JPH04337234A - Scanning electron microscope - Google Patents
Scanning electron microscopeInfo
- Publication number
- JPH04337234A JPH04337234A JP3110156A JP11015691A JPH04337234A JP H04337234 A JPH04337234 A JP H04337234A JP 3110156 A JP3110156 A JP 3110156A JP 11015691 A JP11015691 A JP 11015691A JP H04337234 A JPH04337234 A JP H04337234A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- energy
- signal
- fine
- secondary electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 abstract description 8
- 230000005684 electric field Effects 0.000 abstract description 7
- 230000003595 spectral effect Effects 0.000 abstract description 7
- 238000000605 extraction Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Landscapes
- Tests Of Electronic Circuits (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は走査電子顕微鏡に関し、
その機能を拡大するために二次電子の保有エネルギーを
検出して像形成を行う方法に関する。[Industrial Field of Application] The present invention relates to a scanning electron microscope.
This invention relates to a method of forming images by detecting the energy possessed by secondary electrons in order to expand its functionality.
【0002】0002
【従来の技術】走査電子顕微鏡においては、二次電子の
放出数の変化を検出して試料表面の凹凸,表面電位,局
部的な電界,磁界などの情報媒体として像形成を行って
おり、二次電子エネルギーの変化を検出することは不可
能である。しかし、二次電子のエネルギー分光は電子ビ
ームテスタで実用に供されており、日本学術振興会第8
5回研究会資料PP60−65ほか多数の報告がある。[Prior Art] In a scanning electron microscope, images are formed by detecting changes in the number of secondary electrons emitted as information media, such as irregularities on the surface of a sample, surface potential, local electric fields, magnetic fields, etc. It is impossible to detect changes in secondary electron energy. However, energy spectroscopy of secondary electrons has been put into practical use with an electron beam tester, and the
There are many reports including 5th study meeting materials PP60-65.
【0003】0003
【発明が解決しようとする課題】しかしながら前記従来
技術においては、二次電子放出効率が試料の凹凸,試料
表面の仕事関数,表面電位,試料近傍の電界または磁界
などに依存するため、像解釈が困難となる場合も多く見
られる。また、表面電位,磁化の強さなどの計測にも不
向きである。一方、電子ビームテスタなど試料表面電位
の測定が可能な技術も実用化されているが、二次電子の
エネルギーの変化ではなく、やはり二次電子放出数の変
化を情報媒体として像形成を行っている。However, in the prior art described above, image interpretation is difficult because the secondary electron emission efficiency depends on the unevenness of the sample, the work function of the sample surface, the surface potential, the electric field or magnetic field near the sample, etc. There are many cases where this is difficult. Furthermore, it is not suitable for measuring surface potential, magnetization strength, etc. On the other hand, technologies such as electron beam testers that can measure the sample surface potential have been put into practical use, but images are formed using changes in the number of secondary electrons emitted as information media rather than changes in the energy of secondary electrons. There is.
【0004】本発明の目的は、走査電子顕微鏡において
二次電子エネルギーの変化を検出して像形成を行う機能
を付加し、表面電位像や微小磁界像などによる新しい観
察手段を提供することにある。An object of the present invention is to add a function to a scanning electron microscope to form an image by detecting changes in secondary electron energy, and to provide a new means of observation using surface potential images, minute magnetic field images, etc. .
【0005】[0005]
【課題を解決するための手段】上記目的は、試料と二次
電子検出器の間に設けたエネルギー分光器の電圧を変化
させた時の二次電子信号を上限,下限レベルが一定とな
るよう信号処理を行った後、閾値を設けて信号の比較な
どを行ったときの分光グリッド電圧を読み取ることによ
り、二次電子のエネルギー幅やエネルギー差を検出可能
となるが、これらの情報を用いて像形成を行うことによ
り達成される。[Means for solving the problem] The above purpose is to make the upper and lower limit levels of the secondary electron signal constant when changing the voltage of the energy spectrometer installed between the sample and the secondary electron detector. After signal processing, it is possible to detect the energy width and energy difference of secondary electrons by setting a threshold value and comparing the signals by reading the spectral grid voltage. This is achieved by performing image formation.
【0006】[0006]
【作用】試料と二次電子検出器の間に設けられたエネル
ギー分光器の分析グリッド電圧を変化させてエネルギー
分別された二次電子信号をデジタル化し、コンピュータ
処理により信号の上限,下限レベルを検出して基準との
比較を行い、二次電子検出器のバイアス電圧を前記上限
,下限レベルが一定となるよう制御する。それによって
信号の定量化が可能となり、分析グリッド電圧を読み取
ることにより二次電子のエネルギー幅,適当な閾値を設
けたときの二次電子信号間のエネルギー差などを知るこ
とが出来る。[Operation] The energy-separated secondary electron signal is digitized by changing the analysis grid voltage of the energy spectrometer installed between the sample and the secondary electron detector, and the upper and lower limit levels of the signal are detected by computer processing. Then, the bias voltage of the secondary electron detector is controlled so that the upper and lower limit levels are constant. This makes it possible to quantify the signal, and by reading the analysis grid voltage, it is possible to know the energy width of the secondary electrons and the energy difference between the secondary electron signals when an appropriate threshold is set.
【0007】[0007]
【実施例】図1に本発明の原理を示す。電子線1を試料
6に照射することにより二次電子2が放出されるが、そ
の放出数は試料表面の凹凸,仕事関数,表面電位などに
依存する。一方、二次電子の保有エネルギーは表面電位
や局部的な電界,磁界の影響を受けるため、これを検出
することにより通常のSEM像では得られない有用な情
報をもたらす。二次電子のエネルギー分別を行うため、
試料と二次電子検出器の間に分光グリッド3を設けてバ
イアス電源5の出力電圧を調節器4で変化させると二次
電子検出器の出力電流は曲線10のように変化する。ま
た、試料の表面電位などが変化すると一例として曲線1
1のように変わる。また、電源8により正電圧にバイア
スされた電極7は二次電子の引出および電界分布を均一
化するためのバッファの作用をする。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows the principle of the present invention. Secondary electrons 2 are emitted by irradiating the sample 6 with the electron beam 1, and the number of emitted secondary electrons depends on the unevenness of the sample surface, work function, surface potential, and the like. On the other hand, since the energy possessed by secondary electrons is affected by the surface potential and local electric and magnetic fields, detecting this provides useful information that cannot be obtained from ordinary SEM images. To perform energy separation of secondary electrons,
When a spectroscopic grid 3 is provided between the sample and the secondary electron detector and the output voltage of the bias power supply 5 is varied by the regulator 4, the output current of the secondary electron detector changes as shown by a curve 10. In addition, when the surface potential of the sample changes, for example, curve 1
It changes like 1. Further, the electrode 7 biased to a positive voltage by the power source 8 functions as a buffer for extracting secondary electrons and making the electric field distribution uniform.
【0008】図2は本発明の一実施例を示すもので、試
料6の表面において対物レンズ13により収束された電
子線1の照射領域で発生した二次電子2は、分光グリッ
ド3によりエネルギー分別されたのち二次電子検出器9
で検出される。二次電子信号は、D/A変換器14でデ
ジタル化されてメモリ15に格納される。レベル補正は
補正回路18において信号の上限,下限を検出して基準
と比較し、ズレを生じないようD/A変換器17を介し
て二次電子検出器9のバイアス電圧を制御する。FIG. 2 shows an embodiment of the present invention, in which secondary electrons 2 generated in the irradiation area of the electron beam 1 focused by the objective lens 13 on the surface of the sample 6 are energy-separated by a spectroscopic grid 3. Secondary electron detector 9
Detected in The secondary electronic signal is digitized by the D/A converter 14 and stored in the memory 15. For level correction, the upper and lower limits of the signal are detected in the correction circuit 18 and compared with a reference, and the bias voltage of the secondary electron detector 9 is controlled via the D/A converter 17 so as not to cause a deviation.
【0009】また、分光グリッドには、信号発生回路1
9の出力をD/A変換器17を介して電源28を制御す
ることにより得られた信号が加えられる。メモリ15に
格納された二次電子信号は読みだされたのち、信号処理
回路16において閾値の設定,信号の比較などが行なわ
れる。その後、演算回路20においてエネルギー幅,差
などを算出したのちD/A変換器17によりアナログ信
号に変換されて映像増幅器24を駆動しCRT26のグ
リッドを励振する。さらに、スイッチ22を切り替えて
映像信号をCRT偏向増幅器23に入力して増幅し、偏
向コイル25に加えることによりY変調像を得ることが
出来る。一方、走査信号発生器21で発生された走査信
号は増幅器27で増幅されて偏向コイル12に供給され
、電子線1をX−Y二次元走査する。[0009] The spectroscopic grid also includes a signal generation circuit 1.
A signal obtained by controlling the power supply 28 via the D/A converter 17 is added to the output of the power supply 9. After the secondary electronic signals stored in the memory 15 are read out, the signal processing circuit 16 sets a threshold value, compares the signals, and the like. Thereafter, the arithmetic circuit 20 calculates the energy width, the difference, etc., and the signal is converted into an analog signal by the D/A converter 17, which drives the video amplifier 24 and excites the grid of the CRT 26. Furthermore, by switching the switch 22, inputting the video signal to the CRT deflection amplifier 23, amplifying it, and applying it to the deflection coil 25, a Y-modulated image can be obtained. On the other hand, the scanning signal generated by the scanning signal generator 21 is amplified by the amplifier 27 and supplied to the deflection coil 12, thereby scanning the electron beam 1 two-dimensionally in the X-Y direction.
【0010】図3は二次電子のエネルギー幅および差を
検出する方法を説明するためのものである。左図では信
号10と11は上限,下限レベルが合っていないが、補
正後は右図のように処理されるため閾値31を設けてエ
ネルギー差Dを算出できる。また、閾値29及び30を
設けてエネルギー幅Wを得ることができる。FIG. 3 is for explaining a method of detecting the energy width and difference of secondary electrons. In the left diagram, the upper and lower limit levels of signals 10 and 11 do not match, but after correction, they are processed as shown in the right diagram, so the energy difference D can be calculated by setting a threshold 31. Further, the energy width W can be obtained by providing the threshold values 29 and 30.
【0011】図4はX,Y走査信号,分光グリッド信号
および映像信号のタイミングを示すものである。X走査
信号32及びY走査信号33は電子線をX−Y二次元走
査するためのものである。分光グリッド信号はX走査信
号に比べて周期が短く、その一周期ごとに映像信号35
が出力され、すなわち分光グリッド信号一周期毎に一画
素を形成する。FIG. 4 shows the timing of the X and Y scanning signals, the spectral grid signal and the video signal. The X scanning signal 32 and the Y scanning signal 33 are for scanning the electron beam two-dimensionally in the X-Y direction. The period of the spectral grid signal is shorter than that of the
is output, that is, one pixel is formed for each period of the spectral grid signal.
【0012】0012
【発明の効果】本発明によれば、二次電子のエネルギー
幅や差を情報媒体として形像できるため、試料表面の微
小領域の電位,微小磁界,微小電界などの分布状態を容
易に知ることができる。[Effects of the Invention] According to the present invention, since the energy width and difference of secondary electrons can be visualized as an information medium, it is possible to easily know the distribution state of electric potential, minute magnetic field, minute electric field, etc. in minute areas on the sample surface. Can be done.
【図1】本発明の原理説明図である。FIG. 1 is a diagram explaining the principle of the present invention.
【図2】本発明の一実施例の装置構成図である。FIG. 2 is a diagram showing the configuration of an apparatus according to an embodiment of the present invention.
【図3】エネルギー幅及び差を算出する方法の説明図で
ある。FIG. 3 is an explanatory diagram of a method of calculating energy width and difference.
【図4】各種信号のタイミングを説明するための図であ
る。FIG. 4 is a diagram for explaining the timing of various signals.
1…電子線、2…二次電子、3…分光グリッド、4…電
圧調整器、5…電源、6…試料、7…引出及びバッファ
電極、8…電源、10および11…二次電子信号、12
…偏向コイル、13…対物レンズ、14…A/D変換器
、15…メモリ、16…信号処理回路、17…D/A変
換器、18…レベル補正回路、19…分析グリッド信号
発生器、20…演算回路、21…走査信号発生器、22
…スイッチ、23…偏向増幅器、24…映像増幅器、2
5…CRT偏向コイル、26…CRT、27…偏向増幅
器、28…分光グリッド制御電源、29〜31…閾値、
32…X走査信号、33…Y走査信号、34…分光グリ
ッド信号、35…映像信号、D…エネルギー差、W…エ
ネルギー幅。DESCRIPTION OF SYMBOLS 1... Electron beam, 2... Secondary electron, 3... Spectroscopic grid, 4... Voltage regulator, 5... Power supply, 6... Sample, 7... Extraction and buffer electrode, 8... Power supply, 10 and 11... Secondary electron signal, 12
... Deflection coil, 13... Objective lens, 14... A/D converter, 15... Memory, 16... Signal processing circuit, 17... D/A converter, 18... Level correction circuit, 19... Analysis grid signal generator, 20 ...Arithmetic circuit, 21...Scanning signal generator, 22
...Switch, 23...Deflection amplifier, 24...Video amplifier, 2
5...CRT deflection coil, 26...CRT, 27...deflection amplifier, 28...spectral grid control power supply, 29-31...threshold value,
32...X scanning signal, 33...Y scanning signal, 34...spectral grid signal, 35...video signal, D...energy difference, W...energy width.
Claims (2)
差などを検出し、これらの情報を輝度変調信号などに変
換して形像することを特徴とする走査電子顕微鏡。1. A scanning electron microscope characterized by detecting the energy width, energy difference, etc. of a secondary electron signal, and converting this information into a brightness modulation signal or the like to form an image.
レベルおよび下限レベルを、あらかじめ設定された任意
の一定値に自動的に調節する機能を備えたことを特徴と
する走査電子顕微鏡。2. A scanning electron microscope characterized by having a function of automatically adjusting an upper limit level and a lower limit level of an energy-separated secondary electron signal to arbitrary constant values set in advance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11015691A JP3153262B2 (en) | 1991-05-15 | 1991-05-15 | Scanning electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11015691A JP3153262B2 (en) | 1991-05-15 | 1991-05-15 | Scanning electron microscope |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04337234A true JPH04337234A (en) | 1992-11-25 |
JP3153262B2 JP3153262B2 (en) | 2001-04-03 |
Family
ID=14528475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11015691A Expired - Fee Related JP3153262B2 (en) | 1991-05-15 | 1991-05-15 | Scanning electron microscope |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3153262B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014089953A (en) * | 2012-10-25 | 2014-05-15 | Fei Co | Retarding field analyzer integral with particle beam column |
-
1991
- 1991-05-15 JP JP11015691A patent/JP3153262B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014089953A (en) * | 2012-10-25 | 2014-05-15 | Fei Co | Retarding field analyzer integral with particle beam column |
Also Published As
Publication number | Publication date |
---|---|
JP3153262B2 (en) | 2001-04-03 |
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