JPH04322444A - Composite type wafer processor - Google Patents

Abstract

PURPOSE:To efficiently process a sheet and a batch in a composite type wafer processor. CONSTITUTION:A load locking chamber 20, sheet processing chambers 36L, 30R and a batch processing chamber 40 are connected through a platform 11. In the platform 11, cassette conveyors 50L, 50R for conveying batch processing cassettes 41L, 41R between the platform 11 and the chamber 40, are provided. Further, in the platform 11, a wafer conveyor 12 for wafer conveying the cassettes 41L, 41R between the chamber 20 and the chamber 40, is provided. The wafer W to both the chambers 30L, 30R and 40 is smoothly conveyed by both the conveyors 50L, 50R and 12.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention is a complex wafer process in which multiple processes, such as CVD of a silicon oxide film and reflow for planarization as a subsequent process, are performed continuously in an atmosphere cut off from the atmosphere. The present invention relates to an apparatus, and particularly relates to an apparatus that performs single wafer processing in at least one process and batch process in the other process.

0002

[Prior Art] Conventionally, a complex type wafer processing apparatus known as a so-called multi-chamber type performs single-wafer processing in each processing chamber, and wafers are transported one by one to each processing chamber. Most of them are. This method increases the utilization rate of each processing chamber and enables efficient operation when the processing time in each processing chamber is approximately equal; however, when there is a large difference in processing time, single-wafer processing and batch processing It is preferable to combine them.

Conventionally, methods that combine single-wafer processing and batch processing include methods in which single-wafer processed wafers are sequentially carried into a batch processing chamber and batch processing is performed when a predetermined number of wafers is reached; In this method, the wafers stored in the buffer chamber were stored in a buffer chamber, and when the preceding batch processing was completed, the wafers stored in the buffer chamber were carried into the batch processing chamber to perform batch processing. The same applies to the case where batch processing is the pre-process and then single-wafer processing is performed.

0004

[Problems to be Solved by the Invention] The method in which single-wafer processed wafers are sequentially carried into a batch processing chamber or the batch-processed wafers are sequentially carried out from a batch processing chamber to a single-wafer processing chamber is as described above. The waiting time for both processing chambers cannot be eliminated unless a buffer chamber is interposed between the two processing chambers.

Furthermore, in the conventional apparatus of this kind, all wafers are transferred between the processing chambers by a wafer transfer device installed in the center of a plurality of processing chambers arranged approximately on the circumference. Therefore, even if the buffer chamber is interposed, the load on the wafer transport device is concentrated when carrying wafers into and out of the batch processing chamber, and there are drawbacks such as impeding the carrying of wafers into and out of the single wafer processing chamber.

[0006] The present invention efficiently performs processing with less waiting time in a composite wafer processing apparatus that performs single wafer processing and batch processing as described above in separate processing chambers connected to each other via a platform. The aim is to provide a device that can

[0007]

[Means for Solving the Problems] The present invention to achieve the above object includes a platform formed by a hermetically sealed space, a load lock chamber, and a single wafer, which are connected to each other by the platform so as to be openable and closable. A processing chamber, a batch processing chamber, a batch processing cassette that supports a plurality of wafers in the batch processing chamber, and a cassette transport provided in the platform so that the cassette can be transported between the batch processing chamber and the platform. A composite wafer processing apparatus comprising a wafer processing apparatus and a wafer transfer device provided in the platform so as to be able to transfer wafers between the cassette placed in the platform, the single wafer processing chamber, and the load lock chamber. be.

[0008]

[Operation] Taking as an example the case where single wafer processing is performed first, a wafer carried into a load lock chamber is carried by a wafer transfer device to a single wafer processing chamber and single wafer processing is performed thereon. Single-wafer processed wafers are stored in a batch processing cassette placed in a platform from a single-wafer processing chamber by a wafer transport device.

Batch processing is performed in the batch processing chamber during the above single wafer processing. When this batch processing is completed, the processing agent wafers in the batch processing chamber are carried out into the platform by the cassette transport device together with the batch processing cassettes, and the batch processing cassettes containing the single wafer processing agent wafers are transported into the cassette instead. The device transports it to the batch processing chamber, and batch processing is restarted.

[0010] Processing agent wafers supported by a cassette for batch processing and carried out into the platform are sequentially carried by a wafer transfer device to a load lock chamber using gaps between loading and unloading for single wafer processing. The single-wafer processing agent wafers that are sequentially carried out from the single-wafer processing chamber are stored in the empty space of the cassette from which the processing agent wafers were carried out.

[0011]

Embodiments An embodiment of the present invention will be described below with reference to FIG. In FIG. 1, a platform 11 is formed by a sealable container 10. A wafer transfer device 12 is provided approximately at the center of the platform 11 .

The wafer transfer device 12 has an arm 13 that is rotatable about an axis 01 and that is extendable and retractable in the radial direction.
The wafer W is held at the tip of the arm 13.

[0013] The platform 11 has a load lock chamber 2 located approximately along the circumference centered on the axis 01.
0 and the first and second CVD furnaces 30L and 3 as single wafer processing chambers.
0R are connected to each other.

The load lock chamber 20 has a gate valve 21 for the outside and a gate valve 2 for the platform 11.
2, a large number of wafers W are stored inside, and the wafers W are carried in and out one by one by the wafer transfer device 12, but this configuration is the same as that of a known one, so The explanation will be omitted.

The first and second CVD furnaces 30L and 30R are provided symmetrically in FIG. 1, and have exactly the same structure. Both CVD furnaces 30L and 30R are designed to form a silicon oxide film on the surface of the wafer W using a single-wafer processing method, and the inside of the furnace is configured to be openable and closable with respect to the platform 11 by raising and lowering a bell jar (not shown). ing. Since these CVD furnaces 30L and 30R are similar to known ones, a detailed description of their structure will be omitted.

A reflow furnace 40 is provided above the platform 11 in FIG. 1 to planarize the silicon oxide film formed in the CVD furnaces 30L and 30R. The reflow oven 40 is a specific example of a batch processing chamber, and wafers W are placed in multiple stages in cassettes 41L and 41R for batch processing, which will be described later, are received into the reflow oven 40 and subjected to reflow processing. . Since this reflow oven 40 is similar to a known one, detailed explanation will be omitted.

Inside the platform 11, first and second cassette transport devices 50L and 50R are provided symmetrically with respect to the reflow oven 40 in FIG. These cassette transport devices 50L, 50R have arms 51L, 5 that rotate around axes 02, 03 and extend and contract in the radial direction.
1R, and a batch processing cassette 41 for reflowing in a reflow oven 40 at the tips of the arms 51L and 51R.
It is designed to place L and 41R.

The arms 51L and 51R are provided so as to be movable in the direction perpendicular to the plane of the paper (hereinafter referred to as the vertical direction) in FIG. The wafers W are received in multiple stages, and the wafers W received in multiple stages can be sequentially taken out.

Furthermore, cassette transport devices 50L, 50R
The cassettes 41L and 41R are arranged in two positions, as shown in FIG.

Next, the operation of this device will be explained. First, the gate valve 21 is opened, and a transport cassette (not shown) carrying a plurality of wafers W is loaded into the load lock chamber 20. Next, the gate valve 21 is closed, and the load lock chamber 2 is
After reducing the pressure and creating an inert gas atmosphere inside the platform 11, the gate valve 22
open.

Next, the wafer W in the load lock chamber 20 is
The wafer is transported to the first CVD furnace 30L by the wafer transport device 12, and a silicon oxide film is formed thereon. Wafer transport device 1
2, one wafer W is subsequently transferred to the second CVD furnace 30R.
A silicon oxide film is formed in the same way.

The processing time in both CVD furnaces 30L and 30R, that is, the time required for temperature raising, CVD, and temperature cooling, varies depending on the thickness of the film to be formed, but for example, in the case of a film thickness of 8000 angstroms, it is over 2 minutes, and the time required for loading and unloading is Even if you include it, it will take less than 3 minutes.

The wafer W on which the silicon oxide film has been formed in the first and second CVD furnaces 30L and 30R is transferred to the wafer transfer device 1.
2, and is supported by the first cassette transport device 50L and located within the platform 11.
Loaded into 1L.

When a predetermined number of wafers W are loaded into the cassette 41L, the reflow oven 40 is opened and the cassette 41L is loaded.
is carried into the reflow oven 40 and reflowed. The processing time in the reflow oven 40 varies depending on the CVD film thickness, etc., but is approximately one hour, including the reflow time and the temperature rising and cooling time.

Even while performing reflow using the cassette 41L as described above, the formation of silicon oxide films by both the CVD furnaces 30L and 30R continues, and the wafers taken out from both the CVD furnaces 30L and 30R continue to be formed. W is cassette 41
Stored in R.

When the reflow process in the reflow oven 40 is completed, the cassette 41L placed in the reflow oven 40
As shown in FIG. 1, the first cassette transport device 50L transports the cassette 41R into the platform 11, and the second cassette transport device 50R transports the cassette 41R into the reflow oven 40 to perform reflow.

After the reflow process, the wafer W supported in the cassette 41L is returned to the wafer transport cassette (not shown) in the load lock chamber 20 by the wafer transport device 12. This is performed during the wafer loading operation from the lock chamber 20 to the CVD furnaces 30L and 30R, and after the at least two wafers W have been sequentially returned from the cassette 41L, the
The wafers W carried out from the VD furnaces 30L and 30R are stored.

When all of the processing agent wafers W in the cassette 41L are returned to the load lock chamber 20 and a predetermined number of wafers W on which silicon oxide films have been formed are stored in the cassette 41L, the reflow process is completed. , the cassette 41R is taken out from the reflow oven 40, and the cassette 41L is carried into the reflow oven 40 again in its place, and the same operation is repeated thereafter.

In the above-mentioned embodiment, the cassette conveying device has two
Although an example in which a stand is provided is shown, the number of cassette transport devices can be reduced to one by providing another device that supports each of the cassettes 41L and 41R in a vertically movable manner within the platform 11. In addition, one or more CVD furnaces may be provided, two load lock chambers may be provided, etc.
Various changes are possible.

[0030] Furthermore, although the above-mentioned embodiment shows an example in which a silicon oxide film is formed in a single wafer processing chamber and reflow is performed in a batch processing chamber, the present invention is not limited to this. Vapor phase growth is performed, and pre-treatments such as pre-baking or post-treatments such as annealing are performed in a batch processing chamber.
It is applicable to various processes.

[0031]

As described above, according to the present invention, single wafer processing and batch processing can be performed efficiently with less waiting time.

[Brief explanation of the drawing]

FIG. 1 is a schematic plan view showing an embodiment of the present invention.

[Explanation of symbols]

10 Container 11 Platform 12 Wafer transfer device 20 Load lock chamber 30L, 30R Single wafer processing chamber (CVD furnace) 40 Batch processing chamber (reflow oven) 41L, 41R Cassette for batch processing 50L, 5
0R Cassette transport device

Claims (1)

[Claims] Claim 1: A platform formed by a hermetically sealed space, a load lock chamber, a single wafer processing chamber, and a batch processing chamber, each of which is connected to the platform so as to be openable and closable, and a plurality of chambers within the same batch processing chamber. a cassette for batch processing that supports wafers, a cassette transfer device provided in the platform to be able to transfer the cassette between the batch processing chamber and the platform, and the cassette and single wafer placed in the platform. A composite wafer processing apparatus comprising a wafer transfer device provided within the platform so as to be able to transfer wafers between a processing chamber and a load lock chamber.