JPH04295854A - Separated function type selenium photosensitive body for electrophotography - Google Patents
Separated function type selenium photosensitive body for electrophotographyInfo
- Publication number
- JPH04295854A JPH04295854A JP8287891A JP8287891A JPH04295854A JP H04295854 A JPH04295854 A JP H04295854A JP 8287891 A JP8287891 A JP 8287891A JP 8287891 A JP8287891 A JP 8287891A JP H04295854 A JPH04295854 A JP H04295854A
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- arsenic
- selenium
- layer
- charge transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 12
- 229910052711 selenium Inorganic materials 0.000 title claims description 12
- 239000011669 selenium Substances 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 13
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 31
- 108091008695 photoreceptors Proteins 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 229910052714 tellurium Inorganic materials 0.000 abstract description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 229910000967 As alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、電子写真用機能分離型
セレン感光体、特に反転現像方式電子写真装置用機能分
離型セレン感光体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a functionally separated selenium photoreceptor for electrophotography, and more particularly to a functionally separated selenium photoreceptor for a reversal development type electrophotographic apparatus.
【0002】0002
【従来の技術】近年その普及が著しいレーザービームプ
リンタにおいては、図2に示す如く導電性基板(1),
電荷移動層(2),電荷発生層(3),必要に応じて設
けられる表面保護層(4)などからなる、いわゆる機能
分離型セレン感光体が多く用いられている。また、現像
方式として反転現像方式、即ち従来の電子写真方式によ
る複写機に広く用いられている、露光部を白地部として
画像を形成する正規現像方式とは逆に、露光部にトナー
を付着させ、未露光部を白地部として画像を形成するい
わゆる反転現像方式が広く用いられている。2. Description of the Related Art Laser beam printers, which have become increasingly popular in recent years, use a conductive substrate (1), as shown in FIG.
So-called functionally separated selenium photoreceptors are often used, which are composed of a charge transfer layer (2), a charge generation layer (3), a surface protection layer (4) provided as necessary, and the like. In addition, the development method is a reversal development method, which is the opposite of the regular development method widely used in conventional electrophotographic copying machines that forms an image with the exposed area as a white background, in which toner is attached to the exposed area. The so-called reversal development method, in which an image is formed using an unexposed area as a white background area, is widely used.
【0003】0003
【発明が解決しようとする課題】ところで、上記のよう
なレーザービームプリンタにおいては、高解像力化に伴
い、トナー粒径もより小さい(10μm以下)ものが使
用されている。粒径の小さいトナーは高解像力には不可
欠であるが、その反面反転現像方式の電子写真プロセス
においては、帯電時の微量な表面電位の乱れでも現像さ
れる為、表面電位が極めて均一になることが要求される
。即ち、帯電時、表面電位が低いところがあると、その
部分が薄く現像され、画像上に“地カブリ”が発生する
。微量な表面電位の乱れの原因は、外観上の欠陥を除く
と、セレン膜の積層の際に、導電性基板との界面の結晶
状態が不均一になり発生することが多い。無定形半導体
において結晶化が進むと暗抵抗が低下し、表面電位は保
持されにくくなる。しかし、界面の結晶化は、基板温度
及び蒸着される材料の温度に対して敏感に影響される為
、この結晶状態を均一にすることは、極めて困難であり
不可能と考える。これらの解決には、界面の結晶化を抑
制することが必要になる。結晶化を抑制する手段として
、基板の温度を低くすることが考えられるが、これでは
残留電位が高くなることのほか、基板と蒸着膜の密着性
が悪くなり不適当な方法である。By the way, in the above-mentioned laser beam printer, toner particles having a smaller particle size (10 μm or less) are being used as resolution becomes higher. Toner with a small particle size is essential for high resolution, but on the other hand, in the electrophotographic process using reverse development, even the slightest disturbance in the surface potential during charging can be used for development, so the surface potential becomes extremely uniform. is required. That is, if there is a part where the surface potential is low during charging, that part will be developed thinly and "background fog" will occur on the image. Excluding defects in appearance, the cause of minute disturbances in surface potential is often caused by non-uniform crystalline state at the interface with the conductive substrate during lamination of selenium films. As crystallization progresses in an amorphous semiconductor, dark resistance decreases, making it difficult to maintain surface potential. However, since the crystallization at the interface is sensitively affected by the substrate temperature and the temperature of the material to be deposited, it is considered extremely difficult and impossible to make this crystalline state uniform. To solve these problems, it is necessary to suppress crystallization at the interface. One possible means of suppressing crystallization is to lower the temperature of the substrate, but this is an inappropriate method because it not only increases the residual potential but also deteriorates the adhesion between the substrate and the deposited film.
【0004】0004
【発明の目的】本発明の目的は、感光体表面の電荷安定
性を向上させ、表面電荷が不均一な為発生する、バック
グランドの地カブリを防止した機能分離型セレン感光体
の提供にある。[Object of the Invention] An object of the present invention is to provide a functionally separated selenium photoreceptor that improves charge stability on the surface of the photoreceptor and prevents background fogging that occurs due to uneven surface charge. .
【0005】[0005]
【課題を解決するための本発明の手段】本発明は、図1
のように、導電性基板(1)と電荷移動層(2)との界
面にセレン−テルル−ヒ素からなるアンダーコート層(
5)を設けることにより、基板と電荷移動層界面の結晶
化を抑制でき、極めて安定した表面電位が得られること
を、実験的研究の結果見いだしてなされたものである。
この場合ヒ素の添加量が多すぎると、電子写真プロセス
において不必要な負帯電が増加され、カット紙で連続印
字した際、2枚目以降の画像に用紙間履歴が残って画像
品質に悪影響を及ぼす為、テルル添加も必要になる。ヒ
素の添加量は1%〜3%が必要であり、テルルの添加量
は10%〜20%が望ましいことが明らかにされ、これ
らを適切に選定することによって安定した表面電荷が得
られ、バックグランドの地カブリを防止することが可能
である。次に、本発明の実施例について説明する。[Means of the present invention for solving the problems] The present invention is based on FIG.
As shown in the figure, an undercoat layer (
5), it was discovered through experimental research that crystallization at the interface between the substrate and the charge transfer layer can be suppressed and an extremely stable surface potential can be obtained. In this case, if the amount of arsenic added is too large, unnecessary negative charge will increase in the electrophotographic process, and when continuous printing is performed on cut paper, inter-paper history will remain on images from the second sheet onward, which will adversely affect image quality. Therefore, it is necessary to add tellurium. It has been revealed that the amount of arsenic added is required to be 1% to 3%, and the amount of tellurium added is preferably 10% to 20%. By selecting these appropriately, a stable surface charge can be obtained and It is possible to prevent ground fogging. Next, examples of the present invention will be described.
【0006】[0006]
【実施例】〔実施例1〕円筒状の導電性アルミニウム基
板上に、アンダーコート層としてテルル15%、ヒ素3
%、膜厚5μmのセレン−テルル−ヒ素合金層を蒸着し
、その上に高純度セレン(99.999%以上の純度)
、あるいは、セレン−ハロゲンからなる膜厚40μmの
電荷移動層を蒸着した。更に、その上にテルル濃度50
%、膜厚0.3μmのセレン−テルル合金からなる電荷
発生層と、最上層にヒ素濃度2%、膜厚4μmのセレン
−ヒ素合金からなる表面保護層を蒸着形成した。
〔実施例2〕アンダーコート層のヒ素濃度を0.5%に
変えたのみで、他は実施例1と同様に形成した。
〔実施例3〕アンダーコート層のヒ素濃度を8%に変え
たのみで、他は実施例1と同様に形成した。
〔実施例4〕アンダーコート層のテルル濃度5%に減量
した。他は実施例1と同様に形成した。
〔実施例5〕アンダーコート層の膜厚を10μmに変え
、35μmの電荷移動層を蒸着した。他は実施例1と同
様に形成した。
〔比較例〕アンダーコート層を設けず、円筒状の導電性
アルミニウム基板上に、高純度セレン(99.999%
以上の純度)、あるいは、セレン−ハロゲンからなる膜
厚45μmの電荷移動層を蒸着した。他は実施例1と同
様に形成した。以上の各実施例及び比較例について粒径
が10μm以下のトナーを用いて地カブリ、用紙間履歴
などの画像特性を求めたところ、表1の如き結果を得た
。これから本発明のように導電性基板と電荷輸送層との
間にセレン−テルル−ヒ素からなるアンダーコート層を
介在させることにより、従来のセレン−テルル感光体に
比し、電子写真プロセスにおける帯電時の表面電荷が安
定して、高解像用の極めて粒径の小さいトナーを使用し
ても、地カブリの発生のない良好画像が得られることが
判る。[Example] [Example 1] On a cylindrical conductive aluminum substrate, 15% tellurium and 3 arsenic were used as an undercoat layer.
%, a selenium-tellurium-arsenic alloy layer with a film thickness of 5 μm is deposited, and high-purity selenium (purity of 99.999% or more) is deposited on top of it.
Alternatively, a 40 μm thick charge transfer layer made of selenium-halogen was deposited. Furthermore, on top of that, the tellurium concentration is 50
A charge generation layer made of a selenium-tellurium alloy with an arsenic concentration of 2% and a thickness of 0.3 μm, and a surface protective layer made of a selenium-arsenic alloy with an arsenic concentration of 2% and a thickness of 4 μm were formed on the uppermost layer by vapor deposition. [Example 2] The undercoat layer was formed in the same manner as in Example 1 except that the arsenic concentration in the undercoat layer was changed to 0.5%. [Example 3] The undercoat layer was formed in the same manner as in Example 1 except that the arsenic concentration in the undercoat layer was changed to 8%. [Example 4] The tellurium concentration of the undercoat layer was reduced to 5%. The other parts were formed in the same manner as in Example 1. [Example 5] The thickness of the undercoat layer was changed to 10 μm, and a charge transfer layer of 35 μm was deposited. The other parts were formed in the same manner as in Example 1. [Comparative example] High purity selenium (99.999%) was coated on a cylindrical conductive aluminum substrate without an undercoat layer.
or a charge transport layer of 45 μm thick made of selenium-halogen was deposited. The other parts were formed in the same manner as in Example 1. When image characteristics such as background fog and interpaper history were determined using toner having a particle size of 10 μm or less for each of the above Examples and Comparative Examples, the results shown in Table 1 were obtained. By interposing an undercoat layer made of selenium-tellurium-arsenic between the conductive substrate and the charge transport layer as in the present invention, the charging time in the electrophotographic process is improved compared to the conventional selenium-tellurium photoreceptor. It can be seen that the surface charge is stable and good images without background fog can be obtained even when a toner with extremely small particle size for high resolution is used.
【表1】[Table 1]
【0007】[0007]
【発明の効果】以上から明らかなように本発明によれば
、極めて粒径の小さいトナーを使用しても地カブリの発
生のない良好な画像を得られる機能分離型セレン感光体
を得ることができるもので、例えばレーザービームプリ
ンタ用感光体としてその効果は大きい。[Effects of the Invention] As is clear from the above, according to the present invention, it is possible to obtain a functionally separated selenium photoreceptor that can obtain good images without background fog even when using toner with an extremely small particle size. For example, it is highly effective as a photoreceptor for a laser beam printer.
【図1】本発明機能分離型感光体の断面構造図である。FIG. 1 is a cross-sectional structural diagram of a functionally separated photoreceptor according to the present invention.
【図2】従来の機能分離型感光体の断面構造図である。FIG. 2 is a cross-sectional structural diagram of a conventional functionally separated photoreceptor.
(1) 導電性基板 (2) 電荷移動層 (3) 電荷発生層 (4) 表面保護層 (5) アンダーコート層 (1) Conductive substrate (2) Charge transfer layer (3) Charge generation layer (4) Surface protective layer (5) Undercoat layer
Claims (2)
層を順次形成し、必要に応じて表面保護層を設けた機能
分離型セレン感光体において、前記電荷移動層と導電性
基板間にセレン−テルル−ヒ素からなるアンダーコート
層を設けたことを特徴とする電子写真用機能分離型セレ
ン感光体。1. A functionally separated selenium photoreceptor in which a charge transfer layer and a charge generation layer are sequentially formed on a conductive substrate, and a surface protective layer is provided as necessary, in which a charge transfer layer and a charge generation layer are provided between the charge transfer layer and the conductive substrate. A functionally separated selenium photoreceptor for electrophotography, characterized in that it is provided with an undercoat layer made of selenium-tellurium-arsenic.
におけるヒ素の濃度を1〜5%、膜厚を2〜10μmと
したことを特徴とする電子写真用機能分離型セレン感光
体。2. The functionally separated selenium photoreceptor for electrophotography according to claim 1, wherein the undercoat layer has an arsenic concentration of 1 to 5% and a film thickness of 2 to 10 μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8287891A JPH04295854A (en) | 1991-03-25 | 1991-03-25 | Separated function type selenium photosensitive body for electrophotography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8287891A JPH04295854A (en) | 1991-03-25 | 1991-03-25 | Separated function type selenium photosensitive body for electrophotography |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04295854A true JPH04295854A (en) | 1992-10-20 |
Family
ID=13786542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8287891A Pending JPH04295854A (en) | 1991-03-25 | 1991-03-25 | Separated function type selenium photosensitive body for electrophotography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04295854A (en) |
-
1991
- 1991-03-25 JP JP8287891A patent/JPH04295854A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS61204637A (en) | Multi-layer type image forming member | |
JPH04295854A (en) | Separated function type selenium photosensitive body for electrophotography | |
JPS61278858A (en) | Selenium photosensitive body for electrophotography | |
JP2962300B2 (en) | Electrophotographic photoreceptor | |
JPS58121044A (en) | Electrophotographic receptor | |
JP3011184B2 (en) | Selenium photoconductor for electrophotography | |
JP3144342B2 (en) | Electrophotographic photoreceptor, method of manufacturing the same, and electrophotographic process using the photoreceptor | |
JPH01112250A (en) | Electrophotographic sensitive body | |
JPH027057B2 (en) | ||
JPS62295057A (en) | Electrophotographic sensitive body and image forming method | |
JP2775477B2 (en) | Electrophotographic photoreceptor | |
JPH03172854A (en) | Electrophotographic functionally separated type selenium photosensitive body | |
JPS61256353A (en) | Electrophotographic selenium photosensitive body | |
JPH027058B2 (en) | ||
JP2629348B2 (en) | Manufacturing method of photoreceptor for electrophotography | |
JPS60163049A (en) | Electrophotographic sensitive body made of selenium | |
JPS6064357A (en) | Electrophotographic sensitive body made of selenium | |
JPH02256084A (en) | Electrophotography device | |
JPS59127058A (en) | Electrophotographic developing agent | |
JPS5816245A (en) | Electrophotographic member | |
JPH073599B2 (en) | Electrophotographic photoreceptor | |
JPH11352713A (en) | Electrophotographic photoreceptor, its production, and electrophotographic process using that photoreceptor | |
JPH021299B2 (en) | ||
JP2000231207A (en) | Electrophotographic photoreceptor | |
JPH04288552A (en) | Electrophotographic sensitive body for digital light input |