JPH04334042A - Semiconductor chip and probe device for measuring semiconductor chip property - Google Patents

Abstract

PURPOSE:To make it possible to measure a semiconductor circuit in parallel. CONSTITUTION:A pad 111a required for the measurement of a semiconductor circuit 102 is laid out so as to face one side of a semiconductor chip 101 whereas measurement probes 112 to 115 are placed in contact in parallel (Fig. 1(b)), thereby measuring four semiconductor chips in parallel. This construction makes it possible to reduce the time of P/W of the semiconductor chip substantially in inverse proportion to the number of chips to be measured in parallel.

Description

[Detailed description of the invention]

0001

[Industrial Field of Application] The present invention relates to a semiconductor chip equipped with a semiconductor integrated circuit whose characteristics are to be measured in parallel;
The present invention relates to a probe device used to measure the characteristics of the semiconductor chip.

0002

[Prior Art] Non-volatile semiconductor memory integrated circuits have a structure in which a semiconductor integrated circuit mounted on a semiconductor chip electrically writes data and erases the data by irradiating ultraviolet light, or In the case of a non-volatile semiconductor memory integrated circuit with an electrical structure, writing per byte,
Or, since the erasing time requires several milliseconds,
A test time of several seconds is required with a storage capacity of 1 kilobyte. Therefore, by selecting only semiconductor memory integrated circuits between semiconductor chips and performing parallel measurements on the semiconductor memory integrated circuits in parallel, measurement work at the time of shipment can be carried out efficiently, and as a result, semiconductor chips This is an important point for manufacturing at low cost.

By the way, there is no problem when the semiconductor memory integrated circuit is mounted as a single item on a semiconductor chip, but when only the semiconductor memory integrated circuit is mounted as a single item on a semiconductor chip used for a microcomputer, etc. There are few semiconductor integrated circuits, and they are often mounted together with other semiconductor integrated circuits. Conventionally, when pads of semiconductor memory integrated circuits are mixed as described above, pads of semiconductor memory integrated circuits have not been collected and arranged at specific positions on a semiconductor chip.

Therefore, all the pads 302 on the semiconductor chip 301 shown in FIG. 3(a) are brought into contact with measurement probes 304, 305, 306, 307 as shown in FIG. 3(b), and the probes 304, 305, The same signal is given to 306 and 307 to enable measurement.

[0005]

[Problem to be Solved by the Invention] Therefore, it is necessary to select only the semiconductor memory integrated circuits between semiconductor chips used in conventional microcomputers, etc., and perform parallel measurements on the semiconductor memory integrated circuits of a plurality of semiconductor chips in parallel. There was a problem in that this type of semiconductor chip could not be manufactured at low cost, resulting in inefficient measurement work.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor chip and a probe device for measuring semiconductor chip characteristics that solve the above-mentioned problems.

[0007]

[Means for Solving the Problems] In order to achieve the above object, a semiconductor chip according to the present invention includes a semiconductor integrated circuit whose characteristics are to be measured in parallel, and other semiconductor integrated circuits, etc. BACKGROUND ART A semiconductor integrated circuit, which is a semiconductor chip and whose characteristics are to be measured, has pads necessary for measurement, which are brought into contact with a measurement probe, arranged along one side of the semiconductor chip.

The semiconductor integrated circuit to be measured is a non-volatile semiconductor memory integrated circuit having a structure in which data is written electrically and the data is erased by irradiation with ultraviolet rays, or a non-volatile semiconductor memory integrated circuit in which data is written and erased electrically. It is a non-volatile semiconductor integrated circuit with a structure that

Further, in the probe device for measuring semiconductor chip characteristics according to the present invention, the probe device mounted on the semiconductor chip,
A probe device that brings a measurement probe into contact with a pad necessary for measuring a semiconductor integrated circuit whose characteristics require parallel measurement, and sends and receives power or signals necessary for the operation of the semiconductor chip through the measurement probe, The pads that the measurement probes of the semiconductor integrated circuit to be measured come into contact with are arranged along one side of the semiconductor chip, and the measurement probes are arranged corresponding to the rows of pads, and at least Two sets of measurement probes are provided, and the two sets of measurement probes are positioned and arranged in the arrangement direction of adjacent semiconductor chips.

0010

[Operation] The semiconductor integrated circuit that is mounted on a semiconductor chip and whose characteristics are to be measured in parallel has pads that the measurement probe comes into contact with are arranged along one side of the semiconductor chip.
On the other hand, at least two sets of measurement probes of the probe device are arranged corresponding to the pad rows. Therefore, parallel measurement of semiconductor integrated circuits between adjacent semiconductor chips is carried out by contacting two sets of measurement probes in parallel to the pads necessary for measuring the semiconductor integrated circuit to be measured. It becomes possible to perform measurements.

[0011]

[Embodiments] Hereinafter, embodiments of the present invention will be explained with reference to the drawings.

(Embodiment 1) FIG. 1(a) is a plan view of a semiconductor chip showing Embodiment 1 of the present invention, and FIG. 1(b) is a diagram showing a state of parallel measurement.

In the figure, a semiconductor chip 1 according to the present invention is shown.
01 is a semiconductor integrated circuit 102 whose characteristics need to be measured in parallel, and other semiconductor integrated circuits 103 and 10.
4, 105, and 106 are installed in a mixed manner, and connecting wires 107 to 110 are provided between them.

Furthermore, the semiconductor integrated circuit 1 whose characteristics are to be measured
Pad 111a for transmitting and receiving power or signals to and from 02
, 111a, 111a, . . . are arranged along the long side 101a of the semiconductor chip 101. In addition, pads 111b, 111b..., 111c, 111 transmit and receive power or signals to and from the semiconductor integrated circuits 103, 104, 105.
c..., 111d, 111d... are arranged along the long side 101b or the short sides 101c, 101d of the semiconductor chip 101.

Semiconductor integrated circuit 102 whose characteristics are to be measured
The non-volatile semiconductor memory integrated circuit has a structure in which data is written electrically and the data is erased by irradiation with ultraviolet rays, or the non-volatile semiconductor memory integrated circuit has a structure in which data is written and erased electrically.

Further, the probe device for measuring semiconductor chip characteristics according to the present invention can be used to measure the characteristics of a semiconductor integrated circuit 10.
No. 2 pad 111a or semiconductor integrated circuit 103, 10
Measurement probes 112, 113, 114, 115 to be brought into contact with pads 111b, 111c, 111d of 4,105
At least two or more sets (four sets in the embodiment) of the pad 11
1a or 111b, 111e, 111d, and these sets of measurement probes 112, 113, 1
14 and 115 are positioned and arranged in the arrangement direction of adjacent semiconductor chips 101.

FIG. 1(b) shows a state in which the semiconductor chip 101 of FIG. 1(a) is placed on a semiconductor substrate, and a measurement probe of a probe device for measuring characteristics is in contact with a pad necessary for measurement. It is something. This embodiment shows a case where four semiconductor chips 101 are measured in parallel. In the example shown in FIG. 1(b), the semiconductor integrated circuits 102 shown in FIG. 1(a) between adjacent semiconductor chips 101 are measured in parallel. In FIG. 1(a), the power supply line and ground line on the semiconductor chip are not particularly drawn, but they can be connected not only to the semiconductor integrated circuit 102 being measured in parallel but also to other semiconductor integrated circuits as necessary. need to be supplied. In addition, the probe pad that provides the power supply voltage and ground voltage is
There may be more than one if necessary, and in addition, Figure 1 (b
), among the contact pads for the probe, there may be pads dedicated to measurement that are not bonded in a subsequent process. In FIG. 1(b), measurement probes 113, 114, 11
The same signal is input to 5 and 116. Figure 1 (
A and B shown in b) are each equal to the length of the side of the semiconductor chip 101 shown in FIG. 1(a).

(Example 2) FIGS. 2(a), (b), (c)
FIG. 2 is a diagram showing Example 2 of the present invention.

In this embodiment, as shown in FIG. 2(a),
On the semiconductor chip 201 are semiconductor integrated circuits 202 to 2.
06, pads 211a, 211b, 211c, and 211d are provided on the wirings 207 to 210 that interconnect them, and around the chip, pads 211a, 211b, 211c, and 211d are provided on the long sides 201a and 201b of the chip 201 or on the short sides 201 and 211d, which are in contact with measurement probes.
c, along 201d. Also, Figure 2(b)
, (c), the measurement probe 2 of the probe device
12-215, 218-220 are pads 211a, 2
11b, 211c, and 211d. FIGS. 2(b) and 2(c) show a state in which the semiconductor chip 201 is placed on a semiconductor substrate and a measurement probe of a probe device for measuring characteristics is in contact with a pad.

This embodiment shows a case where four semiconductor chips 201 are measured in parallel. In the example of FIG. 2(b), the semiconductor integrated circuits 202 of FIG. 2(a) are measured in parallel. In the example of FIG. 2(c), the semiconductor integrated circuits 204 and 205 of FIG. 2(a) are measured in parallel. In this embodiment, by arranging the measurement pads of a plurality of semiconductor integrated circuits on different sides of a semiconductor chip and preparing different probe devices, it is possible to measure a plurality of semiconductor integrated circuits in parallel. As shown in FIG. 2C, some pads facing one side of the semiconductor chip may not be used for parallel measurement.

In FIGS. 2(b) and 2(c), measurement probes 213, 214, 215, 216 and 218, 219
, 220, and 221 are connected to the same signal line, respectively.

[0022]

Effects of the Invention As explained above, in the present invention, the pads that the measurement probes of semiconductor integrated circuits that perform parallel measurements come into contact with are arranged so as to face one side of the semiconductor chip. When measuring n integrated circuits in parallel, the measurement time can be reduced to 1/n, and is particularly effective for measuring the characteristics of non-volatile semiconductor memory integrated circuits whose storage contents are electrically variable. be.

[Brief explanation of drawings]

FIG. 1(a) is a layout diagram of a semiconductor integrated circuit according to a first embodiment of the present invention, and FIG. 1(b) is a plan view of a state in which a probe device is brought into contact with the semiconductor integrated circuit.

FIG. 2(a) is a layout diagram of a semiconductor integrated circuit according to a second embodiment of the present invention, and FIGS. 2(b) and 2(c) are plan views of a state in which a probe device is brought into contact with the semiconductor integrated circuit.

FIG. 3(a) is a layout diagram of a conventional semiconductor integrated circuit, and FIG. 3(b) is a plan view of a state in which a probe device is brought into contact with the semiconductor integrated circuit.

[Explanation of symbols]

101, 201 semiconductor chips 102-106, 202-206 semiconductor integrated circuit 1
11a, 111b, 111c, 111d, 211, 21
1a, 211b, 211c, 211d Pads 112-115, 212-215, 218-220 with which the measuring probe comes into contact
measurement probe

Claims (3)

[Claims] [Claim 1] A semiconductor chip consisting of a semiconductor integrated circuit whose characteristics are to be measured in parallel and other semiconductor integrated circuits, etc., in which the semiconductor integrated circuit whose characteristics are to be measured is brought into contact with a measurement probe. A semiconductor chip characterized in that pads necessary for measurement are arranged along one side of the semiconductor chip. 2. The semiconductor integrated circuit whose characteristics are to be measured is a non-volatile semiconductor memory integrated circuit having a structure in which data is written electrically and the data is erased by irradiation with ultraviolet light;
2. The semiconductor chip according to claim 1, wherein the semiconductor chip is a nonvolatile semiconductor integrated circuit having a structure in which writing and erasing of data is performed electrically. 3. A measurement probe is brought into contact with a pad necessary for measuring a semiconductor integrated circuit mounted on a semiconductor chip and whose characteristics need to be measured in parallel, and power or signals necessary for the operation of the semiconductor chip are measured through the measurement probe. The pads that the measurement probes of the semiconductor integrated circuit whose characteristics are to be measured come into contact with are arranged along one side of the semiconductor chip, and the measurement probes are arranged along one side of the semiconductor chip. A probe for measuring characteristics of a semiconductor chip, comprising at least two sets of probes arranged in a corresponding manner, the two sets of measurement probes being positioned and arranged in the arrangement direction of adjacent semiconductor chips. Device.