JPH04306897A - Manufacture of semiconductor quantum well box - Google Patents
Manufacture of semiconductor quantum well boxInfo
- Publication number
- JPH04306897A JPH04306897A JP19265591A JP19265591A JPH04306897A JP H04306897 A JPH04306897 A JP H04306897A JP 19265591 A JP19265591 A JP 19265591A JP 19265591 A JP19265591 A JP 19265591A JP H04306897 A JPH04306897 A JP H04306897A
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- semiconductor quantum
- semiconductor
- gaas
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 13
- 239000002923 metal particle Substances 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 14
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 12
- 239000010931 gold Substances 0.000 abstract description 12
- 229910052737 gold Inorganic materials 0.000 abstract description 12
- 239000002245 particle Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000004888 barrier function Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 230000005476 size effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- -1 and at this time Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体量子井戸箱の製
造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor quantum well box.
【０００２】0002
【従来の技術】厚さが数ｎｍ〜数１０ｎｍの範囲で、異
なる禁制帯幅をもつ２種類の超薄膜を周期的に積み重ね
た半導体積層構造（多重量子井戸構造）では、バルク半
導体にはない物理現象が生まれ、各種デバイスに応用さ
れている。たとえば、ＡｌＧａＡｓ／ＧａＡｓ多重量子
井戸構造を活性層に利用した半導体レ−ザでは、発振し
きい値電流の低減、スペクトルライン幅の低減、高出力
化などの優れた特性が報告されてきた。前記の物理現象
は、多重量子井戸構造内で膜厚方向に周期化したポテン
シャルの底（量子井戸内部）に荷電粒子が閉じ込められ
る（量子サイズ効果）ことに起因している。一方、膜厚
方向のみならず、面内方向にも量子井戸を形成する量子
細線構造あるいは量子井戸箱構造では、荷電粒子の閉じ
込め効果がさらに顕著となり、半導体レ−ザなどのデバ
イスの特性を向上させることができる。[Prior Art] A semiconductor stacked structure (multi-quantum well structure) in which two types of ultra-thin films with different forbidden band widths are periodically stacked in the range of several nanometers to several tens of nanometers in thickness is not found in bulk semiconductors. Physical phenomena have been created and applied to various devices. For example, semiconductor lasers using an AlGaAs/GaAs multiple quantum well structure in their active layer have been reported to have excellent characteristics such as reduced oscillation threshold current, reduced spectral line width, and increased output. The above-mentioned physical phenomenon is caused by the fact that charged particles are confined at the bottom of the potential (inside the quantum well) that is periodized in the film thickness direction within the multi-quantum well structure (quantum size effect). On the other hand, in quantum wire structures or quantum well box structures in which quantum wells are formed not only in the film thickness direction but also in the in-plane direction, the effect of confining charged particles becomes even more pronounced, improving the characteristics of devices such as semiconductor lasers. can be done.
【０００３】量子サイズ効果の現れる一辺の長さが数ｎ
ｍ〜数１０ｎｍの半導体量子井戸箱を製造するために、
従来は電子ビ−ム露光技術に代表される超微細加工技術
によって試みられていた。これは、膜厚と界面の急峻性
の制御に優れた半導体積層技術を利用する方法であり、
まずはじめにＭＯＶＰＥ法（有機金属気相成長法）やＭ
ＢＥ法（分子線エピタキシ法）によって積層構造の制御
された半導体量子井戸構造を作製し、その後上記超微細
加工技術によって微細なグリッドパタ−ンをレジストな
どで形成し、これをマスクとして選択エッチングを行う
ことにより、半導体量子井戸箱を製造しようとするもの
である。（ジャ−ナル・オブ・バキュ−ム・サイエンス
．テクノロジイ（Ｊ．Ｖａｃ．Ｓｃｉ．Ｔｅｃｈｎｏｌ
）Ｂ４．３５８（１９８６））。[0003] The length of one side where the quantum size effect appears is several n
In order to manufacture a semiconductor quantum well box of m to several tens of nanometers,
Conventionally, attempts have been made to use ultra-fine processing techniques such as electron beam exposure techniques. This is a method that utilizes semiconductor stacking technology, which has excellent control over film thickness and interface steepness.
First of all, the MOVPE method (Metalorganic Vapor Phase Epitaxy) and M
A semiconductor quantum well structure with a controlled layered structure is fabricated using the BE method (molecular beam epitaxy method), and then a fine grid pattern is formed using a resist using the above-mentioned ultrafine processing technology, and selective etching is performed using this as a mask. By doing this, we intend to manufacture a semiconductor quantum well box. (J.Vac.Sci.Technology)
) B4.358 (1986)).
【０００４】0004
【発明が解決しようとする課題】しかしながら、従来の
半導体量子井戸箱の製造方法においては、超微細加工技
術の加工精度が荒く、量子サイズ効果が現れる一辺の長
さが数ｎｍ〜数１０ｎｍで、かつ大きさの揃った量子井
戸箱を再現性良く製造することは困難であった。加工精
度が荒くなる原因は、選択エッチングの際のエッチング
速度の大きなばらつきやサイドエッチングなどにあった
。[Problems to be Solved by the Invention] However, in the conventional manufacturing method of semiconductor quantum well boxes, the processing accuracy of ultrafine processing technology is rough, and the length of one side where the quantum size effect appears is from several nanometers to several tens of nanometers. Moreover, it has been difficult to manufacture quantum well boxes of uniform size with good reproducibility. The causes of poor processing accuracy were large variations in etching speed during selective etching and side etching.
【０００５】本発明はこのような事情に鑑みなされたも
ので、積層構造を選択エッチングするという従来技術と
は異なる技術的手段によって、量子サイズ効果が現れる
一辺の長さが数ｎｍ〜数１０ｎｍでかつ大きさの揃った
半導体量子井戸箱を、加工精度よく作製するものである
。The present invention was developed in view of the above circumstances, and uses a technical means different from the conventional technology of selectively etching a laminated structure to produce a structure with a side length of several nanometers to several tens of nanometers in which the quantum size effect appears. Moreover, semiconductor quantum well boxes of uniform size can be manufactured with high processing accuracy.
【０００６】[0006]
【課題を解決するための手段】請求項１の半導体量子井
戸箱の製造方法は、第１の半導体材料上に金属超微粒子
を２次元的に規則正しく並べ、前記金属超微粒子間に第
１の半導体材料を選択成長させた後、前記金属超微粒子
を除去することによって形成される穴部に、前記第１の
半導体材料よりも禁制帯幅の小さな第２の半導体材料を
埋め込むことを特徴とする。[Means for Solving the Problems] A method for manufacturing a semiconductor quantum well box according to claim 1, wherein ultrafine metal particles are regularly arranged two-dimensionally on a first semiconductor material, and the first semiconductor quantum well box is arranged between the ultrafine metal particles. After the material is selectively grown, the holes formed by removing the ultrafine metal particles are filled with a second semiconductor material having a smaller forbidden band width than the first semiconductor material.
【０００７】本発明の技術的手段の第１の特徴は、結晶
成長の初期過程において形成される超微粒子が、エネル
ギ−的により安定に存在できる位置に移動することを原
理として作られる金属超微粒子を、半導体量子井戸箱を
埋め込むための穴部を精度よく作製するために利用する
ことにある。The first feature of the technical means of the present invention is that ultrafine metal particles are produced based on the principle that ultrafine particles formed in the initial process of crystal growth move to a position where they can exist more energetically stable. The objective is to utilize this method to accurately fabricate a hole for embedding a semiconductor quantum well box.
【０００８】第２の特徴は、前記穴部内の結晶面とそれ
以外の結晶面での結晶成長速度の違いを利用して、穴部
のみに目的とする半導体量子井戸箱を成長させることに
ある。The second feature is that the desired semiconductor quantum well box is grown only in the hole by utilizing the difference in crystal growth rate between the crystal plane inside the hole and the other crystal planes. .
【０００９】[0009]
【作用】本発明によれば、大きさが数ｎｍ〜数１０ｎｍ
の範囲で揃い、かつ２次元的に規則正しく配列した金属
超微粒子を利用することによって、金属超微粒子と同様
の穴部を障壁層に形成することができる。さらに、以上
のように形成された穴部に半導体材料を選択成長させる
ことを利用して、穴部と同様に大きさが数ｎｍ〜数１０
ｎｍの範囲で揃い、かつ２次元的に規則的に配列した半
導体量子井戸箱を再現性良く製造することができる。ま
たこの行程を繰り返し行うことによって、３次元的に規
則正しく配列した半導体量子井戸箱を製造することがで
きる。[Operation] According to the present invention, the size is from several nm to several tens of nm.
By using ultrafine metal particles arranged in a two-dimensional regular manner within the range of , holes similar to those of the ultrafine metal particles can be formed in the barrier layer. Furthermore, by selectively growing a semiconductor material in the hole formed as described above, we can make a material with a size ranging from several nanometers to several tens of nanometers, similar to the hole.
Semiconductor quantum well boxes that are aligned in the nanometer range and are two-dimensionally regularly arranged can be manufactured with good reproducibility. Moreover, by repeating this process, it is possible to manufacture semiconductor quantum well boxes that are regularly arranged three-dimensionally.
【００１０】0010
【実施例】以下、本発明の一実施例を添付図面に基づい
て説明する。図１は本発明による半導体量子井戸箱の製
造手順を説明する図である。図１（ａ）に示すように、
まず始めに、面方位（１００）のＧａＡｓ基板１上に障
壁層とするＡｌＧａＡｓ層２を１００ｎｍの厚さに通常
のＭＢＥ法によって成長した。次にＭＢＥチャンバ内に
シランガスをチャンバ内圧力が５〜１０Ｔｏｒｒになる
ように導入し、ＡｌＧａＡｓ層２上にグリッドパタ−ン
（縞間隔３０ｎｍ）で電子ビ−ムを照射し、シリコンを
析出させた。照射に使用した電子ビ−ムは、加速電圧２
０ｋＶ、ビ−ム電流２×１０−７Ａ、ビ−ム径４ｎｍで
、これにより幅５ｎｍのシリコングリッドパタ−ン３が
形成された。図１（ｂ）に示すように、シリコンによる
グリッドパタ−ン３形成後、再びチャンバ内を超高真空
状態に排気し、金を５ｎｍの厚さに蒸着してから２４０
℃に加熱すると、シリコングリッドパタ−ン３に整然と
沿って一辺が約１０ｎｍの金超微粒子４が形成された。
これは、金の超微粒子の気相との界面エネルギ−よりも
シリコン固相との界面エネルギ−の方が低くく、安定に
存在できるためと考えられる。次に図１（ｃ）、（ｄ）
に示すように、試料をチャンバ外に取り出し、ふっ酸：
硝酸：酢酸＝１：４：３の混合液でシリコングリッドパ
タ−ン３を選択エッチングすることによって除去し、Ａ
ｌＧａＡｓ層２上に一辺が約１０ｎｍの金超微粒子４の
みを約１０ｎｍの間隔で残した。図１（ｅ）に示すよう
に、その結果できた金超微粒子４間の隙間にＭＢＥ法に
よってＡｌＧａＡｓ５を選択成長した。その際の成長温
度は４００℃である。
ＡｌＧａＡｓ５を選択成長した後再度チャンバ外に試料
を取り出し、金超微粒子４の選択エッチングを行った。
エッチング液には水とメタノ−ルの混合溶媒（４０ｃｃ
：６０ｃｃ）にヨ−ド（１．２ｇ）とヨウ化アンモニウ
ム（８ｇ）を溶解した液を使用した。図１（ｆ）に示す
ように、金超微粒子４をエッチングすることによってで
きる規則正しく配列した直径１０ｎｍ程度の穴部６に井
戸層とするＧａＡｓをＭＢＥ法によって選択成長した。
その際の成長温度は３５０〜５００℃であり、この時、
結晶成長速度の面方位依存性によって穴部６のみに選択
的にＧａＡｓの成長が起こった。ＧａＡｓを選択成長し
た後、障壁層であるＡｌＧａＡｓ層８を全面に成長した
。さらに以上のプロセスを繰り返すことによって、３次
元的に規則正しく配列したＧａＡｓ量子井戸箱７を製造
することができた。これをフォトルミネッセンスで評価
したところ、発光スペクトルのピ−ク位置が井戸幅１０
ｎｍのＧａＡｓ量子井戸と比較して高エネルギ−側へシ
フトしており、ＧａＡｓが量子井戸箱として機能してい
ることを確認できた。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a diagram illustrating the manufacturing procedure of a semiconductor quantum well box according to the present invention. As shown in Figure 1(a),
First, an AlGaAs layer 2 serving as a barrier layer was grown to a thickness of 100 nm on a GaAs substrate 1 having a plane orientation of (100) by a normal MBE method. Next, silane gas was introduced into the MBE chamber so that the pressure inside the chamber was 5 to 10 Torr, and the AlGaAs layer 2 was irradiated with an electron beam in a grid pattern (stripe spacing 30 nm) to deposit silicon. . The electron beam used for irradiation had an acceleration voltage of 2
A silicon grid pattern 3 with a width of 5 nm was formed at 0 kV, a beam current of 2 x 10 -7 A, and a beam diameter of 4 nm. As shown in FIG. 1(b), after forming the grid pattern 3 using silicon, the inside of the chamber was again evacuated to an ultra-high vacuum state, and gold was evaporated to a thickness of 5 nm.
When heated to .degree. C., ultrafine gold particles 4 having a side of about 10 nm were formed along the silicon grid pattern 3 in an orderly manner. This is thought to be because the interfacial energy of the ultrafine gold particles with the silicon solid phase is lower than that with the gas phase, allowing them to exist stably. Next, Figure 1(c),(d)
Take the sample out of the chamber and add hydrofluoric acid:
The silicon grid pattern 3 was removed by selective etching with a mixture of nitric acid and acetic acid = 1:4:3.
Only ultrafine gold particles 4 each having a side of about 10 nm were left on the lGaAs layer 2 at intervals of about 10 nm. As shown in FIG. 1(e), AlGaAs 5 was selectively grown in the gaps between the resulting ultrafine gold particles 4 by the MBE method. The growth temperature at that time was 400°C. After selectively growing AlGaAs 5, the sample was taken out of the chamber again, and the ultrafine gold particles 4 were selectively etched. The etching solution is a mixed solvent of water and methanol (40cc).
A solution prepared by dissolving iodine (1.2 g) and ammonium iodide (8 g) in :60 cc) was used. As shown in FIG. 1(f), GaAs to be used as a well layer was selectively grown by the MBE method in regularly arranged holes 6 having a diameter of about 10 nm, which were formed by etching the ultrafine gold particles 4. The growth temperature at that time was 350 to 500°C, and at this time,
GaAs selectively grew only in the holes 6 due to the plane orientation dependence of the crystal growth rate. After selectively growing GaAs, an AlGaAs layer 8 serving as a barrier layer was grown over the entire surface. By further repeating the above process, it was possible to manufacture GaAs quantum well boxes 7 that were regularly arranged three-dimensionally. When this was evaluated using photoluminescence, the peak position of the emission spectrum was found to be within the well width of 10
It was confirmed that the energy was shifted to the higher energy side compared to the nm GaAs quantum well, and that GaAs functioned as a quantum well box.
【００１１】本実施例では、ＧａＡｓ／ＡｌＧａＡｓ系
半導体量子井戸箱の作製方法について述べたが、これに
限ることなく、たとえば、ＩｎＡｓ／ＧａＩｎＡｓ系な
どのＩＩＩ−Ｖ族化合物半導体やＩＩ−ＶＩ族化合物半
導体においても同様の半導体量子井戸箱を製造すること
ができる。[0011] In this embodiment, a method for manufacturing a GaAs/AlGaAs based semiconductor quantum well box has been described. Similar semiconductor quantum well boxes can also be manufactured in semiconductors.
【００１２】また本実施例では、結晶成長手段としてＭ
ＢＥ法を使用したが、これに限ることなく、ＭＯＶＰＥ
法を使用することもできる。Furthermore, in this embodiment, M is used as a crystal growth means.
The BE method was used, but is not limited to MOVPE.
You can also use the method.
【００１３】さらに本実施例では、金属超微粒子として
金を使用したが、これに限ることなく、たとえば、アル
ミニウムなどの金属を使用することもできる。Furthermore, although gold is used as the ultrafine metal particles in this embodiment, the present invention is not limited to this, and metals such as aluminum may also be used.
【００１４】この他本実施例では、グリッドパタ−ンに
シリコンを使用したが、これに限らず、たとえば、ガリ
ウムやゲルマニウムなどの金属、カ−ボンや窒素などの
化合物をグリッドパタ−ンの材料として使用することも
できる。In addition, although silicon is used for the grid pattern in this embodiment, the material for the grid pattern is not limited to this, and for example, metals such as gallium and germanium, and compounds such as carbon and nitrogen can be used as the material for the grid pattern. It can also be used as
【００１５】[0015]
【発明の効果】本発明によれば、従来不可能であった一
辺の長さが数ｎｍ〜数１０ｎｍでかつ大きさの揃った半
導体量子井戸箱を３次元的に規則正しく配列させた構造
で、再現性良く容易に製造することができた。さらに本
発明により作製した半導体量子井戸箱を半導体レ−ザの
活性層に利用した結果、発振しきい値電流、スペクトル
ライン幅などにおいて、従来の半導体レ−ザの性能を凌
ぐ半導体量子井戸箱レ−ザを作製することができた。Effects of the Invention According to the present invention, a structure in which semiconductor quantum well boxes having a side length of several nanometers to several tens of nanometers and uniform sizes are regularly arranged three-dimensionally, which was previously impossible, It was easy to manufacture with good reproducibility. Furthermore, as a result of using the semiconductor quantum well box produced according to the present invention in the active layer of a semiconductor laser, the semiconductor quantum well box surpasses the performance of conventional semiconductor lasers in terms of oscillation threshold current, spectral line width, etc. - I was able to create the.
【図１】図１（ａ）〜（ｃ）は本発明の実施例に係わる
半導体量子井戸箱の製造手順を説明する斜視図である。
図１（ｄ）〜（ｆ）は本発明の実施例に係わる半導体量
子井戸箱の製造手順を説明する断面図である。FIGS. 1A to 1C are perspective views illustrating a manufacturing procedure of a semiconductor quantum well box according to an embodiment of the present invention. FIGS. 1(d) to 1(f) are cross-sectional views illustrating the manufacturing procedure of a semiconductor quantum well box according to an embodiment of the present invention.
１ ＧａＡｓ基板 ２ ＡｌＧａＡｓ層 ３ シリコングリッドパタ−ン ４ 金超微粒子 ５ ＡｌＧａＡｓ ６ 穴部 ７ ＧａＡｓ量子井戸箱 1 GaAs substrate 2 AlGaAs layer 3 Silicon grid pattern 4 Ultrafine gold particles 5 AlGaAs 6 Hole 7 GaAs quantum well box
Claims (1)
２次元的に規則正しく並べ、前記金属超微粒子間に第１
の半導体材料を選択成長させた後、前記金属超微粒子を
除去することによって形成される穴部に、前記第１の半
導体材料よりも禁制帯幅の小さな第２の半導体材料を埋
め込むことを特徴とする半導体量子井戸箱の製造方法。1. Ultrafine metal particles are regularly arranged two-dimensionally on a first semiconductor material, and a first semiconductor material is arranged between the ultrafine metal particles.
After selectively growing the semiconductor material, the holes formed by removing the ultrafine metal particles are filled with a second semiconductor material whose forbidden band width is smaller than that of the first semiconductor material. A method for manufacturing a semiconductor quantum well box.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19265591A JP2979752B2 (en) | 1991-04-03 | 1991-04-03 | Manufacturing method of semiconductor quantum well box |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19265591A JP2979752B2 (en) | 1991-04-03 | 1991-04-03 | Manufacturing method of semiconductor quantum well box |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04306897A true JPH04306897A (en) | 1992-10-29 |
| JP2979752B2 JP2979752B2 (en) | 1999-11-15 |
Family
ID=16294852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19265591A Expired - Lifetime JP2979752B2 (en) | 1991-04-03 | 1991-04-03 | Manufacturing method of semiconductor quantum well box |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2979752B2 (en) |
-
1991
- 1991-04-03 JP JP19265591A patent/JP2979752B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2979752B2 (en) | 1999-11-15 |
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