JPS60189118A - Method of forming conductive transparent thin film - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a method for forming a transparent vapor-deposited thin film having excellent conductivity and adhesion to a base material.

(Prior art) Semiconductor wafer storage containers, electronic and electrical components, and flooring, wall, and window materials for semiconductor manufacturing factories are used depending on their use.
It is necessary to have an antistatic effect. Containers and window materials that require the inside to be seen through must also be transparent.

Japanese Unexamined Patent Publication No. 50-119586 discloses a transparent plastic film having aluminum deposited on its surface in the form of a mesh. Although this film has an antistatic function, it is not completely transparent.

Therefore, it cannot be used for members that require complete transparency.

Japanese Unexamined Patent Publication No. 55-28022 discloses a conductive transparent thin film in which a platinum vapor-deposited film is formed on the surface of a base material. Since metals such as platinum are opaque, in order for the deposited film to be transparent, its thickness must be approximately 200 Å or less. In order to further impart conductivity to this, the thickness of the deposited film needs to be 100 to 200 mm thick. Since such a deposited film is very thin, the surface resistance of the base material is at most 10 5 to 10 6 Ω/sq, and the conductivity is poor. in this way.

Thin films deposited with metals such as platinum do not necessarily have sufficient conductivity or transparency. Furthermore, since the deposited film is thin, it has poor film strength and poor adhesion to the substrate. Therefore, it is easily damaged and easily peeled off.

On the other hand, a method is known in which a conductive oxide semiconductor such as tin oxide or indium oxide is deposited. According to this method, a thin film having a relatively excellent conductivity with a 2-surface resistance of 10 2 to 10 3 Ω/sq can be obtained.

Therefore, the vapor-deposited film obtained by this method is used for electrodes of solid-state displays and the like. However, the deposition conditions are unstable and the process is complicated.

It is extremely difficult to produce a film with excellent transparency and R-electrification with good reproducibility.

(Object of the Invention) An object of the present invention is to provide a method for forming a thin film having excellent conductivity and transparency and excellent adhesion to a base material. Another object of the present invention is to provide a transparent F with uniform conductivity.
An object of the present invention is to provide a method for forming a fi IIM. Still another object of the present invention is to provide a method for forming a thin film on the surface of a substrate that has excellent conductivity and transparency and also has excellent adhesion to the substrate without going through complicated steps. It is about providing. .

(Structure of the Invention) The method for forming a conductive transparent thin film of the present invention includes evaporating a mixture containing silicon oxide and a conductive material to form a deposited film on a substrate, thereby forming a deposited film on a substrate. The above objectives are achieved.

The conductive materials used in the method of the present invention mainly include:
metal is used. For example, gold.

These include platinum, silver, lead, palladium, and copper.

Only one type of these is used. Silicon oxide is a glass whose main component is silicon dioxide.

Borosilicate glass is preferred. "1. Conductivity + A I
A mixture of 'il powder and silicon oxide powder is used as the evaporation source material. Preferably.

This mixture is heated to an appropriate temperature between the melting point of the metal and the glass softening point of the silicon oxide, and the resulting sintered body is provided as an evaporation source material.

The vapor deposition is performed by, for example, an electron beam heating method, an ion plating method, a sputtering method, etc. in a high vacuum atmosphere. Although any of these methods can form a deposited thin film with a uniform composition on the substrate, the sputtering method is the most preferred because the variation in composition is particularly small.

The deposited thin film is formed on the substrate to a thickness of 100 to 5000 nm. The thickness of the film is appropriately selected depending on the purpose of use. Usually, 400 to 2000 people is preferred. Film thickness is 100
If it passes around more than 5,000 people, its conductivity will be poor, and if it passes more than 5,000 people, its transparency will be poor. For example, when a vapor-deposited thin film with a thickness of 1000 mm is formed on a transparent substrate using a mixture of borosilicate glass and silver with a root content of 5 to 15% by weight, the surface resistance value is 103 to 1OhΩ. /sq, and the total light transmittance in the visible region is 68 to 80%. Transparency and conductivity - This depends on the type of conductive material and its content, but if vapor deposition is carried out under the conditions of the present invention, a thin film having the above-mentioned good properties can be obtained.

Examples of base materials used in the present invention include glass and plastic. However, the present invention is not limited to this. Various substrates can be used, such as ceramics and cloth. If a transparent substrate is used, a sheet or plate with excellent transparency can be obtained. Because it contains silicon oxide, the deposited film formed using any of the above substrates has excellent adhesion to the substrate.

It is not necessary to perform a substrate surface treatment before performing vapor deposition or to protect the surface of a formed vapor-deposited film.

(Example) The present invention will be explained below using examples.

Example 1 A sintered body obtained by mixing 10 g of borosilicate glass powder and 0.5 g of silver powder as a conductive material and heating the mixture at about 1100° C. and cleaned quartz glass, 4y 44, were placed in a vacuum chamber. . The inside of the tank was evacuated to about 10 Torr, and the mixture was heated by electron beam heating to form a deposited film with a thickness of about 1,000 Torr on a quartz glass substrate. The surface resistance and total light transmittance in the visible region of the obtained film were measured. Furthermore, the adhesion test of the film was conducted according to the base peel test of JIsI]-0202. The results are shown in the table below. In the adhesion test item in the table, ◎ indicates that no peeling phenomenon was observed, and △ indicates that partial peeling was observed.

Disaster facility 1 Same as Example 1 except that 1.5 g of silver powder was used.

Carburization 1 Same as Example 1 except that 1.5 g of copper powder was used as the conductive material.

Inuden Charcoal ↓ Example 1 except that gold powder was used as the conductive material
It is similar to

, Sekai Njo The cleaned quartz glass substrate was placed in a vacuum chamber.

Only gold was used as the evaporation source material. The inside of the tank was evacuated to about 1 O-S Torr, and the gold was heated by electron beam heating.
A gold evaporated film with a thickness of about 100 mm was formed on a quartz glass substrate. The performance of this membrane was evaluated in the same manner as in Example 1. The results are shown in the table below.

几■1A Using only lead as the evaporation source material, about 15% of glass waste material
A lead evaporated film with a thickness of 0.00 cm was formed. below.

This is the same as Comparative Example 1.

(Effects of the Invention) According to the present invention, since a vapor deposited film is formed from a mixture containing silicon oxide together with a conductive material, the adhesion to the base material is better than when only a conductive material is vapor deposited. Remarkably superior in quality.

Therefore, the conductivity can be maintained for a long period of time without being easily peeled off. This is because the vapor deposition method is not special.

There is no need to go through complicated processes or set strict deposition conditions. The obtained thin film has excellent transparency and conductivity, and the conductivity is uniform throughout the layer. This conductive transparent thin film can be effectively used not only as an electro-optical element, an antistatic plate, a heat generating element of the dustproof plate 9, but also as a drip-proof/anti-fog glass.

that's all Applicant: Sekisui Chemical Co., Ltd.

Claims (1)

[Scope of Claims] 1. A method for forming a conductive transparent thin film, which includes evaporating a mixture containing a silicate oxide and a conductive material to form a deposited film on a substrate. 2. The method according to claim 1, wherein the silicon oxide is borosilicate glass. 3. The method according to claim 1, wherein the conductive material is metal. 4. The method according to claim 3, wherein the metal is at least one selected from the group consisting of gold, platinum, silver, lead, palladium, and copper. 5. The method according to claim 1, wherein the deposited film is formed by a vacuum evaporation method, an ion plating method, or a sputtering method.