JPH04326787A - Plane luminescent semiconductor laser device - Google Patents
Plane luminescent semiconductor laser deviceInfo
- Publication number
- JPH04326787A JPH04326787A JP9772591A JP9772591A JPH04326787A JP H04326787 A JPH04326787 A JP H04326787A JP 9772591 A JP9772591 A JP 9772591A JP 9772591 A JP9772591 A JP 9772591A JP H04326787 A JPH04326787 A JP H04326787A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- laser device
- semiconductor laser
- active layer
- reflecting mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims abstract description 5
- 239000007924 injection Substances 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 101001052394 Homo sapiens [F-actin]-monooxygenase MICAL1 Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 102100024306 [F-actin]-monooxygenase MICAL1 Human genes 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は面発光半導体レ−ザ装置
に関し、基板面と垂直な縦方向にキャビティを有する面
発光半導体レ−ザ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting semiconductor laser device, and more particularly to a surface emitting semiconductor laser device having a cavity in a vertical direction perpendicular to a substrate surface.
【０００２】0002
【従来の技術】周知の如く、面発光半導体レ−ザは、水
平共振器半導体レ−ザに比べ単一波長安定性や集積化の
点で優れている。また、活性領域を小さくすることでし
きい値の低下も達成しうる。従来、活性領域を小さくす
るために図４に示す構造の面発光半導体レ−ザが提案さ
れている（従来例１；応用物理，第６０巻，第１号（１
９９１ 年），ｐ１０頁）。2. Description of the Related Art As is well known, surface emitting semiconductor lasers are superior to horizontal cavity semiconductor lasers in terms of single wavelength stability and integration. Further, by making the active region smaller, a lower threshold value can also be achieved. Conventionally, a surface-emitting semiconductor laser having the structure shown in FIG. 4 has been proposed in order to reduce the active region (Conventional Example 1; Applied Physics, Vol. 60, No. 1 (1)
(991), p. 10).
【０００３】図中の１は、ｎ型のＧａＡｓ基板である。
この基板１上には、２８．５周期のＡＩＡｓ／ＧａＡｓ
Ｓｉド−プ半導体多層膜反射鏡（以下、第１反射鏡と呼
ぶ）２が一部を突出させた状態で設けられている。この
反射鏡２の突出部分上には、厚さ８ｎｍの（Ｉｎ０．２
Ｇａ０．８ Ａｓ量子井戸層３、２３周期のＡＩＡｓ
／ＧａＡｓＢｅド−プ半導体多層膜反射鏡（以下、第２
反射鏡と呼ぶ）４、１／４波長厚ＧａＡｓ層５が順次設
けられている。前記第１反射鏡２の突出していない部分
上には、ポリイミドからなる絶縁層６が設けられている
。前記ＧａＡｓ層５及び前記絶縁層６上には、ｐ型電極
７が形成されている。前記基板１の裏面には、ｎ型電極
８が形成されている。なお、図中の９は柱状部分、１０
はレ−ザ光を示す。1 in the figure is an n-type GaAs substrate. On this substrate 1, AIAs/GaAs with a period of 28.5
A Si-doped semiconductor multilayer film reflecting mirror (hereinafter referred to as a first reflecting mirror) 2 is provided with a portion thereof protruding. On the protruding part of this reflecting mirror 2, there is a (In0.2
Ga0.8 As quantum well layer 3, AIAs with 23 periods
/GaAsBe-doped semiconductor multilayer film reflector (hereinafter referred to as the second
A 4.1/4 wavelength thick GaAs layer 5 (referred to as a reflector) is successively provided. An insulating layer 6 made of polyimide is provided on the non-protruding portion of the first reflecting mirror 2. A p-type electrode 7 is formed on the GaAs layer 5 and the insulating layer 6. An n-type electrode 8 is formed on the back surface of the substrate 1. In addition, 9 in the figure is a columnar part, 10
indicates laser light.
【０００４】こうした構成の半導体レ−ザ装置において
、活性領域が柱状部分９の中にあり、キャリアの閉じ込
め効果が高い。従って、しきい値を小さくすることがで
きる。In the semiconductor laser device having such a structure, the active region is located within the columnar portion 9, and the effect of confining carriers is high. Therefore, the threshold value can be reduced.
【０００５】図５は、他の従来の面発光半導体レ−ザ装
置の例を示す（従来例２；ＣＬＥＯ１９９０，ＴＥＣＨ
ＮＩＣＡＬ ＤＩＧＥＳＴ ＳＥＲＩＥＳ，ＶＯＬＵＭ
Ｅ，５０５頁）。図中の１１は、ｎ型の半導体多層膜反
射鏡（以下、ｎ型反射鏡と呼ぶ）である。この反射鏡１
１上には、活性層１２、絶縁層１３が形成されている。
前記絶縁層１３はプロトンの多重イオン打ち込みで形成
されており、絶縁層１３には前記活性層１２を露出させ
るような階段状の開口部１２ａが形成されている。前記
開口部１２ａには、ｐ型の半導体多層膜反射鏡（以下、
ｐ型反射鏡と呼ぶ）１４が設けられている。前記ｐ型反
射鏡１４上の所定の位置にはＡｕからなる上部反射鏡１
５が設けられ、更にｐ型電極１６が設けられている。な
お、ｎ型電極の記載は省略されている。FIG. 5 shows an example of another conventional surface-emitting semiconductor laser device (Conventional Example 2; CLEO1990, TECH
NICAL DIGEST SERIES, VOLUM
E, p. 505). 11 in the figure is an n-type semiconductor multilayer film reflecting mirror (hereinafter referred to as an n-type reflecting mirror). This reflector 1
1, an active layer 12 and an insulating layer 13 are formed. The insulating layer 13 is formed by multiple ion implantation of protons, and a stepped opening 12a is formed in the insulating layer 13 to expose the active layer 12. The opening 12a is provided with a p-type semiconductor multilayer reflective mirror (hereinafter referred to as
A p-type reflector) 14 is provided. At a predetermined position on the p-type reflector 14, there is an upper reflector 1 made of Au.
5 is provided, and a p-type electrode 16 is further provided. Note that the description of the n-type electrode is omitted.
【０００６】図５の構成のレ−ザ装置においては、比較
的広いｐ型電極１６から注入された電流が活性層１２に
至る直前で絶縁層１３により狭められる。従って、活性
層１２を埋め込んでいなくても電流狭窄が達成され、し
きい値を下げることができる。また、電流は最終的に狭
窄されるまで広い通り道を通るので、直列抵抗が低く、
かつ熱抵抗も近いという利点を有する。In the laser device having the structure shown in FIG. 5, the current injected from the relatively wide p-type electrode 16 is narrowed by the insulating layer 13 just before it reaches the active layer 12. Therefore, current confinement can be achieved even without burying the active layer 12, and the threshold value can be lowered. Also, since the current passes through a wide path until it is finally constricted, the series resistance is low.
It also has the advantage of having similar thermal resistance.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記従
来例には次に述べる問題点を有する。However, the above conventional example has the following problems.
【０００８】（１） 従来例１；第１反射鏡２の反射率
を上げるには積層数を多く、つまり柱の高さを高くしな
ければならない。これは、多層膜中に多数のヘテロ障壁
があることから、注入される電流の直列抵抗及び熱抵抗
を大きくしてしまうという欠点を持つ。(1) Conventional Example 1: In order to increase the reflectance of the first reflecting mirror 2, it is necessary to increase the number of laminated layers, that is, to increase the height of the pillars. This has the disadvantage of increasing the series resistance and thermal resistance of the injected current due to the large number of heterobarriers in the multilayer film.
【０００９】（２） 従来例２；注入された電流は当初
広い通りを通るとはいえ、同様に多数のヘテロ障壁を通
過しなければならず、直列抵抗及び熱抵抗の低減は十分
でないという欠点を持つ。(2) Conventional Example 2: Although the injected current initially passes through a wide path, it also has to pass through a large number of heterobarriers, and the reduction in series resistance and thermal resistance is not sufficient. have.
【００１０】本発明は上記事情を鑑みてなされたもので
、半導体多層膜反射鏡を柱状に加工した側面にも電極を
設けることにより、しきい値が低く、かつ直列抵抗と熱
抵抗の小さい面発光半導体レ−ザ装置を提供することを
目的とする。The present invention has been made in view of the above-mentioned circumstances, and by providing electrodes also on the side surfaces of a semiconductor multilayer mirror processed into a columnar shape, a surface with a low threshold value and low series resistance and low thermal resistance can be obtained. An object of the present invention is to provide a light emitting semiconductor laser device.
【００１１】[0011]
【課題を解決するための手段】本発明は、第１導電型の
基板と、前記基板上に形成された第１導電型の半導体多
層膜反射鏡と、前記反射鏡上に形成された量子井戸を構
成する活性層と、前記活性層上に形成され、前記基板主
面と垂直な方向に柱状に加工され部分を有する第２導電
型の半導体多層膜反射鏡と、この反射鏡の柱状部分の少
なくとも側面に電流注入用電極とを具備することを特徴
とする面発光半導体レ−ザ装置である。本発明に係る面
発光半導体レ−ザ装置は、具体的には図２に示す通りで
ある。図中の２１は基板である。この基板２１上には、
活性層２２、半導体多層膜反射鏡２３が設けられている
。ここで、前記反射鏡２３の一部は、柱状に突出してい
る。前記反射鏡２３の柱状部２３ａを除く部分上には、
絶縁膜２４が設けられている。前記柱状部２３ａ上には
、第１電極２５が設けられている。ここで、第１電極は
、金属の選択的化学気相堆積により形成する。前記基板
２１の裏面側には、第２電極２６が設けられている。な
お、図中の２７はレ−ザ光である。Means for Solving the Problems The present invention provides a substrate of a first conductivity type, a semiconductor multilayer film reflecting mirror of a first conductivity type formed on the substrate, and a quantum well formed on the reflecting mirror. a second conductivity type semiconductor multilayer reflective mirror formed on the active layer and having a columnar portion in a direction perpendicular to the main surface of the substrate; This is a surface emitting semiconductor laser device characterized in that it is provided with a current injection electrode on at least a side surface. The surface emitting semiconductor laser device according to the present invention is specifically shown in FIG. 21 in the figure is a substrate. On this board 21,
An active layer 22 and a semiconductor multilayer film reflecting mirror 23 are provided. Here, a portion of the reflecting mirror 23 protrudes in a columnar shape. On the portion of the reflecting mirror 23 excluding the columnar portion 23a,
An insulating film 24 is provided. A first electrode 25 is provided on the columnar portion 23a. Here, the first electrode is formed by selective chemical vapor deposition of metal. A second electrode 26 is provided on the back side of the substrate 21. Note that 27 in the figure is a laser beam.
【００１２】0012
【作用】本発明の面発光半導体レ−ザ装置において、活
性層は閉じ込められていないが、上部の反射鏡が活性層
のすぐ近くまで柱状に加工されているので、電流の狭窄
が起こり、しきい値を下げることができる。[Function] In the surface emitting semiconductor laser device of the present invention, the active layer is not confined, but since the upper reflecting mirror is processed into a columnar shape close to the active layer, current constriction occurs and the active layer is not confined. You can lower the threshold.
【００１３】また、柱状部の上部だけでなく値付け部か
ら最も大量に注入され、すぐに活性層に到達することが
できる。この工程において、通過するべきヘテロ障壁の
数が少なく、また経路長さそのものも短くなるので、直
列抵抗及び熱抵抗を大幅に小さくすることができる。[0013] Furthermore, the largest amount of injected not only from the upper part of the columnar part but also from the pricing part can reach the active layer immediately. In this process, the number of heterobarriers to be passed through is small, and the path length itself is also shortened, so series resistance and thermal resistance can be significantly reduced.
【００１４】更に、電流注入用電極を金属の選択的化学
気相堆積により形成するので、柱状部の上面及び側面に
のみ自己整合的に電極が形成され、製造を容易にするこ
とができる。Furthermore, since the current injection electrode is formed by selective chemical vapor deposition of metal, the electrode is formed in a self-aligned manner only on the top and side surfaces of the columnar part, which facilitates manufacturing.
【００１５】[0015]
【実施例】以下、本発明の一実施例に係る面発光半導体
レ−ザ装置を図１を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A surface emitting semiconductor laser device according to an embodiment of the present invention will be described below with reference to FIG.
【００１６】図中の３１は、ｎ型のＧａＡｓ基板（キャ
リア濃度２×１０１８ｃｍ−３，厚さ１００μｍ）であ
る。前記基板３１の裏面には、穴３１ａが設けられてい
る。前記基板３１上には、２０周期のＡＩＡｓ／ＡＩｘ
Ｇａ１−ｙ Ａｓからなるｎ型半導体多層膜反射鏡３
２（以下、ｎ型反射鏡と呼ぶ）が設けられている。前記
反射鏡３２上には、Ｉｎ０．２ Ｇａ０．８ Ａｓ量子
井戸となっている厚さ８ｎｍの活性層３３が設けられて
いる。前記活性層３３上には、２０周期のＡＩＡｓ／Ａ
Ｉｘ Ｇａ１−ｙ Ａｓからなるｐ型半導体多層膜反射
鏡３４（以下、ｐ型反射鏡と呼ぶ）が設けられている。
ここで、前記反射鏡３４の一部は、柱状に突出している
。前記反射鏡３４の柱状部３４ａを除く部分上には、Ｓ
ＯＧ（スピンオングラス）からなる厚さ２００ｎｍの第
１絶縁膜３５が設けられている。前記柱状部３４ａ上面
及び側面には、Ｗ（タングステン）からなるｐ型電極３
６が設けられている。前記第１絶縁膜３５上には、ＳＯ
Ｇからなる第２絶縁膜３７が前記柱状部３４ａ上のｐ型
電極３６の上面と同じ高さになるように設けられている
。前記基板３１の裏面には、ｎ型電極３８が設けられて
いる。なお、図中の３９は、基板３１の裏面に設けた穴
３１ａから出射されるレ−ザ光である。31 in the figure is an n-type GaAs substrate (carrier concentration 2×10 18 cm −3 , thickness 100 μm). A hole 31a is provided on the back surface of the substrate 31. On the substrate 31, 20 periods of AIAs/AIx
N-type semiconductor multilayer film reflecting mirror 3 made of Ga1-yAs
2 (hereinafter referred to as an n-type reflecting mirror) is provided. An active layer 33 with a thickness of 8 nm is provided on the reflecting mirror 32 and is an In0.2 Ga0.8 As quantum well. On the active layer 33, 20 periods of AIAs/A
A p-type semiconductor multilayer film reflecting mirror 34 (hereinafter referred to as a p-type reflecting mirror) made of Ix Ga1-y As is provided. Here, a portion of the reflecting mirror 34 protrudes in a columnar shape. On the portion of the reflecting mirror 34 other than the columnar portion 34a, there is an S
A first insulating film 35 made of OG (spin-on glass) and having a thickness of 200 nm is provided. A p-type electrode 3 made of W (tungsten) is provided on the top and side surfaces of the columnar portion 34a.
6 is provided. On the first insulating film 35, SO
A second insulating film 37 made of G is provided at the same height as the upper surface of the p-type electrode 36 on the columnar portion 34a. An n-type electrode 38 is provided on the back surface of the substrate 31. Note that 39 in the figure is a laser beam emitted from a hole 31a provided on the back surface of the substrate 31.
【００１７】こうした構成のレ−ザ装置において、ｐ型
電極３６から注入された電流は、その大部分が電極の最
大部、つまり柱状部３４ａの付け値付近からｐ型反射膜
３４中に入る。注入された電流は下に向かい、活性層３
３を通過した後、広がってｎ型電極３８に至る。反射率
を上げるために、反射鏡の層数を増し、柱状部３４ａの
高さを増しても、電流は常にその付け値部分から注入さ
れるので、活性層３３に至るまでの電気抵抗を小さいま
ま保つことができる。これは、同時に活性層３３で発生
した熱をｐ型電極３６へ逃がすのを容易にする。つまり
、熱抵抗を小さくできる。In the laser device having such a configuration, most of the current injected from the p-type electrode 36 enters the p-type reflective film 34 from the maximum part of the electrode, that is, near the peak of the columnar part 34a. The injected current goes downward and the active layer 3
3, it spreads out and reaches the n-type electrode 38. In order to increase the reflectance, even if the number of layers of the reflective mirror is increased and the height of the columnar portion 34a is increased, the current is always injected from the bid point, so the electrical resistance up to the active layer 33 is reduced. You can keep it as it is. This also facilitates the release of heat generated in the active layer 33 to the p-type electrode 36. In other words, thermal resistance can be reduced.
【００１８】次に、上記構成のレ−ザ装置の製造方法に
ついて、図３Ａ）〜（Ｄ）を参照して説明する。Next, a method of manufacturing the laser device having the above structure will be explained with reference to FIGS. 3A to 3D.
【００１９】（１） まず、ＧａＡｓ基板３１上にエピ
タキシャル成長によりｎ型反射膜３２、活性層３３及び
ｐ型反射鏡３４を形成した後、通常のリソグラフィ工程
とエッチングにより、ＳｉＯ２ 等からなるマスク材３
９を用いて前記ｐ型反射鏡３４を所定の厚みまでエッチ
ングし、柱状部３４ａを形成した（図３（Ａ））。(1) First, after forming an n-type reflective film 32, an active layer 33, and a p-type reflective mirror 34 by epitaxial growth on a GaAs substrate 31, a mask material 3 made of SiO2 or the like is formed by a normal lithography process and etching.
9 was used to etch the p-type reflective mirror 34 to a predetermined thickness to form columnar portions 34a (FIG. 3(A)).
【００２０】（２） 次に、前記マスク材４０を除去し
た。つづいて、ＳＯＧを全面に塗布，ベ−クした後、Ｈ
Ｆ系溶液で軽くエッチングし、柱状部３４ａの上面及び
側面にＳＯＧが残らないようにＳＯＧからなる第１絶縁
膜３５を形成した（図３（Ｂ））。(2) Next, the mask material 40 was removed. Next, after applying SOG to the entire surface and baking,
A first insulating film 35 made of SOG was formed by lightly etching with an F-based solution so that no SOG remained on the top and side surfaces of the columnar portion 34a (FIG. 3(B)).
【００２１】（３） 次に、タングステンの選択ＣＶＤ
堆積により、半導体が電位した部分（露出した柱状部３
４ａ）にのみｐ型電極３６を形成した（図３（Ｃ））。(3) Next, selective CVD of tungsten
The part where the semiconductor has a potential due to the deposition (exposed columnar part 3
A p-type electrode 36 was formed only in 4a) (FIG. 3(C)).
【００２２】（４） 次に、全面にＳＯＧを塗布，ベ−
クするかあるいはＳｉＯ２ のバイアススパッタにより
、第２絶縁膜３７を形成した。つづいて、裏面からＧａ
Ａｓ基板３１を研磨し、全体の厚さを１００μｍとした
ところで、リフトオフ法によりＡｕＧｅ／Ｎｉ／Ａｕか
らなるｎ型電極３８を形成した。次いで、前記ｎ型電極
３８をマスクとしてＧａＡｓ基板３１をエッチングして
穴３１ａを開け、面発光半導体レ−ザ装置を製造した（
図３（Ｄ））。(4) Next, apply SOG to the entire surface and base
A second insulating film 37 was formed by drying or bias sputtering of SiO2. Next, Ga from the back side
After polishing the As substrate 31 to a total thickness of 100 μm, an n-type electrode 38 made of AuGe/Ni/Au was formed by a lift-off method. Next, using the n-type electrode 38 as a mask, the GaAs substrate 31 was etched to form a hole 31a, and a surface-emitting semiconductor laser device was manufactured.
Figure 3(D)).
【００２３】しかして、上記実施例に係る面発光レ−ザ
装置によれば、ｐ型半導体多層膜反射鏡３４の一部にＧ
ａＡｓ基板３１の主面に垂直な方向に柱状部３４ａを設
け、この柱状部３４ａの側面にもｐ型電極３６を設けた
構成になっているため、従来と比べ、しきい値が低く、
かつ直列抵抗と熱抵抗を小さくできる。According to the surface emitting laser device according to the above embodiment, a part of the p-type semiconductor multilayer film reflecting mirror 34 has a G
Since the columnar part 34a is provided in the direction perpendicular to the main surface of the aAs substrate 31, and the p-type electrode 36 is also provided on the side surface of the columnar part 34a, the threshold value is lower than that of the conventional one.
Moreover, series resistance and thermal resistance can be reduced.
【００２４】また、上記方法のように、ｐ型電極３６を
タングステンの選択ＣＶＤ法により形成するため、柱状
部３４ａの側面への電極形成を自己整合的に行うことが
できかつ容易である。Furthermore, as in the above method, since the p-type electrode 36 is formed by the tungsten selective CVD method, the electrode can be easily formed on the side surface of the columnar portion 34a in a self-aligned manner.
【００２５】なお、上記実施例では、ＡＩＧａＡｓ系材
料を用いた場合について述べたが、これに限らず、他の
材料系を用いてもよい。[0025] In the above embodiment, a case was described in which an AIGaAs-based material was used, but the material is not limited to this, and other material systems may be used.
【００２６】[0026]
【発明の効果】以上詳述した如く本発明によれば、半導
体多層膜反射鏡を柱状に加工した側面にも電極を設ける
ことにより、しきい値が低く、かつ直列抵抗と熱抵抗の
小さい面発光半導体レ−ザ装置を提供できる。Effects of the Invention As detailed above, according to the present invention, electrodes are also provided on the side surfaces of the semiconductor multilayer reflector processed into a columnar shape, thereby achieving a surface with a low threshold value and low series resistance and low thermal resistance. A light emitting semiconductor laser device can be provided.
【図１】本発明に係る面発光半導体レ−ザ装置の原理説
明図。FIG. 1 is a diagram illustrating the principle of a surface-emitting semiconductor laser device according to the present invention.
【図２】本発明の一実施例に係る面発光半導体レ−ザ装
置の断面図。FIG. 2 is a sectional view of a surface emitting semiconductor laser device according to an embodiment of the present invention.
【図３】本発明に係る面発光半導体レ−ザ装置の製造方
法を工程順に示す断面図。FIG. 3 is a cross-sectional view showing the method of manufacturing a surface emitting semiconductor laser device according to the present invention in order of steps.
【図４】従来例１に係る面発光半導体レ−ザ装置の断面
図。FIG. 4 is a sectional view of a surface emitting semiconductor laser device according to Conventional Example 1.
【図５】従来例２に係る面発光半導体レ−ザ装置の断面
図。FIG. 5 is a sectional view of a surface emitting semiconductor laser device according to Conventional Example 2.
３１…ｎ型のＧａＡｓ基板、３１ａ…穴、３２…ｎ型半
導体多層膜反射鏡、３３…活性層、３４…ｐ型半導体多
層膜反射鏡、３５，３７…絶縁膜、３６…ｐ型電極、３
８…ｎ型電極、３９…レ−ザ光、４０…マスク材。31... N-type GaAs substrate, 31a... Hole, 32... N-type semiconductor multilayer film reflector, 33... Active layer, 34... P-type semiconductor multilayer film reflector, 35, 37... Insulating film, 36... P-type electrode, 3
8... N-type electrode, 39... Laser light, 40... Mask material.
Claims (2)
成された第１導電型の半導体多層膜反射鏡と、前記反射
鏡上に形成された量子井戸を構成する活性層と、前記活
性層上に形成され、前記基板主面と垂直な方向に柱状に
加工され部分を有する第２導電型の半導体多層膜反射鏡
と、この反射鏡の柱状部分の少なくとも側面に電流注入
用電極とを具備することを特徴とする面発光半導体レ−
ザ装置。1. A substrate of a first conductivity type, a semiconductor multilayer film reflecting mirror of a first conductivity type formed on the substrate, an active layer constituting a quantum well formed on the reflecting mirror, a second conductivity type semiconductor multilayer reflective mirror formed on the active layer and having a columnar portion in a direction perpendicular to the main surface of the substrate; and a current injection electrode on at least a side surface of the columnar portion of the reflective mirror. A surface emitting semiconductor laser characterized by comprising:
The equipment.
化学気相堆積により形成される請求項１記載の面発光半
導体レ−ザ装置。2. A surface emitting semiconductor laser device according to claim 1, wherein said current injection electrode is formed by selective chemical vapor deposition of metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9772591A JPH04326787A (en) | 1991-04-26 | 1991-04-26 | Plane luminescent semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9772591A JPH04326787A (en) | 1991-04-26 | 1991-04-26 | Plane luminescent semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04326787A true JPH04326787A (en) | 1992-11-16 |
Family
ID=14199867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9772591A Withdrawn JPH04326787A (en) | 1991-04-26 | 1991-04-26 | Plane luminescent semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04326787A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000016861A (en) * | 1998-06-30 | 2000-01-18 | Inax Corp | Easily processable pottery plate and board using the same |
| JP2014135371A (en) * | 2013-01-10 | 2014-07-24 | Ricoh Co Ltd | Surface emitting laser, surface emitting laser array and optical scanning device |
-
1991
- 1991-04-26 JP JP9772591A patent/JPH04326787A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000016861A (en) * | 1998-06-30 | 2000-01-18 | Inax Corp | Easily processable pottery plate and board using the same |
| JP2014135371A (en) * | 2013-01-10 | 2014-07-24 | Ricoh Co Ltd | Surface emitting laser, surface emitting laser array and optical scanning device |
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