JPH043394A - Semiconductor non-volatile storage device - Google Patents

Semiconductor non-volatile storage device

Info

Publication number
JPH043394A
JPH043394A JP10285990A JP10285990A JPH043394A JP H043394 A JPH043394 A JP H043394A JP 10285990 A JP10285990 A JP 10285990A JP 10285990 A JP10285990 A JP 10285990A JP H043394 A JPH043394 A JP H043394A
Authority
JP
Japan
Prior art keywords
blocks
erased
selectively
set
collectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10285990A
Inventor
Takaaki Nozaki
Tatsuo Tsuchiya
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP10285990A priority Critical patent/JPH043394A/en
Publication of JPH043394A publication Critical patent/JPH043394A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To collectively erase one or more selected blocks to shorten the erase time by providing a word line decoding circuit with latch circuits which can be selectively set by a block address.
CONSTITUTION: A word line decoding circuit 101 is provided with latch circuits 102, 103, and 104. The block address is selected by an address decoder 114. When blocks 111 and 112 will be erased, latch circuits 102 and 103 are set by the block address, and blocks 111 and 112 are simultaneously erased with one erase operation. The block 113 is not erased in this case because the latch circuit 104 is not set, and plural blocks are selectively erased. Though two blocks are collectively erased, one or more arbitrary blocks can be selectively and collectively erased.
COPYRIGHT: (C)1992,JPO&Japio
JP10285990A 1990-04-20 1990-04-20 Semiconductor non-volatile storage device Pending JPH043394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10285990A JPH043394A (en) 1990-04-20 1990-04-20 Semiconductor non-volatile storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10285990A JPH043394A (en) 1990-04-20 1990-04-20 Semiconductor non-volatile storage device

Publications (1)

Publication Number Publication Date
JPH043394A true JPH043394A (en) 1992-01-08

Family

ID=14338647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10285990A Pending JPH043394A (en) 1990-04-20 1990-04-20 Semiconductor non-volatile storage device

Country Status (1)

Country Link
JP (1) JPH043394A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0559213A2 (en) * 1992-03-05 1993-09-08 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JPH05325576A (en) * 1992-03-05 1993-12-10 Toshiba Corp Nonvolatile semiconductor storage device
EP0691008A1 (en) * 1993-03-26 1996-01-10 Lexar Microsystems, Inc. Flash memory mass storage architecture
JP2007250186A (en) * 2007-07-09 2007-09-27 Hitachi Ulsi Systems Co Ltd Nonvolatile semiconductor memory device
JP2010519674A (en) * 2007-02-27 2010-06-03 モサイド・テクノロジーズ・インコーポレーテッド Decoding the control of the address change detection in the page erase function
US8305806B2 (en) 2009-05-06 2012-11-06 Samsung Electronics Co., Ltd. Nonvolatile memory device and method for controlling word line or bit line thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0559213A2 (en) * 1992-03-05 1993-09-08 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JPH05325576A (en) * 1992-03-05 1993-12-10 Toshiba Corp Nonvolatile semiconductor storage device
EP0559213A3 (en) * 1992-03-05 1995-05-24 Tokyo Shibaura Electric Co
EP0691008A1 (en) * 1993-03-26 1996-01-10 Lexar Microsystems, Inc. Flash memory mass storage architecture
EP0691008A4 (en) * 1993-03-26 1998-03-25 Cirrus Logic Inc Flash memory mass storage architecture
JP2010519674A (en) * 2007-02-27 2010-06-03 モサイド・テクノロジーズ・インコーポレーテッド Decoding the control of the address change detection in the page erase function
JP2013168211A (en) * 2007-02-27 2013-08-29 Mosaid Technologies Inc Decoding control with address transition detection in page erase function
KR101469295B1 (en) * 2007-02-27 2014-12-04 컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드 Decoding the control with the address transition detection in a page deletion
JP2007250186A (en) * 2007-07-09 2007-09-27 Hitachi Ulsi Systems Co Ltd Nonvolatile semiconductor memory device
JP4712769B2 (en) * 2007-07-09 2011-06-29 ルネサスエレクトロニクス株式会社 Nonvolatile semiconductor memory device
US8305806B2 (en) 2009-05-06 2012-11-06 Samsung Electronics Co., Ltd. Nonvolatile memory device and method for controlling word line or bit line thereof

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