JPH04315764A - Lamp - Google Patents

Lamp

Info

Publication number
JPH04315764A
JPH04315764A JP10887291A JP10887291A JPH04315764A JP H04315764 A JPH04315764 A JP H04315764A JP 10887291 A JP10887291 A JP 10887291A JP 10887291 A JP10887291 A JP 10887291A JP H04315764 A JPH04315764 A JP H04315764A
Authority
JP
Japan
Prior art keywords
layer
refractive index
bulb
lamp
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10887291A
Other languages
Japanese (ja)
Inventor
Mitsuaki Minato
湊 光朗
Yukio Omi
近江 幸男
Yoshikane Sakamoto
好謙 坂本
Yukio Ono
幸雄 大野
Hisashi Miyashita
宮下 恒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Hitachi Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd, Hitachi Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP10887291A priority Critical patent/JPH04315764A/en
Publication of JPH04315764A publication Critical patent/JPH04315764A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To prevent a dielectric multilayer film from being peeled from the surface of the bulb of a lamp without affecting the optical characteristic of the lamp. CONSTITUTION:A dielectric multilayer film 9 is formed via a buffer layer 8 on the outside of the bulb 2 of a lamp by deposition or dipping method, etc. The buffer layer 8 is such that stress (tensile stress) generated between the layer 8 and the surface of the bulb 2 is smaller than that which may be generated if a transparent dielectric layer of a high refractive index is directly formed on the surface of the bulb; also, the dielectric multilayer film 9 comprises a transparent dielectric layer 9a of a high refractive index laid over a transparent dielectric layer 9b of a low refractive index.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明はバルブ表面に赤外線カッ
トフィルタ等の被膜を形成したランプに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lamp having a coating such as an infrared cut filter formed on the bulb surface.

【0002】0002

【従来の技術】バルブの表面に蒸着法やディッピング法
によって、酸化チタン等の高屈折率誘電体層と酸化珪素
等の低屈折率誘電体層とを交互に積層し、所定の波長領
域の光(赤外線)の透過を阻止するようにしたランプが
、特開昭57−119454号公報或いは特開昭61−
190853号公報等に提案されている。
[Prior Art] A high refractive index dielectric layer such as titanium oxide and a low refractive index dielectric layer such as silicon oxide are alternately laminated on the surface of a bulb by vapor deposition or dipping. A lamp designed to prevent the transmission of (infrared rays) is disclosed in Japanese Patent Application Laid-open No. 57-119454 or Japanese Patent Application Laid-Open No. 61-1989.
It has been proposed in Publication No. 190853 and the like.

【0003】0003

【発明が解決しようとする課題】上述したランプにおい
て、所定波長の光の選択透過性或いは選択反射性等の光
学特性を高めるには、被膜を構成する誘電体層の層数を
増すことが必要になる。しかしながら、層数を増すとバ
ルブ表面と第1層目の高屈折率誘電体層との間で剥離が
生じやすい。
[Problem to be Solved by the Invention] In the above-mentioned lamp, in order to improve optical properties such as selective transmission or selective reflection of light of a predetermined wavelength, it is necessary to increase the number of dielectric layers constituting the coating. become. However, as the number of layers increases, peeling tends to occur between the bulb surface and the first high refractive index dielectric layer.

【0004】そこで、誘電体層を形成するための塗布液
中に燐(P)を添加することが考えられているが、この
ようにすると高屈折率誘電体層の屈折率が下がり、所期
の光学特性が得られなくなる。
[0004] Therefore, it has been considered to add phosphorus (P) to the coating solution for forming the dielectric layer, but this would lower the refractive index of the high refractive index dielectric layer and prevent the desired result. optical properties cannot be obtained.

【0005】[0005]

【課題を解決するための手段】上記課題を解決すべく本
発明は、石英或いはガラスからなるバルブ表面に高屈折
率の透明誘電体層と低屈折率の透明誘電体層とを積層し
た被膜を形成したランプにおいて、前記バルブ表面と被
膜の第1層目を構成する高屈折率の透明誘電体層との間
には、バルブ表面との間に発生する応力がバルブ表面に
直接高屈折率の透明誘電体層を形成した場合に発生する
応力よりも小さくなるバッファ層を介設した。
[Means for Solving the Problems] In order to solve the above problems, the present invention provides a coating in which a transparent dielectric layer with a high refractive index and a transparent dielectric layer with a low refractive index are laminated on the surface of a bulb made of quartz or glass. In the formed lamp, the stress generated between the bulb surface and the high refractive index transparent dielectric layer constituting the first layer of the coating is applied directly to the bulb surface. A buffer layer was interposed to reduce the stress that would occur when a transparent dielectric layer was formed.

【0006】[0006]

【作用】バルブ表面と被膜の第1層目を構成する高屈折
率の透明誘電体層との間に、バッファ層を介設すること
で、バルブと誘電体層の熱膨張率の差等に起因して生じ
る応力を緩和することができる。
[Operation] By interposing a buffer layer between the bulb surface and the transparent dielectric layer with a high refractive index that constitutes the first layer of the coating, the difference in thermal expansion coefficient between the bulb and the dielectric layer can be compensated for. The resulting stress can be alleviated.

【0007】[0007]

【実施例】以下に本発明の実施例を添付図面を参照して
説明する。ここで、図1は本発明に係るランプの全体図
、図2は同ランプの要部拡大断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is an overall view of a lamp according to the present invention, and FIG. 2 is an enlarged sectional view of a main part of the lamp.

【0008】ランプ1(ハロゲンランプ)は石英或いは
ガラスからなるバルブ2内にフィラメント3、内部リー
ド線4及びビーズ5を設け、内部リード線4と外部リー
ド線6とをモリブデン箔7で接続している。
The lamp 1 (halogen lamp) has a filament 3, an internal lead wire 4, and a bead 5 disposed inside a bulb 2 made of quartz or glass, and the internal lead wire 4 and the external lead wire 6 are connected with a molybdenum foil 7. There is.

【0009】そして、バルブ2の外側にはバッファ層8
を介して誘電体多層被膜9を蒸着法或いはディッピング
法等によって形成している。ディッピング法の場合にお
いて、その塗布後の焼成処理は、塗布後バルブを点灯し
て電圧制御することによって温度をコントロールし、エ
ージングを兼ねる方法を講じることもできる。
A buffer layer 8 is provided on the outside of the valve 2.
A dielectric multilayer film 9 is formed by a vapor deposition method, a dipping method, or the like. In the case of the dipping method, the baking treatment after coating can be performed by lighting a bulb after coating and controlling the voltage to control the temperature, which also serves as aging.

【0010】ここで、バッファ層8はバルブ2表面との
間に発生する応力(引張り応力)がバルブ表面に直接高
屈折率の透明誘電体層を形成した場合に発生する応力よ
りも小さくなるものとする。そのためには、適用するバ
ッファ層の材料、その膜厚、焼成温度、焼成時間を適宜
選択して形成すればよい。
Here, the buffer layer 8 is made of a material whose stress (tensile stress) generated between the buffer layer 8 and the surface of the bulb 2 is smaller than the stress generated when a transparent dielectric layer with a high refractive index is directly formed on the bulb surface. shall be. For this purpose, the material of the buffer layer to be applied, its film thickness, firing temperature, and firing time may be appropriately selected and formed.

【0011】また誘電体多層被膜9は高屈折率の透明誘
電体層9aと低屈折率の透明誘電体層9bとを積層して
なり、高屈折率の透明誘電体層9aとしては酸化チタン
(TiO2)、低屈折率の透明誘電体層9bとしては酸
化珪素(SiO2)が挙げられる。
The dielectric multilayer coating 9 is formed by laminating a transparent dielectric layer 9a with a high refractive index and a transparent dielectric layer 9b with a low refractive index, and the transparent dielectric layer 9a with a high refractive index is made of titanium oxide ( TiO2) and silicon oxide (SiO2) as the low refractive index transparent dielectric layer 9b.

【0012】次に具体的な実施例と比較例を挙げて本発
明の効果を明確にする。
Next, specific examples and comparative examples will be given to clarify the effects of the present invention.

【0013】(実施例1)酸化珪素膜形成用の塗布液(
東京応化工業製MOF)を使用し、ディッピング法で膜
厚200nmの膜を石英バルブ表面に形成した後、焼成
炉内において500℃で30分間加熱分解してバッファ
層を得た。そして、このバッファ層の表面に同じくディ
ッピング法によって第1層目として屈折率が2.20の
酸化チタンを125nmの厚さで形成し、焼成炉内にお
いて500℃で30分間焼成した。次いで、同様にして
第2層目として屈折率が1.45の酸化珪素を190n
mの厚さで形成し、焼成炉内において500℃で30分
間焼成した。そしてこの組み合わせを第7層目の酸化チ
タンまで繰返し、第8層目の酸化珪素の厚みを95nm
として誘電体多層被膜を完成させた。以上の層構造を(
表1)に示す。
(Example 1) Coating liquid for forming silicon oxide film (
A film with a thickness of 200 nm was formed on the surface of the quartz bulb by dipping using MOF manufactured by Tokyo Ohka Kogyo Co., Ltd., and then thermally decomposed at 500° C. for 30 minutes in a firing furnace to obtain a buffer layer. Then, a first layer of titanium oxide having a refractive index of 2.20 was formed to a thickness of 125 nm on the surface of this buffer layer by the same dipping method, and was fired at 500° C. for 30 minutes in a firing furnace. Next, 190 nm of silicon oxide with a refractive index of 1.45 was formed as a second layer in the same manner.
The film was formed to have a thickness of m and was fired in a firing furnace at 500°C for 30 minutes. This combination is then repeated until the seventh layer of titanium oxide is reached, and the thickness of the eighth layer of silicon oxide is 95 nm.
As a result, we completed a dielectric multilayer coating. The above layer structure (
Table 1) shows the results.

【0014】[0014]

【表1】[Table 1]

【0015】尚、(表1)において中心波長とは反射率
が最も1に近くなる波長をいう。そして、(表1)の層
構造の誘電体多層被膜については剥離が見られず、更に
分光反射率は図3に示すように赤外線反射膜として良好
な特性を有していることが分る。
In Table 1, the center wavelength refers to the wavelength at which the reflectance is closest to 1. It can be seen that the dielectric multilayer coating having the layer structure shown in Table 1 shows no peeling, and has good spectral reflectance properties as an infrared reflective coating as shown in FIG.

【0016】(実施例2)酸化珪素膜形成用の塗布液(
東京応化工業製MOF)を使用し、ディッピング法で膜
厚190nmの膜を石英バルブ表面に形成した後、焼成
炉内において500℃で30分間加熱分解してバッファ
層を得た。そして、このバッファ層の表面に(表2)に
示すような層構造の誘電体多層被膜を形成した。尚、形
成した誘電体多層被膜は第1層から第8層までを中心波
長が1100nmの赤外線反射用とし、第9層から第1
6層までを中心波長が600nmの可視光制御用として
いる。このようにして得られた誘電体多層被膜は剥離し
にくく且つ分光特性は図4に示すように良好であった。
(Example 2) Coating liquid for forming silicon oxide film (
A film with a thickness of 190 nm was formed on the surface of the quartz bulb by a dipping method using MOF manufactured by Tokyo Ohka Kogyo Co., Ltd., and then thermally decomposed at 500° C. for 30 minutes in a firing furnace to obtain a buffer layer. Then, a dielectric multilayer coating having a layer structure as shown in Table 2 was formed on the surface of this buffer layer. Note that the formed dielectric multilayer coating has the first to eighth layers for infrared reflection with a center wavelength of 1100 nm, and the ninth to first layers for infrared reflection.
Up to six layers are used for visible light control with a center wavelength of 600 nm. The dielectric multilayer coating thus obtained was difficult to peel off and had good spectral characteristics as shown in FIG.

【0017】[0017]

【表2】[Table 2]

【0018】(実施例3)バッファ層を形成する塗布液
として酸化珪素膜形成用の塗布液(東京応化工業(株)
製、OCD  T−7)を用い、厚さ300nmのバッ
ファ層を形成し、このバッファ層の上に実施例1と同様
の8層構造の誘電体多層被膜を形成した。このようにし
て得られた誘電体多層被膜は剥離もなく、分光特性も図
3に示すように良好であった。
(Example 3) A coating solution for forming a silicon oxide film (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used as a coating solution for forming a buffer layer.
A buffer layer with a thickness of 300 nm was formed using OCD T-7) manufactured by OCD Corporation, and a dielectric multilayer film having an 8-layer structure similar to that in Example 1 was formed on this buffer layer. The dielectric multilayer coating thus obtained had no peeling and had good spectral characteristics as shown in FIG. 3.

【0019】(実施例4)前記実施例3と同様のバッフ
ァ層を形成した上に、実施例2と同様の16層構造の誘
電体多層被膜を形成した。このようにして得られた誘電
体多層被膜は剥離もなく、分光特性も図4に示すように
良好であった。
(Example 4) A dielectric multilayer film having a 16-layer structure as in Example 2 was formed on top of the same buffer layer as in Example 3. The dielectric multilayer coating thus obtained had no peeling and had good spectral characteristics as shown in FIG. 4.

【0020】(実施例5)焼成温度を140℃、焼成時
間を15分間とした以外は実施例1と同様にしてバッフ
ァ層を形成した後、実施例2と同様にして16層構造の
誘電体多層被膜を形成したところ、剥離現象は見られず
、分光特性も図3と同等の良好な結果であった。
(Example 5) After forming a buffer layer in the same manner as in Example 1 except that the firing temperature was 140° C. and the firing time was 15 minutes, a 16-layer dielectric was formed in the same manner as in Example 2. When a multilayer film was formed, no peeling phenomenon was observed, and the spectral characteristics were as good as those shown in FIG. 3.

【0021】(比較例1)バッファ層を形成せずに実施
例1と同じ8層構造の誘電体多層被膜を形成しようとし
たところ、第6層目の酸化珪素層を形成し、500℃か
らの冷却時に石英バルブと第1層との界面から剥離が生
じ、それ以上積層することができなかった。
(Comparative Example 1) When an attempt was made to form a dielectric multilayer film with the same 8-layer structure as in Example 1 without forming a buffer layer, a silicon oxide layer was formed as the sixth layer, and the temperature was increased from 500°C. During cooling, peeling occurred from the interface between the quartz bulb and the first layer, making it impossible to stack any more layers.

【0022】(比較例2)酸化珪素膜形成用塗布液及び
酸化チタン膜形成用塗布液として、それぞれリン(P)
を添加して成る東京応化工業(株)製、MOF  P−
Si−Film  P−80210及びMOF  P−
Ti−Film  P−60210を使用し、(表3)
に示すような8層構造で中心波長が1100nmになる
誘電体多層被膜を形成した。この時、酸化珪素膜の屈折
率は1.46、酸化チタンの屈折率は2.05に低下し
ていた。
(Comparative Example 2) Phosphorus (P) was used as a coating liquid for forming a silicon oxide film and a coating liquid for forming a titanium oxide film.
MOF P- manufactured by Tokyo Ohka Kogyo Co., Ltd. with the addition of
Si-Film P-80210 and MOF P-
Using Ti-Film P-60210, (Table 3)
A dielectric multilayer coating with an eight-layer structure and a center wavelength of 1100 nm was formed as shown in FIG. At this time, the refractive index of the silicon oxide film had decreased to 1.46, and that of titanium oxide had decreased to 2.05.

【0023】[0023]

【表3】[Table 3]

【0024】上記によって得られた誘電体多層被膜の光
学特性は図3に示すように実施例1に比較して赤外線反
射特性において、劣るものであった。また、実施例1と
同様の特性を得るには更に2層加えて10層にする必要
があった。
As shown in FIG. 3, the optical properties of the dielectric multilayer coating obtained above were inferior to those of Example 1 in terms of infrared reflection properties. Furthermore, in order to obtain the same characteristics as in Example 1, it was necessary to add two more layers to make ten layers.

【0025】(比較例3)酸化珪素膜形成用塗布液にリ
ン(P)を添加して成る東京応化工業(株)製、OCD
−80210を使用して、バルブ表面に直接実施例2と
同様の16層構造の誘電体多層被膜を形成しようとした
ところ、第12層目の酸化珪素層を形成し、500℃か
らの冷却時に石英バルブと第1層との界面から剥離が生
じ、それ以上積層することができなかった。尚、この時
に石英バルブの表面を荒す等の処理を行ってみたが、剥
離を防ぐことはできなかった。
(Comparative Example 3) OCD manufactured by Tokyo Ohka Kogyo Co., Ltd., which is made by adding phosphorus (P) to a coating solution for forming a silicon oxide film.
-80210 was used to directly form a dielectric multilayer coating with a 16-layer structure similar to that in Example 2 on the bulb surface, but a 12th layer of silicon oxide was formed, and upon cooling from 500°C. Peeling occurred from the interface between the quartz bulb and the first layer, making it impossible to stack any more layers. At this time, treatments such as roughening the surface of the quartz bulb were performed, but peeling could not be prevented.

【0026】(比較例4)バッファ層を形成する塗布液
としてジクロロシランとアンモニアの反応で得られるポ
リマー(東燃(株)製のポリシラザン)を用い、石英バ
ルブ上に厚さ200nmの膜を形成し、この膜の上に実
施例1と同様の8層構造の誘電体多層被膜を形成しよう
としたところ、第4層目の酸化珪素膜を塗布し、500
℃からの冷却時に石英バルブとバッファ層との界面から
両膜が剥離し、それ以上積層することができなかった。
(Comparative Example 4) A film with a thickness of 200 nm was formed on a quartz bulb using a polymer obtained by the reaction of dichlorosilane and ammonia (polysilazane manufactured by Tonen Corporation) as a coating solution for forming a buffer layer. When an attempt was made to form a dielectric multilayer film with an eight-layer structure similar to that in Example 1 on this film, a fourth layer of silicon oxide film was applied, and a
Both films peeled off from the interface between the quartz bulb and the buffer layer upon cooling from °C, making it impossible to stack them any further.

【0027】[0027]

【発明の効果】以上に説明したように本発明によれば、
バルブ表面と被膜の第1層目を構成する高屈折率の透明
誘電体層との間に、バルブ表面との間に発生する応力が
バルブ表面に直接高屈折率の透明誘電体層を形成した場
合に発生する応力よりも小さくなる層、具体的には熱膨
張係数がバルブよりも大きく且つ第1層目の高屈折率の
透明誘電体層よりも小さい層をバッファ層として介設し
たので、光学特性に影響を与えることなくバルブ表面か
ら誘電体多層被膜の剥離を防ぐことができる。
[Effects of the Invention] As explained above, according to the present invention,
The stress generated between the bulb surface and the high refractive index transparent dielectric layer that constitutes the first layer of the coating formed a high refractive index transparent dielectric layer directly on the bulb surface. A layer whose thermal expansion coefficient is larger than that of the bulb and smaller than the first layer, a transparent dielectric layer with a high refractive index, is interposed as a buffer layer, so that the stress is smaller than that of the first layer. It is possible to prevent the dielectric multilayer coating from peeling off from the bulb surface without affecting the optical properties.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明に係るランプの全体図[Fig. 1] Overall view of a lamp according to the present invention

【図2】同ランプの要部拡大断面図[Figure 2] Enlarged sectional view of the main parts of the lamp

【図3】波長と反射率との関係を示すグラフ[Figure 3] Graph showing the relationship between wavelength and reflectance

【図4】波
長と反射率との関係を示すグラフ
[Figure 4] Graph showing the relationship between wavelength and reflectance

【符号の説明】[Explanation of symbols]

1…ランプ、2…バルブ、8…バッファ層、9…誘電体
多層被膜、9a…高屈折率の透明誘電体層、9b…低屈
折率の透明誘電体層。
DESCRIPTION OF SYMBOLS 1... Lamp, 2... Bulb, 8... Buffer layer, 9... Dielectric multilayer coating, 9a... Transparent dielectric layer with high refractive index, 9b... Transparent dielectric layer with low refractive index.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  石英或いはガラスからなるバルブ表面
に高屈折率の透明誘電体層と低屈折率の透明誘電体層と
を積層した被膜を形成したランプにおいて、前記バルブ
表面と被膜の第1層目を構成する高屈折率の透明誘電体
層との間には、バルブ表面との間に発生する応力がバル
ブ表面に直接高屈折率の透明誘電体層を形成した場合に
発生する応力よりも小さくなるバッファ層を介設したこ
とを特徴とするランプ。
1. A lamp in which a coating film is formed on a bulb surface made of quartz or glass, in which a transparent dielectric layer with a high refractive index and a transparent dielectric layer with a low refractive index are laminated, wherein the bulb surface and a first layer of the coating are formed on the bulb surface. The stress generated between the transparent dielectric layer with a high refractive index that makes up the eye and the surface of the bulb is greater than the stress that would occur if a transparent dielectric layer with a high refractive index was formed directly on the bulb surface. A lamp characterized by interposing a buffer layer that becomes smaller.
【請求項2】  前記バッファ層を構成する材料は屈折
率がバルブの屈折率にほぼ等しいものを選定したことを
特徴とする請求項1に記載のランプ。
2. The lamp according to claim 1, wherein a material constituting the buffer layer is selected to have a refractive index approximately equal to the refractive index of the bulb.
JP10887291A 1991-04-12 1991-04-12 Lamp Withdrawn JPH04315764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10887291A JPH04315764A (en) 1991-04-12 1991-04-12 Lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10887291A JPH04315764A (en) 1991-04-12 1991-04-12 Lamp

Publications (1)

Publication Number Publication Date
JPH04315764A true JPH04315764A (en) 1992-11-06

Family

ID=14495732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10887291A Withdrawn JPH04315764A (en) 1991-04-12 1991-04-12 Lamp

Country Status (1)

Country Link
JP (1) JPH04315764A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3229259A1 (en) * 2016-03-31 2017-10-11 Toshiba Lighting & Technology Corporation Halogen lamp
JP2017188415A (en) * 2016-03-31 2017-10-12 東芝ライテック株式会社 Halogen lamp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3229259A1 (en) * 2016-03-31 2017-10-11 Toshiba Lighting & Technology Corporation Halogen lamp
JP2017188415A (en) * 2016-03-31 2017-10-12 東芝ライテック株式会社 Halogen lamp

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