JPH0431869A - Electrophotographic sensitive body consisting of selenium and tellurium - Google Patents
Electrophotographic sensitive body consisting of selenium and telluriumInfo
- Publication number
- JPH0431869A JPH0431869A JP13725790A JP13725790A JPH0431869A JP H0431869 A JPH0431869 A JP H0431869A JP 13725790 A JP13725790 A JP 13725790A JP 13725790 A JP13725790 A JP 13725790A JP H0431869 A JPH0431869 A JP H0431869A
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- arsenic
- selenium
- concn
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 23
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title claims abstract description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 6
- 239000011669 selenium Substances 0.000 title claims abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 22
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 10
- 239000000460 chlorine Substances 0.000 claims abstract description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 108091008695 photoreceptors Proteins 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 7
- 230000007613 environmental effect Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000002513 implantation Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 101150069548 ppan gene Proteins 0.000 description 1
- 229940082569 selenite Drugs 0.000 description 1
- MCAHWIHFGHIESP-UHFFFAOYSA-L selenite(2-) Chemical compound [O-][Se]([O-])=O MCAHWIHFGHIESP-UHFFFAOYSA-L 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は電子写真用セレンテルル系感光体特に耐環境特
性の向上に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a selenite photoreceptor for electrophotography, particularly to improvement of environmental resistance characteristics.
（従来技術とその問題点）
機能分離形セレンテルル感光体、例えば第１図に示すよ
うな導電性基体（１１上にセレン−テルル−塩素系から
なる電荷移動層（２）を形成し、更にその上にセレン−
テルルからなる電荷発生層（３）を形成してなるセレン
、テルル系感光体は、光感度にすぐれるため現在でも電
子写真装置に広く利用されている。(Prior art and its problems) A functionally separated selenium-tellurium photoreceptor, for example, a conductive substrate (11) as shown in FIG. selenium on top
A selenium-tellurium photoreceptor having a charge generation layer (3) made of tellurium is still widely used in electrophotographic devices because of its excellent photosensitivity.
しかしながらセレン−テルル感光体は周知のように耐高
温性、耐高湿性など、いわゆる環境保存性において有機
感光体その他の感光体に比べ大きく劣る欠点をもつ。ま
た感光体表面に異物の付着、或いは接触かあると、容易
にアモルファス状態から結晶状態に移行して、感光体と
しての特性を維持できなくなる欠点がある。However, as is well known, selenium-tellurium photoreceptors have the disadvantage that they are significantly inferior to organic photoreceptors and other photoreceptors in so-called environmental preservation properties such as high temperature resistance and high humidity resistance. Furthermore, if foreign matter adheres to or comes into contact with the surface of the photoreceptor, it easily transitions from an amorphous state to a crystalline state, making it impossible to maintain the characteristics of a photoreceptor.
そこで上記の欠点の改善を図るため、第１図の電荷発生
層（３）または全層に亘ってヒ素を添加する試みがなさ
れているか、しかしこの方法では暗減衰の増大や残留電
位の上昇を招く。従ってヒ素添加濃度の制限、ヒ素添加
層の膜厚の制限等の考慮か必要になるため、充分な環境
保存性の向上効果を発揮できない。しかもヒ素を添加し
ないセレン−テルル感光体であっても、高温時（特に３
５°Ｃ以上）において劣化して暗減衰を増大するため、
前記ヒ素の添加にもとづく更なる暗減衰の増大は、表面
電位の低下を著しく助長して電気的特性を悪化させるこ
とになる。Therefore, in order to improve the above-mentioned drawbacks, attempts have been made to add arsenic to the charge generation layer (3) in Figure 1 or to the entire layer. invite Therefore, consideration must be given to limiting the concentration of arsenic added and limiting the thickness of the arsenic added layer, so that a sufficient effect of improving environmental preservation cannot be achieved. Moreover, even if the selenium-tellurium photoreceptor does not contain arsenic, the
5°C or higher) and increase dark decay.
Further increase in dark decay due to the addition of arsenic significantly promotes a decrease in surface potential and deteriorates electrical characteristics.
（発明の目的）
本発明はヒ素の添加によっても表面電位の低下の少ない
、感光体の実現を目的としてなされたものである。(Object of the Invention) The present invention has been made for the purpose of realizing a photoreceptor in which the surface potential decreases little even when arsenic is added.
（問題点を解決するための本発明の手段）機能分離型感
光体においては、半導体基体から電荷発生層に電荷の注
入が行われて表面電位が変化し、しかもこの注入量はヒ
素の添加量によって変化する。従って何等かの手段によ
り上記のような半導体基体からの電荷の注入を開園でき
ればヒ素の添加にもとづく表面電位の低下を制限するこ
とかてきる。本発明は以上から着想されたものであって
、本発明の特徴とするところは次の点にある。即ち、第
２図に示すように導電性基体（１）上に樹脂絶縁層（４
）を形成すると共に、その材質膜厚などの選定により、
半導体基体（１）から電荷発生層（３）への電荷の注入
量を制限するようにして、ヒ素の添加にもとづく電気的
特性への影響による表面電位の低下を制限するようにし
たことを特徴ずとるものである。(Means of the present invention for solving the problem) In a functionally separated photoreceptor, charge is injected from the semiconductor substrate into the charge generation layer, and the surface potential changes. It changes depending on. Therefore, if the injection of charge from the semiconductor substrate as described above can be achieved by some means, it will be possible to limit the decrease in surface potential due to the addition of arsenic. The present invention was conceived based on the above, and the features of the present invention are as follows. That is, as shown in FIG. 2, a resin insulating layer (4
), and by selecting the material, film thickness, etc.
A feature is that the amount of charge injected from the semiconductor substrate (1) to the charge generation layer (3) is limited to limit the decrease in surface potential due to the effect on electrical characteristics due to the addition of arsenic. It is something that takes everything.
このようにすれは、高温時の劣化にもとつく暗減衰の増
大による、表面電位の顕著な低下に更に加わるヒ素の添
加による表面電位の低下は制限される。従って、電気的
特性、環境保存性共にすぐれたセレンテルル感光体を得
ることか可能になる。In this way, the decrease in surface potential due to the addition of arsenic, which is in addition to the significant decrease in surface potential due to the increase in dark decay due to deterioration at high temperatures, is limited. Therefore, it is possible to obtain a selenium tellurium photoreceptor with excellent electrical properties and environmental preservation properties.
以下に実施例によって本発明を具体的に説明する。The present invention will be specifically explained below using Examples.
（実施例）
ベンゼンに溶解したＰＶＫ （ポリビニールカルバゾー
ル）を第２図の樹脂絶縁層（４）の形成材として用いて
、アルミニウム製導電製基体（１）上に膜厚０．０１．
０．１．０．５．１．０μの樹脂絶縁層（４）を形成し
、この上にセレン−テルル−塩素（テルル４９６、塩素
３０ｐｐｍ）からなる電荷移動層（２）とセレンテルル
感光体（テルル１２％、ヒ素１％）からなる電荷発生層
（３）を順次積層した１〜４の評価サンプルを試作した
。またこれと同時にヒ素の添加かあっても樹脂絶縁層（
４）のない（膜厚０）比較例１と、無樹脂絶縁層であっ
て、セレン−テルル−塩素（テルル４％、塩素３０１）
Ｉ）［１１）からなる電荷移動層（２）と、セレン−テ
ルル（テルル１２％）からなる電荷発生層（３）を備え
た、ヒ素の添加のない比較例２を試作した。(Example) PVK (polyvinyl carbazole) dissolved in benzene was used as a forming material for the resin insulating layer (4) shown in FIG. 2, and a film thickness of 0.01.
A resin insulating layer (4) with a thickness of 0.1.0.5.1.0μ is formed, and a charge transfer layer (2) made of selenium-tellurium-chlorine (tellurium 496, chlorine 30 ppm) and a selenium-tellurium photoreceptor ( Evaluation samples 1 to 4 were experimentally produced in which charge generation layers (3) made of (12% tellurium, 1% arsenic) were sequentially laminated. Also, even if arsenic is added at the same time, the resin insulation layer (
Comparative Example 1 without 4) (film thickness 0) and non-resin insulating layer with selenium-tellurium-chlorine (tellurium 4%, chlorine 301)
I) Comparative Example 2 without the addition of arsenic was produced, which included a charge transfer layer (2) made of [11] and a charge generation layer (3) made of selenium-tellurium (12% tellurium).
そしてこれらの感光体を通常の電子写真装置に装着して
、残留電位２表面電位の低下量などの各種の電気特性の
測定と１００枚の画像試験を実施したところ第１表の結
果を得た。These photoreceptors were then installed in a normal electrophotographic device, and various electrical properties such as the amount of decrease in residual potential 2 and surface potential were measured, and an image test was conducted on 100 images, and the results shown in Table 1 were obtained. .
第１表から明らかなように樹脂絶縁層を設けた感光体は
比較例２に示した通常のセレン−テルル感光体に比べて
若干残留電位の上昇は見られるが、例えばサンプルＮα
３と比較例２とを対比して明らかなように膜厚を選定す
ることにより、表面電位の低下量を少なくてきる。As is clear from Table 1, the residual potential of the photoreceptor provided with the resin insulating layer is slightly increased compared to the normal selenium-tellurium photoreceptor shown in Comparative Example 2, but for example, sample Nα
Comparing Example 3 and Comparative Example 2, it is clear that by selecting the film thickness, the amount of decrease in surface potential can be reduced.
また１００枚の画像試験後、５０°Ｃ１６０％Ｒ）ｌの
環境において放置試験を実施したところ、ヒ素の添加の
ない比較例界２は表面か白濁し、感光特性も失われてい
たか、ヒ素を添加した評価サンプル１〜４および比較例
１は外観、電気特性共に変化しないことか明らかにされ
た。In addition, after testing 100 images, we conducted a storage test in an environment of 50°C and 160% R), and found that the surface of Comparative Example 2, which had no arsenic added, became cloudy and the photosensitivity was lost. It was revealed that the added evaluation samples 1 to 4 and Comparative Example 1 did not change in appearance or electrical properties.
また電荷移動層をセレン−テルル−塩素とし、そのテル
ル濃度を２〜８％、塩素濃度を１０〜１００ｐｐａｎ、
電荷発生層をセレン−テルル−ヒ素とし、そのテルル濃
度を５〜２０％、ヒ素濃度を０．１〜５％とした感光体
に本発明を適用した場合についても、実用上所要の電気
的特性を得なから耐環境性を向上できることが確かめら
れた。In addition, the charge transfer layer is made of selenium-tellurium-chlorine, the tellurium concentration is 2 to 8%, the chlorine concentration is 10 to 100 ppan,
Even when the present invention is applied to a photoreceptor in which the charge generation layer is made of selenium-tellurium-arsenic and the tellurium concentration is 5 to 20% and the arsenic concentration is 0.1 to 5%, the electrical characteristics required for practical use can be achieved. It has been confirmed that environmental resistance can be improved without having to obtain
また樹脂絶縁層（２）の材料として、以上のＰＶＣの他
にＰＣ（ポリカーボネート）を用いた場合について実験
したか、同等の結果か得られた。Furthermore, experiments were conducted using PC (polycarbonate) in addition to the above-mentioned PVC as the material for the resin insulating layer (2), and similar results were obtained.
（発明の効果）
以上から明らかなように本発明によれば、ヒ素の添加に
よる耐環境性の向上を、感光体として要求される電気的
特性をほぼ維持しながら行うことかてきるすぐれた効果
を得られるもので、複写機等の電子写真装置の市場での
実用性は極めて高い。(Effects of the Invention) As is clear from the above, according to the present invention, the excellent effect of improving environmental resistance through the addition of arsenic while substantially maintaining the electrical characteristics required for a photoreceptor is achieved. Therefore, the practicality of electrophotographic devices such as copying machines in the market is extremely high.
第１図は従来の感光体の説明図、第２図は本発明の詳細
な説明図である。
（１）・・・導電性基体、 （２）・・・電荷移動層、
（３）・・・電荷発生層、 （４）樹脂絶縁層。FIG. 1 is an explanatory diagram of a conventional photoreceptor, and FIG. 2 is a detailed explanatory diagram of the present invention. (1)... Conductive substrate, (2)... Charge transfer layer,
(3)...charge generation layer, (4) resin insulating layer.
Claims (1)
層を順次積層した電子写真用セレンテルル感光体におい
て、 前記導電性基体上に樹脂絶縁層を設けると共にその膜厚
を０．０１〜０．５μ、 電荷移動層をセレン−テルル−塩素とし、そのテルル濃
度を２〜８％、塩素濃度を１０〜１００ｐｐｍ、電荷発
生層をセレン−テルル−ヒ素とし、そのテルル濃度を５
〜２０％、ヒ素濃度を０．１〜５％としたことを特徴と
する電子写真用セレンテルル感光体。[Scope of Claims] A selenium tellurium photoreceptor for electrophotography in which a charge transfer layer and an arsenic-doped charge generation layer are sequentially laminated on a conductive substrate, comprising: providing a resin insulating layer on the conductive substrate and adjusting the film thickness thereof; 0.01 to 0.5μ, the charge transfer layer is selenium-tellurium-chlorine, the tellurium concentration is 2-8%, the chlorine concentration is 10-100 ppm, the charge generation layer is selenium-tellurium-arsenic, and the tellurium concentration is 5
20% and an arsenic concentration of 0.1 to 5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2137257A JP2631413B2 (en) | 1990-05-29 | 1990-05-29 | Selentellur photoconductor for electrophotography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2137257A JP2631413B2 (en) | 1990-05-29 | 1990-05-29 | Selentellur photoconductor for electrophotography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0431869A true JPH0431869A (en) | 1992-02-04 |
| JP2631413B2 JP2631413B2 (en) | 1997-07-16 |
Family
ID=15194439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2137257A Expired - Fee Related JP2631413B2 (en) | 1990-05-29 | 1990-05-29 | Selentellur photoconductor for electrophotography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2631413B2 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60250357A (en) * | 1984-05-26 | 1985-12-11 | Konishiroku Photo Ind Co Ltd | Electrophotographic sensitive body |
| JPS6120046A (en) * | 1984-07-09 | 1986-01-28 | Fuji Electric Co Ltd | Photosensitive body for electrophotography |
| JPS6152651A (en) * | 1984-08-23 | 1986-03-15 | Fuji Electric Co Ltd | Selenium photosensitive body for electrophotography |
| JPS61204637A (en) * | 1985-03-04 | 1986-09-10 | ゼロツクス コーポレーシヨン | Multi-layer type image forming member |
| JPS61273550A (en) * | 1985-05-25 | 1986-12-03 | リツエンツイア・パテント−フエルヴアルツングス−ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Recording material for xerography |
| JPS6249357A (en) * | 1985-08-29 | 1987-03-04 | Ricoh Co Ltd | Electrophotographic sensitive body |
-
1990
- 1990-05-29 JP JP2137257A patent/JP2631413B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60250357A (en) * | 1984-05-26 | 1985-12-11 | Konishiroku Photo Ind Co Ltd | Electrophotographic sensitive body |
| JPS6120046A (en) * | 1984-07-09 | 1986-01-28 | Fuji Electric Co Ltd | Photosensitive body for electrophotography |
| JPS6152651A (en) * | 1984-08-23 | 1986-03-15 | Fuji Electric Co Ltd | Selenium photosensitive body for electrophotography |
| JPS61204637A (en) * | 1985-03-04 | 1986-09-10 | ゼロツクス コーポレーシヨン | Multi-layer type image forming member |
| JPS61273550A (en) * | 1985-05-25 | 1986-12-03 | リツエンツイア・パテント−フエルヴアルツングス−ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Recording material for xerography |
| JPS6249357A (en) * | 1985-08-29 | 1987-03-04 | Ricoh Co Ltd | Electrophotographic sensitive body |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2631413B2 (en) | 1997-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |