JPH0431341A - Method for forming metal multilayered film on glass substrate - Google Patents
Method for forming metal multilayered film on glass substrateInfo
- Publication number
- JPH0431341A JPH0431341A JP13768890A JP13768890A JPH0431341A JP H0431341 A JPH0431341 A JP H0431341A JP 13768890 A JP13768890 A JP 13768890A JP 13768890 A JP13768890 A JP 13768890A JP H0431341 A JPH0431341 A JP H0431341A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- glass substrate
- soldering
- forming
- multilayer film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 30
- 239000002184 metal Substances 0.000 title claims abstract description 30
- 239000011521 glass Substances 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 11
- 238000005476 soldering Methods 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明はガラス基板の金属多層膜形成方法に関し、より
具体的にはガラス基板上に半田付けを可能にするための
金属多層膜の形成方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming a metal multilayer film on a glass substrate, and more specifically, a method for forming a metal multilayer film to enable soldering on a glass substrate. It is related to.
［従来の技術］
従来よりガラス基板は電子部品の分野において広く用い
られているが、近年ガラス基板に種々の機能を付加する
ために、半田付けが可能であることが要求されるように
なってきており、そのためガラス基板表面に金属多層膜
を形成し、その膜を介して半田付けが行われている。[Prior Art] Glass substrates have traditionally been widely used in the field of electronic components, but in recent years, in order to add various functions to glass substrates, it has become necessary to be able to solder them. Therefore, a metal multilayer film is formed on the surface of the glass substrate, and soldering is performed through the film.
この半田付は用金属多層膜の一種に、ガラス基板表面に
ガラスと密着性のよいＯｒ、Ｔｌ、Ｎｏ、Ｗ等の金属か
ら選ばれる最下層、半田の拡散を防止するＡＩ、Ｎｉ、
Ｐｄ等の金属から選ばれる中間層、半田濡れ性のよいＡ
ｕ、ＡｇＪｕ等の金属から選ばれる最上層をスパッタ、
真空蒸着法等により順次成膜することにより作製される
ものがある。このようにして作製される金属多層膜は半
田付けによる封着やワイヤ接続を可能にするものであり
、例えば液晶表示素子と駆動回路との接続部分、蛍光表
示管の電極あるいは太陽電池用の電極等に用いられる。This soldering is a type of metal multilayer film that uses a bottom layer selected from metals such as Or, Tl, No, and W that have good adhesion to the glass on the surface of the glass substrate, and a layer of AI, Ni, etc. that prevents solder diffusion.
Intermediate layer selected from metals such as Pd, A with good solder wettability
sputtering the top layer selected from metals such as u, AgJu, etc.
Some are manufactured by sequentially forming films using a vacuum evaporation method or the like. The metal multilayer film produced in this way enables sealing and wire connections by soldering, and is used, for example, at the connection part between a liquid crystal display element and a drive circuit, an electrode for a fluorescent display tube, or an electrode for a solar cell. Used for etc.
［発明が解決しようとする問題点］
一般にガラス基板に半田付けを可能にするためには、金
属膜表面に半田が拡散し得ることが重要であるが、その
一方で拡散し過ぎると半田がガラス基板表面まで到達し
、最下層の金属膜がこれに侵されて付着力が低下すると
いう問題が生じる。[Problems to be Solved by the Invention] Generally, in order to enable soldering to a glass substrate, it is important that the solder be able to diffuse onto the surface of the metal film, but on the other hand, if it diffuses too much, the solder will A problem arises in that it reaches the substrate surface and corrodes the metal film at the bottom layer, resulting in a decrease in adhesion.
それゆえ半田付は用金属多層膜は上記したように中間層
を有する構造となっており、半田の拡散の程度を調節す
るために半田拡散防止効果の大きいム１と、前記効果の
比較的小さいＮｉやＰｄ等を組み合わせて用いられるこ
とが多い。Therefore, the metal multilayer film used for soldering has a structure that has an intermediate layer as described above, and in order to adjust the degree of solder diffusion, the layer 1 has a large effect of preventing solder diffusion, and the layer 1 has a relatively small effect. It is often used in combination with Ni, Pd, etc.
しかしながらスパッタや真空蒸着により形成される金属
多層膜の端面部は各層の端面が露出しているために、該
端面部に水分が存在すると、膜構成金属間の電極電位差
によって電解腐食を起こすことがある。特にＡ１層を含
む場合、最上層に用いられるムＵ等との電極電位差が大
きいため、洗浄中や保管中に電解腐食を起こし易く、こ
れに起因してブリスターいわゆる表面フクレ等の欠陥が
発生するといった問題がある。However, since the end faces of each layer of a metal multilayer film formed by sputtering or vacuum evaporation are exposed, if moisture is present on the end faces, electrolytic corrosion may occur due to the electrode potential difference between the film's constituent metals. be. In particular, when the A1 layer is included, there is a large electrode potential difference with the uppermost layer such as MuU, so electrolytic corrosion is likely to occur during cleaning or storage, resulting in defects such as blisters, so-called surface blisters. There are problems like this.
本発明は上記事情に鑑みなされたもので、Ａ１層を有し
、膜形成後に電解腐食を起こすことのない半田付は用金
属多層膜をガラス基板上に形成する方法を提供すること
を目的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a method for forming a metal multilayer film on a glass substrate, which has an A1 layer and is suitable for soldering without causing electrolytic corrosion after the film is formed. do.
［問題点を解決するための手段］
本発明のガラス基板の金属多層膜形成方法は、ガラス基
板表面に、中間層としてＡ１層を含む半田付は用金属多
層膜を成膜した後、ＡＩ層露出部を酸化処理することを
特徴とする。[Means for Solving the Problems] The method for forming a metal multilayer film on a glass substrate of the present invention includes forming a metal multilayer film for soldering including an A1 layer as an intermediate layer on the surface of a glass substrate, and then depositing an AI layer on the surface of the glass substrate. It is characterized by subjecting the exposed portion to oxidation treatment.
［作用コ
本発明において、ガラス基板表面に金属多層膜を成膜し
た後、ＡＩ層露出部を熱処理あるいは酸素プラズマ処理
等により酸化処理すると、金属膜端面部に水分が存在し
ても、ＡＩがイオンとなって溶出しないために電解腐食
が起こらない〇なお熱処理により酸化処理する場合、Ａ
１層の羅出部が十分に酸化し得る適当な条件を設定して
行われるが、特に２２０〜２５０℃で４時間以上熱処理
することが好ましい。即ち２２０℃より熱処理温度が低
いとＡ１層露出部を短時間で十分に酸化させることがで
きず、２５０℃より高いと膜構成金属間で拡散が起こり
易くなるためであり、また熱処理時間が４時間より短い
場合も先記した効果が十分に得られない。[Function] In the present invention, after forming a metal multilayer film on the surface of a glass substrate, if the exposed portion of the AI layer is oxidized by heat treatment or oxygen plasma treatment, the AI will be removed even if moisture is present at the edge of the metal film. Electrolytic corrosion does not occur because it does not elute as ions. In addition, when oxidizing by heat treatment, A
The heat treatment is carried out under appropriate conditions that allow the exposed portion of one layer to be sufficiently oxidized, and it is particularly preferable to heat the heat treatment at 220 to 250°C for 4 hours or more. In other words, if the heat treatment temperature is lower than 220°C, the exposed portion of the A1 layer cannot be sufficiently oxidized in a short time, and if it is higher than 250°C, diffusion will easily occur between the film constituent metals. Even if it is shorter than the above-mentioned time, the above-mentioned effects cannot be sufficiently obtained.
また酸素プラズマ処理は、酸素ラジカルだけを用いて酸
化反応を行うものである。この処理による場合、通常プ
ラズマ処理装置を使用し、その酸素圧力は０．２”２．
０ｔｏｒｒ １高周波電力は２５０〜５００ｗ１電子密
度は１０１７〜１０１８／ｍ３であることが好ましい。Further, oxygen plasma treatment is a process in which an oxidation reaction is performed using only oxygen radicals. In the case of this treatment, a plasma treatment apparatus is usually used, and the oxygen pressure is 0.2"2.
It is preferable that 0 torr 1 high frequency power is 250 to 500w1 and electron density is 1017 to 1018/m3.
［実施例］
以下、実施例に基づいて本発明のガラス基板の金属多層
膜形成方法を説明する。[Example] Hereinafter, the method for forming a metal multilayer film on a glass substrate of the present invention will be described based on Examples.
（実施例１）
７０℃に保持した４０Ｘ２０Ｘ１ｍｍの大きさのガラス
基板に真空蒸着装置を用いてＣｒ、ＡＩ、旧、Ａｕを膜
厚がそれぞれ０．０５ｇｍ、０．１５μ厘、０．３μ履
、０．０５７℃膳となるように順次成膜した後、電気炉
中で２２０℃の温度で４時間熱処理して試料を得た。ま
た比較のために、熱処理を行わず、その他の条件はすべ
て上記と同様に処理した試料を作製した。(Example 1) Cr, AI, old, and Au were deposited on a glass substrate with dimensions of 40 x 20 x 1 mm held at 70° C. using a vacuum evaporation device, with film thicknesses of 0.05 gm, 0.15 μm, and 0.3 μm, respectively. After sequentially forming films at a temperature of 0.057°C, they were heat-treated in an electric furnace at a temperature of 220°C for 4 hours to obtain a sample. For comparison, a sample was prepared in which no heat treatment was performed and all other conditions were the same as above.
このようにして作製した２つの試料について耐湿試験を
行ったところ、比較のために作製した試料には電解腐食
が認められたのに対して、熱処理を施した試料には電解
腐食が全く認められなかった。When we conducted a moisture resistance test on the two samples prepared in this way, electrolytic corrosion was observed in the sample prepared for comparison, whereas no electrolytic corrosion was observed in the heat-treated sample. There wasn't.
なお、耐湿試験は６０℃、湿度９８％の条件下に７２時
間試料を保持した後、顕微鏡によりその表面を観察して
評価したものである。The moisture resistance test was performed by holding the sample under conditions of 60° C. and 98% humidity for 72 hours, and then observing the surface of the sample using a microscope.
（実施例２）
上記実施例と同様の条件でガラス基板上に０ｒ１Ａｌ、
旧、Ａｕを順次成膜した後、バレル型プラズマ処理装置
を用いて酸素圧力１ｔｏｒｒ、高周波電力３００ｗ。(Example 2) 0r1Al,
Previously, after sequentially forming Au films, a barrel-type plasma processing device was used to generate oxygen pressure of 1 torr and high-frequency power of 300 W.
電子密度１０１７／、３の条件で１０分間酸素プラズマ
処理を施し、試料を得た。Oxygen plasma treatment was performed for 10 minutes at an electron density of 1017/3 to obtain a sample.
このようにして得られた試料について実施例１と同様の
耐湿試験を行ったところ、電解腐食は全く認められなか
った。When the sample thus obtained was subjected to the same moisture resistance test as in Example 1, no electrolytic corrosion was observed.
［効果］
以上説明したように本発明のガラス基板の金属多層膜形
成方法によれば、Ａ１層を有する半田付は用金属膜の電
解腐食を防止することができ、これに起因するブリスタ
ー等の欠陥の発生を防ぐことが可能である。[Effect] As explained above, according to the method for forming a metal multilayer film on a glass substrate of the present invention, soldering with an A1 layer can prevent electrolytic corrosion of the metal film, and prevent blisters and the like caused by this. It is possible to prevent defects from occurring.
特許出願人 日本電気硝子株式会社 代表者 岸１）清作Patent applicant: Nippon Electric Glass Co., Ltd. Representative: Kishi 1) Kiyosaku
Claims (3)
田付け用金属多層膜を成膜した後、Ａ１層露出部を酸化
処理することを特徴とするガラス基板の金属多層膜形成
方法。(1) A method for forming a metal multilayer film on a glass substrate, which comprises forming a metal multilayer film for soldering including an A1 layer as an intermediate layer on the surface of a glass substrate, and then oxidizing the exposed portion of the A1 layer.
求の範囲第１項記載のガラス基板の金属多層膜形成方法
。(2) The method for forming a metal multilayer film on a glass substrate according to claim 1, wherein the oxidation treatment is a heat treatment.
する特許請求の範囲第１項記載のガラス基板の金属多層
膜形成方法。(3) The method for forming a metal multilayer film on a glass substrate according to claim 1, wherein the oxidation treatment is oxygen plasma treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13768890A JP2821239B2 (en) | 1990-05-28 | 1990-05-28 | Method for forming metal multilayer film on glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13768890A JP2821239B2 (en) | 1990-05-28 | 1990-05-28 | Method for forming metal multilayer film on glass substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0431341A true JPH0431341A (en) | 1992-02-03 |
| JP2821239B2 JP2821239B2 (en) | 1998-11-05 |
Family
ID=15204485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13768890A Expired - Fee Related JP2821239B2 (en) | 1990-05-28 | 1990-05-28 | Method for forming metal multilayer film on glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2821239B2 (en) |
-
1990
- 1990-05-28 JP JP13768890A patent/JP2821239B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2821239B2 (en) | 1998-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |