JPH04290527A - Method and device for treating waste cvd gas - Google Patents

Method and device for treating waste cvd gas

Info

Publication number
JPH04290527A
JPH04290527A JP3054710A JP5471091A JPH04290527A JP H04290527 A JPH04290527 A JP H04290527A JP 3054710 A JP3054710 A JP 3054710A JP 5471091 A JP5471091 A JP 5471091A JP H04290527 A JPH04290527 A JP H04290527A
Authority
JP
Japan
Prior art keywords
gas
exhaust gas
treatment
cvd
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3054710A
Other languages
Japanese (ja)
Other versions
JPH0671529B2 (en
Inventor
Koji Okayasu
岡安 康次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Ebara Research Co Ltd
Original Assignee
Ebara Research Co Ltd
Ebara Infilco Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Research Co Ltd, Ebara Infilco Co Ltd filed Critical Ebara Research Co Ltd
Priority to JP3054710A priority Critical patent/JPH0671529B2/en
Publication of JPH04290527A publication Critical patent/JPH04290527A/en
Publication of JPH0671529B2 publication Critical patent/JPH0671529B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02CCAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00Capture or disposal of greenhouse gases
    • Y02C20/30Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exhaust Gas Treatment By Means Of Catalyst (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the formation of NOx and to make all harmful gases harmless at a low running cost by heating, oxidizing and decomposing a waste CVD gas and then oxidizing the treated gas by contact with an oxidation catalyst in the presence of oxygen. CONSTITUTION:The waste CVD gas treating device 1 is formed with a heating, oxidizing and decomposing device 2 and a catalytic reaction vessel 3. The waste gas from a waste gas inlet pipe 4, the nitrogen from a nitrogen inlet pipe 5 and the air from an air inlet pipe 6 are introduced into the reaction part 11 of the device 2 to heat, oxidize and decompose the waste gas. The treated gas contg. the reaction product is washed with cooling water 12 in a washing part 13, the waste water contg. the solubles such as F2 and SiF4, SiO2, etc., is discharged outside the system, the waste gas is introduced into the catalytic reaction vessel 3 to oxidize CO, etc., hence the waste gas is cleaned and made harmless. Consequently, the formation of NOx is prevented at a low running cost, and all the harmful gases are made harmless.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、半導体の製造などでお
こなわれているCVD(化学的蒸着)プロセスにおける
排ガス中には未反応のプロセスガス等の有機ソースおよ
びその分解で生成する有機物やCO等の有害成分が含有
されている。本発明はこの有害成分を含有する排ガスを
浄化して無害化することに関するものである。
[Industrial Application Field] The present invention focuses on organic sources such as unreacted process gases and organic substances and CO produced by their decomposition in the exhaust gas of CVD (chemical vapor deposition) processes carried out in the manufacture of semiconductors. Contains harmful ingredients such as The present invention relates to purifying exhaust gas containing harmful components to render it harmless.

【0002】0002

【従来の技術】従来は、湿式スクラバーや活性炭吸着等
で処理されている。湿式スクラバーでの処理は有害成分
の除去率が低いことが問題である。
2. Description of the Related Art Conventionally, treatment has been carried out using a wet scrubber, activated carbon adsorption, or the like. The problem with wet scrubber treatment is that the removal rate of harmful components is low.

【0003】また、活性炭吸着方式は破過した活性炭の
交換費用が高いことやCOの除去ができないことが問題
である。また、TEOS(テトラエトキシシラン)やそ
の分解成分の有機物は可燃性であり、水素ガスやLPG
などを助燃剤として燃焼すれば安価な処理ができるが、
火炎の温度が高くなり、排ガス中の窒素が酸化されてN
OX が生成してしまう。
[0003] Furthermore, the activated carbon adsorption method has problems in that it is expensive to replace activated carbon that has broken through and that CO cannot be removed. In addition, TEOS (tetraethoxysilane) and its decomposed organic substances are flammable, and hydrogen gas and LPG
Cheap treatment can be achieved by burning such substances as combustion improvers, but
As the temperature of the flame increases, nitrogen in the exhaust gas is oxidized and becomes N.
OX will be generated.

【0004】0004

【発明が解決しようとする課題】本発明は従来より低廉
なランニングコストで、NOX 生成を防止し、全ての
有害ガス成分を無害化できるCVD排ガス処理方法およ
びその装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a CVD exhaust gas treatment method and apparatus capable of preventing NOX generation and rendering all harmful gas components harmless at a lower running cost than conventional methods.

【0005】[0005]

【課題を解決するための手段】本発明は、下記■および
■記載の方法および装置であり、これにより上記課題を
解決できる。 ■  CVD排ガスを加熱酸化分解処理した後にその加
熱酸化分解処理したガスを酸素の共存下で酸化触媒と接
触させて酸化処理することを特徴とするCVD排ガス処
理方法。 ■  CVD排ガスを加熱酸化分解する装置および該装
置の後段に設けられ、その加熱酸化分解処理したガスを
酸素の共存下で酸化触媒と接触させて酸化処理する装置
とからなることを特徴とするCVD排ガス処理装置。
[Means for Solving the Problems] The present invention is a method and apparatus described in (1) and (2) below, which can solve the above problems. (2) A method for treating CVD exhaust gas, which comprises subjecting CVD exhaust gas to a heating oxidation decomposition treatment, and then bringing the heated oxidation decomposition treated gas into contact with an oxidation catalyst in the presence of oxygen for oxidation treatment. (1) A CVD device characterized by comprising a device for heating and oxidizing and decomposing CVD exhaust gas, and a device provided after the device for oxidizing the heated and oxidizingly decomposed gas by bringing it into contact with an oxidation catalyst in the presence of oxygen. Exhaust gas treatment equipment.

【0006】本発明は、CVD排ガスを加熱酸化分解処
理し、その処理ガス中に存在する主としてCO等の有害
な未酸化物質を酸素共存の触媒に接触させることにより
酸化処理して無害化処理ガスを得る方法および装置であ
るが、NOXが生成しない温度で酸化処理できるので、
2次汚染を発生させず、安価な処理ができる。
[0006] The present invention subjects CVD exhaust gas to thermal oxidative decomposition treatment, and brings harmful unoxidized substances, mainly CO, present in the treated gas into contact with a catalyst coexisting with oxygen, thereby oxidizing and detoxifying the treated gas. However, since the oxidation treatment can be performed at a temperature that does not produce NOX,
It does not cause secondary contamination and can be processed at low cost.

【0007】本発明は、排ガス中に存在する加熱酸化分
解性物質を加熱酸化分解する装置の反応部の温度コント
ロールができるように構成することができ、電気ヒータ
による加熱方式が適している。
[0007] The present invention can be constructed so that the temperature of the reaction section of an apparatus for thermally oxidatively decomposing substances existing in exhaust gas can be controlled, and a heating method using an electric heater is suitable.

【0008】排ガス中の加熱酸化分解性物質、例えば、
TEOSやアルコール、アルデヒド等は800℃以上で
酸化速度が速いため、装置の経済性およびNOX 生成
の防止を考慮すると反応部の温度は800〜1000℃
が好ましい。
[0008] Heat-oxidative decomposable substances in exhaust gas, for example,
Since TEOS, alcohol, aldehyde, etc. oxidize rapidly at temperatures above 800°C, the temperature of the reaction section should be 800 to 1000°C, considering the economical efficiency of the equipment and the prevention of NOX formation.
is preferred.

【0009】本発明に使用される加熱酸化分解装置によ
る処理は、1000℃以下では排ガス中のCOの酸化率
は50%程度であるが、TEOSの酸化で生成するSi
O2 を水洗等で除去し、有機物をCO2 と水に酸化
分解することにより除去するので、後段の触媒処理装置
でCO酸化、残留有機物酸化等を高速で処理できる。
In the treatment by the thermal oxidation decomposition equipment used in the present invention, the oxidation rate of CO in the exhaust gas is about 50% at temperatures below 1000°C, but the oxidation rate of CO in the exhaust gas is about 50%.
Since O2 is removed by washing with water or the like, and organic matter is removed by oxidative decomposition into CO2 and water, CO oxidation, residual organic matter oxidation, etc. can be processed at high speed in the subsequent catalyst treatment device.

【0010】該触媒は、酸化力があれば特に制限はない
が、特にCO酸化力があるものが好ましい。該触媒とし
て、例示すれば、Cu、Mn、Cu、Co、Cr、Pt
の酸化物が好ましく、これらの一種または二種以上を含
むことができる。また、これらの触媒の形態も任意であ
り、糸上、粉末状、他の材料、例えば、セルロース等と
の複合材料等が使用でき、通常、上記加熱酸化分解処理
したガスの流入口と酸化処理したガスの流出口を設けた
容器内に所望量、充填または装填して用いることができ
る。
[0010] The catalyst is not particularly limited as long as it has an oxidizing power, but a catalyst having a CO oxidizing power is particularly preferred. Examples of the catalyst include Cu, Mn, Cu, Co, Cr, and Pt.
oxides are preferred, and one or more of these oxides may be included. Further, the form of these catalysts is also arbitrary, and can be threaded, powdered, or a composite material with other materials such as cellulose, etc., and is usually connected to the inlet of the gas that has been subjected to the thermal oxidation decomposition treatment and the oxidation treatment. It can be used by filling or loading a desired amount into a container provided with an outlet for the gas.

【0011】該酸化物系触媒は、比較的低温で処理でき
、特に効果的である。その場合、水分や残留する有機物
の影響がなくなる150℃以上であればよい。また、触
媒での酸化速度から加熱酸化分解処理されたガスの触媒
装置におけるSV(流速)は20,000  1/h程
度でも問題ないが、圧損を小さくするためには2000
  1/hから10,000  1/hで処理するのが
望ましい。
The oxide catalyst can be processed at relatively low temperatures and is particularly effective. In that case, the temperature may be 150° C. or higher, which eliminates the influence of moisture and residual organic matter. In addition, from the oxidation rate in the catalyst, the SV (flow velocity) of the gas that has been heated and oxidized and decomposed in the catalyst device is around 20,000 1/h, but there is no problem with it.
It is desirable to process from 1/h to 10,000 1/h.

【0012】ここで、触媒に存在せしめられる酸素の供
給は、加熱酸化分解に必要な酸素を反応部に供給し、加
熱酸化分解に消費した残部を用いてもよいし、別途触媒
に供給するようにしてもよい。
[0012] Here, the oxygen present in the catalyst may be supplied by supplying the oxygen necessary for thermal oxidative decomposition to the reaction part and using the remaining amount consumed in the thermal oxidative decomposition, or by separately supplying the oxygen to the catalyst. You may also do so.

【0013】本発明におけるCVD排ガスとは、CVD
装置からのCVD(化学的蒸着)法に使用されるプロセ
スガスのCVD処理済の排ガスを主とするものではある
が、場合により、CVD装置をクリーニングするめのガ
スを使用した後のクリーニング時の排ガスも包含できる
[0013]CVD exhaust gas in the present invention refers to CVD
This mainly includes CVD-treated exhaust gas of process gas used in the CVD (chemical vapor deposition) method from the equipment, but in some cases, exhaust gas from cleaning after using the gas for cleaning the CVD equipment. can also be included.

【0014】本発明におけるCVD排ガスを与えるCV
D原料、即ちプロセスガスとしては、公知のものが挙げ
られ、例示すれば、無機原料、例えば、モノシラン、ジ
シラン、ジクロルシラン等、有機原料、例えば、TEO
S(テトラエトキシシラン)等があり、これらは1種以
上単独または組み合わせて用いられる。これらの排ガス
には、これらの未反応物あるいはその誘導体、反応分解
物、例えば、H2 、CO、C2 H5 OH等のアル
コール、CH3 CHO等のアルデヒド、C2 H4 
等の炭化水素等の加熱酸化分解性物質が含まれ、加熱酸
化分解されることにより、主として、SiO2 等の金
属酸化物、H2 OとCO2 になる。ここで言う加熱
酸化分解とは、分解不能のものの単なる酸化、例えば、
水素、金属等の単体の酸化等をも包含することは明らか
である。
CV for providing CVD exhaust gas in the present invention
The raw material D, that is, the process gas, includes known ones, such as inorganic raw materials such as monosilane, disilane, dichlorosilane, etc., and organic raw materials such as TEO
There are S (tetraethoxysilane) and the like, and one or more of these may be used alone or in combination. These exhaust gases include these unreacted substances, their derivatives, and reaction decomposition products, such as H2, CO, alcohols such as C2 H5 OH, aldehydes such as CH3 CHO, and C2 H4.
It contains substances that can be decomposed by heating and oxidation such as hydrocarbons, etc., and when it is decomposed by heating and oxidation, it mainly becomes metal oxides such as SiO2, H2O and CO2. Thermal oxidative decomposition referred to here refers to the mere oxidation of something that cannot be decomposed, for example,
It is clear that the term also includes the oxidation of simple substances such as hydrogen and metals.

【0015】クリーニングガスとしては、NF3 、C
F4 、C2 F6 、SF6 、ClF3 などが挙
げられ、クリーニング排ガスは、クリーニングガスとC
VD装置内物質(未排気のCVD処理済物質等)との反
応物、例えば、SiF4 、クリーニングガス誘導体等
、およびクリーニングガスとクリーニングガスにより物
理的にクリーニングしたCVD内物質等からなる。
[0015] As the cleaning gas, NF3, C
Examples include F4, C2 F6, SF6, ClF3, etc., and the cleaning exhaust gas is a combination of cleaning gas and C
It consists of reactants with substances inside the VD apparatus (unexhausted CVD treated substances, etc.), such as SiF4, cleaning gas derivatives, etc., and cleaning gases and substances inside the CVD physically cleaned by the cleaning gas.

【0016】本発明における加熱酸化分解処理の反応条
件、排ガスの導入条件等は特に制限されるものではない
が、少なくとも酸素の共存下に排ガスに含有される加熱
酸化分解性物質が加熱酸化分解されればよい。従って、
排ガスを加熱酸化分解装置に導入する時、同時に酸素が
加熱酸化反応部に存在することが必要である。この酸素
の存在方法は任意であるが、該酸素は通常排ガスと共に
酸素含有ガス、例えば、空気等として導入することが好
ましい。また、加熱酸化分解の条件を調整するために任
意のガスを混在させることができる。例えば、窒素等の
不活性ガス混在させ、該窒素ガスが排ガスを包みかつ酸
素がこれらを包むような3層状態で加熱酸化分解装置の
反応部に導入されることが好ましく、加熱酸化分解装置
にこれらのガス導入部として同心状に管を3層構造にし
たものを配備することが好ましい。
The reaction conditions for the thermal oxidative decomposition treatment in the present invention, the conditions for introducing the exhaust gas, etc. are not particularly limited, but at least the thermal oxidative decomposable substances contained in the exhaust gas are thermally oxidized and decomposed in the presence of oxygen. That's fine. Therefore,
When the exhaust gas is introduced into the thermal oxidation decomposition device, it is necessary that oxygen is present in the thermal oxidation reaction section at the same time. This oxygen may be present in any manner, but it is usually preferable to introduce the oxygen together with the exhaust gas as an oxygen-containing gas, such as air. Furthermore, any gas may be mixed in order to adjust the conditions for thermal oxidative decomposition. For example, it is preferable to mix an inert gas such as nitrogen and introduce the nitrogen gas into the reaction section of the thermal oxidative decomposition device in a three-layered state, in which the nitrogen gas envelops the exhaust gas and the oxygen surrounds them. It is preferable to provide these gas introduction portions with three concentric tube layers.

【0017】また、加熱酸化分解処理における加熱手段
も任意であるが、好ましくは、上述のように電気的に温
度制御可能なヒータ加熱方式が望ましく、通常反応部の
壁内に設けることができる。また、反応部の温度は、8
00〜1000℃の範囲が好ましい。1000℃以上で
あるとN2 ガスの酸化でNOX が生成されるので、
好ましくない。
[0017] The heating means used in the thermal oxidative decomposition treatment is also arbitrary, but preferably a heater heating method capable of electrically controlling the temperature as described above is preferable, and can usually be provided within the wall of the reaction section. In addition, the temperature of the reaction section is 8
The temperature range is preferably from 00 to 1000°C. If the temperature is over 1000℃, NOX will be generated due to oxidation of N2 gas, so
Undesirable.

【0018】本発明において、加熱酸化分解処理された
排ガスはその組成に応じて、そのまま触媒処理装置に移
行させるか、更に他の任意の処理を加えてから触媒処理
装置に移行させることができる。
In the present invention, the exhaust gas subjected to the thermal oxidative decomposition treatment can be directly transferred to the catalyst treatment device, or can be further subjected to any other treatment before being transferred to the catalyst treatment device, depending on its composition.

【0019】特に、本発明においては加熱酸化分解処理
された排ガスを水と接触させること、即ち、水洗処理に
供することが好ましく、これにより、該分解処理により
生成したSiO2 等の金属酸化物微粒子の巻き込みに
よる除去、SiF4 等の水溶性化合物等の可溶化によ
る除去、処理ガスの冷却等を行うことができる。この水
洗処理の方法は任意であるが、噴霧状に処理ガスと接触
させることが好ましい。
In particular, in the present invention, it is preferable to bring the exhaust gas subjected to the thermal oxidative decomposition treatment into contact with water, that is, to subject it to a water washing treatment. Removal by entrainment, solubilization of water-soluble compounds such as SiF4, cooling of the processing gas, etc. can be performed. Although the method for this water washing treatment is arbitrary, it is preferable to contact the treatment gas in the form of a spray.

【0020】この水洗処理されたガスを触媒処理したも
のは、環境に放出もしくは更に所望により他の任意の処
理、例えば、公知の吸着処理等を施すことができ、任意
の排気手段、例えば、排気管等を触媒処理装置に配備す
ることができる。また、水洗排水は排水管等の排水手段
により系外に排出されるが、この排水に更に処理を加え
ることができる。これらの水洗処理手段、排出管等は加
熱酸化分解装置に設けることができる。
The water-washed gas subjected to catalytic treatment can be released into the environment, or can be further subjected to any other treatment as desired, such as known adsorption treatment, and can be discharged by any exhaust means, such as exhaust gas. A tube or the like can be provided in the catalyst treatment device. Furthermore, the washing wastewater is discharged out of the system through a drainage means such as a drain pipe, but this wastewater can be further processed. These water washing treatment means, discharge pipes, etc. can be provided in the heating oxidation decomposition apparatus.

【0021】本発明における加熱酸化分解方式は高温下
で排ガスを酸化分解するために短時間で処理ができるた
めにCVD排ガスが大量であっても除害効率が高く、ま
た、加熱のための電気、空気、窒素、冷却用水(洗浄水
を兼ねる)があれば効率よく処理できるので乾式吸着法
よりランニングコストが低廉である。
The thermal oxidative decomposition method of the present invention oxidizes and decomposes the exhaust gas at high temperatures, so it can be processed in a short time, so even if there is a large amount of CVD exhaust gas, the removal efficiency is high. , air, nitrogen, and cooling water (which also serves as washing water) can be used to efficiently process the process, so the running cost is lower than that of the dry adsorption method.

【0022】本発明は、上記処理工程が一連のものとし
て連続的かつ自動的に行われるようにかつ所望処理条件
を適宜選定できるように制御装置を具備することができ
る。この制御装置は、通常種々の検出装置、例えば、温
度、圧力、水位等のセンサーと連絡され、常に安全でし
かも最適処理が行えるように構成される。
[0022] The present invention can be provided with a control device so that the above processing steps are carried out continuously and automatically as a series, and desired processing conditions can be appropriately selected. This control device is usually connected to various sensing devices, such as sensors for temperature, pressure, water level, etc., and is configured to ensure safe and optimal processing at all times.

【0023】[0023]

【作用】本発明において、加熱酸化分解装置にはCVD
の排ガスと好ましくはスリーブ用の窒素、酸化用の空気
が流入し、800℃以上に加熱されることにより、排ガ
ス中のTEOSや有機物が酸化されてSiO2 、H2
 O、CO2 になる。また、生成したSiO2 は排
気の冷却を兼ねた洗浄水で除去される。以上の作用によ
り酸化率が低いCO以外は無害化される。
[Operation] In the present invention, the thermal oxidation decomposition device is equipped with a CVD
The exhaust gas, preferably nitrogen for the sleeve, and air for oxidation flow in and are heated to 800°C or higher, thereby oxidizing TEOS and organic substances in the exhaust gas to form SiO2 and H2.
It becomes O, CO2. Further, the generated SiO2 is removed by washing water that also serves as a cooling for the exhaust gas. Due to the above-mentioned action, all substances other than CO, which has a low oxidation rate, are rendered harmless.

【0024】排気中のCO等は酸化触媒充填層等からな
る触媒装置を通過することにより、CO2 等に酸化さ
れて無害になる。触媒はMn、Cu酸化物系のものであ
れば常温でもCOの酸化力があるが、水分や有機物が共
存すると活性の低下がはやいために加熱することが望ま
しく、触媒を150℃程度に加熱するのは触媒装置と排
気との熱交換を行えばよく、また、高SVで処理できる
ので触媒装置は非常にコンパクトであり、また、触媒の
寿命が長い。
[0024] CO and the like in the exhaust gas pass through a catalytic device consisting of an oxidation catalyst packed bed, etc., where they are oxidized to CO2 and become harmless. If the catalyst is based on Mn or Cu oxides, it will have the ability to oxidize CO even at room temperature, but if moisture or organic matter coexists, the activity will drop quickly, so it is desirable to heat the catalyst to about 150°C. The reason for this is that heat exchange between the catalyst device and the exhaust gas is performed, and since the process can be performed at a high SV, the catalyst device is very compact and the life of the catalyst is long.

【0025】従って、処理に要するのは加熱用電力、水
および触媒の交換費用であるが、吸着方式と比べてラン
ニングコストは大幅に低減でき、完全処理ができる。
[0025] Therefore, although the treatment requires electricity for heating, water, and the cost of replacing the catalyst, the running cost can be significantly reduced compared to the adsorption method, and complete treatment can be achieved.

【0026】[0026]

【実施例】本発明の具体的実施例を図1に従って説明す
るが、本発明はこれにより限定されない。
EXAMPLE A specific example of the present invention will be described with reference to FIG. 1, but the present invention is not limited thereto.

【0027】図1は、本発明法に使用される処理装置の
一例を示し、本発明のCVD排ガス処理装置1は、加熱
酸化分解装置2と触媒反応槽3とから構成される。加熱
酸化分解装置2は、CVD装置からのCVD排ガスを導
入する排ガス流入管4、排ガス酸化を調整するための窒
素を導入するための窒素流入管5および排ガス中の加熱
酸化分解性物質を酸化するための酸素を供給するための
空気流入管6を同心状に構成した3層構造のガス導入部
7と、ガス導入部から放出されるこれら混合ガス中の排
ガスを加熱酸化分解するための熱源であるセラミックヒ
ータ8を外壁に有すると共に熱電対9、10を配備した
温度制御されている反応部11と、反応部11にて生成
した加熱酸化分解生成物を含む処理ガスを冷却水12に
て水洗処理するための水洗部13とF2 、SiF4 
等の可溶性物質、SiO2 等を含む排水を系外に排出
する排水管14から構成される。
FIG. 1 shows an example of a treatment apparatus used in the method of the present invention, and the CVD exhaust gas treatment apparatus 1 of the present invention is composed of a heating oxidation decomposition apparatus 2 and a catalytic reaction tank 3. The thermal oxidation decomposition device 2 includes an exhaust gas inflow pipe 4 for introducing CVD exhaust gas from the CVD device, a nitrogen inflow pipe 5 for introducing nitrogen for adjusting exhaust gas oxidation, and oxidizing thermal oxidation decomposable substances in the exhaust gas. A three-layered gas introduction section 7 concentrically configured with an air inflow pipe 6 for supplying oxygen to the gas, and a heat source for heating, oxidizing and decomposing the exhaust gas in the mixed gas released from the gas introduction section. A temperature-controlled reaction section 11 having a ceramic heater 8 on the outer wall and equipped with thermocouples 9 and 10, and a processing gas containing heated oxidation decomposition products generated in the reaction section 11 are washed with cooling water 12. Water washing section 13 for processing, F2, SiF4
It is composed of a drain pipe 14 for discharging waste water containing soluble substances such as SiO2, etc., to the outside of the system.

【0028】触媒反応槽3は、加熱酸化分解装置2の後
段に設けられ供給管15を介して水洗処理された処理ガ
スが該触媒反応槽3に導入される。該触媒反応槽3は、
導入されたCO等の酸化すべきガスを酸化処理する酸化
触媒を充填したものであり、ここを通過させることによ
り排ガスを浄化かつ無害化することができ、これを配備
された排気管16より、排出する。尚、17〜19は排
ガス、加熱酸化分解・水洗処理されたガス、触媒処理さ
れたガスの各サンプリング管A,B,Cである。
The catalytic reaction tank 3 is provided downstream of the thermal oxidation decomposition device 2, and the treated gas that has been washed with water is introduced into the catalytic reaction tank 3 through a supply pipe 15. The catalytic reaction tank 3 is
It is filled with an oxidation catalyst that oxidizes the introduced gas to be oxidized, such as CO, and by passing it through, the exhaust gas can be purified and rendered harmless. Discharge. Note that 17 to 19 are sampling tubes A, B, and C for exhaust gas, gas subjected to thermal oxidative decomposition/washing treatment, and gas subjected to catalyst treatment.

【0029】[0029]

【実験例】図1に示した排ガス処理装置を用いて処理試
験を行った。TEOSをプロセスガスとしたCVD排ガ
スの処理結果を表1に示す。
[Experimental Example] A treatment test was conducted using the exhaust gas treatment device shown in Figure 1. Table 1 shows the treatment results of CVD exhaust gas using TEOS as a process gas.

【0030】排ガス量は40L(リットル)/分、加熱
酸化分解装置の処理条件は反応温度900℃、N2 1
0L/分、酸化用空気20L/分、冷却水4L/分とし
た。また、Cu、Mn系触媒を充填したカラムを触媒反
応槽として、これを150℃に加熱して加熱酸化分解装
置の流出ガスをSV5,000で処理した。
[0030] The amount of exhaust gas is 40 L (liter)/min, the processing conditions of the heating oxidation decomposition device are a reaction temperature of 900°C, and N2 1
0 L/min, oxidizing air 20 L/min, and cooling water 4 L/min. Further, a column filled with a Cu, Mn-based catalyst was used as a catalytic reaction tank, and this was heated to 150° C. to treat the outflow gas from the thermal oxidation decomposition device at SV5,000.

【0031】表1に示すように触媒は半年後でも十分な
活性があった。この間の排ガス処理時間2〜6時間/日
であった。
As shown in Table 1, the catalyst had sufficient activity even after half a year. The exhaust gas treatment time during this period was 2 to 6 hours/day.

【0032】[0032]

【表1】[Table 1]

【0033】[0033]

【発明の効果】加熱酸化分解装置とコンパクトな触媒反
応槽との組合せでTEOS系CVD排ガスの有害成分を
完全に除去でき、有害なNOX が生成しない。また、
半年から1年に1回触媒を交換する他は電気、水、窒素
、空気を要するだけなのでメンテナンスが容易で吸着法
と比較して処理費が安価である。
Effects of the Invention: Harmful components of TEOS-based CVD exhaust gas can be completely removed by combining a thermal oxidation decomposition device and a compact catalytic reaction tank, and no harmful NOX is generated. Also,
Besides replacing the catalyst once every six months to a year, this method only requires electricity, water, nitrogen, and air, so maintenance is easy and the treatment cost is lower than that of the adsorption method.

【0034】1000℃以下での酸化処理では有機物が
若干残留するが酸化触媒処理で残留した有機物が酸化さ
れて完全に除去される効果もある。
[0034] In the oxidation treatment at 1000°C or lower, some organic substances remain, but the oxidation catalyst treatment has the effect that the remaining organic substances are oxidized and completely removed.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明ほ方法が適用されるNF3 排ガス処理
装置を説明するための図である。
FIG. 1 is a diagram for explaining an NF3 exhaust gas treatment apparatus to which the method of the present invention is applied.

【符号の説明】[Explanation of symbols]

1  CVD排ガス処理装置 2  加熱酸化分解装置 3  触媒反応槽 4  排ガス流入管 5  窒素流入管 6  空気流入管 7  ガス導入部 8  セラミックヒータ 9  熱電対 10  熱電対 12  冷却水 13  水洗部 14  排水管 15  供給管 16  排気管 17  サンプリング管A 18  サンプリング管B 19  サンプリング管C 1 CVD exhaust gas treatment equipment 2 Heating oxidation decomposition equipment 3 Catalytic reaction tank 4 Exhaust gas inflow pipe 5 Nitrogen inflow pipe 6 Air inflow pipe 7 Gas introduction part 8 Ceramic heater 9 Thermocouple 10 Thermocouple 12 Cooling water 13 Water washing section 14 Drain pipe 15 Supply pipe 16 Exhaust pipe 17 Sampling tube A 18 Sampling tube B 19 Sampling tube C

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  CVD排ガスを加熱酸化分解処理した
後にその加熱酸化分解処理したガスを酸素の共存下で酸
化触媒と接触させて酸化処理することを特徴とするCV
D排ガス処理方法。
1. A CV characterized in that after CVD exhaust gas is subjected to heating oxidation decomposition treatment, the gas subjected to heating oxidation decomposition treatment is brought into contact with an oxidation catalyst in the coexistence of oxygen to perform oxidation treatment.
D Exhaust gas treatment method.
【請求項2】  CVD排ガスを加熱酸化分解する装置
および該装置の後段に設けられ、その加熱酸化分解処理
したガスを酸素の共存下で酸化触媒と接触させて酸化処
理する装置とからなることを特徴とするCVD排ガス処
理装置。
2. A device comprising a device for thermally oxidizing and decomposing CVD exhaust gas, and a device provided after the device for oxidizing the heated, oxidatively decomposed gas by contacting it with an oxidation catalyst in the coexistence of oxygen. Features of CVD exhaust gas treatment equipment.
JP3054710A 1991-03-19 1991-03-19 Method and apparatus for treating CVD exhaust gas Expired - Lifetime JPH0671529B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3054710A JPH0671529B2 (en) 1991-03-19 1991-03-19 Method and apparatus for treating CVD exhaust gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3054710A JPH0671529B2 (en) 1991-03-19 1991-03-19 Method and apparatus for treating CVD exhaust gas

Publications (2)

Publication Number Publication Date
JPH04290527A true JPH04290527A (en) 1992-10-15
JPH0671529B2 JPH0671529B2 (en) 1994-09-14

Family

ID=12978362

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH0671529B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06503995A (en) * 1992-03-13 1994-05-12 リーター・アウトマーティク・ゲゼルシャフト・ミット ベシュレンクテル・ハフツング Process specifically for cleaning exhaust gases from vacuum pyrolysis equipment
WO2000074821A1 (en) * 1999-06-09 2000-12-14 Hitachi, Ltd. Method and apparatus for disposing of fluorine-containing compound by decomposition
US7261868B2 (en) 2001-09-13 2007-08-28 Hitachi, Ltd. Process and apparatus for the decomposition of fluorine compounds
JP2010149082A (en) * 2008-12-26 2010-07-08 Air Liquide Japan Ltd Device of treating exhaust gas containing organic metal compound and method of treating the same
CN102719806A (en) * 2012-06-26 2012-10-10 上海宏力半导体制造有限公司 Deposition device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06503995A (en) * 1992-03-13 1994-05-12 リーター・アウトマーティク・ゲゼルシャフト・ミット ベシュレンクテル・ハフツング Process specifically for cleaning exhaust gases from vacuum pyrolysis equipment
WO2000074821A1 (en) * 1999-06-09 2000-12-14 Hitachi, Ltd. Method and apparatus for disposing of fluorine-containing compound by decomposition
US7294315B1 (en) 1999-06-09 2007-11-13 Hitachi, Ltd. Method and apparatus for disposing of fluorine-containing compound by decomposition
US7261868B2 (en) 2001-09-13 2007-08-28 Hitachi, Ltd. Process and apparatus for the decomposition of fluorine compounds
JP2010149082A (en) * 2008-12-26 2010-07-08 Air Liquide Japan Ltd Device of treating exhaust gas containing organic metal compound and method of treating the same
CN102719806A (en) * 2012-06-26 2012-10-10 上海宏力半导体制造有限公司 Deposition device

Also Published As

Publication number Publication date
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