It is composed of lids 5f, 5f; 20b which are closed by welding or the like to the openings of the circumferential grooves 5e, 5e; 20a.

Further, a circulation pump 23 as a refrigerant supply source and a cooling water storage tank 24 are connected to a refrigerant supply pipe 21 connected to the water cooling room 20 via an on-off valve 22. is circulated and supplied into the water cooling chamber 20 from the refrigerant supply pipe 21 by driving the pump 23, thereby preventing the gas nozzle 5 from being excessively heated by the radiant heat from the heating lamp 10. Note that pipe lines 25 and 26 are connected to each of the annular chambers 5b and 5c, respectively, and WF6 gas or SiH4 gas supply sections 28 and 29 are connected to these pipe lines 25 and 26 via on-off valves 27, respectively. There is.

The vacuum processing chamber 3 and the mixing chamber 4 are each made of a material with good corrosion resistance and heat conductivity, such as aluminum alloy, and an annular water cooling chamber 30 is formed at an arbitrary location. This prevents the vacuum processing chamber 3 and mixing chamber 4 from becoming hot during thin film processing. In this case, the water cooling chamber 30 is connected to the pump 23 and the tank 24 together with the water cooling chamber 19 of the flow control unit 11 via the refrigerant supply pipe 21, so that the water cooling chambers 19, 20, and 30 are supplied from the same refrigerant supply source. Cooling water can be supplied. Similarly, the 10 heating lamps can be cooled by the same refrigerant supply source.

Next, the operation of the film forming apparatus of the present invention will be explained. First, the vacuum processing chamber 3 and the mixing chamber 4 are evacuated, and after confirming a vacuum atmosphere, WF6 gas and SiH4 gas are supplied into the vacuum processing chamber 3 (hereinafter referred to as empty deposit), and the chuck plate is A film of the product produced by the thin film treatment is attached to the surface of 2. and,
Turn on the start switch and fill the vacuum processing chamber 3 with WF6 gas and SiH4 without the wafer 1 being carried in.
Empty gas deposit. This pre-processing empty deposit brings the inside of the vacuum processing chamber 3 into a state equivalent to the thin film processing atmosphere. In this state, the wafer 1 is carried into the vacuum processing chamber 3 through the window 7, held by the chuck plate 2, and heated to a predetermined temperature by the heating lamp 10. In this state, after WF6 gas and SiH4 gas are supplied into the mixing chamber 4 and mixed, the gas flow control unit 11
When flowing into the vacuum processing chamber 3 through the wafer 1, a chemical reaction occurs on the surface of the wafer 1, and a desired thin film is formed on the wafer surface by this chemical reaction. At this time, the radiant heat from the heating lamp 10 is transmitted to the surface of the gas nozzle 5, but since cooling water is supplied to the water cooling chamber 20 provided in the gas nozzle 5, the gas nozzle 5 is not heated excessively. There is no deposition of films such as products of WF6 gas and SiH4 gas.

[0020]

[Effects of the Invention] As explained above, according to the film forming processing apparatus of the present invention, since it is configured as described above,
It is possible to prevent the supply nozzle from being heated by radiant heat from the heating source of the object to be processed, and it is also possible to prevent the deposition of a film due to reactive gas products etc. on the surface of the supply nozzle. Therefore, the supply nozzle can be disposed at a portion facing the object to be processed to efficiently supply the reactive gas, and it is possible to improve the efficiency of the film forming process and the product yield.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view showing a film-forming processing apparatus of the present invention.

FIG. 2 is an enlarged sectional view showing a reactive gas supply nozzle in the present invention.

FIG. 3 is a cross-sectional perspective view of a reactive gas supply nozzle.

[Explanation of symbols]

1 Semiconductor wafer (processed object) 2 Chuck plate (processed object holding part) 3 Vacuum processing chamber 5 Gas nozzle (supply nozzle) 10 Heating lamp 20 Annular water cooling chamber 21 Refrigerant supply pipe 23 Circulation pump (refrigerant supply source)

Claims (2)

[Claims] 1. A film forming processing apparatus comprising: a processing object holding part that holds a processing object heated to a predetermined temperature in a processing chamber; and a supply nozzle that supplies a reactive gas into the processing chamber. A film forming processing apparatus characterized in that the supply nozzle is disposed at a position facing the object holding section, and a cooling means is attached to the supply nozzle. 2. The supply nozzle is formed of an endless frame-like member having heat conductivity, and the cooling means includes an endless cooling chamber provided along the endless frame-like member, and supplying a refrigerant into the endless cooling chamber. 2. The film deposition processing apparatus according to claim 1, further comprising a refrigerant supply source.