JPH04287504A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04287504A JPH04287504A JP3052661A JP5266191A JPH04287504A JP H04287504 A JPH04287504 A JP H04287504A JP 3052661 A JP3052661 A JP 3052661A JP 5266191 A JP5266191 A JP 5266191A JP H04287504 A JPH04287504 A JP H04287504A
- Authority
- JP
- Japan
- Prior art keywords
- impedance
- semiconductor device
- insulating layer
- signal electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、パッケージ内に半導
体素子を収めた半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element is housed within a package.
【０００２】0002
【従来の技術】近年、半導体装置の動作速度が増すに伴
い、各装置間に所望の電気信号を送るために、各装置間
のインピーダンスを同一にすることが望まれている。従
来、上記インピーダンスについては、外部信号線および
基板に着眼して対策が施されてきた。2. Description of the Related Art In recent years, as the operating speed of semiconductor devices has increased, it has become desirable to have the same impedance between devices in order to send desired electrical signals between the devices. Conventionally, measures have been taken to reduce the impedance by focusing on external signal lines and substrates.
【０００３】図３は従来の半導体装置の構成を示す斜視
図である。図３に示すように、半導体素子（図示せず）
を内部に収めたパッケージ５からはリードの一部である
アウターリード１２が突出している。このアウターリー
ド１２と半導体素子のボンディングパッド（図示せず）
とは、ボンディングワイヤ（図示せず）により電気的に
接続されている。また、アウターリード１２は、半田等
の導電性材料１１により基板７上に形成した外部信号線
８に電気的に接続されており、単層構造のものである。FIG. 3 is a perspective view showing the structure of a conventional semiconductor device. As shown in FIG. 3, a semiconductor element (not shown)
Outer leads 12, which are part of the leads, protrude from the package 5 that houses the outer leads. Bonding pads (not shown) between this outer lead 12 and the semiconductor element
are electrically connected to each other by bonding wires (not shown). Further, the outer lead 12 is electrically connected to an external signal line 8 formed on the substrate 7 using a conductive material 11 such as solder, and has a single layer structure.
【０００４】0004
【発明が解決しようとする課題】しかしながら、このよ
うに構成された従来の半導体装置では、基板７上に形成
した外部信号線８のインピーダンスと、リードのインピ
ーダンスとが異なっていた。その結果、外部信号線８と
アウターリード１２との接続部で、外部信号線８を流れ
てきた電気信号の一部が反射したり、減衰したりするこ
とにより、周波数の高い電気信号を正確に送ることがで
きないという問題があった。However, in the conventional semiconductor device configured as described above, the impedance of the external signal line 8 formed on the substrate 7 and the impedance of the lead are different. As a result, a portion of the electrical signal flowing through the external signal line 8 is reflected or attenuated at the connection between the external signal line 8 and the outer lead 12, so that high-frequency electrical signals can be accurately transmitted. There was a problem that I couldn't send it.
【０００５】この発明の目的は上記問題点に鑑み、リー
ドのインピーダンスと外部信号線のインピーダンスとを
同一にし、周波数の高い電気信号を正確に送ることので
きる半導体装置を提供することである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a semiconductor device in which the impedance of the lead and the impedance of the external signal line are made the same, and a high frequency electric signal can be accurately sent.
【０００６】[0006]
【課題を解決するための手段】この発明の半導体装置は
、半導体素子の表面に設けたボンディングパッドにボン
ディングワイヤを介して電気的に接続した信号用電極と
、この信号用電極に対向し絶縁層を介して設けたインピ
ーダンス制御用電極とを備えたものである。[Means for Solving the Problems] A semiconductor device of the present invention includes a signal electrode electrically connected to a bonding pad provided on the surface of a semiconductor element via a bonding wire, and an insulating layer facing the signal electrode. and an impedance control electrode provided through the impedance control electrode.
【０００７】[0007]
【作用】この発明の構成によれば、半導体素子の表面に
設けたボンディングパッドにボンディングワイヤを介し
て電気的に接続した信号用電極と、この信号用電極に対
向し絶縁層を介して設けたインピーダンス制御用電極と
を備えることにより、信号用電極，絶縁層およびインピ
ーダンス制御用電極からなるリードのインピーダンスの
値を絶縁層の材質および膜厚を変化させることによって
所望の値に設定することができる。[Operation] According to the structure of the present invention, there is a signal electrode electrically connected to a bonding pad provided on the surface of a semiconductor element via a bonding wire, and a signal electrode provided opposite to the signal electrode via an insulating layer. By including an impedance control electrode, the impedance value of the lead consisting of the signal electrode, insulating layer, and impedance control electrode can be set to a desired value by changing the material and film thickness of the insulating layer. .
【０００８】[0008]
【実施例】図１はこの発明の一実施例の半導体装置の構
成を示す断面図、図２は同半導体装置の構成を示す斜視
図である。図１および図２において、１は信号用電極、
２は絶縁層、３はインピーダンス制御用電極、４は半導
体素子、５はパッケージ、６は信号用電極１と絶縁層２
とインピーダンス制御用電極３からなるリード、７は基
板、８は外部信号線、９はボンディングワイヤ、１０は
半導体装置、１１は半田等の導電性材料を示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view showing the structure of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a perspective view showing the structure of the semiconductor device. In FIGS. 1 and 2, 1 is a signal electrode;
2 is an insulating layer, 3 is an impedance control electrode, 4 is a semiconductor element, 5 is a package, 6 is a signal electrode 1 and an insulating layer 2
7 is a substrate, 8 is an external signal line, 9 is a bonding wire, 10 is a semiconductor device, and 11 is a conductive material such as solder.
【０００９】図１および図２に示すように、リード６は
信号用電極１と絶縁層２とインピーダンス制御用電極３
とからなる。信号用電極１の一端を半導体素子４の表面
に設けたボンディングパッド（図示せず）にボンディン
グワイヤ９により電気的に接続し、他端を基板７上に形
成した外部信号線８に導電性材料１１により接続した。
また、インピーダンス制御用電極３は信号用電極１に対
向して絶縁層２を介して設けたものであり、一端を信号
源となる基板７の配線（図示せず）に導電性材料１１に
より接続した。そして、半導体素子４，ボンディングワ
イヤ９およびリード６の一部をパッケージ５内に収めた
。As shown in FIGS. 1 and 2, the lead 6 includes a signal electrode 1, an insulating layer 2, and an impedance control electrode 3.
It consists of One end of the signal electrode 1 is electrically connected to a bonding pad (not shown) provided on the surface of the semiconductor element 4 by a bonding wire 9, and the other end is connected to an external signal line 8 formed on the substrate 7 using a conductive material. 11. Further, the impedance control electrode 3 is provided opposite to the signal electrode 1 via an insulating layer 2, and one end is connected to a wiring (not shown) of a substrate 7 serving as a signal source using a conductive material 11. did. Then, the semiconductor element 4, bonding wires 9, and a portion of the leads 6 were placed in the package 5.
【００１０】このように構成した半導体装置１０は絶縁
層２の材質および膜厚を変化させることにより、インピ
ーダンス制御用電極３，絶縁層２および信号用電極１か
らなるリード６のインピーダンスの値を所望の設定する
ことができる。これにより、外部信号線８のインピーダ
ンスとリード６のインピーダンスとを同一化することが
でき、周波数の高い電気信号を正確に送ることができる
。In the semiconductor device 10 configured as described above, by changing the material and thickness of the insulating layer 2, the impedance value of the lead 6 consisting of the impedance control electrode 3, the insulating layer 2, and the signal electrode 1 can be adjusted to a desired value. can be set. Thereby, the impedance of the external signal line 8 and the impedance of the lead 6 can be made the same, and a high frequency electric signal can be accurately sent.
【００１１】[0011]
【発明の効果】この発明の半導体装置によれば、半導体
素子の表面に設けたボンディングパッドにボンディング
ワイヤを介して電気的に接続した信号用電極と、この信
号用電極に対向し絶縁層を介して設けたインピーダンス
制御用電極とを備えることにより、信号用電極，絶縁層
およびインピーダンス制御用電極からなるリードのイン
ピーダンスの値を絶縁層の材質および膜厚を変化させる
ことによって所望の値に設定することができる。Effects of the Invention According to the semiconductor device of the present invention, there is a signal electrode electrically connected to a bonding pad provided on the surface of a semiconductor element via a bonding wire, and a signal electrode located opposite to the signal electrode via an insulating layer. The impedance value of the lead consisting of the signal electrode, the insulating layer and the impedance control electrode can be set to a desired value by changing the material and film thickness of the insulating layer. be able to.
【００１２】その結果、リードのインピーダンスと外部
信号線のインピーダンスとを同一にすることができ、周
波数の高い電気信号を正確に送ることのできる半導体装
置を得ることができる。As a result, the impedance of the leads and the impedance of the external signal line can be made the same, and a semiconductor device can be obtained that can accurately send high-frequency electrical signals.
【図１】図１はこの発明の一実施例の半導体装置の構成
を示す断面図である。FIG. 1 is a sectional view showing the configuration of a semiconductor device according to an embodiment of the present invention.
【図２】図２はこの発明の一実施例の半導体装置の構成
を示す斜視図である。FIG. 2 is a perspective view showing the configuration of a semiconductor device according to an embodiment of the present invention.
【図３】図３は従来の半導体装置の構成を示す斜視図で
ある。FIG. 3 is a perspective view showing the configuration of a conventional semiconductor device.
１ 信号用電極 ２ 絶縁層 ３ インピーダンス制御用電極 ４ 半導体素子 ９ ボンディングワイヤ 1 Signal electrode 2 Insulating layer 3. Impedance control electrode 4 Semiconductor device 9 Bonding wire
Claims (1)
グパッドにボンディングワイヤを介して電気的に接続し
た信号用電極と、この信号用電極に対向し絶縁層を介し
て設けたインピーダンス制御用電極とを備えた半導体装
置。1. A signal electrode electrically connected to a bonding pad provided on the surface of a semiconductor element via a bonding wire, and an impedance control electrode provided opposite to the signal electrode via an insulating layer. Semiconductor device equipped with
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3052661A JPH04287504A (en) | 1991-03-18 | 1991-03-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3052661A JPH04287504A (en) | 1991-03-18 | 1991-03-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04287504A true JPH04287504A (en) | 1992-10-13 |
Family
ID=12921052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3052661A Pending JPH04287504A (en) | 1991-03-18 | 1991-03-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04287504A (en) |
-
1991
- 1991-03-18 JP JP3052661A patent/JPH04287504A/en active Pending
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