JPH04326008A - Photoelectric conversion circuit - Google Patents

Photoelectric conversion circuit

Info

Publication number
JPH04326008A
JPH04326008A JP3096602A JP9660291A JPH04326008A JP H04326008 A JPH04326008 A JP H04326008A JP 3096602 A JP3096602 A JP 3096602A JP 9660291 A JP9660291 A JP 9660291A JP H04326008 A JPH04326008 A JP H04326008A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
current
differential amplifier
voltage
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3096602A
Other languages
Japanese (ja)
Inventor
Koji Shinomiya
巧治 篠宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3096602A priority Critical patent/JPH04326008A/en
Publication of JPH04326008A publication Critical patent/JPH04326008A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To achieve a simplification of construction and a higher detection accuracy with the curtaining of the number of circuit elements by arranging two changeover switches to switch and output a first or second photoelectric conversion current to a differential amplifier fed back negatively. CONSTITUTION:With the operation of changeover switches 11 and 12 of a switching section 13, first and second photoelectric conversion currents from a semiconductor position detector (PSD)1 are supplied to the same differential amplifier 3, capacitor 5a and resistance 5b. To achieve this, the first and second photoelectric conversion current are subjected to current-voltage conversion on the same conditions. Hence, as compared with the case of the current-voltage conversion made via a separate circuit, highly accurate voltage can be obtained to improve the detection accurate at the incoming position of light on a PDD1. This reduces the of the differential amplifier 3, the capacitor 5a and the resistor 5b to one respectively to allow the curtaining of the number of circuit elements and the lowering the number of bonding pads for external mounting and package terminals as integrated thereby achieving a simplification of construction and a higher detection accuracy.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、半導体位置検出器(
Position Sensitive Device
:PSD )を用いた光電変換回路に関する。
[Industrial Application Field] This invention relates to a semiconductor position detector (
Position Sensitive Device
:PSD) This invention relates to a photoelectric conversion circuit using PSD.

【0002】0002

【従来の技術】図6は従来の半導体位置検出器を用いた
光電変換回路の結線図であり、図6に示すように、半導
体位置検出器(以下PSDと称する)1のカソードKが
バイアス用直流電源2の正端子に接続され、この直流電
源2の負端子が接地され、PSD1の第1,第2の電極
である第1のアノードA1 及び第2のアノードA2 
がそれぞれ第1の差動増幅器3及び第2の差動増幅器4
の反転入力端子に接続され、両差動増幅器3,4の非反
転入力端子が共に接地され、第1の差動増幅器3の反転
入力端子と出力端子との間にリップル除去用のコンデン
サ5aと電流・電圧変換用の抵抗5bとの並列回路が接
続され、同様に第2の差動増幅器4の反転入力端子と出
力端子との間にリップル除去用のコンデンサ6aと電流
・電圧変換用の抵抗6bとの並列回路が接続され、電圧
出力端子7に1接点2回路の切換スイッチ8の共通端子
が接続され、両差動増幅器3,4の出力端子が切換スイ
ッチ8の第1,第2端子8a,8bに接続されている。
6 is a wiring diagram of a photoelectric conversion circuit using a conventional semiconductor position detector. As shown in FIG. 6, a cathode K of a semiconductor position detector (hereinafter referred to as PSD) 1 is used for biasing. A first anode A1 and a second anode A2 are connected to the positive terminal of a DC power source 2, the negative terminal of which is grounded, and are the first and second electrodes of the PSD 1.
are the first differential amplifier 3 and the second differential amplifier 4, respectively.
The non-inverting input terminals of both differential amplifiers 3 and 4 are both grounded, and a capacitor 5a for ripple removal is connected between the inverting input terminal and the output terminal of the first differential amplifier 3. A parallel circuit with a resistor 5b for current/voltage conversion is connected, and a capacitor 6a for ripple removal and a resistor for current/voltage conversion are similarly connected between the inverting input terminal and output terminal of the second differential amplifier 4. A parallel circuit with 6b is connected, a common terminal of a one-contact two-circuit changeover switch 8 is connected to the voltage output terminal 7, and the output terminals of both differential amplifiers 3 and 4 are connected to the first and second terminals of the changeover switch 8. 8a and 8b.

【0003】このとき、両差動増幅器3,4に負帰還が
かかっているため、両差動増幅器3,4の反転入力端子
,非反転入力端子は同電位,即ち接地電位となり、これ
によってPSD1の両アノードA1 ,A2 が接地電
位となる。
At this time, since negative feedback is applied to both differential amplifiers 3 and 4, the inverting input terminal and non-inverting input terminal of both differential amplifiers 3 and 4 are at the same potential, that is, the ground potential. Both anodes A1 and A2 are at ground potential.

【0004】そして、直流電源2によって逆バイアスさ
れたPSD1にスポット光が入射すると、PSD1の電
気的中心位置からスポット光の入射位置までの距離に比
例して光電変換電流が分割され、第1のアノードA1 
と第2のアノードA2 とから第1,第2の光電変換電
流がそれぞれ出力され、第1のアノードA1 からの第
1の光電変換電流及び第2のアノードA2 からの第2
の光電変換電流がコンデンサ5a,6aによりそれぞれ
リップル除去されると同時に、抵抗5b,6bによりそ
れぞれ電流・電圧変換され、切換スイッチ8の切り換え
により差動増幅器3,4の出力電圧が電圧出力端子7に
出力され、PSD1の特性より、入射光量の大小に無関
係に両出力電圧の比からPSD1上の光の入射位置を検
出することができる。
[0004] When a spot light enters the PSD 1 which is reverse biased by the DC power supply 2, the photoelectric conversion current is divided in proportion to the distance from the electrical center position of the PSD 1 to the incident position of the spot light. Anode A1
The first and second photoelectric conversion currents are output from and the second anode A2, respectively, and the first photoelectric conversion current from the first anode A1 and the second photoelectric conversion current from the second anode A2 are output.
The ripples of the photoelectric conversion currents are removed by the capacitors 5a and 6a, respectively, and at the same time, they are converted into current and voltage by the resistors 5b and 6b, respectively, and the output voltages of the differential amplifiers 3 and 4 are changed to the voltage output terminal 7 by switching the changeover switch 8. Due to the characteristics of the PSD 1, the incident position of the light on the PSD 1 can be detected from the ratio of both output voltages, regardless of the magnitude of the amount of incident light.

【0005】[0005]

【発明が解決しようとする課題】しかし、上記した従来
の光電変換回路の場合、差動増幅器,コンデンサ,抵抗
をそれぞれ2個必要とし、特に半導体集積回路で形成す
る場合に、2個のコンデンサ5a,6a及び2個の抵抗
5b,6bを外付けしなければならないため、外付け用
ボンディングパッドを設けたり、半導体集積回路のパッ
ケージ端子として外付け部品用のものを設ける必要にな
り、構成の複雑化を招き、しかも外付け部品数が多いた
め、外付け部品の特性の相対ばらつきが影響してPSD
1上の光の入射位置の検出精度が低下するという問題点
があった。
However, in the case of the above-mentioned conventional photoelectric conversion circuit, two differential amplifiers, two capacitors, and two resistors are required, and especially when formed using a semiconductor integrated circuit, two capacitors 5a are required. , 6a and the two resistors 5b, 6b must be externally attached, it is necessary to provide external bonding pads and provide terminals for external components as package terminals for the semiconductor integrated circuit, making the configuration complicated. Moreover, since there are a large number of external components, the relative variation in the characteristics of external components will affect the PSD.
There was a problem in that the detection accuracy of the incident position of light on 1 was lowered.

【0006】この発明は、上記のような問題点を解消す
るためになされたもので、回路素子数を削減し、集積化
した場合の外付け用ボンディングパッドやパッケージ端
子を低減し、構成の簡素化及び検出精度の向上を図れる
ようにすることを目的とする。
The present invention was made to solve the above-mentioned problems, and it reduces the number of circuit elements, reduces the number of external bonding pads and package terminals when integrated, and simplifies the configuration. The purpose is to improve the detection accuracy and detection accuracy.

【0007】[0007]

【課題を解決するための手段】この発明に係る光電変換
回路は、第1,第2の電極から第1,第2の光電変換電
流をそれぞれ出力する半導体位置検出器と、前記第1,
第2の電極に接続され前記第1又は第2の光電変換電流
を切換出力する切換部と、前記切換部からの前記第1又
は第2の光電変換電流が入力される負帰還のかかった差
動増幅器とを備えたことを特徴とする光電変換回路。
[Means for Solving the Problems] A photoelectric conversion circuit according to the present invention includes a semiconductor position detector that outputs first and second photoelectric conversion currents from first and second electrodes, and a semiconductor position detector that outputs first and second photoelectric conversion currents from first and second electrodes, respectively;
a switching section that is connected to a second electrode and switches and outputs the first or second photoelectric conversion current; and a negative feedback applied difference to which the first or second photoelectric conversion current from the switching section is input. A photoelectric conversion circuit characterized by comprising a dynamic amplifier.

【0008】[0008]

【作用】この発明においては、切換部により、半導体位
置検出器からの第1又は第2の光電変換電流を、負帰還
のかかった差動増幅器に切換出力するため、差動増幅器
や切換部からの第1又は第2の光電変換電流を電流・電
圧変換する回路が単一共用化され、従来に比べ、回路素
子数が削減され、集積化した場合の外付け用ボンディン
グパッドやパッケージ端子が低減され、構成の簡素化及
び検出精度の向上が図れる。
[Operation] In this invention, the switching section switches and outputs the first or second photoelectric conversion current from the semiconductor position detector to the differential amplifier with negative feedback. The circuit that converts the first or second photoelectric conversion current into current/voltage is now single and common, reducing the number of circuit elements compared to the past, and reducing the number of external bonding pads and package terminals when integrated. Therefore, the configuration can be simplified and the detection accuracy can be improved.

【0009】[0009]

【実施例】図1はこの発明の光電変換回路の第1の実施
例の結線図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a wiring diagram of a first embodiment of a photoelectric conversion circuit according to the present invention.

【0010】図1において、図6と相違するのは、図6
における第2の差動増幅器4及びコンデンサ6a,抵抗
6bを削除して差動増幅器3及びコンデンサ5a,抵抗
5bのみとし、図5における切換スイッチ8を削除して
差動増幅器3の出力端子を電圧出力端子7に接続し、互
いに連動して切り換わる1回路2接点の第1,第2の切
換スイッチ11,12を設け、両切換スイッチ11,1
2の共通端子をそれぞれPSD1の第1のアノードA1
 ,第2のアノードA2 に接続し、第1の切換スイッ
チ11の第1,第2の端子11a,11bをそれぞれ差
動増幅器3の反転入力端子,非反転入力端子に接続する
と共に、第2の切換スイッチ12の第1,第2の端子1
2a,12bをそれぞれ差動増幅器3の非反転入力端子
,反転入力端子に接続し、両切換スイッチ11,12に
より切換部13を構成したことである。
1, the difference from FIG. 6 is that FIG.
The second differential amplifier 4, capacitor 6a, and resistor 6b in FIG. First and second change-over switches 11 and 12 of one circuit and two contacts connected to the output terminal 7 and switched in conjunction with each other are provided.
2 common terminals to the first anode A1 of PSD1, respectively.
, the second anode A2, and connect the first and second terminals 11a and 11b of the first changeover switch 11 to the inverting input terminal and non-inverting input terminal of the differential amplifier 3, respectively. First and second terminals 1 of changeover switch 12
2a and 12b are connected to the non-inverting input terminal and the inverting input terminal of the differential amplifier 3, respectively, and the switching section 13 is configured by both the changeover switches 11 and 12.

【0011】このとき、コンデンサ5a及び抵抗5bの
並列回路による負帰還によって、理論的には差動増幅器
3の反転入力端子,非反転入力端子は同電位となり、P
SD1の両アノードA1 ,A2 が基準電位である接
地電位になるが、差動増幅器3に入力オフセット電圧が
ある場合、この入力オフセット電圧は誤差となるため、
できるだけ入力オフセット電圧の小さい差動増幅器を選
定することにより、PSD1の両アノードA1 ,A2
 を同電位にすることができる。
At this time, due to negative feedback by the parallel circuit of the capacitor 5a and the resistor 5b, the inverting input terminal and the non-inverting input terminal of the differential amplifier 3 are theoretically at the same potential, and P
Both anodes A1 and A2 of SD1 are at the ground potential which is the reference potential, but if the differential amplifier 3 has an input offset voltage, this input offset voltage will cause an error.
By selecting a differential amplifier with as small an input offset voltage as possible, both anodes A1 and A2 of PSD1
can be made to have the same potential.

【0012】また、抵抗5bによりPSD1からの第1
又は第2の光電変換電流を電流・電圧変換するが、電流
・電圧変換の効率の向上を図るには、差動増幅器3の入
力インピーダンスが高いほどよく、差動増幅器3とし入
力インピーダンス特性の充分高いものを用いるとよい。
[0012] Also, the resistor 5b allows the first
Alternatively, the second photoelectric conversion current is converted into a current/voltage, but in order to improve the efficiency of current/voltage conversion, the higher the input impedance of the differential amplifier 3, the better. It is better to use something expensive.

【0013】そして、両切換スイッチ11,12が第1
の端子11a,12a側に切り換わっている場合には、
両切換スイッチ11,12を介してPSD1の両アノー
ドA1 ,A2 はそれぞれ差動増幅器3の反転入力端
子,非反転入力端子に接続されるため、PSD1の第1
のアノードA1 からの第1の光電変換電流のリップル
がコンデンサ5aにより除去されると共に、第1の光電
変換電流が抵抗5bにより電流・電圧変換され、抵抗5
bによる電圧降下によって発生した出力電圧が電圧出力
端子7に現われる。
[0013] Both changeover switches 11 and 12 are set to the first
If the terminals are switched to the terminals 11a and 12a,
Both anodes A1 and A2 of PSD1 are connected to the inverting input terminal and non-inverting input terminal of differential amplifier 3, respectively, via both changeover switches 11 and 12.
The ripple of the first photoelectric conversion current from the anode A1 is removed by the capacitor 5a, and the first photoelectric conversion current is converted into a current/voltage by the resistor 5b.
The output voltage generated by the voltage drop caused by b appears at the voltage output terminal 7.

【0014】一方、両切換スイッチ11,12が第2の
端子11b,12b側に切り換わっている場合には、両
切換スイッチ11,12を介してPSD1の両アノード
A1 ,A2 はそれぞれ差動増幅器3の非反転入力端
子,反転入力端子に接続されるため、PSD1の第2の
アノードA2 からの第2の光電変換電流のリップルが
コンデンサ5aにより除去されると共に、第2の光電変
換電流が抵抗5bにより電流・電圧変換され、抵抗5b
による電圧降下によって発生した出力電圧が電圧出力端
子7に現われる。
On the other hand, when both the changeover switches 11 and 12 are switched to the second terminals 11b and 12b, both the anodes A1 and A2 of the PSD 1 are connected to the differential amplifiers via the changeover switches 11 and 12, respectively. Since the ripple of the second photoelectric conversion current from the second anode A2 of PSD 1 is removed by the capacitor 5a, the second photoelectric conversion current is connected to the non-inverting input terminal and the inverting input terminal of the PSD 1. 5b converts the current to voltage, and resistor 5b
An output voltage generated by the voltage drop appears at the voltage output terminal 7.

【0015】このとき、切換スイッチ11,12の切り
換えによって、PSD1からの第1,第2の光電変換電
流が同じ差動増幅器3,コンデンサ5a,抵抗5bに供
給されるため、同じ条件で第1,第2の光電変換電流が
電流・電圧変換され、従来のように別個の回路を経て電
流・電圧変換する場合に比べ、精度の高い電圧を得るこ
とができ、PSD1上の光の入射位置の検出精度の向上
を図ることが可能になる。
At this time, by switching the changeover switches 11 and 12, the first and second photoelectric conversion currents from the PSD 1 are supplied to the same differential amplifier 3, capacitor 5a, and resistor 5b. , the second photoelectric conversion current is converted into a current/voltage, and compared to the conventional case where the current/voltage is converted through a separate circuit, a voltage with higher accuracy can be obtained, and the position of the light incident on the PSD 1 can be adjusted. It becomes possible to improve detection accuracy.

【0016】従って、差動増幅器,コンデンサ,抵抗が
それぞれ1個でよいため、従来に比べ、回路素子数を削
減でき、集積化した場合の外付け用ボンディングパッド
やパッケージ端子を低減することができ、構成の簡素化
及び検出精度の向上を図ることができる。
[0016] Therefore, since only one differential amplifier, capacitor, and resistor are required, the number of circuit elements can be reduced compared to the conventional method, and the number of external bonding pads and package terminals can be reduced when integrated. , it is possible to simplify the configuration and improve detection accuracy.

【0017】つぎに、図2はこの発明の第2の実施例の
結線図である。
Next, FIG. 2 is a wiring diagram of a second embodiment of the present invention.

【0018】図2において、図1と相違するのは、差動
増幅器3の反転入力端子,出力端子を直接接続して負帰
還をかけ、差動増幅器3の非反転入力端子と接地との間
にコンデンサ5a,抵抗5bの並列回路を接続したこと
である。
In FIG. 2, the difference from FIG. 1 is that the inverting input terminal and output terminal of the differential amplifier 3 are directly connected to apply negative feedback, and the non-inverting input terminal of the differential amplifier 3 and the ground are connected directly. A parallel circuit consisting of a capacitor 5a and a resistor 5b is connected to the capacitor 5a and the resistor 5b.

【0019】このように、差動増幅器3の非反転入力端
子と接地との間にコンデンサ5aと抵抗5bの並列回路
を接続することにより、切換スイッチ11,12の切り
換えによって、PSD1からの第1又は第2の光電変換
電流はこの並列回路を経て接地へと流され、PSD1に
よる第1又は第2の光電変換電流は抵抗5bにより電流
・電圧変換され、負帰還によって差動増幅器3の反転入
力端子,非反転入力端子が同電位となるため、抵抗5b
の電圧降下がボロテージワォロワ回路を介し出力電圧と
して電圧出力端子7に現われる。
In this way, by connecting the parallel circuit of the capacitor 5a and the resistor 5b between the non-inverting input terminal of the differential amplifier 3 and the ground, the first Alternatively, the second photoelectric conversion current is passed through this parallel circuit to the ground, and the first or second photoelectric conversion current by the PSD 1 is converted into a current/voltage by the resistor 5b, and the inverting input of the differential amplifier 3 is output by negative feedback. Since the terminal and the non-inverting input terminal are at the same potential, the resistor 5b
The voltage drop appears as an output voltage at the voltage output terminal 7 via the voltage follower circuit.

【0020】従って、第1の実施例と同様、回路素子数
を低減できると共に、構成の簡素化及び検出精度の向上
を図ることができるのは勿論のこと、半導体集積回路に
より形成した場合に設けるべき外付け用ボンディングパ
ッド或いはパッケージ端子は、コンデンサ5a,抵抗5
bの並列回路の一端と差動増幅器3の非反転入力端子と
を接続するための1個でよく、第1の実施例の場合にコ
ンデンサ5a,抵抗5bの並列回路の両端を接続するた
めに外付け用ボンディングパッド或いはパッケージ端子
を2個要するのに比べて少なくて済む。
Therefore, as in the first embodiment, it is possible to reduce the number of circuit elements, simplify the configuration, and improve detection accuracy. The external bonding pads or package terminals that should be connected are the capacitor 5a and the resistor 5.
One terminal is sufficient for connecting one end of the parallel circuit of capacitor 5a and the non-inverting input terminal of differential amplifier 3, and for connecting both ends of the parallel circuit of capacitor 5a and resistor 5b in the case of the first embodiment. It requires fewer external bonding pads or two package terminals.

【0021】また、図3はこの発明の第3の実施例の結
線図である。
FIG. 3 is a wiring diagram of a third embodiment of the present invention.

【0022】図3において、図1と相違するのは、切換
スイッチ11,12に代えて2個のクロックφ,φバー
によりオン,オフ制御される4個のトランスミッション
ゲート14a,14b,14c,14dを設け、トラン
スミッションゲート14a,14bの一端をPSD1の
第1のアノードA1 に接続し、トランスミッションゲ
ート14c,14dの一端をPSD1の第2のアノード
A2 に接続し、トランスミッションゲート14a,1
4dの他端を差動増幅器3の反転入力端子に接続し、ト
ランスミッションゲート14b,14cの他端を差動増
幅器3の非反転入力端子に接続して切換部14を構成し
たことである。
In FIG. 3, the difference from FIG. 1 is that four transmission gates 14a, 14b, 14c, 14d are controlled on and off by two clocks φ and φ bar instead of the changeover switches 11 and 12. , one end of the transmission gates 14a, 14b is connected to the first anode A1 of the PSD 1, one end of the transmission gates 14c, 14d is connected to the second anode A2 of the PSD 1, and the transmission gates 14a, 1 are connected to the second anode A2 of the PSD 1.
4d is connected to the inverting input terminal of the differential amplifier 3, and the other ends of the transmission gates 14b and 14c are connected to the non-inverting input terminal of the differential amplifier 3 to form the switching unit 14.

【0023】このとき、トランスミッションゲート14
a,14cが同時にオンすると共にトランスミッション
ゲート14b,14dがオフすることによって、PSD
1の第1のアノードA1 からの第1の光電変換電流が
差動増幅器3の反転入力端子及びコンデンサ5a,抵抗
5bに供給されるため、電圧出力端子7に第1の光電変
換電流を電流・電圧変換した電圧が出力される。
At this time, the transmission gate 14
a, 14c are turned on at the same time, and transmission gates 14b, 14d are turned off.
1, the first photoelectric conversion current from the first anode A1 is supplied to the inverting input terminal of the differential amplifier 3, the capacitor 5a, and the resistor 5b. The converted voltage is output.

【0024】一方、トランスミッションゲート14b,
14dが同時にオンすると共にトランスミッションゲー
ト14a,14cがオフすることによって、PSD1の
第2のアノードA2 からの第2の光電変換電流が差動
増幅器3の反転入力端子及びコンデンサ5a,抵抗5b
に供給されるため、電圧出力端子7に第2の光電変換電
流を電流・電圧変換した電圧が出力される。
On the other hand, the transmission gate 14b,
14d is simultaneously turned on and transmission gates 14a and 14c are turned off, the second photoelectric conversion current from the second anode A2 of the PSD 1 is transferred to the inverting input terminal of the differential amplifier 3, the capacitor 5a, and the resistor 5b.
Therefore, a voltage obtained by converting the second photoelectric conversion current into a current and a voltage is output to the voltage output terminal 7.

【0025】従って、第1の実施例と同等の効果を得る
ことができる。
[0025] Therefore, effects similar to those of the first embodiment can be obtained.

【0026】さらに、図4はこの発明の第4の実施例の
結線図である。
Furthermore, FIG. 4 is a wiring diagram of a fourth embodiment of the present invention.

【0027】図4において、図3と相違するのは、差動
増幅器3の反転入力端子,出力端子を直接接続して負帰
還をかけ、差動増幅器3の非反転入力端子と接地との間
にコンデンサ5aと抵抗5bの並列回路を接続したこと
であり、この場合第2の実施例と同等の効果を得ること
ができ、第3の実施例に比べて集積化した場合の外付け
用ボンディングパッド或いはパッケージ端子の低減を図
ることができる。
In FIG. 4, the difference from FIG. 3 is that the inverting input terminal and output terminal of the differential amplifier 3 are directly connected to apply negative feedback, and the non-inverting input terminal of the differential amplifier 3 and the ground are connected directly. A parallel circuit of a capacitor 5a and a resistor 5b is connected in this case, and in this case, the same effect as the second embodiment can be obtained, and compared to the third embodiment, the external bonding is The number of pads or package terminals can be reduced.

【0028】また、図5はこの発明の第5の実施例の結
線図である。
FIG. 5 is a wiring diagram of a fifth embodiment of the present invention.

【0029】図1におけるPSD1に代え、図5(a)
に示すように電極構造を逆転したPSD1を用いてもよ
く、このときの結線は図5(b)に示すようになる。
[0029] In place of PSD1 in Fig. 1, Fig. 5(a)
As shown in FIG. 5(b), a PSD1 with the electrode structure reversed may be used, and the wiring in this case is as shown in FIG. 5(b).

【0030】即ち、図5(b)において、図1と相違す
るのは、正端子が接地された直流電源2の負端子にPS
D1のアノードを接続し、第1,第2の電極である第1
,第2のカソードK1 ,K2 をそれぞれ両切換スイ
ッチ11,12の共通端子に接続したことである。
That is, in FIG. 5(b), the difference from FIG. 1 is that a PS is connected to the negative terminal of the DC power supply 2 whose positive terminal is grounded.
The anode of D1 is connected to the first electrode, which is the first and second electrode.
, the second cathodes K1 and K2 are connected to the common terminal of both changeover switches 11 and 12, respectively.

【0031】従って、図5の(b)の構成によれば、光
電変換電流の向きが逆になる以外は図1と同様の動作で
あるため、第1の実施例と同等の効果を得ることができ
る。
Therefore, according to the configuration of FIG. 5(b), the operation is the same as that of FIG. 1 except that the direction of the photoelectric conversion current is reversed, so that the same effect as the first embodiment can be obtained. Can be done.

【0032】また、図2,図3,図4に関しても、図5
(b)のPSD1及び直流電源2と同様の構成にしても
よい。
[0032] Also, regarding FIGS. 2, 3, and 4, FIG.
The configuration may be similar to that of the PSD 1 and DC power supply 2 in (b).

【0033】なお、切換部の構成は上記各実施例に限定
されるものではなく、また切換部を半導体スイッチによ
り構成する場合には、トランスミッションゲート以外の
半導体スイッチにより構成してもよいのは言うまでもな
い。
It should be noted that the configuration of the switching section is not limited to the above embodiments, and it goes without saying that when the switching section is configured with a semiconductor switch, it may be configured with a semiconductor switch other than the transmission gate. stomach.

【0034】[0034]

【発明の効果】以上のように、この発明の光電変換回路
によれば、切換部により、半導体位置検出器からの第1
又は第2の光電変換電流を、負帰還のかかった差動増幅
器に切換出力するため、差動増幅器や切換部からの第1
,第2の光電変換電流を電流・電圧変換する回路を単一
共用化でき、従来に比べ、回路素子数を削減でき、集積
化した場合の外付け用ボンディングパッド或いはパッケ
ージ端子を低減することができ、差動増幅器等の共用化
によって、構成の簡素化及び検出精度の向上を図ること
が可能となり、測距装置等に好適である。
Effects of the Invention As described above, according to the photoelectric conversion circuit of the present invention, the switching unit allows the first
Alternatively, in order to switch and output the second photoelectric conversion current to a differential amplifier with negative feedback, the first photoelectric conversion current from the differential amplifier or switching section
, the circuit that converts the second photoelectric conversion current into current/voltage can be shared as a single circuit, the number of circuit elements can be reduced compared to the conventional method, and the number of external bonding pads or package terminals can be reduced when integrated. By sharing the differential amplifier and the like, it is possible to simplify the configuration and improve detection accuracy, making it suitable for distance measuring devices and the like.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】この発明の光電変換回路の第1の実施例の結線
図である。
FIG. 1 is a wiring diagram of a first embodiment of a photoelectric conversion circuit of the present invention.

【図2】この発明の第2の実施例の結線図である。FIG. 2 is a wiring diagram of a second embodiment of the invention.

【図3】この発明の第3の実施例の結線図である。FIG. 3 is a wiring diagram of a third embodiment of the invention.

【図4】この発明の第4の実施例の結線図である。FIG. 4 is a wiring diagram of a fourth embodiment of the invention.

【図5】この発明の第5の実施例の結線図である。FIG. 5 is a wiring diagram of a fifth embodiment of the invention.

【図6】従来の光電変換回路の結線図である。FIG. 6 is a wiring diagram of a conventional photoelectric conversion circuit.

【符号の説明】[Explanation of symbols]

1  PSD(半導体位置検出器) 3  差動増幅器 13,14  切換部 1 PSD (semiconductor position detector) 3 Differential amplifier 13, 14 Switching section

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  第1,第2の電極から第1,第2の光
電変換電流をそれぞれ出力する半導体位置検出器と、前
記第1,第2の電極に接続され前記第1又は第2の光電
変換電流を切換出力する切換部と、前記切換部からの前
記第1又は第2の光電変換電流が入力される負帰還のか
かった差動増幅器とを備えたことを特徴とする光電変換
回路。
1. A semiconductor position detector that outputs first and second photoelectric conversion currents from first and second electrodes, respectively; A photoelectric conversion circuit comprising: a switching section that switches and outputs a photoelectric conversion current; and a differential amplifier with negative feedback to which the first or second photoelectric conversion current from the switching section is input. .
JP3096602A 1991-04-26 1991-04-26 Photoelectric conversion circuit Pending JPH04326008A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3096602A JPH04326008A (en) 1991-04-26 1991-04-26 Photoelectric conversion circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3096602A JPH04326008A (en) 1991-04-26 1991-04-26 Photoelectric conversion circuit

Publications (1)

Publication Number Publication Date
JPH04326008A true JPH04326008A (en) 1992-11-16

Family

ID=14169426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3096602A Pending JPH04326008A (en) 1991-04-26 1991-04-26 Photoelectric conversion circuit

Country Status (1)

Country Link
JP (1) JPH04326008A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015105048A1 (en) * 2014-01-08 2015-07-16 旭化成エレクトロニクス株式会社 Output-current detection chip for diode sensors, and diode sensor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239055U (en) * 1988-09-08 1990-03-15
JPH02221562A (en) * 1989-02-20 1990-09-04 Matsushita Electric Ind Co Ltd Bathroom unit
JPH02285159A (en) * 1989-04-26 1990-11-22 Matsushita Electric Ind Co Ltd Bath room device
JPH03183333A (en) * 1989-12-11 1991-08-09 Matsushita Electric Ind Co Ltd Controller for bathroom apparatus
JPH03202568A (en) * 1989-12-28 1991-09-04 Takenaka Komuten Co Ltd Bathroom unit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239055U (en) * 1988-09-08 1990-03-15
JPH02221562A (en) * 1989-02-20 1990-09-04 Matsushita Electric Ind Co Ltd Bathroom unit
JPH02285159A (en) * 1989-04-26 1990-11-22 Matsushita Electric Ind Co Ltd Bath room device
JPH03183333A (en) * 1989-12-11 1991-08-09 Matsushita Electric Ind Co Ltd Controller for bathroom apparatus
JPH03202568A (en) * 1989-12-28 1991-09-04 Takenaka Komuten Co Ltd Bathroom unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015105048A1 (en) * 2014-01-08 2015-07-16 旭化成エレクトロニクス株式会社 Output-current detection chip for diode sensors, and diode sensor device
CN105899918A (en) * 2014-01-08 2016-08-24 旭化成微电子株式会社 Output-current detection IC chip for diode sensors, and diode sensor device
EP3093635A4 (en) * 2014-01-08 2017-02-15 Asahi Kasei Microdevices Corporation Output-current detection chip for diode sensors, and diode sensor device
JPWO2015105048A1 (en) * 2014-01-08 2017-03-23 旭化成エレクトロニクス株式会社 Diode type sensor output current detection IC chip and diode type sensor device
US9863808B2 (en) 2014-01-08 2018-01-09 Asahi Kasei Microdevices Corporation Output-current detection chip for diode sensors, and diode sensor device
CN105899918B (en) * 2014-01-08 2018-01-16 旭化成微电子株式会社 The output electric current measure IC chip and diode-type sensor device of diode-type sensor

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