JPH04268816A - Photoelectric switch for object detection - Google Patents
Photoelectric switch for object detectionInfo
- Publication number
- JPH04268816A JPH04268816A JP2897191A JP2897191A JPH04268816A JP H04268816 A JPH04268816 A JP H04268816A JP 2897191 A JP2897191 A JP 2897191A JP 2897191 A JP2897191 A JP 2897191A JP H04268816 A JPH04268816 A JP H04268816A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric switch
- thermistor
- temperature coefficient
- light
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、光応用センサとしてよ
く知れられている物体検出用光電スイッチに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric switch for object detection, which is well known as an optical sensor.
【0002】0002
【従来の技術】被検出物体の検知,位置決め手段として
光電スイッチを用いることが周知である。図2はかかる
物体検出用光電スイッチの構成を示すものであり、図に
おいて、1は投光器、2は受光器で、投光器1と受光器
2は被検出物体3の移動通路を隔てて対向配備されてい
る。ここで、投光器1は、投光源としての発光素子4,
発光素子4の駆動回路5,投光レンズ6などから構成さ
れている。また、受光器2は、受光レンズ7,受光素子
8,増幅器9,コンパレータ10などで構成されている
。かかる構成で、投光器1から受光器2に向けて光ビー
ム11を出射した状態で被検出物体3が光路を横切ると
、光ビーム11が被検出物体3で遮光されるために受光
器2の受光量が変化して物体の検出信号が出力される。
なお、昨今の光電スイッチでは、前記の発光素子4に小
形で発光効率のよい半導体レーザ素子が、また受光素子
8には半導体フォトダイオードが一般に用いられている
。2. Description of the Related Art It is well known to use a photoelectric switch as means for detecting and positioning an object to be detected. FIG. 2 shows the configuration of such a photoelectric switch for detecting an object. In the figure, 1 is a light emitter and 2 is a light receiver, and the light emitter 1 and the light receiver 2 are arranged opposite to each other across the moving path of the detected object 3. ing. Here, the light projector 1 includes a light emitting element 4 as a light projecting source,
It is comprised of a drive circuit 5 for the light emitting element 4, a light projecting lens 6, and the like. Further, the light receiver 2 includes a light receiving lens 7, a light receiving element 8, an amplifier 9, a comparator 10, and the like. In such a configuration, when the detected object 3 crosses the optical path while the light beam 11 is emitted from the projector 1 toward the light receiver 2, the light beam 11 is blocked by the detected object 3, so that the light beam 11 is not received by the light receiver 2. The amount changes and an object detection signal is output. In recent photoelectric switches, a small semiconductor laser element with high luminous efficiency is generally used as the light emitting element 4, and a semiconductor photodiode is generally used as the light receiving element 8.
【0003】0003
【発明が解決しようとする課題】ところで、前記光電ス
イッチを用いて物体検出を行っている状態で周囲温度が
変化すると、投光器から出射する光ビームの光量が変化
したり、受光器の出力感度が変化したりするため、物体
検出時に誤動作を引き起こしたり、位置決め精度,検出
位置繰り返し精度が低下するという問題点がある。そこ
で、従来では測定精度の低下防止策として、光電スイッ
チを構成しているレンズ,ケースなどに周囲温度の変化
による影響が少ない特殊な材質で作られたものを採用す
る、また投光器の駆動回路に光量調節回路を組み込んで
出射光量を周囲温度の変化にかかわらず一定に保持する
などの対策を講じている。[Problems to be Solved by the Invention] By the way, if the ambient temperature changes while object detection is being performed using the photoelectric switch, the amount of light beam emitted from the projector may change, or the output sensitivity of the receiver may change. This causes problems such as causing malfunctions during object detection and decreasing positioning accuracy and detection position repeatability. Therefore, in the past, as a measure to prevent a decline in measurement accuracy, the lens and case that make up the photoelectric switch were made of special materials that were less affected by changes in ambient temperature, and the drive circuit of the floodlight was We have taken measures such as incorporating a light intensity adjustment circuit to maintain the output light intensity constant regardless of changes in ambient temperature.
【0004】しかしながら、上記のようにレンズ,ケー
スなどに特殊な材質を用いた光電スイッチは製作コスト
が高くなるほか、検出精度の改善にも限度があり、特に
周囲温度の変化による受光器の増幅器にも増幅感度の変
化があるために検出誤差の発生が免れない。However, as mentioned above, photoelectric switches that use special materials for the lens, case, etc. not only have high production costs, but also have limits on the improvement of detection accuracy, especially when the receiver amplifier is affected by changes in ambient temperature. Since there are also changes in amplification sensitivity, detection errors are inevitable.
【0005】本発明は上記の点にかんがみなされたもの
であり、受光器の増幅器回路に簡単な温度補償手段を追
加設置することにより、周囲温度が変化する環境で使用
する場合でも高い検出精度が得られるようにした物体検
出用光電スイッチを提供することを目的とする。The present invention has been made in consideration of the above points, and by adding a simple temperature compensation means to the amplifier circuit of the photoreceiver, high detection accuracy can be achieved even when used in an environment where the ambient temperature changes. An object of the present invention is to provide a photoelectric switch for detecting an object.
【0006】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明の光電スイッチにおいては、受光器における
受光回路の増幅器に温度補償用のサーミスタを接続し、
かつ該サーミスタの温度係数を光電スイッチの光学系,
回路系固有の温度係数を打ち消す値に選定するものと
する。[Means for Solving the Problems] In order to solve the above problems, in the photoelectric switch of the present invention, a thermistor for temperature compensation is connected to the amplifier of the light receiving circuit in the light receiver,
And the temperature coefficient of the thermistor is determined by the optical system of the photoelectric switch,
The value shall be selected to cancel out the temperature coefficient specific to the circuit system.
【0007】ここで、前記構成におけるサーミスタは増
幅器の帰還抵抗と直列に接続し、かつサーミスタの温度
係数をA,増幅器の帰還抵抗値をRf ,周囲温度の変
化量をtとして、サーミスタの抵抗値Rthは、Rth
=(1+At)Rf となるように選定し、さらに光電
スイッチの光学系,回路系固有の温度係数をαとして、
サーミスタの温度係数Aは、A=−2αとなるように選
定する。Here, the thermistor in the above configuration is connected in series with the feedback resistance of the amplifier, and the resistance value of the thermistor is expressed as A, the feedback resistance value of the thermistor as A, the feedback resistance value of the amplifier as Rf, and the amount of change in ambient temperature as t. Rth is Rth
= (1+At)Rf, and furthermore, assuming the temperature coefficient specific to the optical system and circuit system of the photoelectric switch to be α,
The temperature coefficient A of the thermistor is selected so that A=-2α.
【0008】[0008]
【作用】上記の構成で、サーミスタの抵抗値,温度係数
を適正に選定して温度補償回路を構成することにより、
周囲温度に変化に伴って増減する受光器の出力が補正さ
れ、周囲温度の変化に関係なく高精度で物体検出が行え
、検出位置繰り返し精度も向上する。[Operation] With the above configuration, by appropriately selecting the resistance value and temperature coefficient of the thermistor and configuring the temperature compensation circuit,
The output of the light receiver, which increases or decreases with changes in ambient temperature, is corrected, allowing highly accurate object detection regardless of changes in ambient temperature, and improving detection position repeatability.
【0009】[0009]
【実施例】図1は受光器の増幅器に対する本発明実施例
の温度補償回路を示すものであり、増幅器9の帰還抵抗
12と直列に温度補償用のサーミスタ13が接続されて
いる。なお、14,15は増幅器のゲイン調整用抵抗で
あり、抵抗14,15の各抵抗値をR1 ,R2 で表
す。
ここで、サーミスタ13の抵抗値をRth、温度係数を
Aとして、Rth=(1+At)Rf となるようにサ
ーミスタ13の抵抗値が選定されており、さらにサーミ
スタの温度係数Aは、光電スイッチの光学系,回路系固
有の温度係数αを打ち消すような値に選定されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a temperature compensation circuit according to an embodiment of the present invention for an amplifier of a photodetector, in which a thermistor 13 for temperature compensation is connected in series with a feedback resistor 12 of an amplifier 9. Note that 14 and 15 are gain adjustment resistors of the amplifier, and the respective resistance values of the resistors 14 and 15 are represented by R1 and R2. Here, the resistance value of the thermistor 13 is selected so that Rth=(1+At)Rf, where the resistance value of the thermistor 13 is Rth and the temperature coefficient is A. Furthermore, the temperature coefficient A of the thermistor is The value is selected to cancel out the temperature coefficient α specific to the system and circuit system.
【0010】次に、サーミスタの温度係数Aをどのよう
にに決めるかを演算式で説明する。まず、図1に示した
回路での増幅器9の出力電圧V0 を式で表すと次式の
ようになる。すなわち、
V0 =−(Rf +Rth)(1+R1 /R2
)(1+αt)I =−(Rf +Rf
( 1+At)) (1+R1 /R2 )(1+αt
)I…(1)なお、tは周囲温度の変化量(変数)、I
は受光素子11の出力電流である。Next, how to determine the temperature coefficient A of the thermistor will be explained using an arithmetic expression. First, the output voltage V0 of the amplifier 9 in the circuit shown in FIG. 1 is expressed by the following equation. That is, V0 =-(Rf +Rth)(1+R1 /R2
)(1+αt)I =-(Rf +Rf
(1+At)) (1+R1 /R2)(1+αt
)I...(1) Note that t is the amount of change (variable) in the ambient temperature, I
is the output current of the light receiving element 11.
【0011】次に前記の(1)式を展開すると、次式の
ようになる。
V0 =−Rf ((1+αt)+( 1+At)
(1+αt)) (1+R1 /R2 ) I
=−Rf ( 2 +( A+2α)t+Aαt2
)(1+R1 /R2 ) I…(2)ここで、温度
係数α,Aは小さな値であり、(2)式における変数t
2 の項の係数はA×α≒0と見做せるので、(2)式
は次のように表される。
V0 =−Rf ( 2 +( A+2α)t)(
1+R1 /R2 ) I …(3
)Next, when the above equation (1) is expanded, the following equation is obtained. V0 =-Rf ((1+αt)+(1+At)
(1+αt)) (1+R1 /R2) I
=-Rf (2 + (A+2α)t+Aαt2
)(1+R1/R2) I...(2) Here, the temperature coefficient α, A is a small value, and the variable t in equation (2)
Since the coefficient of the term 2 can be regarded as A×α≈0, equation (2) can be expressed as follows. V0 = -Rf (2 + (A+2α)t) (
1+R1/R2) I...(3
)
【0012】ここで、出力電圧V0 が周囲温度の影
響を受けないようにするためには、上記(3)式におけ
る変数tの項の係数が0となるようにサーミスタ13の
温度係数Aの値を選べばよい。そこで、(3)式におけ
る変数tの項についてその係数を0とおくとA+2α=
0となり、この式を温度係数Aについて解けばA=−2
αとなる。ここで、前記(3)式にA=−2αを代入す
ると、
V0 =−2Rf ( 1+R1 /R2 ) I
…(4)となる。つまり、図1で増幅器9の帰還
抵抗Rf に直列接続したサーミスタ13の温度係数A
を前記の値に選べば、受光器の増幅器9の出力電圧V0
を表す式には周囲温度に関係した変数tの項がなくな
るので、光電スイッチは周囲温度の変化の影響を受ける
ことなく、被検出物体を高精度で検出することができる
。In order to prevent the output voltage V0 from being affected by the ambient temperature, the value of the temperature coefficient A of the thermistor 13 must be adjusted so that the coefficient of the variable t in equation (3) becomes 0. All you have to do is choose. Therefore, if we set the coefficient of the variable t term in equation (3) to 0, A+2α=
0, and if we solve this equation for the temperature coefficient A, we get A=-2
becomes α. Here, by substituting A=-2α into the above equation (3), V0 =-2Rf (1+R1 /R2) I
...(4). In other words, the temperature coefficient A of the thermistor 13 connected in series with the feedback resistor Rf of the amplifier 9 in FIG.
If is chosen to have the above value, the output voltage V0 of the amplifier 9 of the photoreceiver
Since the expression representing the term t, which is a variable related to the ambient temperature, is eliminated, the photoelectric switch can detect the object to be detected with high accuracy without being affected by changes in the ambient temperature.
【0013】[0013]
【発明の効果】本発明の物体検出用光電スイッチは、以
上説明したように構成されているので、周囲温度の影響
を受けることなく被検出物体を高精度で検出することが
でき、しかも検出位置繰り返し精度の向上も図れる。Effects of the Invention Since the photoelectric switch for object detection of the present invention is constructed as described above, it is possible to detect the object to be detected with high precision without being affected by the ambient temperature. It is also possible to improve repeatability.
【図1】本発明の実施例による受光器の温度補償回路図
FIG. 1 is a temperature compensation circuit diagram of a light receiver according to an embodiment of the present invention.
【図2】物体検出用光電スイッチの全体構成図[Figure 2] Overall configuration diagram of photoelectric switch for object detection
1 投光器 2 受光器 3 被検出物体 8 受光素子 9 増幅器 11 光ビーム 12 帰還抵抗 13 サーミスタ 1 Floodlight 2 Photo receiver 3 Object to be detected 8 Photo receiving element 9 Amplifier 11 Light beam 12 Feedback resistance 13 Thermistor
Claims (3)
た投光器と受光器との組合わせからなり、投光器から受
光器に向けて出射するビーム光が被検出物体で遮光され
た際の受光量変化から物体の通過を検出する物体検出用
光電スイッチにおいて、前記受光器における受光回路の
増幅器に温度補償用のサーミスタを接続し、かつ該サー
ミスタの温度係数を、光電スイッチの光学系, 回路系
固有の温度係数を打ち消すような値に選定したことを特
徴とする物体検出用光電スイッチ。Claim 1: Consisting of a combination of a light emitter and a light receiver arranged oppositely across a path of movement of the object to be detected, the light is received when a beam of light emitted from the light emitter toward the receiver is blocked by the object to be detected. In a photoelectric switch for object detection that detects passage of an object from a change in quantity, a thermistor for temperature compensation is connected to the amplifier of the light receiving circuit in the light receiver, and the temperature coefficient of the thermistor is determined by the optical system and circuit system of the photoelectric switch. A photoelectric switch for detecting an object, characterized in that the value is selected to cancel out the inherent temperature coefficient.
サーミスタを増幅器に付属する帰還抵抗と直列に接続し
、かつサーミスタの温度係数をA,増幅器の帰還抵抗値
をRf ,周囲温度の変化量をtとして、サーミスタの
抵抗値Rthを、Rth=(1+At)Rf となるよ
うに選定したことを特徴とする物体検出用光電スイッチ
。2. The photoelectric switch according to claim 1, comprising:
A thermistor is connected in series with a feedback resistor attached to an amplifier, and the temperature coefficient of the thermistor is A, the feedback resistance value of the amplifier is Rf, and the amount of change in ambient temperature is t. ) Rf.
光電スイッチの光学系,回路系固有の温度係数をαとし
て、サーミスタの温度係数Aを、A=−2αとなるよう
に選定したことを特徴とする物体検出用光電スイッチ。3. The photoelectric switch according to claim 1, comprising:
A photoelectric switch for detecting an object, characterized in that the temperature coefficient A of the thermistor is selected so that A=-2α, where α is the temperature coefficient specific to the optical system and circuit system of the photoelectric switch.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2897191A JPH04268816A (en) | 1991-02-25 | 1991-02-25 | Photoelectric switch for object detection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2897191A JPH04268816A (en) | 1991-02-25 | 1991-02-25 | Photoelectric switch for object detection |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04268816A true JPH04268816A (en) | 1992-09-24 |
Family
ID=12263308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2897191A Pending JPH04268816A (en) | 1991-02-25 | 1991-02-25 | Photoelectric switch for object detection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04268816A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7462813B2 (en) | 2006-05-30 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method with a light shielded second photodiode connected to a voltage regulator circuit |
US7791012B2 (en) | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
CN109828428A (en) * | 2019-03-05 | 2019-05-31 | 明基智能科技(上海)有限公司 | Projector and light circuit for detecting |
-
1991
- 1991-02-25 JP JP2897191A patent/JPH04268816A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7462813B2 (en) | 2006-05-30 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method with a light shielded second photodiode connected to a voltage regulator circuit |
US7671320B2 (en) | 2006-05-30 | 2010-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device comprising a first and second photodiode wherein a reference potential is supplied to the first photodiode |
US7791012B2 (en) | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
CN109828428A (en) * | 2019-03-05 | 2019-05-31 | 明基智能科技(上海)有限公司 | Projector and light circuit for detecting |
CN109828428B (en) * | 2019-03-05 | 2020-11-17 | 明基智能科技(上海)有限公司 | Projector and light detection circuit |
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