JPH04297032A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To form a silicon oxide film stably by reducing attachment due to unreacted organic silane material in an exhaust pipe which is drawn out from a reaction container for forming a silicon oxide film. CONSTITUTION:An exhaust pipe 8 is drawn out from a reaction container 1 for forming a silicon oxide film on a substrate wafer 3 with organic silane material. Somewhere along the exhaust pipe, a plasma reaction chamber 10 equipped with a heater with a dielectric coil 9 which serves as heating device that supplies high frequency power is installed. Then, a hydrogen lead-in pipe 11 is connected to the plasma reaction chamber.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention relates to semiconductor manufacturing equipment for forming a silicon oxide film on a substrate wafer using an organic silane material, and in particular, it is possible to maintain the cleanliness of vacuum exhaust equipment by utilizing the hydrogen reduction reaction of the material. The present invention relates to a semiconductor manufacturing apparatus having the above-mentioned structure.

0002

2. Description of the Related Art FIG. 3 is a schematic diagram showing a conventional semiconductor manufacturing apparatus. In the figure, 1 is a reaction vessel used for forming a silicon oxide film, and 2 is a reaction vessel selectively arranged inside the reaction vessel. a board, 3 a substrate wafer placed on the board 2, 4 a heater disposed outside the reaction vessel 1;
Reference numeral 5 denotes a flange cap that closes both ends of the reaction vessel 1, and an exhaust pipe 8 drawn out from the reaction vessel 1.
is connected to a pump 7 via a gate valve 6. In such a configuration, the substrate wafer 3 is placed on the board 2 and placed in the reaction vessel 1, and both ends of the reaction vessel 1 are sealed with flange caps 5. After the inside of the reaction vessel 1 is evacuated by the pump 7, an organic silane material such as TEOS is introduced into the reaction vessel 1 while bubbling nitrogen thereinto. At this time, oxygen is also introduced at the same time, and the temperature inside the container 1 is raised to 500 -
Heat to 700°C. Then, due to the CVD reaction between TEOS and oxygen due to the thermal energy supplied from the heater 4,
A silicon oxide film is formed on the substrate wafer 3. Note that the gate valve 6 is used to control the pressure inside the reaction vessel 1.

0003

By the way, in the CVD reaction, the supplied material does not completely decompose or react, and most of it is exhausted from the container 1 in an unreacted form by the pump 7. In the conventional apparatus described above, the unreacted material leaving the reaction vessel 1 returns to room temperature in the exhaust pipe 8. Since the organic silane material such as TEOS is in a liquid state at room temperature, it liquefies in the exhaust pipe 8 and adheres to the inner wall of the pipe 8. As a result, the deposits become a source of contamination, which deteriorates the quality of the silicon oxide film formed on the substrate wafer, and which also adheres to the gate valve 6 and other parts, making the operation unstable and causing pressure fluctuations during film formation. This results in problems such as the inability to form a film. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor manufacturing apparatus capable of reducing deposits on the exhaust pipe from the reaction vessel for forming the silicon oxide film mentioned above. It is said that

0004

[Means for Solving the Problems] A semiconductor manufacturing apparatus according to the present invention supplies high-frequency power to the middle of an exhaust pipe from a reaction vessel for forming a silicon oxide film on a substrate wafer using an organic silane-based material. heater with induction coil,
A plasma reaction chamber is provided with a selected heating means such as a heater equipped with an ultraviolet light source or a heater equipped with a microwave waveguide, and a hydrogen introduction pipe is connected to this plasma reaction chamber. .

[0005]

[Operation] According to the present invention, by adding a plasma reaction chamber, a heater to which high-frequency power can be applied, and a hydrogen introduction pipe to the exhaust pipe, unreacted organic silane-based materials undergo a chemical reaction with active hydrogen. This can be used to decompose and reduce the amount of unreacted organic silane material deposited on the exhaust piping system.

[0006]

[Embodiment] FIG. 1 shows an embodiment of a semiconductor manufacturing apparatus according to the present invention. In the figure, parts that are the same as or corresponding to those in FIG. do. According to the present invention, in a semiconductor manufacturing apparatus that forms a silicon oxide film on a substrate wafer 3 using an organic silane material, a plasma reaction chamber 10 is provided in the middle of an exhaust pipe 8 from a reaction vessel 1. , is characterized in that a heater 9 with an induction coil for supplying high frequency power as a heating means is provided on the outer periphery thereof, and a hydrogen introduction pipe 11 is connected to the plasma reaction chamber 10 . In such a configuration, the step of forming a silicon oxide film on the substrate wafer 2 by using a thermal reaction of organic silane material TEOS and oxygen by heating by the heater 4 is similar to the conventional apparatus described above with reference to FIG. It's the same. On the other hand, unreacted material exhausted from the reaction vessel 1 by the pump 7 passes through a plasma reaction chamber 10 attached to the exhaust pipe 8. At the same time, hydrogen is introduced into the plasma reaction chamber 10 from the hydrogen introduction pipe 11. Furthermore, the heater 11 with an induction coil transmits high frequency power and thermal energy to T.
When added to EOS and hydrogen, Si(OC2H5)4+4H2→SiOH+4C2H6
↑The reaction SiOH + SiOH → SiO2 + H2O occurs, and the unreacted material becomes C2H due to the chemical reaction with hydrogen.
6, moisture, and will be decomposed into inorganic products such as SiO2. Therefore, as is clear from these results, it is possible to reduce the amount of deposits on the exhaust pipe 8. Here, FIG. 2 shows the film thickness of deposits adhering to the inner wall of the exhaust pipe 8 in the form of a film with respect to the silicon oxide film formation time.
It can be confirmed that the film thickness is thinner in the case of the present invention shown by the solid line than in the conventional example shown by the broken line in the figure, and contamination by unreacted substances is reduced.

It should be noted that the present invention is not limited to the structure of the above-described embodiments, and it goes without saying that the structure of each part of the semiconductor manufacturing apparatus can be changed or modified as appropriate. For example, in the above embodiment, TEOS, oxygen, and nitrogen were used as the materials, and nitrogen was used as the bubbling gas, but TEOS alone,
Alternatively, it may be a semiconductor manufacturing device using other organic silane materials. In addition, instead of the heater 9 with an induction coil that supplies high-frequency power, a heater and a light source capable of supplying ultraviolet light such as a low-pressure mercury lamp or an excimer laser may be used as a heating means, or a heater and a microwave waveguide may be used together. It goes without saying that the same effect can be achieved even if a structure is adopted in which these three heating means are used together or in combination.

[0008]

As explained above, according to the semiconductor manufacturing apparatus according to the present invention, a plasma reaction chamber, a heating means such as a heater with an induction coil, and a hydrogen introduction pipe are installed in the exhaust pipe from the reaction vessel. Despite the simple configuration, this method reduces the adhesion of unreacted organic silane-based materials to the inner wall of the exhaust pipe, resulting in the formation of a low-contamination, high-quality silicon oxide film and stable growth. There are various excellent effects in that film properties can be obtained.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of an apparatus structure used when forming a silicon oxide film, showing an embodiment of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a characteristic diagram showing the relationship between the film thickness of deposits on the inner wall of the exhaust pipe and the silicon oxide film formation time.

FIG. 3 is a schematic diagram illustrating a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

1 Reaction container 2 for silicon oxide film formation
Board 3 Substrate wafer 4 Heater 5 Flange cap 6 Gate valve 7 Pump 8 Exhaust pipe 9 Heater 10 with induction coil as heating means
Plasma reaction chamber 11 Hydrogen introduction tube

Claims (1)

[Claims] Claim 1: A semiconductor manufacturing apparatus for forming a silicon oxide film on a substrate wafer using an organic silane-based material,
A semiconductor manufacturing apparatus characterized in that a plasma reaction chamber equipped with a heating means is provided in the middle of an exhaust pipe from a reaction container, and a hydrogen introduction pipe is connected to the plasma reaction chamber.