JPH04269887A - Semiconductor quantum well laser - Google Patents
Semiconductor quantum well laserInfo
- Publication number
- JPH04269887A JPH04269887A JP5336791A JP5336791A JPH04269887A JP H04269887 A JPH04269887 A JP H04269887A JP 5336791 A JP5336791 A JP 5336791A JP 5336791 A JP5336791 A JP 5336791A JP H04269887 A JPH04269887 A JP H04269887A
- Authority
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- Japan
- Prior art keywords
- semiconductor
- layer
- semiconductor layer
- quantum well
- semiconductor region
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 373
- 238000005381 potential energy Methods 0.000 claims abstract description 62
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 20
- 238000005253 cladding Methods 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】0001
【従来の技術】従来、図２２〜図２７を伴って、次に述
べる半導体量子井戸レ―ザが提案されている。2. Description of the Related Art Conventionally, the following semiconductor quantum well laser has been proposed with reference to FIGS. 22 to 27.
【０００２】すなわち、ｎ型を有し且つ例えばＩｎＰで
なる半導体基板１を有し、その半導体基板１上に、ｎ型
を有し且つ例えばＩｎＰでなるクラッド層としての半導
体層２と、例えばＩｎＧａＡｓ系でなり且つｎ型または
ｐ型を与える不純物を意図的に導入させていないか導入
させているとしても十分低い濃度でしか導入させていな
い、光ガイド兼量子閉込め層としての半導体層３とが、
それらの順に積層して形成されている。That is, it has a semiconductor substrate 1 having n-type and made of, for example, InP, and on the semiconductor substrate 1, a semiconductor layer 2 as a cladding layer having n-type and made of, for example, InP, and a semiconductor layer 2 of, for example, InGaAs. a semiconductor layer 3 which serves as a light guide and quantum confinement layer, and has not intentionally introduced an impurity that gives n-type or p-type, or has introduced it only at a sufficiently low concentration. but,
They are formed by laminating them in that order.
【０００３】この場合、図２３〜図２７に示すように、
クラッド層としての半導体層２は、各部一様な、比較的
高いポテンシャルエネルギを有し、また、光ガイド兼量
子閉込め層としての半導体層３が、各部同じクラッド層
としての半導体層２に比し低いポテンシャルエネルギを
有している。In this case, as shown in FIGS. 23 to 27,
The semiconductor layer 2 as a cladding layer has relatively high potential energy that is uniform in each part, and the semiconductor layer 3 as a light guide and quantum confinement layer has a uniform potential energy in each part compared to the semiconductor layer 2 as a cladding layer. and has low potential energy.
【０００４】また、半導体層３上に、例えばＩｎＧａＡ
ｓ系でなり且つｎ型またはｐ型を与える不純物を意図的
に導入させていないか導入させているとしても十分低い
濃度でしか導入させていないとともに、量子細線構造ま
たは量子箱構造を有する活性層としての半導体層４が形
成されている。[0004] Also, on the semiconductor layer 3, for example, InGaA
An active layer that is s-based and does not intentionally introduce an impurity that gives n-type or p-type, or if it is introduced, it is only introduced at a sufficiently low concentration, and has a quantum wire structure or a quantum box structure. A semiconductor layer 4 is formed.
【０００５】この場合、活性層としての半導体層４が、
図２３〜図２７に示すように、各部いちような、光ガイ
ド兼量子閉込め層としての半導体層３に比し低いポテン
シャルエネルギを有している。In this case, the semiconductor layer 4 as an active layer is
As shown in FIGS. 23 to 27, each part has a lower potential energy than the semiconductor layer 3 which serves as a light guide and quantum confinement layer.
【０００６】さらに、半導体層３上に、ｎ型またはｐ型
を与える不純物を意図的に導入させていないか導入させ
ているとしても十分低い濃度でしか導入させていないと
ともに、半導体層４を覆って埋置するように形成されて
いる光ガイド兼量子閉込め層としての半導体層５が形成
されている。Furthermore, impurities that give n-type or p-type characteristics are not intentionally introduced onto the semiconductor layer 3 , or even if they are, they are only introduced at a sufficiently low concentration, and the impurities do not cover the semiconductor layer 4 . A semiconductor layer 5 serving as a light guide and a quantum confinement layer is formed so as to be buried therein.
【０００７】この場合、光ガイド兼量子閉込め層として
の半導体層５が、図２３〜図２７に示すように、各部一
様な、活性層としての半導体層４に比し高い、実際上は
、光ガイド兼量子閉込め層としての半導体層３と同じポ
テンシャルエネルギを有している。In this case, as shown in FIGS. 23 to 27, the semiconductor layer 5 serving as a light guide and quantum confinement layer has a higher density than the semiconductor layer 4 serving as an active layer, which is uniform in each part. , has the same potential energy as the semiconductor layer 3 which serves as a light guide and quantum confinement layer.
【０００８】また、半導体層５上に、ｐ型を有し且つ例
えばＩｎＰでなるクラッド層としての半導体層６と、ｐ
＋ 型を有し且つ例えばＩｎＧａＡｓでなるキャップ層
としての半導体層７とが、それらの順に積層して形成さ
れている。Further, on the semiconductor layer 5, a semiconductor layer 6 as a cladding layer having p-type and made of InP, for example, and a p
A semiconductor layer 7 as a cap layer having a + type and made of, for example, InGaAs is laminated in this order.
【０００９】この場合、クラッド層としての半導体層６
が、図２３〜図２７に示すように、各部一様な、光ガイ
ド兼量子閉込め層としての半導体層５に比し高い、実際
上は、クラッド層としての半導体層２と同じポテンシャ
ルエネルギを有している。In this case, the semiconductor layer 6 as a cladding layer
However, as shown in FIGS. 23 to 27, the potential energy is higher than that of the semiconductor layer 5 which is uniform in each part and serves as a light guide and quantum confinement layer, but actually has the same potential energy as the semiconductor layer 2 which serves as a cladding layer. have.
【００１０】さらに、半導体層７上に、電極層８が形成
され、一方、半導体基板１の半導体層２側とは反対側の
面上に、他の電極層９が形成されている。Furthermore, an electrode layer 8 is formed on the semiconductor layer 7, while another electrode layer 9 is formed on the surface of the semiconductor substrate 1 opposite to the semiconductor layer 2 side.
【００１１】以上が、従来提案されている半導体量子井
戸レ―ザの構成である。The above is the structure of the conventionally proposed semiconductor quantum well laser.
【００１２】このような構成を有する半導体量子井戸レ
―ザによれば、電極層８及び９間に、電極層８を正とす
る電源を接続すれば、内部に活性層としての半導体層４
を通る電流が流れることによって、その活性層としての
半導体層４に発光が得られ、その光が、その活性層とし
ての半導体層４を含めて、光ガイド兼量子閉込め層とし
ての半導体層３及び５に、クラッド層としての半導体層
２及び６によって閉込められて、案内されて伝播し、そ
して半導体層３及び５の両端面（紙面と平行なまたは紙
面と垂直な）上で反射し、よって、レ―ザ発振が得られ
、従って、それにもとずくレーザ光が、半導体層３及び
５の一方端面から外部に出射して得られる。According to the semiconductor quantum well laser having such a configuration, if a power source with electrode layer 8 as positive is connected between electrode layers 8 and 9, semiconductor layer 4 as an active layer is formed inside.
When a current flows through the semiconductor layer 4 as an active layer, light is emitted, and the light is transmitted to the semiconductor layer 3 as a light guide and quantum confinement layer, including the semiconductor layer 4 as an active layer. and 5, it is confined by the semiconductor layers 2 and 6 as cladding layers, is guided and propagated, and is reflected on both end faces (parallel to the page or perpendicular to the page) of the semiconductor layers 3 and 5, Therefore, laser oscillation is obtained, and the laser light based thereon is emitted to the outside from one end surface of the semiconductor layers 3 and 5.
【００１３】また、図２２〜図２７に示す従来の半導体
量子井戸レ―ザの場合、活性層としての半導体層４が量
子細線構造または量子箱構造を有しているので、半導体
層が光ガイド兼量子閉込め層としての半導体層３上にそ
の全域に亘って延長していることによって量子細線構造
または量子箱構造を有していない場合に比し、閾値電流
、スペクトル線幅などの点で、良好なレ―ザ発振特性が
得られる。Furthermore, in the case of the conventional semiconductor quantum well laser shown in FIGS. 22 to 27, the semiconductor layer 4 as an active layer has a quantum wire structure or a quantum box structure, so that the semiconductor layer serves as a light guide. By extending over the entire area of the semiconductor layer 3, which also serves as a quantum confinement layer, it is improved in terms of threshold current, spectral line width, etc., compared to a case without a quantum wire structure or a quantum box structure. , good laser oscillation characteristics can be obtained.
【００１４】[0014]
【発明が解決しようとする課題】図２２〜図２７に示す
従来の半導体量子井戸レ―ザの場合、活性層としての半
導体層４が量子細線構造または量子箱構造を有している
ので、上述したように良好なレ―ザ発振特性が得られる
が、電極層８及び９を通って、内部に電流が流れるとき
、その電流の一部のみしか、半導体層４を通って流れず
、他部は光ガイド兼量子閉込め層を通って流れる。[Problems to be Solved by the Invention] In the case of the conventional semiconductor quantum well laser shown in FIGS. 22 to 27, the semiconductor layer 4 as an active layer has a quantum wire structure or a quantum box structure. Although good laser oscillation characteristics can be obtained as described above, when a current flows inside through the electrode layers 8 and 9, only a part of the current flows through the semiconductor layer 4, and the other part flows through the light guide and quantum confinement layer.
【００１５】このため、図２２〜図２７に示す従来の半
導体量子井戸レ―ザの場合、レーザ光が効率良く得られ
ない、という欠点を有していた。For this reason, the conventional semiconductor quantum well lasers shown in FIGS. 22 to 27 have the disadvantage that laser light cannot be obtained efficiently.
【００１６】よって、本発明は、上述した欠点のない、
新規な半導体量子井戸レ―ザを提案せんとするものであ
る。[0016] Therefore, the present invention is free from the above-mentioned drawbacks.
This paper aims to propose a new semiconductor quantum well laser.
【００１７】[0017]
【課題を解決するための手段】本願第１番目の発明によ
る半導体量子井戸レ―ザは、図２２〜図２７で前述した
従来の半導体量子井戸レ―ザの場合と同様に、（ｉ）光
ガイド兼量子閉込め層としての第１の半導体層と、（ｉ
ｉ）上記第１の半導体層上に形成されている活性層とし
ての量子細線構造または量子箱構造を有する第２の半導
体層と、（ｉｉｉ）上記第１の半導体層上に上記第２の
半導体層を覆って埋置するように形成されている光ガイ
ド兼量子閉込め層としての第３の半導体層とを有する。[Means for Solving the Problems] The semiconductor quantum well laser according to the first invention of the present application has the following features as in the case of the conventional semiconductor quantum well laser described above with reference to FIGS. a first semiconductor layer serving as a guide and a quantum confinement layer, and (i
i) a second semiconductor layer having a quantum wire structure or quantum box structure as an active layer formed on the first semiconductor layer; and (iii) a second semiconductor layer formed on the first semiconductor layer. A third semiconductor layer is formed to cover and embed the third semiconductor layer as a light guide and quantum confinement layer.
【００１８】しかしながら、本願第１番目の発明による
半導体量子井戸レ―ザは、このような構成を有する半導
体量子井戸レ―ザにおいて、（ｉｖ）上記第３の半導体
層が、上記第２の半導体層の側面上の第１の半導体領域
と、その第１の半導体領域以外の第２の半導体領域とで
なり、そして、（ｖ）上記第３の半導体層の第１の半導
体領域が、上記第１の半導体層、及び上記第３の半導体
層の第２の半導体領域に比し高いポテンシャルエネルギ
を有する。However, in the semiconductor quantum well laser according to the first invention of the present application, in the semiconductor quantum well laser having such a configuration, (iv) the third semiconductor layer is (v) the first semiconductor region of the third semiconductor layer is the first semiconductor region on the side surface of the layer and the second semiconductor region other than the first semiconductor region; It has a higher potential energy than the first semiconductor layer and the second semiconductor region of the third semiconductor layer.
【００１９】また、本願第２番目の発明による半導体量
子井戸レ―ザは、本願第１番目の発明による半導体量子
井戸レ―ザの場合と同様に且つ図２２〜図２７で前述し
た従来の半導体量子井戸レ―ザの場合と同様に、（ｉ）
光ガイド兼量子閉込め層としての第１の半導体層と、（
ｉｉ）上記第１の半導体層上に形成されている活性層と
しての量子細線構造または量子箱構造を有する第２の半
導体層と、（ｉｉｉ）上記第１の半導体層上に上記第２
の半導体層を覆って埋置するように形成されている光ガ
イド兼量子閉込め層としての第３の半導体層とを有する
。Further, the semiconductor quantum well laser according to the second invention of the present application is similar to the semiconductor quantum well laser according to the first invention of the present application, and is similar to the semiconductor quantum well laser according to the first invention of the present application, and is similar to the conventional semiconductor quantum well laser described above with reference to FIGS. As in the case of quantum well lasers, (i)
a first semiconductor layer serving as a light guide and quantum confinement layer;
ii) a second semiconductor layer having a quantum wire structure or a quantum box structure as an active layer formed on the first semiconductor layer; and (iii) a second semiconductor layer formed on the first semiconductor layer;
and a third semiconductor layer serving as a light guide and quantum confinement layer, which is formed so as to cover and bury the semiconductor layer.
【００２０】しかしながら、本願第２番目の発明による
半導体量子井戸レ―ザは、このような構成を有する半導
体量子井戸レ―ザにおいて、（ｉｖ）上記第３の半導体
層が、上記第２の半導体層の側面上の第１の半導体領域
と、上記第２の半導体層上の第２の半導体領域と、上記
第１の半導体領域上の第３の半導体領域とでなり、また
、（ｖ）上記第１の半導体層が、上記第２の半導体層下
の第４の半導体領域と上記第３の半導体層の第１の半導
体領域下の第５の半導体領域とでなり、そして、（ｖｉ
）上記第１の半導体層の第５の半導体領域が、上記第１
の半導体層の第４の半導体領域に比し高いポテンシャル
エネルギを有し、また、（ｖｉｉ）上記第３の半導体層
の第３の半導体領域が、上記第３の半導体層の第２の半
導体領域に比し高いポテンシャルエネルギを有する。However, in the semiconductor quantum well laser according to the second invention of the present application, in the semiconductor quantum well laser having such a configuration, (iv) the third semiconductor layer is a first semiconductor region on a side surface of the layer, a second semiconductor region on the second semiconductor layer, and a third semiconductor region on the first semiconductor region; The first semiconductor layer includes a fourth semiconductor region under the second semiconductor layer and a fifth semiconductor region under the first semiconductor region of the third semiconductor layer, and (vi
) the fifth semiconductor region of the first semiconductor layer is the first semiconductor region of the first semiconductor layer;
(vii) the third semiconductor region of the third semiconductor layer has a higher potential energy than the fourth semiconductor region of the third semiconductor layer; It has high potential energy compared to .
【００２１】本願第３番目の発明による半導体量子井戸
レ―ザは、本願第２番目の発明による半導体量子井戸レ
―ザにおいて、上記第３の半導体層の第１の半導体領域
が、上記第１の半導体層の第５の半導体領域、及び上記
第３の半導体層の第３の半導体領域に比し高いポテンシ
ャルエネルギを有する。A semiconductor quantum well laser according to a third aspect of the present invention is a semiconductor quantum well laser according to a second aspect of the present invention, in which the first semiconductor region of the third semiconductor layer is The potential energy is higher than that of the fifth semiconductor region of the semiconductor layer and the third semiconductor region of the third semiconductor layer.
【００２２】[0022]
【作用・効果】本願第１番目の発明による半導体量子井
戸レ―ザによれば、第３の半導体層の第１の半導体領域
が第３の半導体層の第２の半導体領域と同じポテンシャ
ルエネルギを有し、従って第３の半導体層が各部一様な
ポテンシャルエネルギを有しているとすれば、図２２〜
図２７で前述した従来の半導体量子井戸レ―ザと同様の
構成を有するので、内部に電流を流せば、図２２〜図２
７で前述した従来の半導体量子井戸レ―ザの場合と同様
に、レ―ザ発振にもとずくレーザ光を、良好な特性を有
して得ることができる。[Operation/Effect] According to the semiconductor quantum well laser according to the first invention of the present application, the first semiconductor region of the third semiconductor layer has the same potential energy as the second semiconductor region of the third semiconductor layer. Therefore, if the third semiconductor layer has uniform potential energy in each part, then FIGS.
Since it has the same configuration as the conventional semiconductor quantum well laser described above with reference to FIG. 27, if a current is caused to flow inside,
As in the case of the conventional semiconductor quantum well laser described in Section 7, laser light based on laser oscillation can be obtained with good characteristics.
【００２３】しかしながら、本願第１番目の発明による
半導体量子井戸レ―ザの場合、第３の半導体層の第１の
半導体領域が、第１の半導体層及び第３の半導体層の第
２の半導体領域に比し高いポテンシャルエネルギを有す
るので、内部に流れる電流のほとんどが、活性層として
の第２の半導体層に流れる。However, in the case of the semiconductor quantum well laser according to the first invention of the present application, the first semiconductor region of the third semiconductor layer is connected to the second semiconductor region of the first semiconductor layer and the third semiconductor layer. Since it has a higher potential energy than the other regions, most of the current flowing inside flows to the second semiconductor layer as an active layer.
【００２４】このため、本願第１番目の発明による半導
体量子井戸レ―ザの場合、レーザ光を、図２２〜図２７
で前述した従来の半導体量子井戸レ―ザの場合に比し効
率良く得ることができる。Therefore, in the case of the semiconductor quantum well laser according to the first invention of the present application, the laser beam is
This can be achieved more efficiently than in the case of the conventional semiconductor quantum well laser described above.
【００２５】本願第２番目の発明による半導体量子井戸
レ―ザによれば、第３の半導体層の第３の半導体領域が
第２の半導体領域と同じポテンシャルエネルギを有し、
従って、第３の半導体層が各部一様なポテンシャルエネ
ルギを有しており、また、第１の半導体層の第５の半導
体領域が第４の半導体領域と同じポテンシャルエネルギ
を有し、従って第１の半導体層が各部一様なポテンシャ
ルエネルギを有しているとすれば、図２２〜図２７で前
述した従来の半導体量子井戸レ―ザの場合と同様の構成
を有するので、内部に電流を流せず、図２２〜図２７で
前述した従来の半導体量子井戸レ―ザの場合と同様に、
レ―ザ発振にもとずくレーザ光を、良好な特性を有して
得ることができる。According to the semiconductor quantum well laser according to the second invention of the present application, the third semiconductor region of the third semiconductor layer has the same potential energy as the second semiconductor region,
Therefore, each part of the third semiconductor layer has uniform potential energy, and the fifth semiconductor region of the first semiconductor layer has the same potential energy as the fourth semiconductor region, so that the fifth semiconductor region of the first semiconductor layer has the same potential energy as the fourth semiconductor region. Assuming that each part of the semiconductor layer has uniform potential energy, the structure is similar to that of the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27. First, as in the case of the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27,
Laser light based on laser oscillation can be obtained with good characteristics.
【００２６】しかしながら、本願第２番目の発明による
半導体量子井戸レ―ザの場合、第３の半導体層の第３の
半導体領域が第２の半導体領域に比し高いポテンシャル
エネルギを有しているとともに、第１の半導体層の第５
の半導体領域が第４の半導体領域に比し高いポテンシャ
ルエネルギを有しているので、内部に流れる電流のほと
んどが、本願第１番目の発明による半導体量子井戸レ―
ザの場合と同様に、活性層としての第２の半導体層に流
れる。However, in the case of the semiconductor quantum well laser according to the second invention of the present application, the third semiconductor region of the third semiconductor layer has higher potential energy than the second semiconductor region, and , the fifth of the first semiconductor layer
Since the semiconductor region has a higher potential energy than the fourth semiconductor region, most of the current flowing inside the semiconductor quantum well laser according to the first invention of the present application has a higher potential energy than the fourth semiconductor region.
Similarly to the case of the laser, the current flows to the second semiconductor layer as the active layer.
【００２７】このため、本願第２番目の発明による半導
体量子井戸レ―ザの場合も、本願第１番目の発明による
半導体量子井戸レ―ザの場合と同様に、レーザ光を、図
２２〜図２７で前述した従来の半導体量子井戸レ―ザの
場合に比し効率良く得ることができる。Therefore, in the case of the semiconductor quantum well laser according to the second invention of the present application, similarly to the case of the semiconductor quantum well laser according to the first invention of the present application, the laser beam is This can be achieved more efficiently than in the case of the conventional semiconductor quantum well laser mentioned above in No. 27.
【００２８】本願第３番目の発明による半導体量子井戸
レ―ザは、上述した事項を除いて、本願第２番目の発明
による半導体量子井戸レ―ザと同様の構成を有するので
、詳細説明は省略するが、本願第２番目の発明による半
導体量子井戸レ―ザの場合と同様の作用効果が、より確
実に得られる。The semiconductor quantum well laser according to the third invention of the present application has the same structure as the semiconductor quantum well laser according to the second invention of the present application, except for the above-mentioned matters, so detailed explanation will be omitted. However, the same effects as in the case of the semiconductor quantum well laser according to the second invention of the present application can be obtained more reliably.
【００２９】[0029]
【実施例１】次に、図１〜図６を伴って、本発明による
半導体量子井戸レ―ザの第１の実施例を述べよう。[Embodiment 1] Next, a first embodiment of a semiconductor quantum well laser according to the present invention will be described with reference to FIGS. 1 to 6.
【００３０】図１〜図６において、図２２〜図２７との
対応部分には同一符号を付し詳細説明を省略する。In FIGS. 1 to 6, parts corresponding to those in FIGS. 22 to 27 are designated by the same reference numerals, and detailed description thereof will be omitted.
【００３１】図１〜図６に示す本発明による半導体量子
井戸レ―ザは、次の事項を除いて図２２〜図２７で前述
した従来の半導体量子井戸レ―ザの場合と同様の構成を
有する。The semiconductor quantum well laser according to the present invention shown in FIGS. 1 to 6 has the same structure as the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27, except for the following points. have
【００３２】すなわち、光ガイド兼量子閉込め層として
の半導体層５が、活性層としての半導体層４の側面上の
半導体領域５Ｂ′と、その半導体領域５Ｂ′以外の半導
体領域５Ｃとでなり、そして、半導体領域５Ｂ′が、図
２〜図６に示すように、光ガイド兼量子閉込め層として
の半導体層４及び半導体領域５Ｃに比し高いポテンシャ
ルエネルギを有している。That is, the semiconductor layer 5 serving as a light guide and quantum confinement layer consists of a semiconductor region 5B' on the side surface of the semiconductor layer 4 as an active layer, and a semiconductor region 5C other than the semiconductor region 5B', As shown in FIGS. 2 to 6, the semiconductor region 5B' has a higher potential energy than the semiconductor layer 4 and the semiconductor region 5C, which serve as a light guide and quantum confinement layer.
【００３３】なお、半導体領域５Ｂ′及び５Ｃは、とも
に、図２２〜図２７で前述した従来の半導体量子井戸レ
―ザの場合の半導体層５と同じＩｎＧａＡｓ系でなるも
のとし得る。The semiconductor regions 5B' and 5C may both be made of the same InGaAs material as the semiconductor layer 5 in the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27.
【００３４】以上が、本発明による半導体量子井戸レ―
ザの第１の実施例の構成である。このような構成を有す
る本発明による半導体量子井戸レ―ザによれば、上述し
た事項を除いて、図２２〜図２７で前述した従来の半導
体量子井戸レ―ザの場合と同様の構成を有するので、詳
細説明は省略するが、電極層８及び９を通じて、内部に
電流を流せば、図２２〜図２７で前述した従来の半導体
量子井戸レ―ザの場合と同様に、レ―ザ発振にもとずく
レーザ光を良好な特性を有して得ることができる。The above describes the semiconductor quantum well layer according to the present invention.
This is the configuration of the first embodiment. The semiconductor quantum well laser according to the present invention having such a configuration has the same configuration as the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27, except for the matters mentioned above. Therefore, detailed explanation will be omitted, but if a current is caused to flow inside through the electrode layers 8 and 9, laser oscillation will occur as in the case of the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27. The original laser beam can be obtained with good characteristics.
【００３５】しかしながら、図１〜図６に示す本発明に
よる半導体量子井戸レ―ザの場合、光ガイド兼量子閉込
め層としての半導体層５の半導体領域５Ｂ′が、半導体
層３及び半導体層５の半導体領域５Ｃに比し高いポテン
シャルエネルギを有するので、内部に流れる電流のほと
んどが、活性層としての半導体層４に流れる。However, in the case of the semiconductor quantum well laser according to the present invention shown in FIGS. 1 to 6, the semiconductor region 5B' of the semiconductor layer 5 serving as the light guide and quantum confinement layer is Since it has a higher potential energy than the semiconductor region 5C, most of the current flowing inside flows to the semiconductor layer 4 as an active layer.
【００３６】このため、図１〜図６に示す本発明による
半導体量子井戸レ―ザの場合、レーザ光を、図２２〜図
２７で前述した従来の半導体量子井戸レ―ザの場合に比
し効率良く得ることができる。For this reason, in the case of the semiconductor quantum well laser according to the present invention shown in FIGS. 1 to 6, the laser beam is emitted more slowly than in the case of the conventional semiconductor quantum well laser described above in FIGS. 22 to 27. can be obtained efficiently.
【００３７】[0037]
【実施例２】次に、図７〜図１２を伴って、本発明によ
る半導体量子井戸レ―ザの第２の実施例を述べよう。[Embodiment 2] Next, a second embodiment of the semiconductor quantum well laser according to the present invention will be described with reference to FIGS. 7 to 12.
【００３８】図７〜図１２において、図２２〜図２７と
の対応部分には同一符号を付し詳細説明を省略する。In FIGS. 7 to 12, parts corresponding to those in FIGS. 22 to 27 are designated by the same reference numerals, and detailed description thereof will be omitted.
【００３９】図７〜図１２に示す本発明による半導体量
子井戸レ―ザは、次の事項を除いて図２２〜図２７で前
述した従来の半導体量子井戸レ―ザの場合と同様の構成
を有する。The semiconductor quantum well laser according to the present invention shown in FIGS. 7 to 12 has the same structure as the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27, except for the following points. have
【００４０】すなわち、光ガイド兼量子閉込め層として
の半導体層５が、活性層としての半導体層４の側面上の
半導体領域５Ｂ′と、半導体層４上の半導体領域５Ａと
、半導体領域５Ｂ′上の半導体領域５Ｂとでなり、また
、光ガイド兼量子閉込め層としての半導体層３が、活性
層としての半導体層２下の半導体領域３Ａと、半導体層
５の半導体領域５Ｂ′下の半導体層３Ｂとでなり、そし
て、図８〜図１２に示すように、半導体層２の半導体領
域３Ｂが半導体領域に比し高いポテンシャルエネルギを
有し、また、半導体層５の半導体領域５Ｂが半導体領域
５Ａに比し高いポテンシャルエネルギを有し、さらに、
半導体層５の半導体領域５Ｂ′は、半導体領域５Ｂと同
じまたはそれに比し低いポテンシャルエネルギを有して
いる。That is, the semiconductor layer 5 serving as a light guide and quantum confinement layer includes a semiconductor region 5B' on the side surface of the semiconductor layer 4 as an active layer, a semiconductor region 5A on the semiconductor layer 4, and a semiconductor region 5B'. The semiconductor layer 3 serving as a light guide and quantum confinement layer serves as the semiconductor region 3A below the semiconductor layer 2 as an active layer, and the semiconductor layer 5 below the semiconductor region 5B' of the semiconductor layer 5. As shown in FIGS. 8 to 12, the semiconductor region 3B of the semiconductor layer 2 has a higher potential energy than the semiconductor region, and the semiconductor region 5B of the semiconductor layer 5 has a higher potential energy than the semiconductor region. It has higher potential energy than 5A, and furthermore,
The semiconductor region 5B' of the semiconductor layer 5 has the same potential energy as the semiconductor region 5B or a lower potential energy than the semiconductor region 5B.
【００４１】なお、半導体領域５Ｂ及び５Ｂ′が同じポ
テンシャルエネルギを有するとき、それらは、同時に同
じ材料で、同時に形成し得る。Note that when semiconductor regions 5B and 5B' have the same potential energy, they can be formed at the same time and from the same material.
【００４２】以上が、本発明による半導体量子井戸レ―
ザの第２の実施例の構成である。このような構成を有す
る本発明による半導体量子井戸レ―ザによれば、上述し
た事項を除いて、図２２〜図２７で前述した従来の半導
体量子井戸レ―ザの場合と同様の構成を有するので、詳
細説明は省略するが、電極層８及び９を通じて、内部に
電流を流せば、図２２〜図２７で前述した従来の半導体
量子井戸レ―ザの場合と同様に、レ―ザ発振にもとずく
レーザ光を良好な特性を有して得ることができる。The above describes the semiconductor quantum well layer according to the present invention.
This is the configuration of the second embodiment of the invention. The semiconductor quantum well laser according to the present invention having such a configuration has the same configuration as the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27, except for the matters mentioned above. Therefore, detailed explanation will be omitted, but if a current is caused to flow inside through the electrode layers 8 and 9, laser oscillation will occur as in the case of the conventional semiconductor quantum well laser described above with reference to FIGS. 22 to 27. The original laser beam can be obtained with good characteristics.
【００４３】しかしながら、図７〜図１２に示す本発明
による半導体量子井戸レ―ザの場合、光ガイド兼量子閉
込め層としての半導体層３の半導体領域３Ｂが、半導体
領域３Ａに比し高いポテンシャルエネルギを有するとと
もに、光ガイド兼量子閉込め層としての半導体層５の半
導体領域５Ｂが、半導体領域５Ａに比し高いポテンシャ
ルエネルギを有するので、図１〜図６で上述した本発明
による半導体量子井戸レ―ザの場合と同様に、内部に流
れる電流のほとんどが、活性層としての半導体層４に流
れる。However, in the case of the semiconductor quantum well laser according to the present invention shown in FIGS. 7 to 12, the semiconductor region 3B of the semiconductor layer 3 serving as a light guide and quantum confinement layer has a higher potential than the semiconductor region 3A. The semiconductor quantum well according to the present invention described above with reference to FIGS. As in the case of a laser, most of the current flowing inside flows through the semiconductor layer 4 as an active layer.
【００４４】このため、図７〜図１２に示す本発明によ
る半導体量子井戸レ―ザの場合も、レーザ光を、図１〜
図６で上述した本発明による半導体量子井戸レ―ザの場
合と同様に、図２２〜図２７で前述した従来の半導体量
子井戸レ―ザの場合に比し効率良く得ることができる。Therefore, in the case of the semiconductor quantum well laser according to the present invention shown in FIGS. 7 to 12, the laser beam is
As in the case of the semiconductor quantum well laser according to the present invention described above with reference to FIG. 6, it is possible to obtain a higher efficiency than in the case of the conventional semiconductor quantum well laser described with reference to FIGS. 22 to 27.
【００４５】[0045]
【実施例３】次に、図１３〜図１８を伴って、本発明に
よる半導体量子井戸レ―ザの第３の実施例を述べよう。[Embodiment 3] Next, a third embodiment of the semiconductor quantum well laser according to the present invention will be described with reference to FIGS. 13 to 18.
【００４６】図１３〜図１８において、図７〜図１２と
の対応部分には同一符号を付し詳細説明を省略する。In FIGS. 13 to 18, parts corresponding to those in FIGS. 7 to 12 are designated by the same reference numerals, and detailed description thereof will be omitted.
【００４７】図１３〜図１８に示す本発明による半導体
量子井戸レ―ザは、光ガイド兼量子閉込め層としての半
導体層５の半導体領域５Ｂ′が、半導体領域５Ｂ及び半
導体層３の半導体領域３Ｂに比し高いポテンシャルエネ
ルギを有することを除いて、図７〜図１２で上述した本
発明による半導体量子井戸レ―ザの場合と同様の構成を
有する。In the semiconductor quantum well laser according to the present invention shown in FIGS. 13 to 18, the semiconductor region 5B' of the semiconductor layer 5 serving as a light guide and quantum confinement layer is the same as the semiconductor region 5B and the semiconductor region of the semiconductor layer 3. It has the same configuration as the semiconductor quantum well laser according to the present invention described above with reference to FIGS. 7 to 12, except that it has a higher potential energy than 3B.
【００４８】このような本発明による半導体量子井戸レ
―ザによれば、上述した事項を除いて図７〜図１２で上
述した本発明による半導体量子井戸レ―ザの場合と同様
の構成を有するので、詳細説明は省略するが、図７〜図
１２で上述した本発明による半導体量子井戸レ―ザの場
合と同様の優れた作用効果が、図７〜図１２で上述した
本発明による半導体量子井戸レ―ザの場合に比しより確
実に得られる。The semiconductor quantum well laser according to the present invention has the same structure as the semiconductor quantum well laser according to the present invention described above with reference to FIGS. 7 to 12, except for the above-mentioned matters. Therefore, although a detailed explanation will be omitted, the semiconductor quantum well laser according to the present invention as described above in FIGS. This can be achieved more reliably than in the case of a well laser.
【００４９】[0049]
【実施例４、５、６】次に、図１９、図２０及び図２１
を伴って本発明による半導体量子井戸レ―ザの第４、第
５及び第６の実施例を述べよう。図１９、図２０及び図
２１において、図１、図７、図１３との対応部分には同
一符号を付して詳細説明を省略する。[Examples 4, 5, 6] Next, FIGS. 19, 20 and 21
The fourth, fifth and sixth embodiments of the semiconductor quantum well laser according to the present invention will now be described. In FIGS. 19, 20, and 21, parts corresponding to those in FIGS. 1, 7, and 13 are designated by the same reference numerals, and detailed description thereof will be omitted.
【００５０】図１９、図２０及び図２１に示す本発明に
よる半導体量子井戸レ―ザは、図１、図７及び図１３に
示す、光ガイド兼量子閉込め層としての半導体層５とク
ラッド層としての半導体層６間に、活性層としての半導
体層４と光ガイド兼量子閉込め層としての半導体層５と
の組が複数積層して介挿されていることを除いて、図１
、図７及び図１３に示す本発明による半導体量子井戸レ
―ザの場合と同様の構成を有する。The semiconductor quantum well laser according to the present invention shown in FIGS. 19, 20 and 21 has the semiconductor layer 5 as a light guide and quantum confinement layer and the cladding layer shown in FIGS. 1, 7 and 13. 1 except that a plurality of stacked sets of a semiconductor layer 4 as an active layer and a semiconductor layer 5 as a light guide/quantum confinement layer are interposed between semiconductor layers 6 as shown in FIG.
, has the same structure as the semiconductor quantum well laser according to the present invention shown in FIGS. 7 and 13.
【００５１】上述した本発明による半導体量子井戸レ―
ザの第４、第５及び第６の実施例の構成によれば、活性
層としての半導体層４と光ガイド兼量子閉込め層として
の半導体層５との組が積層されている構成を有するので
、活性層としての半導体層４と光ガイド兼量子閉込め層
としての半導体層５との組が１つである図１、図７及び
図１３で上述した本発明による半導体量子井戸レ―ザの
場合に比し良好な特性を有して、図１、図７及び図１３
で上述した本発明による半導体量子井戸レ―ザの場合と
同様の作用効果が得られる。The semiconductor quantum well layer according to the present invention described above
According to the configurations of the fourth, fifth, and sixth embodiments of the present invention, a set of a semiconductor layer 4 as an active layer and a semiconductor layer 5 as a light guide and quantum confinement layer is laminated. Therefore, in the semiconductor quantum well laser according to the present invention as described above with reference to FIGS. 1, 7, and 13, there is one set of the semiconductor layer 4 as an active layer and the semiconductor layer 5 as a light guide and quantum confinement layer. 1, 7 and 13.
The same effects as in the case of the semiconductor quantum well laser according to the present invention described above can be obtained.
【図１】本発明による半導体量子井戸レ―ザの第１の実
施例を示す略線的断面図である。FIG. 1 is a schematic cross-sectional view showing a first embodiment of a semiconductor quantum well laser according to the present invention.
【図２】図１に示す本発明による半導体量子井戸レ―ザ
のａ−ａ線上でみた各部のポテンシャルエネルギを示す
図である。FIG. 2 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 1, as seen on the aa line.
【図３】図１に示す本発明による半導体量子井戸レ―ザ
のｂ−ｂ線上でみた各部のポテンシャルエネルギを示す
図である。FIG. 3 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 1, as seen on the b-b line.
【図４】図１に示す本発明による半導体量子井戸レ―ザ
のｃ−ｃ線上でみた各部のポテンシャルエネルギを示す
図である。FIG. 4 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 1, as viewed along the c-c line.
【図５】図１に示す本発明による半導体量子井戸レ―ザ
のｄ−ｄ線上でみた各部のポテンシャルエネルギを示す
図である。FIG. 5 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 1 as viewed on the dd line.
【図６】図１に示す本発明による半導体量子井戸レ―ザ
のｅ−ｅ線上でみた各部のポテンシャルエネルギを示す
図である。FIG. 6 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 1, as seen on the ee line.
【図７】本発明による半導体量子井戸レ―ザの第２の実
施例を示す略線的断面図である。FIG. 7 is a schematic cross-sectional view showing a second embodiment of a semiconductor quantum well laser according to the present invention.
【図８】図７に示す本発明による半導体量子井戸レ―ザ
のａ−ａ線上でみた各部のポテンシャルエネルギを示す
図である。8 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 7, as seen on the aa line.
【図９】図７に示す本発明による半導体量子井戸レ―ザ
のｂ−ｂ線上でみた各部のポテンシャルエネルギを示す
図である。9 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 7, as seen on the b-b line.
【図１０】図７に示す本発明による半導体量子井戸レ―
ザのｃ−ｃ線上でみた各部のポテンシャルエネルギを示
す図である。FIG. 10 shows a semiconductor quantum well layer according to the present invention shown in FIG.
FIG. 3 is a diagram showing the potential energy of each part as seen on the c-c line of the image.
【図１１】図７に示す本発明による半導体量子井戸レ―
ザのｄ−ｄ線上でみた各部のポテンシャルエネルギを示
す図である。FIG. 11 is a semiconductor quantum well layer according to the present invention shown in FIG.
FIG. 3 is a diagram showing the potential energy of each part as seen on the dd line of the image plane.
【図１２】図７に示す本発明による半導体量子井戸レ―
ザのｅ−ｅ線上でみた各部のポテンシャルエネルギを示
す図である。FIG. 12 shows a semiconductor quantum well layer according to the present invention shown in FIG.
FIG. 3 is a diagram showing the potential energy of each part as seen on the line ee of the image.
【図１３】本発明による半導体量子井戸レ―ザの第３の
実施例を示す略線的断面図である。FIG. 13 is a schematic cross-sectional view showing a third embodiment of a semiconductor quantum well laser according to the present invention.
【図１４】図１３に示す本発明による半導体量子井戸レ
―ザのａ−ａ線上でみた各部のポテンシャルエネルギを
示す図である。FIG. 14 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 13 as seen on the aa line.
【図１５】図１３に示す本発明による半導体量子井戸レ
―ザのｂ−ｂ線上でみた各部のポテンシャルエネルギを
示す図である。FIG. 15 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 13 as seen on the bb line.
【図１６】図１３に示す本発明による半導体量子井戸レ
―ザのｃ−ｃ線上でみた各部のポテンシャルエネルギを
示す図である。FIG. 16 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 13, as viewed along the c-c line.
【図１７】図１３に示す本発明による半導体量子井戸レ
―ザのｄ−ｄ線上でみた各部のポテンシャルエネルギを
示す図である。17 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 13 as viewed on the dd line.
【図１８】図１３に示す本発明による半導体量子井戸レ
―ザのｅ−ｅ線上でみた各部のポテンシャルエネルギを
示す図である。18 is a diagram showing the potential energy of each part of the semiconductor quantum well laser according to the present invention shown in FIG. 13, as seen on the ee line.
【図１９】本発明による半導体量子井戸レ―ザの第４の
実施例を示す略線的断面図である。FIG. 19 is a schematic cross-sectional view showing a fourth embodiment of a semiconductor quantum well laser according to the present invention.
【図２０】本発明による半導体量子井戸レ―ザの第５の
実施例を示す略線的断面図である。FIG. 20 is a schematic cross-sectional view showing a fifth embodiment of a semiconductor quantum well laser according to the present invention.
【図２１】本発明による半導体量子井戸レ―ザの第６の
実施例を示す略線的断面図である。FIG. 21 is a schematic cross-sectional view showing a sixth embodiment of a semiconductor quantum well laser according to the present invention.
【図２２】従来の半導体量子井戸レ―ザを示す略線的断
面図である。FIG. 22 is a schematic cross-sectional view showing a conventional semiconductor quantum well laser.
【図２３】図２２に示す従来の半導体量子井戸レ―ザの
ａ−ａ線上でみた各部のポテンシャルエネルギを示す図
である。23 is a diagram showing the potential energy of each part of the conventional semiconductor quantum well laser shown in FIG. 22 as seen on the aa line.
【図２４】図２２に示す従来の半導体量子井戸レ―ザの
ｂ−ｂ線上でみた各部のポテンシャルエネルギを示す図
である。FIG. 24 is a diagram showing the potential energy of each part of the conventional semiconductor quantum well laser shown in FIG. 22 as viewed on the b-b line.
【図２５】図２２に示す従来の半導体量子井戸レ―ザの
ｃ−ｃ線上でみた各部のポテンシャルエネルギを示す図
である。FIG. 25 is a diagram showing the potential energy of each part of the conventional semiconductor quantum well laser shown in FIG. 22 as viewed along the c-c line.
【図２６】図２２に示す従来の半導体量子井戸レ―ザの
ｄ−ｄ線上でみた各部のポテンシャルエネルギを示す図
である。26 is a diagram showing the potential energy of each part of the conventional semiconductor quantum well laser shown in FIG. 22 as viewed on the dd line.
【図２７】図２２に示す従来の半導体量子井戸レ―ザの
ｅ−ｅ線上でみた各部のポテンシャルエネルギを示す図
である。27 is a diagram showing the potential energy of each part of the conventional semiconductor quantum well laser shown in FIG. 22 as seen on the ee line.
１ 半導体基板２
クラッド層としての半導体層３
光ガイド兼量子閉込め層と
しての半導体層
４ 活性層としての半導体
層５ 光ガイド兼量子閉込
め層としての半導体層
６ クラッド層としての半
導体層７ キャップ層とし
ての半導体層８、９ 電極層1 Semiconductor substrate 2
Semiconductor layer 3 as cladding layer
Semiconductor layer 4 as light guide and quantum confinement layer Semiconductor layer 5 as active layer Semiconductor layer 6 as light guide and quantum confinement layer Semiconductor layer 7 as cladding layer Semiconductor layer 8, 9 as cap layer Electrode layer
Claims (3)
の半導体層と、上記第１の半導体層上に形成されている
活性層としての量子細線構造または量子箱構造を有する
第２の半導体層と、上記第１の半導体層上に上記第２の
半導体層を覆って埋置するように形成されている光ガイ
ド兼量子閉込め層としての第３の半導体層とを有する半
導体量子井戸レ―ザにおいて、上記第３の半導体層が、
上記第２の半導体層の側面上の第１の半導体領域と、そ
の第１の半導体領域以外の第２の半導体領域とでなり、
上記第３の半導体層の第１の半導体領域が、上記第１の
半導体層、及び上記第３の半導体層の第２の半導体領域
に比し高いポテンシャルエネルギを有することを特徴と
する半導体量子井戸レ―ザ。[Claim 1] A first layer serving as a light guide and quantum confinement layer.
a second semiconductor layer having a quantum wire structure or a quantum box structure as an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the first semiconductor layer. In a semiconductor quantum well laser having a third semiconductor layer as a light guide and quantum confinement layer formed to cover and bury the third semiconductor layer, the third semiconductor layer
A first semiconductor region on the side surface of the second semiconductor layer and a second semiconductor region other than the first semiconductor region,
A semiconductor quantum well characterized in that the first semiconductor region of the third semiconductor layer has a higher potential energy than the first semiconductor layer and the second semiconductor region of the third semiconductor layer. Laser.
の半導体層と、上記第１の半導体層上に形成されている
活性層としての量子細線構造または量子箱構造を有する
第２の半導体層と、上記第１の半導体層上に上記第２の
半導体層を覆って埋置するように形成されている光ガイ
ド兼量子閉込め層としての第３の半導体層とを有する半
導体量子井戸レ―ザにおいて、上記第３の半導体層が、
上記第２の半導体層の側面上の第１の半導体領域と、上
記第２の半導体層上の第２の半導体領域と、上記第１の
半導体領域上の第３の半導体領域とでなり、上記第１の
半導体層が、上記第２の半導体層下の第４の半導体領域
と上記第３の半導体層の第１の半導体領域下の第５の半
導体領域とでなり、上記第１の半導体層の第５の半導体
領域が、上記第１の半導体層の第４の半導体領域に比し
高いポテンシャルエネルギを有し、上記第３の半導体層
の第３の半導体領域が、上記第３の半導体層の第２の半
導体領域に比し高いポテンシャルエネルギを有すること
を特徴とする半導体量子井戸レ―ザ。[Claim 2] The first layer serves as a light guide and quantum confinement layer.
a second semiconductor layer having a quantum wire structure or a quantum box structure as an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the first semiconductor layer. In a semiconductor quantum well laser having a third semiconductor layer as a light guide and quantum confinement layer formed to cover and bury the third semiconductor layer, the third semiconductor layer
a first semiconductor region on a side surface of the second semiconductor layer, a second semiconductor region on the second semiconductor layer, and a third semiconductor region on the first semiconductor region; The first semiconductor layer includes a fourth semiconductor region under the second semiconductor layer and a fifth semiconductor region under the first semiconductor region of the third semiconductor layer, and the first semiconductor layer The fifth semiconductor region of the third semiconductor layer has a higher potential energy than the fourth semiconductor region of the first semiconductor layer, and the third semiconductor region of the third semiconductor layer has a higher potential energy than the fourth semiconductor region of the first semiconductor layer. A semiconductor quantum well laser having a higher potential energy than a second semiconductor region of the semiconductor quantum well laser.
の半導体層と、上記第１の半導体層上に形成されている
活性層としての量子細線構造または量子箱構造を有する
第２の半導体層と、上記第１の半導体層上に上記第２の
半導体層を覆って埋置するように形成されている光ガイ
ド兼量子閉込め層としての第３の半導体層とを有する半
導体量子井戸レ―ザにおいて、上記第３の半導体層が、
上記第２の半導体層の側面上の第１の半導体領域と、上
記第２の半導体層上の第２の半導体領域と、上記第１の
半導体領域上の第３の半導体領域とでなり、上記第１の
半導体層が、上記第２の半導体層下の第４の半導体領域
と上記第３の半導体層の第１の半導体領域下の第５の半
導体領域とを有し、上記第１の半導体層の第５の半導体
領域が、上記第１の半導体層の第４の半導体領域に比し
高いポテンシャルエネルギを有し、上記第３の半導体層
の第３の半導体領域が、上記第３の半導体層の第２の半
導体領域に比し高いポテンシャルエネルギを有し、上記
第３の半導体層の第１の半導体領域が、上記第１の半導
体層の第５の半導体領域、及び上記第３の半導体層の第
３の半導体領域に比し高いポテンシャルエネルギを有す
ることを特徴とする半導体量子井戸レ―ザ。[Claim 3] The first layer serves as a light guide and quantum confinement layer.
a second semiconductor layer having a quantum wire structure or a quantum box structure as an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the first semiconductor layer. In a semiconductor quantum well laser having a third semiconductor layer as a light guide and quantum confinement layer formed to cover and bury the third semiconductor layer, the third semiconductor layer
a first semiconductor region on a side surface of the second semiconductor layer, a second semiconductor region on the second semiconductor layer, and a third semiconductor region on the first semiconductor region; the first semiconductor layer has a fourth semiconductor region under the second semiconductor layer and a fifth semiconductor region under the first semiconductor region of the third semiconductor layer; A fifth semiconductor region of the layer has a higher potential energy than a fourth semiconductor region of the first semiconductor layer, and a third semiconductor region of the third semiconductor layer has a higher potential energy than a fourth semiconductor region of the first semiconductor layer. The first semiconductor region of the third semiconductor layer has a higher potential energy than the second semiconductor region of the layer, and the first semiconductor region of the third semiconductor layer has a higher potential energy than the second semiconductor region of the layer. A semiconductor quantum well laser characterized by having a higher potential energy than a third semiconductor region of the layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5336791A JPH04269887A (en) | 1991-02-25 | 1991-02-25 | Semiconductor quantum well laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5336791A JPH04269887A (en) | 1991-02-25 | 1991-02-25 | Semiconductor quantum well laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04269887A true JPH04269887A (en) | 1992-09-25 |
Family
ID=12940848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5336791A Pending JPH04269887A (en) | 1991-02-25 | 1991-02-25 | Semiconductor quantum well laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04269887A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002184970A (en) * | 2000-12-15 | 2002-06-28 | Fujitsu Ltd | Semiconductor device including quantum dots, its fabricating method and semiconductor laser |
-
1991
- 1991-02-25 JP JP5336791A patent/JPH04269887A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002184970A (en) * | 2000-12-15 | 2002-06-28 | Fujitsu Ltd | Semiconductor device including quantum dots, its fabricating method and semiconductor laser |
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