JPH0434143B2 - - Google Patents
Info
- Publication number
- JPH0434143B2 JPH0434143B2 JP1620585A JP1620585A JPH0434143B2 JP H0434143 B2 JPH0434143 B2 JP H0434143B2 JP 1620585 A JP1620585 A JP 1620585A JP 1620585 A JP1620585 A JP 1620585A JP H0434143 B2 JPH0434143 B2 JP H0434143B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- silicon
- glass substrate
- transparent glass
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の製造工程において使
用されるフオトマスク形成のためのフオトマスク
ブランクの形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a photomask blank for forming a photomask used in the manufacturing process of semiconductor devices.
半導体装置、特に微細パターンを要する半導体
装置の製造に際し、写真製版工程で使用されるク
ロム等のハードマスクは、従来のエマルジヨンマ
スクに比べて膜厚の薄い材料が使えるためパター
ンの微細化が可能となり、かつその寿命も長くな
る等の多くの利点がある。このフオトマスクブラ
ンクとしてのハードマスクの形成は、例えば材料
がクロムの場合は第２図に示すように、透明ガラ
ス基板１上にスパツタ法等によりクロム膜２を
500〜1000Å程度の膜厚に形成する。このクロム
膜２の形成は、第３図に示すようなスパツタ装置
を用いる。
When manufacturing semiconductor devices, especially semiconductor devices that require fine patterns, hard masks such as chrome used in the photolithography process can use thinner materials than conventional emulsion masks, allowing for finer patterns. It has many advantages such as longer life. To form a hard mask as a photomask blank, for example, when the material is chromium, as shown in FIG.
Form to a film thickness of approximately 500 to 1000 Å. This chromium film 2 is formed using a sputtering device as shown in FIG.
すなわち、第３図において、１０，１１はそれ
ぞれカソードおよびアノード電極であり、１２は
クロム，タンタルまたは金属シリサイド等のター
ゲツト、１３は高周波電源である。 That is, in FIG. 3, 10 and 11 are cathode and anode electrodes, respectively, 12 is a target such as chromium, tantalum or metal silicide, and 13 is a high frequency power source.
図示のようにAr等の不活性ガスを導入し、こ
れによりターゲツト１２の表面を衝撃することに
よりターゲツト１２の金属に対応した金属薄膜、
例えばクロム膜２が対向する透明ガラス基板１上
に形成される。 As shown in the figure, by introducing an inert gas such as Ar and impacting the surface of the target 12, a thin metal film corresponding to the metal of the target 12 is formed.
For example, a chromium film 2 is formed on opposing transparent glass substrates 1.
上記したように、半導体製造工程で用いられる
クロム等のハードマスクは膜厚が薄いためパター
ンの微細化が可能であり、寿命も長くなる等の多
くの利点がある。透明ガラス基板１上にクロム等
のハードマスクを抵抗加熱法で蒸着する場合に
は、蒸着時に不純物が混入する等の問題があり、
良質のハードマスクブランクが形成できなかつ
た。特に、融点の高い金属は困難である。しか
し、第３図のようなスパツタ法によるハードマス
クの形成方法では、Arプラズマで所望のターゲ
ツト（マスク材）１２を物理的にスパツタさせる
ことにより透明ガラス基板１上にフオトマスクブ
ランクを形成できるので、高融点材料にも有利と
なる。新しいフオトマスクブランクとしての金属
シリサイド膜の形成も、ターゲツト１２に金属シ
リサイドを用いることで容易に形成できる。 As described above, the hard mask made of chromium or the like used in the semiconductor manufacturing process has many advantages, such as being thin, allowing for finer patterns, and longer life. When a hard mask such as chromium is vapor-deposited on the transparent glass substrate 1 by a resistance heating method, there are problems such as impurities being mixed in during vapor deposition.
A good quality hard mask blank could not be formed. It is particularly difficult to use metals with high melting points. However, in the hard mask forming method using the sputtering method as shown in FIG. 3, a photomask blank can be formed on the transparent glass substrate 1 by physically sputtering the desired target (mask material) 12 with Ar plasma. , it is also advantageous for high melting point materials. A metal silicide film can also be easily formed as a new photomask blank by using metal silicide as the target 12.
ところで、従来はフオトマスク材料として透明
ガラス基板１上にクロム（Cr）膜２が形成され
用いられている。近年の半導体産業において大容
量、高集積化が進む中で、高信頼性マスクの必要
性が増してきた。つまり、ウエハステツパ用のレ
テイクルマルクは無欠陥マスクが要求され、かつ
マスク洗浄に対しても洗浄による欠損が問題とな
る。その対策として考えられる金属シリサイド膜
を用いたハードマスクは、基板ガラスがSiO2，
Al2O3等の金属酸化膜ができており、接着性は強
固となる。 By the way, conventionally, a chromium (Cr) film 2 is formed on a transparent glass substrate 1 and used as a photomask material. As the semiconductor industry has become increasingly large-capacity and highly integrated in recent years, the need for highly reliable masks has increased. In other words, a reticle mark for a wafer stepper is required to be a defect-free mask, and defects caused by cleaning also pose a problem when cleaning the mask. A hard mask using a metal silicide film, which is considered as a countermeasure, has a substrate glass made of SiO 2 ,
A metal oxide film such as Al 2 O 3 is formed, and the adhesiveness is strong.
一方、上記金属シリサイド膜形成において、金
属とシリコンの比率が一定でない場合、例えば１
つの金属シリサイドのターゲツト１２を用いた場
合、透明ガラス基板１上にシリコンと金属の融点
の差から成分が不均一な金属シリサイド膜が形成
され、後のマスクプロセス、特にエツチング工程
でエツチングのムラができることがあつたり、部
分的に金属のみの部分ができることで、後のマス
ク洗浄により膜ハガレが生じる場合がある。 On the other hand, in forming the metal silicide film, if the ratio of metal to silicon is not constant, for example, 1
When two metal silicide targets 12 are used, a metal silicide film with non-uniform composition is formed on the transparent glass substrate 1 due to the difference in melting point between silicon and metal, resulting in uneven etching in the subsequent mask process, especially in the etching process. In some cases, the film may peel off during subsequent mask cleaning due to the formation of metal-only parts.
従来のハードマスクは１層または２層構造のも
のが多く、膜形成は簡単であるが、例えば金属シ
リサイドをマスク材料として用いる場合、前記金
属シリサイドは金属とシリコンの２種類の化合物
でターゲツトが構成されているため、各々のスパ
ツタ率の差から一様で安定した金属シリサイド膜
の形成が困難となる問題点があつた。
Most conventional hard masks have a one-layer or two-layer structure, and are easy to form. However, for example, when metal silicide is used as a mask material, the target is composed of two types of compounds, metal and silicon. Therefore, there was a problem in that it was difficult to form a uniform and stable metal silicide film due to the difference in sputtering rate.
この発明は、上記のような従来の問題点を解決
するためになされたもので、一様で高品質のフオ
トマスクブランクを形成することを目的としてい
る。 This invention was made to solve the above-mentioned conventional problems, and aims to form a uniform, high-quality photomask blank.
この発明に係るフオトマスクブランクの形成方
法は、金属とシリコンのターゲツトを別々に設
け、このターゲツトからの金属シリコンの比率を
金属１に対してシリコン２以上に制御して石英等
の透明ガラス基板上に金属シリサイド膜を形成す
るようにしたものである。
The method for forming a photomask blank according to the present invention includes separately providing metal and silicon targets, controlling the ratio of metal silicon to 1 metal to 2 or more silicon, and depositing the photomask blank on a transparent glass substrate such as quartz. A metal silicide film is formed on the surface.
この発明においては、金属とシリコンのターゲ
ツトが別々であるため適切な比率で一様に、かつ
均一な金属シリサイド膜が形成される。
In this invention, since the metal and silicon targets are separate, a uniform metal silicide film is formed at an appropriate ratio.
第１図はこの発明の一実施例を示すフオトマス
クブランクを形成するためのスパツタ装置の概略
構成図である。第１図において、１０，１１はそ
れぞれカソードおよびアノード電極である。１
４，１５は種類の異なつた被スパツタ材料、例え
ば１４はシリコン、１５はMo，Ta，Ｗ等の金属
材料のターゲツトである。カソード電極１０上に
設けられた石英等の透明ガラス基板１上に、Ar
等の不活性ガスプラズマでアノード電極１１側に
設けられた２つの被スパツタ材料のターゲツト１
４，１５をスパツタして金属シリサイド膜を形成
する。
FIG. 1 is a schematic diagram of a sputtering apparatus for forming a photomask blank showing an embodiment of the present invention. In FIG. 1, 10 and 11 are cathode and anode electrodes, respectively. 1
4 and 15 are targets of different types of materials to be sputtered, for example, 14 is silicon, and 15 is a target of metal materials such as Mo, Ta, W, etc. On a transparent glass substrate 1 such as quartz provided on the cathode electrode
Target 1 of two materials to be sputtered provided on the anode electrode 11 side with an inert gas plasma such as
4 and 15 are sputtered to form a metal silicide film.
このように、この発明ではシリコンと金属の２
つの異なつたターゲツトをそれぞれ制御よく用い
ることで、均一な金属シリサイド膜を形成するこ
とができる。例えば石英等の透明ガラス基板１ま
たはアノード電極１１を制御よく回転させり、単
振動を透明ガラス基板１に与えることで得られ
る。また、アノード電極１１上のターゲツト１
４，１５の面積を変えることで、金属とシリコン
の比率を制御して一様で均一な金属シリサイド膜
を形成することができる。 In this way, in this invention, silicon and metal
By using two different targets in a controlled manner, a uniform metal silicide film can be formed. For example, it can be obtained by rotating the transparent glass substrate 1 made of quartz or the like or the anode electrode 11 in a controlled manner to apply simple harmonic motion to the transparent glass substrate 1. Moreover, the target 1 on the anode electrode 11
By changing the areas of 4 and 15, it is possible to control the ratio of metal to silicon and form a uniform metal silicide film.
また、シリコンと金属の比率は、金属１に対し
てシリコン２以上に制御され、光学濃度はマスク
パターン形成後の欠陥検査等が可能な3.0程度に
制御されるのがよい。 Further, the ratio of silicon to metal is preferably controlled to 1 part metal to 2 parts silicon or more, and the optical density is preferably controlled to about 3.0 to enable defect inspection after mask pattern formation.
この発明は以上説明したとおり、金属とシリコ
ンの２つの異なつたターゲツトを金属とシリコン
の比率を金属１に対してシリコン２以上になるよ
うに制御してスパツタすることにより、金属とシ
リコンを別々に石英等の透明ガラス基板上に形成
して金属シリサイド膜を形成するようにしたの
で、一様で、かつ均一なフオトマスクブランクを
形成することができる効果がある。
As explained above, this invention separates metal and silicon by sputtering two different targets, metal and silicon, by controlling the ratio of metal to silicon to 1 for metal and 2 or more for silicon. Since the metal silicide film is formed on a transparent glass substrate such as quartz, it is possible to form a uniform and uniform photomask blank.
第１図はこの発明の一実施例を説明するための
装置の概略構成図、第２図は従来のフオトマスク
の断面図、第３図は従来のスパツタ法を説明する
装置の概略構成図である。
図において、１は透明ガラス基板、１０はカソ
ード電極、１１はアノード電極、１３は高周波電
源、１４はシリコンのターゲツト、１５は金属の
ターゲツトである。なお、各図中の同一符号は同
一または相当部分を示す。
FIG. 1 is a schematic configuration diagram of an apparatus for explaining an embodiment of the present invention, FIG. 2 is a cross-sectional view of a conventional photomask, and FIG. 3 is a schematic configuration diagram of an apparatus for explaining a conventional sputtering method. . In the figure, 1 is a transparent glass substrate, 10 is a cathode electrode, 11 is an anode electrode, 13 is a high frequency power source, 14 is a silicon target, and 15 is a metal target. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
する方法において、前記金属シリサイド膜を、金
属とシリコンの比率を金属１に対してシリコン２
以上に制御してスパツタし、前記シリコンと金属
が所要の比率および膜厚となるように形成するこ
とを特徴とするフオトマスクブランクの形成方
法。 ２ 透明ガラス基板は、石英ガラス基板であるこ
とを特徴とする特許請求の範囲第１項記載のフオ
トマスクブランクの形成方法。[Scope of Claims] 1. A method for forming a metal silicide film on a transparent glass substrate, wherein the metal silicide film has a metal to silicon ratio of 1 metal to 2 silicon.
A method for forming a photomask blank, comprising sputtering under the above-mentioned control so that the silicon and metal have a desired ratio and film thickness. 2. The method for forming a photomask blank according to claim 1, wherein the transparent glass substrate is a quartz glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60016205A JPS61173253A (en) | 1985-01-28 | 1985-01-28 | Formation of photomask material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60016205A JPS61173253A (en) | 1985-01-28 | 1985-01-28 | Formation of photomask material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61173253A JPS61173253A (en) | 1986-08-04 |
| JPH0434143B2 true JPH0434143B2 (en) | 1992-06-05 |
Family
ID=11910009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60016205A Granted JPS61173253A (en) | 1985-01-28 | 1985-01-28 | Formation of photomask material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61173253A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4407815B2 (en) | 2004-09-10 | 2010-02-03 | 信越化学工業株式会社 | Photomask blank and photomask |
| JP5007843B2 (en) * | 2009-09-24 | 2012-08-22 | 信越化学工業株式会社 | Photomask blank and photomask |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323277A (en) * | 1976-08-14 | 1978-03-03 | Konishiroku Photo Ind Co Ltd | Photomasking material and photomask |
| JPS60176235A (en) * | 1984-02-22 | 1985-09-10 | Nippon Kogaku Kk <Nikon> | Masking original plate for x-ray exposure |
-
1985
- 1985-01-28 JP JP60016205A patent/JPS61173253A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323277A (en) * | 1976-08-14 | 1978-03-03 | Konishiroku Photo Ind Co Ltd | Photomasking material and photomask |
| JPS60176235A (en) * | 1984-02-22 | 1985-09-10 | Nippon Kogaku Kk <Nikon> | Masking original plate for x-ray exposure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61173253A (en) | 1986-08-04 |
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