JPH0427169Y2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to the structure of an airtight container for a stud-type semiconductor device such as a thyristor or a diode.

[Conventional technology]

As a semiconductor device of this type, there is a conventional stud-type semiconductor device shown in a cross-sectional view of FIG.

In FIG. 2, a semiconductor element 1 has an upper electrode 2 consisting of a rod-shaped external lead-out part and a header 6 formed at one end of the lead-out part with a diameter larger than that of the lead-out part.
The lower surface of the header 6 and the stud-shaped lower electrode 3
A metal tube 4 is supported between the upper surface of the lower electrode 3 and mounted on the upper surface of the lower electrode 3 so as to surround the semiconductor element 1, and the contact surface is hermetically joined at the lower end side of the metal tube 4, and the metal tube 4 is supported by being sandwiched between the upper surface of the lower electrode 3 and the upper surface of the lower electrode 3. The insulating cap 5 is provided with an inwardly bent portion 7, and a hat-shaped insulating cap 5 made of an insulating material is mounted on the bent portion 7 in an airtight connection with the metal cylinder 4. A bag-shaped metal storage part is provided to airtightly cover the penetration part on the other end side of the external lead-out part of the upper electrode 2 that passes through a through hole provided at the top, and also has a bag-like metal storage part that passes through a through hole provided at the top of the upper electrode 2 to cover the other end of the external lead-out part of the upper electrode 2. A spring body 8 is disposed in a space between the bent portion 7 and the upper electrode 2, and the spring body 8 is connected to the upper electrode via an insulating ring 9 placed so as to insulate between the spring body 8 and the upper electrode 2. The header 6 of the header 2 and the semiconductor element 1 are brought into pressure contact with the lower electrode 3 side, and the penetrating portion of the upper electrode 2 is fixed in the metal storage part in this pressure contact state. A stud-type semiconductor device is illustrated.
Furthermore, by inserting a metal washer 10 with a diameter larger than the header diameter between the insulating ring 9 and the header 6, the spring pressure from the spring body 8 can be smoothly transmitted to the semiconductor element via the insulating ring 9.
desirable.

[The problem that the idea aims to solve]

Even with this structure, if the voltage applied between the upper and lower electrodes is 1000 V or less, no problem occurs because the insulation between the electrodes is maintained by the insulating ring 9. but,
When the voltage withstand voltage is as high as 1000 V or more, insulation cannot be maintained in the insulating ring 9, and discharge is likely to occur between the upper electrode and the spring body 8 conductively connected to the lower electrode, especially near the inner periphery of the insulating ring 9. I found out.

In order to solve this problem, the insulating ring shown in FIG. 2 has been improved, and FIG. 3 shows that an insulating tube 11 is inserted into the upper electrode so as to penetrate through the inner circumference of the insulating ring 9 in addition to the insulating ring. By doing so, the insulation distance can be increased. However, in this insulating structure, the upper electrode 2 and the insulating cylinder 11 are only held by frictional force, so the holding force is weak, and when vibration is applied to the semiconductor device, the position of the insulating cylinder 11 moves up and down with the upper electrode 2 as an axis. Easy to shift. If it shifts upward, a discharge occurs between the exposed electrode portion and the spring body.

Furthermore, since it is generally difficult to achieve close contact between the end surface of the insulating cylinder 11 and the upper electrode 2, there is a problem in that discharge occurs between the upper electrode 2 and the spring body 8 which are not covered by the insulating cylinder 11.

The purpose of the present invention is to provide a stud type semiconductor device with a high internal breakdown voltage insulation structure.

[Means to solve the problem]

In the present invention, a semiconductor element is connected to the lower surface of the header of an upper electrode consisting of a rod-shaped external lead-out part and a header formed at one end of this lead-out part with a diameter larger than the diameter of this lead-out part, and to the upper surface of a stud-shaped lower electrode. A metal cylinder is sandwiched and supported and further mounted on the upper surface of the lower electrode so as to surround the semiconductor element, the contact surface is hermetically joined at the lower end side, and the inwardly bent portion is bent at the upper end side. Furthermore, a cap-shaped insulating cap made of an insulating material is mounted on the bent portion of the insulating cap in an airtight connection with the metal cylinder, and furthermore, this insulating cap is formed by passing through a through hole provided at the top of the insulating cap. A bag-shaped metal storage part is provided that airtightly covers the penetrating part on the other end side of the external lead-out part of the upper electrode, and a spring body is provided in a space between the inwardly bent part of the metal tube and the upper electrode. The spring body is arranged so that the header of the upper electrode and the semiconductor element are pressed into contact with the lower electrode side through an insulator placed to insulate between the spring body and the upper electrode. In a semiconductor device in which the penetrating portion of the upper electrode is fixed in the metal storage portion in a pressure-contact state, the insulator is connected to a cylindrical portion that penetrates the external lead-out portion of the upper electrode and a flange from the lower portion of the cylindrical portion. By forming a stud-type semiconductor device characterized by having an integral shape with a flange extending in a shape, a higher internal dielectric strength voltage can be obtained.

[Effect]

The present invention has a spring body 8 electrically conductively connected to the lower electrode 3.
By interposing an insulator, that is, an insulating cylinder 12 with a flange, between the upper electrode 2 and the washer 10 that contacts the header 6 of the electrode 2, the insulation distance between both electrodes is lengthened, and the flange of the insulating cylinder 12 is Since it can be fixed by the spring body, it will not shift even if vibration is applied to the semiconductor device, and the dielectric strength between the spring body 8 and the upper electrode 2 will be improved.

〔Example〕

Hereinafter, one embodiment of the present invention will be described in detail using the drawings. The same reference numerals indicate the same or corresponding parts even in different drawings.

FIG. 1 is a sectional view of a stud-type semiconductor device showing an embodiment of the present invention.

A semiconductor element 1 is sandwiched between upper and lower electrodes 2 and 3,
Since the structure hermetically sealed by the metal cylinder 4 and the insulating cap 5 is exactly the same as the structure of the semiconductor element shown in FIG. 2 in the description of the prior art described above, detailed explanation will be omitted here. In the airtight space interior 13 of FIG. 1, in the present invention, an insulating ring 9 and an insulator or By interposing the flanged insulating cylinder 12, the insulation distance between both electrodes is increased, and the upper electrode 2
The dielectric strength between the spring body 8 and the lower electrode 3 is increased. The conventional insulating ring 9 is used when the pressing force of the spring body is strong and there is a high risk that the flanged insulating cylinder 12 alone will be damaged, but the bending strength of the flanged insulating cylinder 12 is sufficiently larger than the pressing force. It is not always necessary. In the present invention, by using the flanged insulating tube 12, the flange of the insulating tube 12 can be fixed with the spring body, so that even if vibration is applied to the semiconductor device, the spring body 8 and the upper electrode 2 will not shift. The dielectric strength between the two has been improved.

[Effects of the invention] In the pressurized contact structure of a stud-type semiconductor device, the present invention applies the pressing force of a spring body to the flange of a flanged insulating tube to bring the semiconductor element and the upper and lower electrodes into pressurized contact. Therefore, we were able to obtain a high internal dielectric strength voltage.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a stud type semiconductor device of the present invention, FIG. 2 is a sectional view showing a conventional stud type semiconductor device, and FIG. 3 is a sectional view of a different conventional stud type semiconductor device. DESCRIPTION OF SYMBOLS 1... Semiconductor element, 2... Upper electrode, 3... Lower electrode, 4... Metal tube, 5... Insulating cap, 6
... Flange of upper electrode, 7... Flange of metal cylinder, 8...
... Spring body, 9 ... Insulation ring, 10 ... Washer, 1
1...Insulating tube, 12...Insulating tube with flange.

Claims (1)

[Scope of utility model registration request] a lower surface of the header of an upper electrode in which the semiconductor element is composed of a rod-shaped external lead-out part and a header formed at one end of the lead-out part with a diameter larger than that of the lead-out part;
A metal tube is sandwiched between and supported by the upper surface of the stud-shaped lower electrode, and further mounted on the upper surface of the lower electrode so as to surround the semiconductor element. It has an inwardly bent part on the side, and a hat-shaped insulating cap made of an insulating material is mounted on the bent part in an airtight connection with the metal tube, and this insulating cap is provided on the top of the insulating cap. A bag-shaped metal storage part is provided, which airtightly covers the penetrating part on the other end side of the external lead-out part of the upper electrode that passes through the through hole, and also includes a bag-shaped metal storage part that passes through the through hole on the other end side of the external lead-out part of the upper electrode. A spring body is placed in the space between the electrode and the spring body presses the header of the upper electrode and the semiconductor element into contact with the lower electrode side through an insulator placed to insulate the spring body and the upper electrode. In the semiconductor device, the penetrating portion of the upper electrode is fixed in the metal housing in the pressurized contact state, and the insulator is provided with a cylinder that penetrates the external lead-out portion of the upper electrode. What is claimed is: 1. A stud-type semiconductor device, characterized in that the cylindrical portion is integrally formed with a flange portion extending in a flange shape from a lower portion of the cylindrical portion.