JPH04341739A - Ion-source device of ion implanter - Google Patents

Abstract

PURPOSE:To steadily supply ions over a long period of time by constructing the ion-source device of an ion implanter in such a manner that the ions may be generated without using any filament in the device. CONSTITUTION:An ion-source device 10 has a vacuum chamber 12. A SOR beam 68 having passed through a beam channel 64 is incident into the chamber 12 through a beryllium window 70. When gas 20 is supplied into the chamber 12 from a tank 72, in this condition the gas 20 is ionized to form plasma gas 22 by irradiation by the SOR beam 68. The plasma gas 22 is led out by each of leading-out electrodes 18 to be emitted out of an ion outlet 26.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] This invention applies to CMOS-DRAM
This is an ion source device for an ion implanter used in semiconductor manufacturing processes, etc., which is capable of stably supplying ions over a long period of time.

0002

[Prior Art] Ion implantation equipment ionizes elements.
pn of a semiconductor by accelerating and driving it into the material.
This is a device for creating bonds, modifying material surfaces, and controlling physical properties. A conventional ion implanter is shown in FIG. In the ion source device 10, a filament 14 is disposed in a vacuum chamber 12, and a current is supplied from a DC power source 16. Further, an extraction electrode 18 is arranged opposite to the filament 14. A predetermined voltage is applied to the extraction electrode 18 by a DC power supply 19 . Ionized gas 20 is supplied into the chamber 12 through a pipe 18 . A coil 24 for converging ionized gas (plasma gas) 22 is disposed around the outer periphery of the chamber 12 .

According to the above structure, when the filament 14 is heated by supplying a direct current, thermoelectrons are generated from the filament 14, and in this state, a gas 20 is generated in the chamber 12.
When supplied, the gas 20 is ionized by collision with thermoelectrons and becomes plasma gas 22. This plasma gas 2
2 is the extraction electrode 18 in a state converged by the coil 24.
The ions are extracted from the ion outlet 26 and emitted from the ion exit 26. The ejected plasma gas 22 is deflected by a mass spectrometer 28, accelerated by an ion accelerator 30, focused by a focusing electromagnet 32, and sequentially implanted into a semiconductor wafer 62 in an ion implantation chamber.

0004

According to the ion source device 10 of FIG. 2, since the filament 14 has a short lifespan,
It was not possible to provide stable ion supply for a long period of time. The present invention aims to solve the problems in the conventional techniques and provide an ion supply device that can perform stable ion implantation over a long period of time.

[0005]

[Means for solving the problem] The invention according to claim 1 includes:
a gas supply means for supplying gas to be ionized; an SOR light generation means for emitting SOR light; and a plasma gas by irradiating the gas supplied from the gas supply means with SOR light generated from the SOR light generation means. This device includes a chamber for generating plasma gas, and an electric field applying means for applying an electric field to the plasma gas generated in the chamber and drawing it out from the chamber. Further, in the invention according to claim 2, the SOR light generating means is a synchrotron, and the synchrotron includes an ion source for injecting the plasma gas into the semiconductor wafer, and an ion source for injecting the plasma gas into the semiconductor wafer. On the other hand, it is characterized in that it also serves as an SOR light source for performing lithography.

[0006]

According to the first aspect of the invention, since the gas is ionized by irradiating the SOR light, a filament is not required and ions can be supplied stably for a long period of time. According to the second aspect of the invention, the SOR light generating means is constituted by a synchrotron, and the synchrotron includes an ion source for implanting plasma gas into the semiconductor wafer, and a semiconductor wafer into which the plasma gas is implanted. Since the synchrotron can also be used as an SOR light source for lithography, one synchrotron can be used as an ion source for ion implantation and as a light source for lithography, resulting in efficient and low-cost semiconductor manufacturing. The process is realized.

[0007]

[Embodiment] An embodiment of the present invention will be described below. Here, a case will be described in which a synchrotron is used as an SOR light generating means and this synchrotron is also used as a light source for lithography. An overview is shown in Figure 3. An electron beam generated by an electron generator (electron gun, etc.) 40 is accelerated to near the speed of light by a linear accelerator (linac) 42, deflected by a deflection electromagnet 46 of a beam transport section 44, and sent to a synchrotron 50 via an inflector 48. into the storage ring 52 of. The electron beam incident on the storage ring 52 is energized by the high frequency acceleration cavity 51, focused by the focusing electromagnets 53 and 55, deflected by the deflection electromagnet 54, and continues to circulate within the storage ring 52. Bending electromagnet 54
The SOR light 59 generated when the beam is deflected is emitted through a beam channel 56 and sent to an exposure device 58. Then, the semiconductor wafer 62 is exposed through the photomask 60.
It is used as a light source for lithography.

A further beam channel 64 leads from the storage ring 52 of the synchrotron 50 and leads to an ion implanter 66 . The SOR light 68 extracted from the beam channel 64 is guided to the ion source device of the ion implanter 66 and used for ionizing gas. The ionized gas (plasma gas) is accelerated and driven into the semiconductor wafer 62.

According to the apparatus of FIG. 3, the ion implanter 66
The semiconductor wafer 62 is first implanted with ions, and then the semiconductor wafer 62 is set in the exposure device 58 to perform lithography, which simplifies the manufacturing process and allows one synchrotron to be used for ion implantation. Since the device can be used both as an ion source for lithography and as a light source for lithography, the device configuration is simplified.

Next, a specific example of the ion implantation device 66 shown in FIG. 3 is shown in FIG. The ion source device 10 has a vacuum chamber 1
It has 2. The beam channel 64 is connected to the rear end of the chamber 12 . Beam channel 64 and chamber 12 are separated by a beryllium window 70. An extraction electrode 18 is provided within the chamber 12 . A predetermined voltage is applied to the extraction electrode 18 by a DC power supply 19 . Gas 20 (ion material) contained in a tank 72 is supplied into the chamber 12 through a pipe 74 . This allows chamber 1
The pressure inside 2 is maintained at about 0.1 Pa. A coil 24 for converging ionized gas (plasma gas) 22 is disposed around the outer periphery of the chamber 12 .

According to the above configuration, the beam channel 64
The SOR light 68 that has passed through is incident into the chamber 12 through the beryllium window 70. When the gas 20 is supplied into the chamber 12 in this state, the gas 20 is supplied with the SOR light 6
8, it is ionized and becomes plasma gas 22. This plasma gas 22 is focused by a coil 24 and extracted by an extraction electrode 18, and then emitted from an ion exit 26. The ejected plasma gas 22 is deflected by a mass spectrometer 28, accelerated by an ion accelerator 30, focused by a focusing electromagnet 32, and sequentially implanted into a semiconductor wafer 62 in an ion implantation chamber. According to the above configuration, since the ion source device 10 does not use a filament, it is possible to stably supply ions for a long period of time.

0012

[Modification example] In the above embodiment, the SOR light generation means was constructed with a synchrotron, but the electron beam emitted from the electron gun is accelerated by a linac and deflected by a deflecting electromagnet to obtain SOR light. It can be configured in various ways. Furthermore, although the above embodiments have shown the case where ion implantation is used in a semiconductor manufacturing process, the present invention can also be applied to the case where ion implantation is used for various purposes such as modifying the surface of materials and controlling physical properties. can.

[0013]

[Effects of the Invention] As explained above, according to the invention as claimed in claim 1, since gas is ionized by irradiating SOR light, a filament is not required and ions can be supplied stably for a long period of time. can. According to the second aspect of the invention, the SOR light generating means is constituted by a synchrotron, and the synchrotron includes an ion source for implanting plasma gas into the semiconductor wafer, and a semiconductor wafer into which the plasma gas is implanted. Since the synchrotron can also be used as an SOR light source for lithography, one synchrotron can be used as an ion source for ion implantation and as a light source for lithography, resulting in efficient and low-cost semiconductor manufacturing. The process is realized.

[Brief explanation of drawings]

FIG. 1 is a plan view showing an embodiment of the present invention; FIG.
This figure shows a specific example of the ion implantation device 66 shown in FIG.

FIG. 2 is a plan view showing a conventional device.

FIG. 3 is a plan view showing an embodiment of the present invention using a synchrotron as the SOR light generating means.

[Explanation of symbols]

10 Ion source device 12 Chamber 18 Extraction electrode (electric field application means) 20 Gas 22 Plasma gas 50 Synchrotron (SOR light generation means) 62
Semiconductor wafer 66 Ion implanter 68 SOR light 72 Tank (gas supply means)

Claims (2)

[Claims] 1. A gas supply means for supplying a gas to be ionized, an SOR light generation means for emitting SOR light, and irradiating the gas supplied from the gas supply means with SOR light generated from the SOR light generation means. An ion source device for an ion implantation apparatus comprising: a chamber for generating plasma gas; and an electric field applying means for applying an electric field to the plasma gas generated in the chamber and extracting the plasma gas from the chamber. 2. The SOR light generating means is a synchrotron, and the synchrotron includes an ion source for injecting gas into the semiconductor wafer with the plasma and performing lithography on the semiconductor wafer into which the plasma gas has been injected. 2. The ion source device for an ion implantation apparatus according to claim 1, wherein the ion source device also serves as a SOR light source for the ion implantation device.