JPH04346348A - Mask and method for forming resist pattern - Google Patents

Abstract

PURPOSE:To obtain a resist pattern forming method to prevent the adhesiveness of a resist pattern to a substrate layer from lowering. CONSTITUTION:On a semiconductor substrate 1, a resist pattern 2 provided with minute grooves 2a on the periphery of it is formed. Then the resist pattern 2 is hardened. Thus a stress produced when the resist pattern 2 is hardened is distributed due to existence of the minute grooves 2a, and the adhesiveness of the semiconductor substrate 1 to the resist pattern 2 is not lowered.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist pattern forming mask and a resist pattern forming method for forming a resist pattern on an underlayer.

0002

2. Description of the Related Art FIG. 2 is a cross-sectional process diagram showing a conventional resist pattern forming method. When a resist is applied to one surface of the semiconductor substrate 1 and subjected to photolithography processing such as exposure and development, a resist pattern 2 as shown in FIG. 2(a) is formed.

[0003] Thereafter, the resist pattern 2 is subjected to baking, curing, etc. to harden the resist pattern 2.

0004

[Problems to be Solved by the Invention] Conventional resist patterns are formed through the steps described above, so when forming a resist pattern with a large remaining resist pattern, such as in a hole forming process, when the resist pattern 2 is cured, Stress as shown by the arrow in 2(b) accumulates in the resist film, and this stress causes the resist pattern 2 to
There was a problem in that the adhesion between the semiconductor substrate 1 and the semiconductor substrate 1 deteriorated.

The present invention was made in order to solve the above-mentioned problems, and provides a mask for forming a resist pattern and a method for forming a resist pattern, which can prevent a decrease in adhesion between a resist pattern and a base layer. The purpose is to

[0006]

[Means for Solving the Problems] A mask for resist pattern formation according to the present invention is provided corresponding to a resist pattern to be formed, and the peripheral edge of the main pattern is formed into a sub-pattern in the form of narrow stripes. Features.

The resist pattern forming method according to the present invention includes the steps of forming a resist pattern having microgrooves on the surface of the peripheral edge of the pattern, and curing the resist pattern.

[0008]

[Function] In the resist pattern forming mask according to the present invention, a narrow stripe-like sub-pattern is provided at the periphery of the main pattern, so when a resist pattern is formed using the mask, the sub-pattern corresponds to the main pattern. Microgrooves are formed on the surface of the pattern peripheral portion of the formed resist pattern, and the presence of the microgrooves disperses stress generated during curing of the resist pattern.

[0009] In the resist pattern forming method according to the present invention, the step of forming a resist pattern having minute grooves on the surface of the peripheral edge of the pattern is provided, so that the stress generated during curing of the resist pattern is dispersed due to the presence of the minute grooves. do.

[0010]The term "microgroove" in this invention means
A groove having a size that does not reach the substrate during resist pattern development. Furthermore, the term "narrow stripe" refers to a stripe that allows the above-mentioned "microgroove" to be obtained during resist pattern formation.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a cross-sectional process diagram showing a method of forming a resist pattern using a resist pattern forming mask according to the present invention. The case where the resist pattern is a positive type will be described below. First, the structure of the resist pattern forming mask will be described. A main pattern (light shielding portion) 12 corresponding to the resist pattern 2 to be formed is formed on the chrome surface 10 . The peripheral edge of the main pattern 12 is a sub-pattern 14 having a light-transmitting part in the form of narrow stripes. This narrow stripe extends parallel to the direction in which the outer periphery of the main pattern 12 extends (in FIG. 1, the direction penetrating the page). Although the number of narrow stripes in the sub-pattern 14 can be determined as appropriate, it is generally preferable to provide a plurality of narrow stripes.

Using the resist pattern forming mask 20 having such a pattern, the resist coated on one surface of the semiconductor substrate 1 is exposed to a pattern, and then developed. At this time, since the width of the narrow stripe in the sub-pattern 14 is sufficiently narrow, the portion of the resist corresponding to the sub-pattern 14 is not sufficiently exposed. Therefore, when the resist pattern 2 is developed, a plurality of microgrooves 2a are formed on the peripheral surface of the resist pattern 2 as shown in FIG. 1(a).

Next, the resist pattern 2 is baked and cured to harden it. Since the microgrooves 2a are formed on the surface of the resist pattern 2, the stress generated during curing is dispersed in the direction of the arrow shown in FIG. 1(b). Therefore, the adhesion between the resist pattern 2 and the semiconductor substrate 1 does not deteriorate.

Note that in the above embodiment, resist pattern 2
Although the description has been made for the case where the image is of a positive type, the present invention can also be applied to the case of a negative type. In this case, it is necessary to reverse the light transmission characteristics of the main pattern 12 and sub-pattern 14 of the mask 20. Instead of providing a narrow light-transmitting stripe on the peripheral edge of the light-shielding part of the main pattern, a narrow light-shielding stripe is provided on the peripheral edge of the light-transmitting part of the main pattern.

[0015]

As described above, according to the mask for forming a resist pattern according to the present invention, since the sub-pattern in the form of narrow stripes is provided at the periphery of the main pattern, when a resist pattern is formed using the mask, , microgrooves are formed on the surface of the peripheral edge of the resist pattern formed corresponding to the main pattern, and the presence of the microgrooves disperses stress generated during curing of the resist pattern.

According to the resist pattern forming method according to the present invention, since the step of forming a resist pattern having minute grooves on the surface of the peripheral edge of the pattern is provided, the stress generated when the resist pattern is cured is dispersed due to the presence of the minute grooves. .

[0017] Therefore, since the stress generated when the resist pattern is cured is dispersed, there is an effect that deterioration of the adhesion between the underlayer and the resist pattern can be prevented.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional process diagram showing a resist pattern forming method according to the present invention.

FIG. 2 is a cross-sectional process diagram showing a conventional resist pattern forming method.

[Explanation of symbols]

1 Semiconductor substrate 2 Resist pattern 2a Micro groove 12 Main pattern 14 Sub pattern

Claims (2)

[Claims] 1. A resist pattern forming mask for forming a resist pattern on a base layer, the peripheral edge of a main pattern provided corresponding to the resist pattern being formed into a narrow stripe-like sub-pattern. A resist pattern forming mask characterized by the following. 2. A resist pattern forming method for forming a resist pattern on a base layer, the method comprising: forming a resist pattern having microgrooves on the surface of the peripheral edge of the pattern on the base layer; A resist pattern forming method comprising the step of curing the resist pattern.