JPH0426538B2 - - Google Patents

Info

Publication number
JPH0426538B2
JPH0426538B2 JP59251918A JP25191884A JPH0426538B2 JP H0426538 B2 JPH0426538 B2 JP H0426538B2 JP 59251918 A JP59251918 A JP 59251918A JP 25191884 A JP25191884 A JP 25191884A JP H0426538 B2 JPH0426538 B2 JP H0426538B2
Authority
JP
Japan
Prior art keywords
reaction chamber
annular
chamber
dry etching
annular wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59251918A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61131450A (ja
Inventor
Hisao Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Canon Marketing Japan Inc
Original Assignee
Canon Inc
Canon Hanbai KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc, Canon Hanbai KK filed Critical Canon Inc
Priority to JP25191884A priority Critical patent/JPS61131450A/ja
Publication of JPS61131450A publication Critical patent/JPS61131450A/ja
Publication of JPH0426538B2 publication Critical patent/JPH0426538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP25191884A 1984-11-30 1984-11-30 ドライエツチング装置 Granted JPS61131450A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25191884A JPS61131450A (ja) 1984-11-30 1984-11-30 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25191884A JPS61131450A (ja) 1984-11-30 1984-11-30 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS61131450A JPS61131450A (ja) 1986-06-19
JPH0426538B2 true JPH0426538B2 (ko) 1992-05-07

Family

ID=17229899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25191884A Granted JPS61131450A (ja) 1984-11-30 1984-11-30 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS61131450A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513005Y2 (ko) * 1986-02-04 1993-04-06
JPH01194419A (ja) * 1988-01-29 1989-08-04 Tel Sagami Ltd プラズマ処理装置
DE3803355A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage
JPH02141494A (ja) * 1988-07-30 1990-05-30 Kobe Steel Ltd ダイヤモンド気相合成装置
US5234526A (en) * 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53131977A (en) * 1977-04-25 1978-11-17 Toshiba Corp Activated gas generator
JPS5957435A (ja) * 1982-09-27 1984-04-03 Fujitsu Ltd プラズマ処理方法および装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53131977A (en) * 1977-04-25 1978-11-17 Toshiba Corp Activated gas generator
JPS5957435A (ja) * 1982-09-27 1984-04-03 Fujitsu Ltd プラズマ処理方法および装置

Also Published As

Publication number Publication date
JPS61131450A (ja) 1986-06-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term