JPH04340241A - Inspection apparatus of semiconductor wafer - Google Patents

Inspection apparatus of semiconductor wafer

Info

Publication number
JPH04340241A
JPH04340241A JP14953791A JP14953791A JPH04340241A JP H04340241 A JPH04340241 A JP H04340241A JP 14953791 A JP14953791 A JP 14953791A JP 14953791 A JP14953791 A JP 14953791A JP H04340241 A JPH04340241 A JP H04340241A
Authority
JP
Japan
Prior art keywords
needle
chip
probe needle
electrode pad
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14953791A
Other languages
Japanese (ja)
Other versions
JPH0618229B2 (en
Inventor
Junichi Inoue
準一 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP14953791A priority Critical patent/JPH0618229B2/en
Publication of JPH04340241A publication Critical patent/JPH04340241A/en
Publication of JPH0618229B2 publication Critical patent/JPH0618229B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enhance the reliability of the title apparatus and to make an operation efficient when chips on a semiconductor wafer are inspected by using a probe needle. CONSTITUTION:The following are installed in the title apparatus: a driving mechanism 2 which moves a wafer-mounting stage 1; a recognition means 3 which recognizes the needle trace, of a probe needle, formed on an electrode pad on a chip; memory 31 which has stored the data of a designated region and the setting range of an area; and a control part 4 which drives and controls the driving mechanism 2. The mounting stage 1 is set in such a way that a prescribed electrode pad 6 on the chip is placed in an inspection position; the probe needle is brought into contact with and pressed to the electrode pad 6 here; the pad is measured electrically. After that, the electrode pad 6 is placed in a recognition position; it is judged by using the recognition means 3 whether the region of the needle trace is included in the designated region or not and whether its area is situated within the setting range. In the case of 'good', a next chip is inspected; in the case of 'bad', the inspection operation is stopped.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は半導体ウエハの検査装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer inspection apparatus.

【0002】0002

【従来の技術】一般に半導体ウエハからICチップを得
る場合、各チップの検査は、各チップが分離される前の
段階、即ちウエハに組み込まれている段階で行われる。
2. Description of the Related Art Generally, when IC chips are obtained from a semiconductor wafer, each chip is inspected before it is separated, that is, when it is assembled into a wafer.

【0003】従来このような検査を行なうためには、ウ
エハ上にマトリクス状に形成された例えば数百個のチッ
プのうちの1個のチップに対し、オペレ−タ−がチップ
内の電極パッドにプロ−ブ針を接触させて適正な位置で
あることを顕微鏡、モニタ−テレビなどで確認し、半導
体ウエハ測定装置の機械精度(自動認識装置の精度も含
む)とチップの繰り返し精度を信頼して、パッドにプロ
−ブ針が正確に接触されているという仮定のもとに、プ
ロ−ブ針に接続されているテスタ−でチップの良否を判
定している。
Conventionally, in order to perform such an inspection, an operator would touch an electrode pad within the chip to one chip out of, for example, several hundred chips formed in a matrix on a wafer. Confirm that the probe needle is in the correct position by making contact with it using a microscope, monitor TV, etc., and trust the mechanical precision of the semiconductor wafer measuring device (including the precision of the automatic recognition device) and the repeatability of the chip. On the assumption that the probe needle is in accurate contact with the pad, the quality of the chip is determined by a tester connected to the probe needle.

【0004】上記の判定作業により、不良チップである
と判定された時点では、■当該チップが真実不良なのか
、■半導体ウエハの電極パッド面に対するプロ−ブ針の
接触状態が悪くて不良と判定されたのか、以上のいずれ
とも判別することができない。従って例えば実際の検査
において連続的にチップの不良が続いた場合は、検査対
象を不良チップが続く前の合格したチップに戻し、再度
プロ−ブ針列を、戻した当該チップに接触させて試験を
やり直している。この場合測定結果が前の結果と同じで
あれば連続して不良と判定されたチップは不良のチップ
として取り扱っている。
[0004] When a chip is determined to be defective through the above determination process, there are two questions: (1) Is the chip truly defective? (2) It is determined that the chip is defective because the contact state of the probe needle with the electrode pad surface of the semiconductor wafer is poor. It is not possible to determine whether this was done or not. Therefore, for example, if chips continue to be defective during actual testing, the test target is returned to the chip that passed before the defective chips continued, and the probe needle row is brought into contact with the returned chip again to perform the test. I'm redoing it. In this case, if the measurement result is the same as the previous result, chips that are consecutively determined to be defective are treated as defective chips.

【0005】[0005]

【発明が解決しようとする課題】しかしながら従来の検
査方法では、定期的にオペレ−タ−により顕微鏡などを
用いて電極パッドに対する接触状態を確認しなければな
らず、自動検査装置を用いているにもかかわらずオペレ
−タ−の手間を要するので効率的ではない。
[Problems to be Solved by the Invention] However, in the conventional inspection method, the operator must periodically check the state of contact with the electrode pad using a microscope, etc., and automatic inspection equipment is not used. However, it is not efficient because it requires a lot of effort on the part of the operator.

【0006】また電極パッドの指定領域の境界線上にプ
ロ−ブ針が接触した場合には検査状態としては不安定で
あるが、この場合にもそのまま検査が行われるので、検
査結果の信頼性が低いという問題点がある。
[0006]Also, if the probe needle comes into contact with the boundary line of the specified area of the electrode pad, the inspection condition will be unstable, but since the inspection will continue in this case as well, the reliability of the inspection results will be increased. The problem is that it is low.

【0007】本発明はこのような事情のもとになされた
ものであり、その目的は、半導体ウエハについて効率的
でかつ信頼性の高い検査を行うことのできる装置を提供
することにある。
The present invention has been made under the above circumstances, and its object is to provide an apparatus capable of efficiently and highly reliable testing of semiconductor wafers.

【0008】[0008]

【課題を解決するための手段】本発明は、半導体ウエハ
の各チップにプロ−ブ針を接触させて電気的測定を行な
い、その測定結果に基づいてチップの良否を検査する装
置において、プロ−ブ針による針跡を認識し、認識した
針跡が予め指定された領域内にあるか否かを判断すると
共に、当該針跡の面積が予め設定された設定範囲にある
か否かを判断し、これら判断結果に基づいてプロ−ブ針
の接触状態を判定する認識手段を設けたことを特徴とす
る。
[Means for Solving the Problems] The present invention provides an apparatus for electrically measuring chips by bringing probe needles into contact with each chip of a semiconductor wafer, and inspecting the quality of the chips based on the measurement results. Recognizes the needle mark caused by the needle and determines whether the recognized needle mark is within a prespecified area, and also determines whether the area of the needle mark is within a preset setting range. The present invention is characterized in that a recognition means is provided for determining the contact state of the probe needle based on these determination results.

【0009】[0009]

【作用】例えば各チップに対して検査が終了する度毎に
、あるいは所定個数のチップを検査した後などに、例え
ばウエハを所定位置に移動し、認識手段により針跡の領
域と面積とについて、夫々設定領域にあるか否か、設定
範囲内にあるか否かについて判断し、その結果プロ−ブ
針の接触状態が良好であると判定されれば、検査を続行
し、不良と判定されれば検査を中止する。
[Operation] For example, each time each chip is inspected, or after a predetermined number of chips have been inspected, the wafer is moved to a predetermined position, and the region and area of the needle trace are determined by the recognition means. It is determined whether the probe needle is in the set range or not, and if it is determined that the contact state of the probe needle is good, the inspection is continued and it is determined to be defective. If so, the inspection will be canceled.

【0010】0010

【実施例】図1は本発明の実施例に係る装置を示す図で
あり、この装置はウエハWを真空吸着により吸着保持す
るウエハ載置台1と、この載置台1をX軸、Y軸、Z軸
に沿って移動させると共にZ軸の回りに回転させるため
の駆動機構2と、ウエハWにおけるチップの電極パッド
に形成された後述のプロ−ブ針による針跡を認識する認
識手段3と、前記駆動機構2及び認識手段3に対して制
御指令を出す制御部4とを備えている。
Embodiment FIG. 1 is a diagram showing an apparatus according to an embodiment of the present invention. a drive mechanism 2 for moving along the Z-axis and rotating around the Z-axis; a recognition means 3 for recognizing needle marks formed by probe needles (to be described later) on electrode pads of chips on the wafer W; The apparatus includes a control section 4 that issues control commands to the drive mechanism 2 and the recognition means 3.

【0011】前記駆動機構2は、各チップの電極パッド
が後述のプロ−ブ針に順次接触されるように載置台1を
移動させると共に、図2に示すようにチップ5の電極パ
ッド6がプロ−ブ針に接触される検査位置Aとその針跡
を認識してプロ−ブ針の接触状態の良否を判定するため
の認識位置Bとの間で移動するように載置台1を駆動す
る機能を持っている。
The drive mechanism 2 moves the mounting table 1 so that the electrode pads of each chip are sequentially contacted with probe needles, which will be described later, and also moves the mounting table 1 so that the electrode pads 6 of the chips 5 are brought into contact with the probe needles, which will be described later. - Function to drive the mounting table 1 to move between the inspection position A where it is contacted by the probe needle and the recognition position B where the trace of the needle is recognized and the quality of the contact state of the probe needle is determined. have.

【0012】前記認識手段3はパッド6上の針跡を認識
して、その領域と面積(大きさ)とを検出する機能と、
検出した領域がメモリ31に格納されている指定領域内
に含まれているか否かを判断すると共に、検出した面積
が、メモリ31に格納されている設定範囲にあるか否か
を判断する機能を備えている。なお針跡の面積について
は、予め下限値と上限値とを定めておき、その間の大き
さであれば適正であると判断することが望ましい。
The recognition means 3 has a function of recognizing the needle mark on the pad 6 and detecting its region and area (size);
The function is to determine whether the detected area is included in the specified area stored in the memory 31 and to determine whether the detected area is within the set range stored in the memory 31. We are prepared. As for the area of the needle mark, it is desirable to set a lower limit and an upper limit in advance, and to judge that the area is appropriate if the size is between them.

【0013】次に上述の装置を用いてウエハWの各チッ
プ5に対して検査を行なう様子について説明する。今ウ
エハWのチップ群のうち図2に示すチップ5の検査を行
なう場合、チップ5の所定の電極パッド6が図3に示す
プロ−ブ針7の下方に、即ち検査位置Aに位置するよう
に駆動機構2を駆動させてウエハWを移動させる。
Next, a description will be given of how each chip 5 of the wafer W is inspected using the above-described apparatus. When inspecting the chip 5 shown in FIG. 2 among the chips on the wafer W, the predetermined electrode pad 6 of the chip 5 is positioned below the probe needle 7 shown in FIG. 3, that is, at the inspection position A. The drive mechanism 2 is driven to move the wafer W.

【0014】続いて駆動機構2により載置台1を上昇さ
せて図3の右側に示すようにプロ−ブ針7を電極パッド
6に接触させて押圧し、図示しないテスタにより電気的
測定を行なう。その後チップ5のパッド6とプローブ針
7の針跡を認識するために駆動機構2により載置台1を
下降させて電極パッド6をプロ−ブ針7から離した後、
当該電極パッド6が認識位置Bに位置するようにウエハ
Wを移動させる。なお前記電気的測定においては、実際
には1個のチップ5上の4個の電極パッド6にプロ−ブ
針7の針跡が残るが、説明の便宜上1個の電極パッド6
の針跡について説明していく。
Subsequently, the mounting table 1 is raised by the drive mechanism 2, and the probe needle 7 is brought into contact with and pressed against the electrode pad 6 as shown on the right side of FIG. 3, and an electrical measurement is performed using a tester (not shown). After that, in order to recognize the pad 6 of the chip 5 and the trace of the probe needle 7, the mounting table 1 is lowered by the drive mechanism 2 to separate the electrode pad 6 from the probe needle 7, and then
The wafer W is moved so that the electrode pad 6 is located at the recognition position B. Note that in the electrical measurement, the traces of the probe needle 7 are actually left on the four electrode pads 6 on one chip 5, but for the sake of explanation, only one electrode pad 6 is left.
I will explain about the needle marks.

【0015】そして前記認識手段3によりプロ−ブ針7
の針跡Rを認識して、この針跡Rの領域と、面積(大き
さ)とを検出し、針跡Rの領域がメモリ31に記憶され
た、図4の(a)に示す指定領域Qの中に含まれるか否
かを判断すると共に、針跡Rの面積が設定範囲内例えば
S1〜S2の範囲にあるか否かを判断する。図4の(b
)に示すように針跡Rの領域が指定領域Qの中に位置し
、かつその面積が設定範囲内にあれば、プロ−ブ針7と
電極パッド6との接触状態は良好であると判定して次の
電極パッドが検査位置Aに位置するようにウエハを移動
させる。また、これらの条件のうちの少なくともその一
方が満たされない場合、例えば図4の(c)に示すよう
に針跡Rの領域が指定領域Qの外にあればプロ−ブ針7
と電極パッド6との接触状態は不適切であると判定して
その後の検査を中止する。
Then, the recognition means 3 detects the probe needle 7.
The area of the needle mark R is recognized, the area and area (size) of the needle mark R are detected, and the area of the needle mark R is stored in the memory 31, as shown in FIG. 4(a). It is determined whether the area of the needle mark R is within the set range, for example, the range of S1 to S2. (b) in Figure 4
), if the region of the needle mark R is located within the specified region Q and its area is within the set range, it is determined that the contact state between the probe needle 7 and the electrode pad 6 is good. Then, the wafer is moved so that the next electrode pad is located at inspection position A. Further, if at least one of these conditions is not satisfied, for example, if the area of the needle mark R is outside the designated area Q, as shown in FIG.
It is determined that the contact state between the electrode pad 6 and the electrode pad 6 is inappropriate, and the subsequent test is discontinued.

【0016】上述実施例では、各チップについてプロ−
ブ針により検査する度毎にプロ−ブ針と電極パッドとの
接触状態を認識するようにしているが、本発明装置の用
い方としては、半導体ウエハの各チップの検査を行なう
工程の中で、プロ−ブ針の針跡の領域と面積とに基づい
て、接触状態を判定する使い方であれば、実施例に限定
されるものではない。
In the above embodiment, the program for each chip is
The state of contact between the probe needle and the electrode pad is recognized each time the probe needle is inspected, but the device of the present invention can be used during the process of inspecting each chip on a semiconductor wafer. However, the present invention is not limited to the embodiments as long as the contact state is determined based on the region and area of the trace of the probe needle.

【0017】[0017]

【発明の効果】以上のように本発明によれば、半導体ウ
エハのチップの検査を行なうにあたって、認識手段によ
りプロ−ブ針の針跡の領域と面積とに基づいてプロ−ブ
針と電極パッドとの接触状態を判定するようにしている
ため、その接触状態を確実に把握することができると共
に、オペレ−タによる顕微鏡などの目視を必要とせずに
接触状態を監視できるので、信頼性が高くかつ効率のよ
い検査を行なうことができる。  また、認識手段によ
り自動的にプロ−ブ針の接触状態を判定できるため、頻
繁にその判定を行なっても煩わしくないから、そのよう
な使い方をすることによって電極パッドの指定領域の境
界線上にプロ−ブ針が接触するといった状況をいち早く
捉えることができる。
As described above, according to the present invention, when inspecting chips on a semiconductor wafer, the recognition means identifies the probe needle and the electrode pad based on the region and area of the probe needle trace. Since the contact state is judged, the contact state can be accurately grasped, and the contact state can be monitored without the need for visual observation using a microscope or other means by the operator, resulting in high reliability. In addition, efficient inspection can be performed. In addition, since the contact state of the probe needle can be automatically determined by the recognition means, it is not troublesome to perform this determination frequently. - Situations such as the needles coming into contact can be quickly detected.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の実施例に係る装置を示す説明図である
FIG. 1 is an explanatory diagram showing an apparatus according to an embodiment of the present invention.

【図2】ウエハが検査位置と認識位置とに置かれている
状態を示す説明図である。
FIG. 2 is an explanatory diagram showing a state in which a wafer is placed at an inspection position and a recognition position.

【図3】プロ−ブ針によるチップの検査の様子を示す説
明図である。
FIG. 3 is an explanatory diagram showing how a chip is inspected using a probe needle.

【図4】プロ−ブ針の針跡について接触状態の判定条件
を示す説明図である。
FIG. 4 is an explanatory diagram showing conditions for determining a contact state with respect to a trace of a probe needle.

【符号の説明】[Explanation of symbols]

1  ウエハ載置台 3  認識手段 5  チップ 6  電極パッド 7  プローブ針 Q  指定領域 R  針跡 W  ウエハ 1 Wafer mounting table 3. Recognition means 5 Chip 6 Electrode pad 7 Probe needle Q Specified area R needle mark W Wafer

Claims (1)

【特許請求の範囲】[Claims] 1、半導体ウエハの各チップにプロ−ブ針を接触させて
電気的測定を行ない、その測定結果に基づいてチップの
良否を検査する装置において、プロ−ブ針による針跡を
認識し、認識した針跡が予め指定された領域内にあるか
否かを判断すると共に、当該針跡の面積が予め設定され
た設定範囲にあるか否かを判断し、これら判断結果に基
づいてプロ−ブ針の接触状態を判定する認識手段を設け
たことを特徴とする半導体ウエハの検査装置。
1. In a device that makes electrical measurements by bringing a probe needle into contact with each chip on a semiconductor wafer, and then inspects the quality of the chip based on the measurement results, the traces made by the probe needle can be recognized and recognized. It is determined whether the needle mark is within a prespecified area, and also whether the area of the needle mark is within a preset setting range, and the probe needle is adjusted based on these judgment results. 1. A semiconductor wafer inspection device characterized by comprising a recognition means for determining a contact state of a semiconductor wafer.
JP14953791A 1991-05-24 1991-05-24 Semiconductor wafer inspection system Expired - Lifetime JPH0618229B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14953791A JPH0618229B2 (en) 1991-05-24 1991-05-24 Semiconductor wafer inspection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14953791A JPH0618229B2 (en) 1991-05-24 1991-05-24 Semiconductor wafer inspection system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13217983A Division JPS6024030A (en) 1983-07-19 1983-07-19 Semiconductor wafer prober

Publications (2)

Publication Number Publication Date
JPH04340241A true JPH04340241A (en) 1992-11-26
JPH0618229B2 JPH0618229B2 (en) 1994-03-09

Family

ID=15477311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14953791A Expired - Lifetime JPH0618229B2 (en) 1991-05-24 1991-05-24 Semiconductor wafer inspection system

Country Status (1)

Country Link
JP (1) JPH0618229B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644245A (en) * 1993-11-24 1997-07-01 Tokyo Electron Limited Probe apparatus for inspecting electrical characteristics of a microelectronic element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644245A (en) * 1993-11-24 1997-07-01 Tokyo Electron Limited Probe apparatus for inspecting electrical characteristics of a microelectronic element

Also Published As

Publication number Publication date
JPH0618229B2 (en) 1994-03-09

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