JPH0431017A - Transfer mold - Google Patents
Transfer moldInfo
- Publication number
- JPH0431017A JPH0431017A JP13877990A JP13877990A JPH0431017A JP H0431017 A JPH0431017 A JP H0431017A JP 13877990 A JP13877990 A JP 13877990A JP 13877990 A JP13877990 A JP 13877990A JP H0431017 A JPH0431017 A JP H0431017A
- Authority
- JP
- Japan
- Prior art keywords
- cavity
- resin
- mold
- infrared rays
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 claims abstract description 39
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000001721 transfer moulding Methods 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract description 5
- 238000000465 moulding Methods 0.000 abstract description 4
- 238000013007 heat curing Methods 0.000 abstract 1
- 244000144992 flock Species 0.000 description 11
- 229910001315 Tool steel Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/72—Heating or cooling
- B29C45/73—Heating or cooling of the mould
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、トランスファー成形による半導体素子の樹脂
封止に用いる金型の構造に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to the structure of a mold used for resin sealing of semiconductor elements by transfer molding.
〈従来の技術〉
第３図は、この種のトランスファー成形金型の従来例を
説明する要部断面概略図である。図の様にこのトランス
ファー成形金型２】（以下単に金型２１と叶ふ）は、°
リードフレーム２２に搭載された半導体素子２３を樹脂
封止する様に、合金工具鋼から成る上型、下型の二つの
キャビティブロック２４．２５で構成されている。そし
てこの金型２１ては、各キャビティフロック２４．２５
に凹部２４ａ 、２５ａを設けることによりキャビティ
２６か形成されている。又各キャビティフロック２４．
２５には、ヒータ２７．２８か、キャビティ２６の上下
に位置した状態で組込まれている。<Prior Art> FIG. 3 is a schematic cross-sectional view of a main part explaining a conventional example of this type of transfer molding die. As shown in the figure, this transfer molding mold 2] (hereinafter simply referred to as mold 21) is
It is composed of two cavity blocks 24 and 25, an upper mold and a lower mold, made of alloy tool steel so as to resin-seal the semiconductor element 23 mounted on the lead frame 22. And this mold 21 has each cavity flock 24.25.
A cavity 26 is formed by providing recesses 24a and 25a. Also, each cavity flock 24.
Heaters 27 and 28 are installed in the cavity 25, located above and below the cavity 26.
Ｌ足金型２１を用いて樹脂を成形し半導体素子２３を封
止するには、先ずキャビティ２６の中央に半導体素子２
３を収納する様にして上下のキャビティフロック２４，
２５てリードフレーム２２を挟み、次いてキャどティフ
ロック２４．２５をヒータ２７，２８により加熱して１
６０〜１８０°Ｃの温度とする。統いて図示せぬ注入孔
からキャビティ２６内へ加熱硬化性の樹脂を注入する。To mold resin and seal the semiconductor element 23 using the L-leg mold 21, first place the semiconductor element 2 in the center of the cavity 26.
3, the upper and lower cavity flocks 24,
25, sandwiching the lead frame 22, and then heating the caddy flocs 24 and 25 with heaters 27 and 28.
The temperature is 60-180°C. A thermosetting resin is injected into the cavity 26 through an injection hole (not shown).
この状態て所定時間おき、キャどティ２６内の樹脂を、
金型２１を外せる程度に仮硬化させて成形し、半導体素
子２３を封止する。そして上下のキャビティフロック２
４．２５を分離してリードフレーム２２を取出し、続い
てそのリードフレーム２２を、所定の温度にセットされ
た恒温槽に入れ、半導体素子２３を封止した樹脂を本硬
化させる。In this state, at predetermined intervals, remove the resin inside the caddy 26.
The mold 21 is temporarily cured and molded to such an extent that it can be removed, and the semiconductor element 23 is sealed. And upper and lower cavity flock 2
4.25 is separated and the lead frame 22 is taken out, and then the lead frame 22 is placed in a constant temperature bath set at a predetermined temperature, and the resin that seals the semiconductor element 23 is fully cured.
〈発明が解決しようとする課題〉
しかし上記構成のトランスファー成形金型２１ては、キ
ャビティ２６内へ注入した樹脂に対する加熱の効率か悪
い為、樹脂の成形に１２０〜１６０秒の時間かかかり、
半導体製造における樹脂封止工程の能率を上げることか
できなかった。<Problems to be Solved by the Invention> However, the transfer molding mold 21 having the above configuration has poor heating efficiency for the resin injected into the cavity 26, so it takes 120 to 160 seconds to mold the resin.
It was not possible to improve the efficiency of the resin encapsulation process in semiconductor manufacturing.
本発明は、この問題を解決すべく、キャビティ内の樹脂
を効率よく加熱し、成形時間を短縮させることのできる
トランスファー成形金型を提供することを目的とする。In order to solve this problem, the present invention aims to provide a transfer molding die that can efficiently heat the resin in the cavity and shorten the molding time.
〈課題を解決するための手段〉
上記目的を達成する為に本発明のトランスファー成形金
型では、キャビティを、加熱により赤外線を放出する部
材て形成した。<Means for Solving the Problems> In order to achieve the above object, in the transfer molding die of the present invention, the cavity is formed of a member that emits infrared rays when heated.
く作用〉
上記構成によれば、キャビティ内に注入された樹脂を加
熱する際に、赤外線放出部材からキャビティ内へ赤外線
か放出され、その赤外線、特に波長の長い遠赤外線か樹
脂の内部に進入してその樹脂を効率よく加熱する。According to the above configuration, when the resin injected into the cavity is heated, infrared rays are emitted from the infrared emitting member into the cavity, and the infrared rays, especially far infrared rays with long wavelengths, enter the inside of the resin. heat the resin efficiently.
（実施例〉 以下、図面に基づいて本発明の詳細な説明する。(Example> Hereinafter, the present invention will be described in detail based on the drawings.
第１図は、本発明に係るトランスファー成形金型の要部
断面概略図である。FIG. 1 is a schematic sectional view of a main part of a transfer molding die according to the present invention.
図に示す様にこのトランスファー成形金型ｌ（以下単に
金型１と呼ぶ）は、リードフレーム２に搭載された半導
体素子３を樹脂封止する様に、合金工具鋼から成る上型
、下型の二つのキャビティブロック４，５て構成されて
いる。そしてこの金型ｌの特徴として、各キャビティフ
ロック４．５に、赤外線放出部材６，７か対向した状態
て埋込まれ、それらの赤外線放出部材６，７に凹部６ａ
、 ７ａを設けることによりキャビティ８か形成され
ている。上記赤外線放出部材６，７は、加熱により赤外
線を放出する物質、例えばセラミック或いはカーボンか
ら成るものである。As shown in the figure, this transfer molding die l (hereinafter simply referred to as die 1) has an upper die and a lower die made of alloy tool steel so as to resin-seal a semiconductor element 3 mounted on a lead frame 2. It consists of two cavity blocks 4 and 5. As a feature of this mold l, infrared emitting members 6 and 7 are embedded in each cavity flock 4.5 in a state facing each other, and recesses 6a are formed in these infrared emitting members 6 and 7.
, 7a, a cavity 8 is formed. The infrared emitting members 6 and 7 are made of a material that emits infrared rays when heated, such as ceramic or carbon.
この様に本発明の金型１では、樹脂か注入されるキャビ
ティ８か、赤外線放出部材６，７て形成されている。As described above, in the mold 1 of the present invention, the cavity 8 into which resin is injected or the infrared ray emitting members 6 and 7 are formed.
又、上記各キャビティフロック４，５には、キャビティ
８内の樹脂を加熱する手段として、例えば棒状のヒータ
９，１０か、上記赤外線放出部材６．７の上下に位置し
た状態で組込まれている。Furthermore, each of the cavity flocks 4 and 5 has rod-shaped heaters 9 and 10 installed as means for heating the resin within the cavity 8, located above and below the infrared emitting member 6.7. .
上記金型１を用いて樹脂を成形し半導体素子３を封止す
るには、先ずキャビティ８の中央に半導体素子３を収納
する様にして上下のキャビティフロック４，５てリード
フレーム２を挟み、次いてヒータ９．］０によりキャビ
ティブロック４，５及び赤外線放出部材６．７を加熱し
て１６０〜１８０’Ｃの温度とする。続いて図示せぬ注
入孔からキャビティ８内へ加熱硬化性の樹脂を注入する
。To mold resin and seal the semiconductor element 3 using the mold 1, first, the semiconductor element 3 is housed in the center of the cavity 8, and the lead frame 2 is sandwiched between the upper and lower cavity flocks 4, 5. Next, heater 9. ]0 to heat the cavity blocks 4, 5 and the infrared emitting member 6.7 to a temperature of 160 to 180'C. Subsequently, a thermosetting resin is injected into the cavity 8 through an injection hole (not shown).
この金型ｌの場合、加熱された赤外線放出部材６．７か
らキャどティ８内へ赤外線か放出されその赤外線、特に
波長の長い遠赤外線かキャビティ８内の樹脂の内部に進
入してその樹脂を効率よく加熱する。この赤外線の加熱
作用によりヒータ９，１０のパワーを従来通りとしても
、従来の二部の−から三部の−の時間で、キャビティ８
内の樹脂を、金型ｌを外せる程度に仮硬化させて成形し
、半導体素子３を封止することかてきる。In the case of this mold 1, infrared rays are emitted from the heated infrared emitting member 6.7 into the cavity 8, and the infrared rays, especially far infrared rays with long wavelengths, enter the inside of the resin in the cavity 8 and the resin heat efficiently. Even if the power of the heaters 9 and 10 is maintained as before due to the heating effect of the infrared rays, the cavity 8
The resin inside can be temporarily hardened and molded to such an extent that the mold l can be removed, and the semiconductor element 3 can be sealed.
その後、上下のキャビティフロック４，５を分離してリ
ードフレーム２を取出し、統いてそのリードフレーム２
を、所定の温度にセットされた恒温槽に入れ、半導体素
子３を封止した樹脂を本硬化させる。After that, the upper and lower cavity flocks 4 and 5 are separated, the lead frame 2 is taken out, and the lead frame 2 is unified.
is placed in a constant temperature bath set at a predetermined temperature, and the resin sealing the semiconductor element 3 is fully cured.
上述の様にこの金型ｌを用いれば、樹脂の成形時間か大
幅に短縮されることになる。If this mold 1 is used as described above, the resin molding time will be significantly shortened.
更に、キャビティ８を形成する赤外線放出部材６．７と
してセラミック或いはカーホンを使用すると、下記の様
な種々の利点かある。Furthermore, when ceramic or carphone is used as the infrared emitting member 6.7 forming the cavity 8, there are various advantages as described below.
即ち、セラミツつては、一つの型により同一形状のもの
を大量に作ることかでき、又カーホンは研削か容易てあ
る。従って硬い合金工具鋼を研削，表面処理するよりも
容易にキャビテイ８を形成することかてきる。しかも赤
外線放出部材６，７をキャビティブロック４，５に対し
て、嵌合或いはネジ込みにより着脱可能に取付ければ、
必要に応じて別個に交換することかてきるとともに、大
きさの異なるキャビティ８を形成した赤外線放出部材６
，７と交換することにより、同一のキャビティブロック
４，５を、大きさの異なる種々の半導体素子３に対応さ
せることもてきる。That is, ceramics can be made in large quantities with the same shape using one mold, and carphones can be easily ground. Therefore, the cavity 8 can be formed more easily than by grinding and surface treating hard alloy tool steel. Moreover, if the infrared emitting members 6 and 7 are removably attached to the cavity blocks 4 and 5 by fitting or screwing,
An infrared emitting member 6 that can be replaced separately as needed and has cavities 8 of different sizes formed therein.
, 7, the same cavity blocks 4, 5 can be made to correspond to various semiconductor elements 3 of different sizes.
キャビティ８の数、つまり赤外線放出部材６，７の数か
多い場合や、赤外線放出部材６，７か交換式てある場合
には、その部材６，７として、特に量産性に優れたセラ
ミックを使用すると経済的てある。When the number of cavities 8, that is, the number of infrared emitting members 6 and 7, is large, or when the infrared emitting members 6 and 7 are replaceable, ceramic, which is particularly suitable for mass production, is used as the members 6 and 7. Then it's economical.
更に、セラミックやカーボンは熱膨張率か低い為に、設
計におけるキャビティ８の寸法決定の計算か、熱膨張率
の高い合金工具鋼の場合に比べて簡略化される。Furthermore, since ceramic and carbon have a low coefficient of thermal expansion, calculations for determining the dimensions of the cavity 8 in design are simplified compared to the case of alloy tool steel, which has a high coefficient of thermal expansion.
第２図は、本発明の他の実施例を示す要部断面概略図て
ある。このトランスファー成形金型１−１ （以下単に
金型１−１と呼ぶ）の場合には、チップ才ンボートと称
される実装形態によりプリント基板１１のアイラント１
２上に配線１３と電気的に接続された状態て実装された
半導体素子３−１を樹脂封止する様に、合金工具鋼から
成る一つのキャビティブロック４−１で構成されている
。そのキャヒティブロック４−１の構造は、先の実施例
におけるキャビティフロック４或いは５と同様で、セラ
ミック，カーボン等から成る赤外線放出部材６−１か埋
込まれ、その赤外線放出部材６−１に凹部６ａ−１を設
けることによりキャビティ８−１か形成されている。又
キャどティフロック４−１内の赤外線放出部材６−１の
上方には、棒状のヒータ９−１か組込まれている。FIG. 2 is a schematic cross-sectional view of main parts showing another embodiment of the present invention. In the case of this transfer molding mold 1-1 (hereinafter simply referred to as mold 1-1), the eyelet 1 of the printed circuit board 11 is
The cavity block 4-1 is made of alloy tool steel and is configured to seal with a resin a semiconductor element 3-1 mounted on the wiring 13 while being electrically connected to the wiring 13. The structure of the cavity block 4-1 is the same as that of the cavity block 4 or 5 in the previous embodiment, and an infrared emitting member 6-1 made of ceramic, carbon, etc. is embedded in the infrared emitting member 6-1. A cavity 8-1 is formed by providing the recess 6a-1. Moreover, a rod-shaped heater 9-1 is installed above the infrared ray emitting member 6-1 in the cathode lock 4-1.
そしてキャビティ８−１の中央に半導体素子３−１を収
納する様にしてキャヒティフロック４−１をプリント基
板１１に圧着させた後、先の実施例の場合と同様に樹脂
の注入，加熱を行えば、赤外線放出部材６−１からの赤
外線による効率の良い加熱作用により、キャヒティ８−
１内の樹脂を素早く硬化させて成形し、半導体素子３−
１を樹脂封止することかできる。従来は、この実装形態
の半導体素子３−１の柵脂封止には液状樹脂或いは半固
形樹脂を用いていたか、上記構成の金型１−１によるト
ランスファー成形を利用することによって、樹脂封止の
能率を向上させることかできる。After crimping the cavity flock 4-1 to the printed circuit board 11 so that the semiconductor element 3-1 is housed in the center of the cavity 8-1, resin is injected and heated in the same manner as in the previous embodiment. If this is done, the efficient heating effect of the infrared rays from the infrared emitting member 6-1 will cause the cavity 8-
The resin in 1 is quickly cured and molded, and the semiconductor element 3-
1 can be sealed with resin. Conventionally, liquid resin or semi-solid resin has been used to seal the semiconductor element 3-1 in this mounting form, or resin sealing has been performed by using transfer molding using the mold 1-1 having the above configuration. It is possible to improve the efficiency of
尚、上記何れの実施例においても、赤外線放出部材６，
７．６−１は、キャビティフロック４，５．４−１を介
してヒータ９，１０．９−１により加熱されることにな
るか、赤外線放出部材６，７．６−１を直接ヒータで加
熱する様に構成してもよく、或いは赤外線放出部材６，
７．６−１そのものをヒータの抵抗体として利用し、発
熱させる様に構成してもよい。Incidentally, in any of the above embodiments, the infrared emitting member 6,
7.6-1 is heated by the heater 9, 10.9-1 via the cavity flock 4, 5.4-1, or the infrared emitting member 6, 7.6-1 is heated directly by the heater. Alternatively, the infrared emitting member 6,
7.6-1 itself may be used as a resistor of a heater to generate heat.
更に、合金工具鋼から成るキャヒティフロック４，５．
４−１を用いずに、金型全体を赤外線放出部材て構成し
てもよい。Further, cavity flocks 4, 5, made of alloy tool steel.
4-1 may be omitted, and the entire mold may be composed of an infrared emitting member.
〈発明の効果〉
以上述へた様に、本発明のトランスファー成形金型によ
れば、キャヒティ内の樹脂を赤外線により効率よく加熱
し得ることから、樹脂の成形時間を大幅に短縮して樹脂
封止工程の能率を１−げることかでき、その結果、半導
体製造の量産性を向トさせることかできる。<Effects of the Invention> As described above, according to the transfer molding mold of the present invention, since the resin in the cavity can be efficiently heated by infrared rays, the resin molding time can be significantly shortened and resin sealing can be achieved. The efficiency of the stopping process can be increased by 1, and as a result, the mass productivity of semiconductor manufacturing can be improved.
又、キャビティを形成する赤外線放出部材としてセラミ
ック或いはカーボンを使用することにより、加工性をも
向上させることかできる。Further, processability can also be improved by using ceramic or carbon as the infrared emitting member forming the cavity.
第１ １Ａは、本発明の′ｉ！施例を示ず要部断面概略
図
第２１”ｌは、
概略図
第３図は
る。
１，１
８，８
９．９
本発明の他の実施例を示す要部断面
従来例を示す要部断面概ｗ８図てあ
１・・・トランスファー成形金型，
１，７・・・赤外線放出部材，
１・・・キャヒティ，
１，］［］−−・ヒータ。
ｆオＡ〃め犬芳二Ｆ″Ｆ広ｆｆｇ戸を逆〃Ｌ各ｐ第１
図
ｒ／；ｌ＊ｘ：ｉダノ、ｆ”勿（グ（しβ７（Ｌ【ケ、
ｌワｈτｆ−Ａリテ、Ｃりぐ釆Ｐけ、デブ４？ｚｐｍａ
纒ダ２
第３図The first 1A is 'i!' of the present invention! 1,1 8,8 9.9 A schematic cross-sectional view of the main part showing another embodiment of the present invention No. 21"l is a schematic cross-sectional view of the main part showing a conventional example showing another embodiment of the present invention. Approximate cross-sectional view w8 1...Transfer mold, 1, 7...Infrared emitting member, 1...Caherty, 1,][]--Heater. F″F wide ffg door reverse〃L each p 1st figure r/; l*x: i Dano, f” course
lwa hτf-A lite, C rigged, Pke, fat 4? zpma
Kaida 2 Figure 3
Claims (2)
のキャビティ内の樹脂を加熱する手段とを備えたトラン
スファー成形金型において、 上記キャビティが、加熱により赤外線を放出する部材で
形成されたことを特徴とするトランスファー成形金型。(1) In a transfer molding mold equipped with a cavity into which thermosetting resin is injected and means for heating the resin within the cavity, the cavity is formed of a member that emits infrared rays when heated. A transfer molding mold featuring:
ンから成ることを特徴とする請求項１記載のトランスフ
ァー成形金型。(2) The transfer molding mold according to claim 1, wherein the infrared emitting member is made of ceramic or carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13877990A JP2997010B2 (en) | 1990-05-29 | 1990-05-29 | Method for manufacturing semiconductor device and transfer mold used therein |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13877990A JP2997010B2 (en) | 1990-05-29 | 1990-05-29 | Method for manufacturing semiconductor device and transfer mold used therein |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0431017A true JPH0431017A (en) | 1992-02-03 |
| JP2997010B2 JP2997010B2 (en) | 2000-01-11 |
Family
ID=15230005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13877990A Expired - Fee Related JP2997010B2 (en) | 1990-05-29 | 1990-05-29 | Method for manufacturing semiconductor device and transfer mold used therein |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2997010B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19626594B4 (en) * | 1996-06-26 | 2005-06-23 | Yasuo Yokohama Kurosaki | Injection mold for polymers |
-
1990
- 1990-05-29 JP JP13877990A patent/JP2997010B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19626594B4 (en) * | 1996-06-26 | 2005-06-23 | Yasuo Yokohama Kurosaki | Injection mold for polymers |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2997010B2 (en) | 2000-01-11 |
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