JPH04320351A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To provide manufacturing method for semiconductor device in which cost can be reduced and which can deal with high density packaging. CONSTITUTION:A copper conductor lead 15 is formed through electrolytic plating on a film carrier 14. Gold electrode protrusions 16 are then formed at positions on the conductor lead 15 corresponding to the electrode terminals 12 of a semiconductor element 11 to be mounted on the conductor lead 15. A hole part 18 is made through etching in the film carrier 14. Electrolytic gold plating 17 is then applied onto the surfaces of the conductor lead 15 and the electrode protrusions 16 in order to prevent corrosion of copper. The electrode protrusions are then positioned with respect to the electrode terminal 12 of the semiconductor element 11 through the electrolytic gold plating 17 and thermally bonded under pressure and then a thin protective coat 19 is applied onto the surface of the semiconductor element 11 thus completing a package.

Description

[Detailed description of the invention]

[Object of the invention]

0002

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element is bonded to an insulating film such as a film carrier.

0003

2. Description of the Related Art In recent years, semiconductor devices such as ICs and LSIs have been widely used in fields such as liquid crystal displays and EL displays. These displays are desired to be small and compact.

[0004] Therefore, in order to cope with the miniaturization of semiconductor devices, there has been a demand for smaller and thinner packages. In response to this miniaturization and thinning, when manufacturing semiconductor devices, the silicon wafer that has undergone the diffusion process and electrode wiring process is cut into chips for each semiconductor element, and The electrode lead is taken out from the aluminum electrode terminal to the external terminal to make it easier to handle, and it is further packaged for mechanical protection.

[0005] The mounting methods for these semiconductor elements usually include wire bonding, flip chip, film carrier, etc. In particular, the film carrier method is
It is promising for making devices smaller, thinner, or more dense.

A conventional semiconductor device will now be described with reference to FIG.

As shown in FIG. 8, an electrode terminal 2 provided on a semiconductor element 1 is provided with a metal protrusion 3. As shown in FIG. In addition, a film carrier 4 made of polyimide with a certain width is used.
has a metal lead terminal 6 coated with electrolytic gold plating 5.
is installed. When connecting the metal lead terminals 6 to the metal protrusions 3, the reliability of the connection points is increased because the connections are made all at once regardless of the number of electrode terminal switches. Furthermore, since the metal protrusions 3 and lead terminals 6 provided on the electrode terminals 2 of the semiconductor element 1 have a breaking strength of 40 g or more, the semiconductor element 1 can be connected only with the metal protrusions 3 and the lead terminals 6.

Furthermore, the semiconductor element 1 and lead terminals 6
By simply applying a protective coat 7 on top, it can be mounted on equipment and can be used as smaller, thinner packaging.

As mentioned above, the film carrier method is
Since it can be made smaller and thinner, has highly reliable packaging, and can be handled in the form of a long tape, it is very easy to operate as a method for mounting semiconductor elements.

0010

However, this film carrier method has a problem in the formation of metal protrusions on the electrode terminals of the semiconductor element.

That is, a multilayer metal layer called a barrier metal is provided on the electrode terminal of a semiconductor element, and the metal protrusion is provided on this multilayer metal layer by electrolytic plating.

[0012] Complicated processes such as vapor deposition, photolithography, and plating to form this multilayer metal layer not only reduce the yield of semiconductor devices but also significantly increase costs.

Furthermore, with regard to semiconductor elements for driving liquid crystal displays, the density of semiconductor elements is increasing due to the higher definition of displays and the miniaturization of devices, and the metal protrusions on the electrode terminals of conventional semiconductor elements are increasing. With this method, there is a limit to the size of the metal protrusions, and in the production of film carriers, the conductor leads are formed by etching, which poses the problem of not being able to accommodate the high density of electrode terminal arrangements on semiconductor devices. There is.

The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing a semiconductor device that can reduce costs and accommodate higher density.

[Configuration of the invention]

[0016]

[Means for Solving the Problems] A method for manufacturing a semiconductor device of the present invention includes forming conductive leads on an insulating film by electrolytic plating, and forming conductive leads at positions corresponding to electrode terminals of a semiconductor element connected to the conductive leads. A metal protrusion is formed on the semiconductor element, and the metal protrusion is connected to the electrode terminal of the semiconductor element.

[0017]

[Operation] The present invention uses electrolytic plating to form metal protrusions at positions corresponding to the electrode terminals of the semiconductor element on the conductor leads formed on the insulating film. Since there is no need to form protrusions, the manufacturing yield of semiconductor devices is improved, and since general semiconductor devices can be used, costs can be reduced. Furthermore, in order to increase the density of the electrode terminal arrangement of semiconductor devices, the size of metal protrusions on the electrode terminals of semiconductor devices is not limited. Because it is formed, it can be easily accommodated.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the method for manufacturing a semiconductor device according to the present invention will be described below with reference to the drawings.

In FIG. 1, reference numeral 11 denotes a semiconductor element to be mounted, and an electrode terminal 12 is provided on the surface of this semiconductor element 11. A protective passivation film 13 made of (SiN) is formed.

Further, 14 is a film carrier made of polyimide or the like which is a long insulating film, and this film carrier 14 has conductor leads 15 made of copper (Cu), for example.
is formed by electrolytic plating, and this conductor lead 15
Similarly, metal protrusions 16 made of gold (Au) are formed by electrolytic plating in correspondence to the positions of the electrode terminals 12 . Furthermore, the conductor lead 15 and the metal protrusion 16 include
Electrolytic gold plating 17 is formed.

The metal protrusion 16 is electrically connected to the conductor lead 15 via the electrolytic gold plating 17. Furthermore, a hole 18 is formed in the film carrier 14, and a protective coat 19 is provided near the hole 18. Then, as a package, it becomes a semiconductor device.

Next, a method for manufacturing the above semiconductor device will be explained with reference to FIGS. 2 to 7.

First, as shown in FIG. 2, a first plating resist is applied onto the film carrier 14, and exposed and developed using a mask (not shown) for forming the conductor leads 15, thereby forming a first plating resist pattern. Form 21.

Next, as shown in FIG. 3, copper conductor leads 15 are formed on the film carrier 14 by electrolytic plating.

Then, as shown in FIG. 4, the conductor lead 1
5 and the first plating resist pattern 21, the electrode terminal 1 of the semiconductor element 11 to be mounted on the conductor lead 15 is
A second plating resist pattern 23 having a space 22 in which a metal protrusion 16 is formed is formed corresponding to the position No. 2.

Then, as shown in FIG. 5, a conductive lead 15 is placed in the space 22 of the second plating resist pattern 23.
A gold electrode protrusion 16 is formed by electrolytic plating so as to be electrically connected to the gold electrode protrusion 16.

Thereafter, as shown in FIG. 6, holes 18 and positioning holes (not shown) are formed in the film carrier 14 by etching, and the first plating resist pattern 21 and the second plating resist pattern 2 are formed in the film carrier 14 by etching.
Remove 3.

Furthermore, as shown in FIG.
Electrolytic gold plating 17 is applied to the surfaces of 5 and electrode protrusions 16 to prevent copper corrosion and the like.

Then, the electrode protrusions formed on the conductor leads are positioned on the electrode terminals 12 of the semiconductor element 11 through the electrolytic gold plating 17 and bonded by heating and pressurizing, as shown in FIG.
As shown in FIG. 2, a thin protective coat 19 is applied to the surface of the semiconductor element 11 to complete the package.

[0030]

According to the method of manufacturing a semiconductor device of the present invention, metal protrusions are formed by electrolytic plating at positions corresponding to electrode terminals of a semiconductor element on conductor leads formed on an insulating film. Since there is no need to form metal protrusions directly on semiconductor elements as in the past, the manufacturing yield of semiconductor elements can be improved, and since general semiconductor elements can be used, costs can be reduced. Can be done. Furthermore, in order to increase the density of the electrode terminal arrangement of semiconductor elements, the size of metal protrusions on the electrode terminals of semiconductor elements is not limited, and even in the production of film carriers, conductor leads can be formed by electrolytic plating. Therefore, it can be easily handled.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an embodiment of a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view showing one step in manufacturing the semiconductor device.

FIG. 3 is a cross-sectional view showing the next step in FIG. 2 in manufacturing the semiconductor device.

FIG. 4 is a cross-sectional view showing the next step in FIG. 3 in manufacturing the semiconductor device.

FIG. 5 is a cross-sectional view showing the next step in FIG. 4 in manufacturing the semiconductor device.

FIG. 6 is a cross-sectional view showing the next step in FIG. 5 in manufacturing the semiconductor device.

FIG. 7 is a cross-sectional view showing the next step in FIG. 6 in manufacturing the semiconductor device.

FIG. 8 is a cross-sectional view showing a conventional semiconductor device.

[Explanation of symbols]

11 Semiconductor element 12 Electrode terminal 14 Film carrier 1 as an insulating film
5 Conductor lead 16 Metal protrusion

Claims (1)

[Claims] 1. A conductor lead is formed on an insulating film by electrolytic plating, a metal protrusion is formed on the conductor lead at a position corresponding to an electrode terminal of a semiconductor element to be connected, and the metal protrusion is connected to the semiconductor element. 1. A method of manufacturing a semiconductor device, the method comprising connecting to an electrode terminal of a semiconductor device.