JPH04337629A - Semiconductor device manufacturing apparatus - Google Patents

Abstract

PURPOSE:To solve the problem of film thickness variation of the oxide film formed on a wafer caused by the position of the wafer in the furnace by separating the gas combustion chamber and the wafer processing chamber and sending the steam generated by gas combustion through a steam introduction pipe with holes, which runs from the combustion chamber. CONSTITUTION:The internal sections of a furnace pipe 1 is separated into a combustion chamber 3 and a process chamber 6 which processes a wafer 8 transported by a boat 7. Therefore, the steam produced by combustion of hydrogen and oxygen introduced by the gas introduction pipes 2A, 2B is uniformly carried to the process chamber 6 by a steam introduction pipe 5 with holes to achieve wafer processing. In this way, since the steam is uniformly carried to the process chamber 6, it is possible to limit variations in the oxide film formed on the wafer surface. The farther tha holes in the steam introduction pipe 5 are from the combustion chamber, the more the size and number of holes increase. Thereby the steam spray amount can be kept constant.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a diffusion furnace apparatus.

0002

2. Description of the Related Art In a conventional diffusion furnace apparatus, as shown in FIG. 2, gas introduction pipes 2A and 2B are provided at one closed end of a furnace core tube 1, which has one end closed and the other end open. It had a similar structure. Then, hydrogen and oxygen are introduced through the gas introduction pipes 2A and 2B and burned, and the generated steam is used to form an oxide film on a semiconductor wafer (hereinafter simply referred to as a wafer) 8 carried by a boat 7 into the furnace core tube. Processes such as forming were being carried out.

0003

[Problems to be Solved by the Invention] Since the conventional semiconductor device manufacturing apparatus described above processes wafers using steam generated by gas combustion, steam is formed near the gas combustion part and near the open end 4. There is a problem in that the characteristics of the semiconductor device vary due to variations in the thickness of the oxide film and the like.

0004

[Means for Solving the Problems] The semiconductor device manufacturing apparatus of the present invention includes a cylindrical furnace core tube with one end closed and the other end open, and a furnace core tube connected to the closed end of the furnace core tube. a plurality of gas introduction pipes; a gas combustion chamber provided within the furnace core tube for combusting the gas introduced from the gas introduction pipes to generate steam; and a gas combustion chamber provided adjacent to the gas combustion chamber for processing semiconductor wafers. The apparatus includes a processing chamber in which the process is carried out, and a steam introduction pipe provided within the processing chamber for introducing the steam into the processing chamber.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings. FIG. 1 is a schematic cross-sectional view of one embodiment of the present invention.

In FIG. 1, a furnace core tube 1 has one end closed and the other end 4 open. Gas introduction pipes 2A and 2B are connected to the closed end of the furnace core tube 1 and drawn into the internal combustion chamber 3. A processing chamber 6 is provided adjacent to the combustion chamber 3, and a steam introduction pipe 5 with a plurality of holes is provided in the upper part of the processing chamber 6.

According to this embodiment configured as described above,
Inside the furnace core tube 1, the combustion chamber 3 and the processing chamber 6 that processes the wafers 8 brought in by the boat 7 are separated, so that hydrogen and oxygen generated by combustion of the hydrogen and oxygen introduced through the gas introduction tubes 2A and 2B are separated. The generated steam can be uniformly fed into the processing chamber 6 through a perforated quartz steam introduction pipe 5 to process wafers. In this way, since the steam is sent almost uniformly to the processing chamber 6, variations in the oxide film formed on the wafer can be suppressed.

[0008] The amount of steam blown out can be made constant by making the holes in the steam introduction pipe 5 larger as the distance from the combustion chamber increases or by increasing the number of holes.

[0009]

[Effects of the Invention] As explained above, the present invention separates the gas combustion chamber from the wafer processing chamber, and allows the steam generated by the combustion of the gas to be sent from the combustion chamber through the perforated team introduction pipe. Therefore, it is possible to improve the film thickness variation depending on the position in the furnace of the oxide film formed on the wafer.

[Brief explanation of drawings]

FIG. 1 is a schematic cross section of an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a conventional diffusion furnace.

[Explanation of symbols]

1 Furnace core tube 2A, 2B Gas introduction pipe 3 Combustion chamber 4 Open end 5 Steam introduction pipe 6 Processing room 7 Boat 8 Wafer

Claims (1)

[Claims] Claim 1: A cylindrical furnace core tube with one end closed and the other end open, a plurality of gas introduction tubes connected to the closed end of the furnace core tube, and a plurality of gas introduction tubes provided in the furnace core tube. a gas combustion chamber that burns gas introduced from the gas introduction pipe to generate steam; a processing chamber that is provided adjacent to the gas combustion chamber that processes semiconductor wafers; and a processing chamber that is provided within the processing chamber that generates the steam. 1. A semiconductor device manufacturing apparatus, comprising: a steam introduction pipe for introducing steam into a processing chamber.