JPH042632A - Production of nonlinear optical material - Google Patents
Production of nonlinear optical materialInfo
- Publication number
- JPH042632A JPH042632A JP9970790A JP9970790A JPH042632A JP H042632 A JPH042632 A JP H042632A JP 9970790 A JP9970790 A JP 9970790A JP 9970790 A JP9970790 A JP 9970790A JP H042632 A JPH042632 A JP H042632A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- powder
- nonlinear optical
- optical material
- source powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 18
- 239000000463 material Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 78
- 239000000843 powder Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims description 18
- 229910052793 cadmium Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000011669 selenium Substances 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- -1 Al_2Te_3 Inorganic materials 0.000 claims 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 11
- 239000011369 resultant mixture Substances 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 239000010419 fine particle Substances 0.000 description 12
- 239000002994 raw material Substances 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910004613 CdTe Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910005228 Ga2S3 Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は非線形光学効果を利用した光デバイスの基礎を
なす半導体微粒子分散ガラス非線形光学材料の製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing a glass nonlinear optical material in which semiconductor fine particles are dispersed, which forms the basis of an optical device that utilizes nonlinear optical effects.
従来の技術
従来の技術としては例えば、ジャーナル・オブ・オプテ
ィカル・ソサエティ・オプ・アメリカ第７３巻第６４７
頁（Ｊ、Ｏｐｔ、Ｓｏｃ、Ａｍ、 Ｖｏｌ、７３ Ｐ
。Conventional technology Conventional technology includes, for example, Journal of Optical Society Op America, Vol. 73, No. 647.
Page (J, Opt, Soc, Am, Vol, 73 P
.
６４７ （１９８３））に記載されているＣｄＳ、 Ｓ
ｅ、、をホウケイ酸ガラスに分散したカットオフフィル
タガラスを非線形光学材料に用いるものがある。このカ
ットオフフィルタガラスは、Ｃｄ５Ｘ５ｅｌ−ｘとホウ
ケイ酸ガラス材料を白金ルツボに入れ、１６００℃程度
の高温で溶融して作製している。647 (1983)), CdS, S
There is a type of nonlinear optical material that uses a cutoff filter glass in which e.g., is dispersed in borosilicate glass. This cut-off filter glass is produced by placing Cd5X5el-x and borosilicate glass material in a platinum crucible and melting them at a high temperature of about 1600°C.
また、ジャーナル・オブ・アプライド・フィジックス第
６３巻第９５７頁（Ｊ、Ａｐｐｌ、Ｐｈｙｓ、 Ｖｏ
ｌ。Also, Journal of Applied Physics, Vol. 63, p. 957 (J, Appl, Phys, Vo
l.
６３ Ｐ、９５７ （１９８８））に開示されている
ようなＣｄＳ微粒子分散薄膜ガラスがある。この薄膜ガ
ラスは、ターゲットにコーニング社製７０５９ガラス上
に粉末のＣｄＳを配置したものを用い、高周波マグネト
ロンスパッタリング法により、前記７０５９ガラス中に
ＣｄＳを２〜４重量％分散させたものである。63 P, 957 (1988)), there is a CdS fine particle dispersed thin film glass. This thin film glass is obtained by dispersing 2 to 4% by weight of CdS in the 7059 glass using a high frequency magnetron sputtering method using a target in which powdered CdS is placed on 7059 glass manufactured by Corning.
発明が解決しようとする課題
従来の半導体微粒子分散ガラスの製造方法においては、
次のような２つの課題があった。Problems to be Solved by the Invention In the conventional manufacturing method of semiconductor fine particle dispersed glass,
There were two issues as follows.
■ カットオフフィルタガラスの場合：溶融法ではスパ
ッタリング法に較べて冷却速度が遅いため、Ｃｄ５ＸＳ
ｅ＋−ｘをホウケイ酸ガラスに１重量％以上均一に分散
させることが困難である。■ In the case of cut-off filter glass: Since the cooling rate is slower in the melting method than in the sputtering method, Cd5XS
It is difficult to uniformly disperse more than 1% by weight of e+-x in borosilicate glass.
また１６００″Ｃ以上の高温で溶融しなければ作製でき
ないため、半導体成分の揮発損失は大きく、その組成を
制御することは極めて難しく、またガラス組成自体の制
御も難しい。Furthermore, since it cannot be manufactured unless it is melted at a high temperature of 1600''C or higher, the volatilization loss of the semiconductor component is large, and it is extremely difficult to control its composition, and it is also difficult to control the glass composition itself.
■ スパッタリング法を用いた場合：従来のターゲット
のように、ガラスの上に半導体の粉末、ペレット、ある
いはチップを配置したものを用いると、半導体微粒子が
均一に分散したガラス薄膜を得ることは難しい。■ When using the sputtering method: When using a conventional target in which semiconductor powder, pellets, or chips are placed on glass, it is difficult to obtain a glass thin film with uniformly dispersed semiconductor particles.
本発明は、半導体微粒子を高密度で均質に分散させた非
線形光学材料の製造方法を提供することを目的とする。An object of the present invention is to provide a method for manufacturing a nonlinear optical material in which semiconductor fine particles are uniformly dispersed at high density.
課題を解決するための手段
上記課題を解決するために本発明は、カドミウム源粉末
と、硫黄源粉末、セレン源粉末、テルル源粉末の３者の
内の少なくとも１つと、低融点ガラス粉末とを混合、焼
結して複合ガラスを作製し、この複合ガラスをターゲッ
トとし、スパッタリング法を用いて、化学量論性にすぐ
れた半導体微粒子がガラス中に均一かつ多量に分散した
構造を有する薄膜状の半導体微粒子分散ガラスを製造す
ることを特徴とする。Means for Solving the Problems In order to solve the above problems, the present invention uses a cadmium source powder, at least one of the following three: a sulfur source powder, a selenium source powder, a tellurium source powder, and a low melting point glass powder. A composite glass is produced by mixing and sintering, and using this composite glass as a target, a thin film with a structure in which semiconductor fine particles with excellent stoichiometry are uniformly and abundantly dispersed in the glass is created using a sputtering method. The method is characterized in that it produces glass in which semiconductor fine particles are dispersed.
作用
本発明の非線形光学材料の製造方法では、溶融温度の低
いマトリックスガラスを用いるため、ターゲットを作製
する際の焼結温度を低くすることができ、半導体成分の
揮発損失を小さく抑えられる。また、ガラス中に半導体
微粒子としてＣｄＳ、 ＣｄＳｅあるいはＣｄＴｅを分
散させる場合、原材料としてＣｄＳ、 ＣｄＳｅあるい
はＣｄＴｅを用いるよりも、ＣｄＯなどのカドミウム源
粉末とＺｎＳ、Ｚｎ５ｅ、 ＺｎＴｅなどの硫黄源粉末
、セレン源粉末、テルル源粉末の３者の内の少なくとも
１つを用いるほうが揮発損失は抑えられる。これらの理
由により、ガラス中に分散した半導体微粒子の化学量論
性がすぐれており、その組成制御も容易となる。Function: Since the method for manufacturing a nonlinear optical material of the present invention uses a matrix glass with a low melting temperature, the sintering temperature when producing the target can be lowered, and the volatilization loss of the semiconductor component can be suppressed. Furthermore, when dispersing CdS, CdSe, or CdTe as semiconductor particles in glass, rather than using CdS, CdSe, or CdTe as raw materials, a cadmium source powder such as CdO, a sulfur source powder such as ZnS, Zn5e, or ZnTe, or a selenium source is used. Volatilization loss can be suppressed by using at least one of powder and tellurium source powder. For these reasons, the semiconductor fine particles dispersed in the glass have excellent stoichiometry, and their composition can be easily controlled.
また半導体成分がマトリックスガラス中に分散した均質
な複合ガラスをターゲットとして用いスパッタリングを
行うので、半導体微粒子が高濃度で均質に分散した薄膜
状の半導体微粒子分散ガラスを製造できる。Furthermore, since sputtering is performed using a homogeneous composite glass in which a semiconductor component is dispersed in a matrix glass as a target, a thin film-like semiconductor particle-dispersed glass in which semiconductor particles are uniformly dispersed at a high concentration can be produced.
実施例 以下本発明の実施例について説明する。Example Examples of the present invention will be described below.
実施例１
第１表Ａに示す組成を有する低融点ガラス原材料を白金
ルツボに入れ、９００°Ｃで溶融してガラスを作製した
。これを粉砕した後、このガラスに対して４０重量％の
ＣｄＳ含有量となるようＣｄＯ粉末とＺｎＳ粉末を混合
し、白金ルツボに入れ５５０″Ｃで焼結して複合ガラス
（直径１００ＩｌｌｌＩｌ、厚さ６ｍｍ）を作製した。Example 1 A low-melting glass raw material having the composition shown in Table 1 A was placed in a platinum crucible and melted at 900°C to produce glass. After pulverizing this, CdO powder and ZnS powder are mixed so that the CdS content is 40% by weight based on the glass, and the mixture is placed in a platinum crucible and sintered at 550"C to make a composite glass (diameter 100IllIIl, thickness 6 mm) was produced.
このガラス板をターゲットに使用して、高周波マグネト
ロンスパンタリング装置により、ガラスの薄膜化を行な
った。スパッタリングはアルゴンガス雰囲気下で行なっ
た。膜厚２００μｍの薄膜ガラスを石英ガラス基板（厚
さ０．３＋ｎｍ）上に形成した後、３００″Ｃの電気炉
中で３０分間加熱し、ＣｄＳの結晶を成長させた。薄膜
ガラス中のＣｄＳ分散量は３４重量％で、ＣｄとＳの化
学量論比は０．９７であり、粒径は１０〜５０人であっ
た。ＣｄＳ分散ガラスの光吸収スペクトルから得られた
バンドギャップはバルクのＣｄＳに比べ０．９ｅＶブル
ーシフトしていることから、ＣｄＳが量子ドツトになっ
ていることがわかった。Using this glass plate as a target, glass was made into a thin film using a high frequency magnetron sputtering device. Sputtering was performed under an argon gas atmosphere. A thin film glass with a thickness of 200 μm was formed on a quartz glass substrate (thickness 0.3+nm) and then heated in an electric furnace at 300″C for 30 minutes to grow CdS crystals.CdS dispersion in thin film glass The amount was 34% by weight, the stoichiometric ratio of Cd and S was 0.97, and the particle size was 10-50%.The band gap obtained from the optical absorption spectrum of CdS-dispersed glass was that of bulk CdS. It was found that CdS was a quantum dot because it was blue-shifted by 0.9 eV compared to .
なお上記のＣｄＳ原材料以外に、ＣｄＯとＡｌｚＳｓ、
ＣｄＯとＧａ２Ｓ３、ＣｄＯとＣａＳ、ＣｄＯとＳｒＳ
、ＣｄＯとｐｂｓあるいはＣｄＯとＺｒＳ、を用いても
、ＣｄＳ微粒子を１０〜４０重量％含有したガラス薄膜
を作製することができた。またマトリックスガラスに第
１表Ｂ−Ｄに示す組成を有するガラス原材料を用いても
、本実施例と同様なＣｄＳ分散ガラスを得ることができ
た。In addition to the above CdS raw materials, CdO and AlzSs,
CdO and Ga2S3, CdO and CaS, CdO and SrS
, CdO and pbs, or CdO and ZrS, it was possible to produce a glass thin film containing 10 to 40% by weight of CdS fine particles. Further, even when glass raw materials having the compositions shown in Table 1 B to D were used for the matrix glass, a CdS-dispersed glass similar to that of this example could be obtained.
第１表 （単位は重量％）
実施例２
第１表りに示す組成を有する低融点ガラス原材料を白金
ルツボに入れ、８００°Ｃで溶融してガラスを作製した
。これを粉砕した後、このガラスに対して４０重量％の
ＣｄＳｅ含有量となるようＣｄＯ粉末とＺｎ５ｅ粉末を
混合し、白金ルツボに入れ５００℃で焼結して複合ガラ
ス（直径１０抛ｍ、厚さ６ｍ＋ｌｌ）を作製した。また
同じマトリックスガラスに４０重量％のＣｄＴｅ含有量
となるようＣｄＯとＺｎＴｅを混合した複合ガラスも作
製した。これらのガラス板を夫々ターゲットに使用して
、高周波マグネトロンスパッタリング装置により、ガラ
スの薄膜化を行なった。スパッタリングはアルゴンガス
雰囲気下で行なった。膜厚２００μｍの薄膜ガラスを石
英ガラス基板（厚さ０．３ｍｍ）上に形成した後、３０
０℃の電気炉中で３０分間加熱し、ＣｄＳｅあるいはＣ
ｄＴｅの結晶を成長させた。ガラス中のＣｄＳｅ分散量
は３７重量％で、ＣｄとＳｅの化学量論比は０．９６で
あり、粒径は３０〜６０人であった。またＣｄＴｅ分散
量は３３重量％で、ＣｄとＴｅの化学量論比は０．９７
であり、粒径は２０〜６０人であった。上記２種の半導
体を分散させたガラスの吸収スペクトルから得られたバ
ンドギャップはそれぞれバルクの半導体に比べ０．８ｅ
Ｖ、０．９ｅＶブルーシフトしていることから、半導体
が量子ドツトになっていることがわかった。Table 1 (Unit: % by weight) Example 2 A low melting point glass raw material having the composition shown in Table 1 was placed in a platinum crucible and melted at 800°C to produce glass. After pulverizing this, CdO powder and Zn5e powder are mixed so that the CdSe content is 40% by weight based on the glass, and the mixture is placed in a platinum crucible and sintered at 500°C to make a composite glass (diameter 10 mm, thickness A total of 6m+ll) was prepared. A composite glass was also produced by mixing CdO and ZnTe in the same matrix glass so that the CdTe content was 40% by weight. Each of these glass plates was used as a target to form a glass thin film using a high frequency magnetron sputtering device. Sputtering was performed under an argon gas atmosphere. After forming a thin film glass with a film thickness of 200 μm on a quartz glass substrate (thickness 0.3 mm),
CdSe or C
A crystal of dTe was grown. The amount of CdSe dispersed in the glass was 37% by weight, the stoichiometric ratio of Cd and Se was 0.96, and the particle size was 30-60%. In addition, the CdTe dispersion amount is 33% by weight, and the stoichiometric ratio of Cd and Te is 0.97.
The particle size was 20 to 60. The band gap obtained from the absorption spectrum of the glass in which the above two types of semiconductors are dispersed is 0.8e compared to that of the bulk semiconductor.
Since the semiconductor was blue-shifted by 0.9 eV, it was found that the semiconductor was a quantum dot.
なお上記の半導体原材料以外に、ＣｄＯとＡｈＳｅ３、
ＣｄＯｌ！：Ｇａｚｓｅ３、ＣｄＯとＰｂＳｅ、 Ｃｄ
ＯとＡ１．Ｔｅ。In addition to the above semiconductor raw materials, CdO and AhSe3,
CdOl! : Gazse3, CdO and PbSe, Cd
O and A1. Te.
あるいはＣｄＯとＰｂＴｅを用いても、ＣｄＳｅ微粒子
あるいはＣｄＴｅ微粒子を１０〜４０重量％含有したガ
ラス薄膜を作製することができた。またマトリックスガ
ラスに第１表Ａ−Ｃに示す組成を有するガラス原材料を
用いても、本実施例と同様な半導体分散ガラスを得るこ
とができた。Alternatively, by using CdO and PbTe, a glass thin film containing 10 to 40% by weight of CdSe fine particles or CdTe fine particles could be produced. Further, even when glass raw materials having the compositions shown in Table 1 AC were used for the matrix glass, a semiconductor-dispersed glass similar to that of this example could be obtained.
実施例３
第１表Ｃに示す組成を有する低融点ガラス原材料を白金
ルツボに入れ、８００°Ｃで溶融してガラスを作製した
。これを粉砕した後、このガラスに対して４０重量％の
Ｃｄ５ｇ５ｅｌ−ｘ（χ＝０．９）含有量となるようＣ
ｄＯ粉末とＺｎＳ粉末とＺｎ５ｅ粉末を混合し、白金ル
ツボに入れ、５００°Ｃで焼結して複合ガラス（直径１
００ｍｍ、厚さ６ＩＩＩＩ１１）を作製した。このガラ
ス板をターゲットに使用して、高周波マグネトロンスパ
ッタリング装置により、ガラスの薄膜化を行なった。ス
パッタリングはアルゴンガス雰囲気下で行なった。膜厚
２００μｍの薄膜ガラスを石英ガラス基板（厚さ０．３
ｍｍ）上に形成した後、３００℃の電気炉中で３０分間
加熱し、ＣｄＳ、、 、Ｓｅ、、、の混晶を成長させた
。ガラス中の分散量は３５重量％で、ＣｄとＳとＳｅの
化学量論比は１ ：０．８８：０．０９であり、粒径は
２０〜５０人であった。Ｃｄ５ｏ、 ｑｓｅｏ、 ＋分
散ガラスの吸収スペクトルから得られたバンドギャップ
はバルクのＣｄ５ｏ、 ＊Ｓｅｏ、 ｌ に比べ０．９
ｅＶブルーシフトしていることから、Ｃｄ５ｏ、 ＊Ｓ
ｅｏ、 ｒが量子ドツトになっていることがわかった。Example 3 A low melting point glass raw material having the composition shown in Table 1 C was placed in a platinum crucible and melted at 800°C to produce glass. After pulverizing this, Cd5g5el-x (χ=0.9) content is 40% by weight based on this glass.
Mix dO powder, ZnS powder, and Zn5e powder, put it in a platinum crucible, and sinter it at 500°C to make composite glass (diameter 1
00 mm and thickness 6III11). This glass plate was used as a target to form a thin glass film using a high frequency magnetron sputtering device. Sputtering was performed under an argon gas atmosphere. A thin film glass with a film thickness of 200 μm was placed on a quartz glass substrate (thickness 0.3
mm) and then heated in an electric furnace at 300°C for 30 minutes to grow mixed crystals of CdS, , Se, . The amount of dispersion in the glass was 35% by weight, the stoichiometric ratio of Cd, S and Se was 1:0.88:0.09, and the particle size was 20-50%. The band gap obtained from the absorption spectrum of Cd5o, qseo, + dispersion glass is 0.9 compared to bulk Cd5o, *Seo, l
Because of the eV blue shift, Cd5o, *S
It turns out that eo and r are quantum dots.
なお、実施例１〜３では、半導体のカドミウム源にＣｄ
Ｏを用いたが、これ以外にＣｄ（ＯＨ）、、ＣｄＣＯ５
、ＣｄＣ２Ｏ４、あるいはＣｄ５１Ｏ：＋を用いても、
同様な半導体微粒子分散ガラス薄膜が得られた。また硫
黄源粉末、セレン源粉末、テルル源粉末の３者のうちの
上記とは異なる２者の組合せ、あるいは３者の組合せの
ものを用いることも可能である。In addition, in Examples 1 to 3, Cd was used as a cadmium source for the semiconductor.
O was used, but in addition to this, Cd(OH), CdCO5
, CdC2O4, or Cd51O:+,
A similar semiconductor fine particle dispersed glass thin film was obtained. Furthermore, it is also possible to use a combination of two or a combination of three of the three, sulfur source powder, selenium source powder, and tellurium source powder.
実施例４
実施例１に示した方法により作製したＣｄＳ分散ガラス
薄膜、あるいは実施例２に示した方法により作製したＣ
ｄＳｅ分散ガラス薄膜を用い、光双安定素子を作製した
。Example 4 A CdS-dispersed glass thin film produced by the method shown in Example 1 or a CdS-dispersed glass thin film produced by the method shown in Example 2.
An optical bistable device was fabricated using a dSe-dispersed glass thin film.
この素子の石英ガラス基板側から波長３８０ｎｍあるい
は５００ｎｍのレーザ光（ＮＺ光励起色素レザ光）をス
ポット径５μｍで入射した。Laser light (NZ light-excited dye laser light) with a wavelength of 380 nm or 500 nm was applied with a spot diameter of 5 μm from the quartz glass substrate side of this element.
次に入射光の強度と出射光の強度の関係を室温（２５°
Ｃ）にて測定したところ、それぞれ第１図あるいは第２
図に示したような双安定特性を示した。Next, we will calculate the relationship between the intensity of the incident light and the intensity of the emitted light at room temperature (25°
C), it was measured in Figure 1 or Figure 2, respectively.
It exhibited bistable characteristics as shown in the figure.
発明の効果
本発明によれば、ガラス組成、半導体組成の制御が容易
で、化学量論性にすぐれた半導体微粒子が低融点ガラス
マトリックスに高濃度に均一に分散した薄膜状の半導体
微粒子分散ガラスを製造できる。このガラス薄膜は大き
な非線形光学特性を有し、その応用として光双安定素子
等を作製することができる。Effects of the Invention According to the present invention, it is possible to easily control the glass composition and the semiconductor composition, and to provide a thin film-like semiconductor particle-dispersed glass in which semiconductor particles with excellent stoichiometry are uniformly dispersed in a high concentration in a low-melting glass matrix. Can be manufactured. This glass thin film has large nonlinear optical properties, and can be used to fabricate optical bistable devices and the like.
第１図及び第２図はそれぞれ本発明の半導体微粒子分散
ガラスを用いた双安定素子の光双安定特性を示す図であ
る。FIGS. 1 and 2 are diagrams showing the optical bistability characteristics of a bistable element using the semiconductor fine particle dispersed glass of the present invention, respectively.
Claims (5)
、テルル源粉末の３者の内の少なくとも１つと、低融点
ガラス粉末とを混合、焼結して複合ガラスを作製し、こ
の複合ガラスをターゲットとし、スパッタリング法を用
いて薄膜状の半導体微粒子分散ガラスを製造することを
特徴とする非線形光学材料の製造方法。(1) A composite glass is prepared by mixing and sintering a cadmium source powder, at least one of the three sulfur source powder, selenium source powder, and tellurium source powder, and a low melting point glass powder, and then producing the composite glass. 1. A method for producing a nonlinear optical material, the method comprising producing a thin film of semiconductor fine particle-dispersed glass using a sputtering method.
ｄＣＯ＿３、ＣｄＣ＿２Ｏ＿４あるいはＣｄＳｉＯ＿３
を用いることを特徴とする請求項１記載の非線形光学材
料の製造方法。(2) Cadmium sources include CdO, Cd(OH)_2, C
dCO_3, CdC_2O_4 or CdSiO_3
2. The method of manufacturing a nonlinear optical material according to claim 1, wherein:
＿３、ＣａＳ、ＳｒＳ、ＰｂＳあるいはＺｒＳ＿２を用
いることを特徴とする請求項１記載の非線形光学材料の
製造方法。(3) Sulfur sources include ZnS, Al_2S_3, Ga_2S
2. The method of manufacturing a nonlinear optical material according to claim 1, wherein _3, CaS, SrS, PbS, or ZrS_2 is used.
＿２Ｓｅ＿３あるいはＰｂＳｅを用いることを特徴とす
る請求項１記載の非線形光学材料の製造方法。(4) Selenium sources include ZnSe, Al_2Se_3, and Ga.
2. The method of manufacturing a nonlinear optical material according to claim 1, wherein _2Se_3 or PbSe is used.
はＰｂＴｅを用いることを特徴とする請求項１記載の非
線形光学材料の製造方法。(5) The method for manufacturing a nonlinear optical material according to claim 1, wherein ZnTe, Al_2Te_3, or PbTe is used as the tellurium source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9970790A JPH042632A (en) | 1990-04-16 | 1990-04-16 | Production of nonlinear optical material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9970790A JPH042632A (en) | 1990-04-16 | 1990-04-16 | Production of nonlinear optical material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH042632A true JPH042632A (en) | 1992-01-07 |
Family
ID=14254540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9970790A Pending JPH042632A (en) | 1990-04-16 | 1990-04-16 | Production of nonlinear optical material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH042632A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS504796A (en) * | 1973-05-17 | 1975-01-18 | ||
| US5955528A (en) * | 1996-07-04 | 1999-09-21 | Fuji Xerox Co., Ltd. | Polymeric composite material and process for manufacturing the same |
| JP2007015307A (en) * | 2005-07-08 | 2007-01-25 | Fuji Mach Mfg Co Ltd | Squeegee head, and scraping member |
-
1990
- 1990-04-16 JP JP9970790A patent/JPH042632A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS504796A (en) * | 1973-05-17 | 1975-01-18 | ||
| US5955528A (en) * | 1996-07-04 | 1999-09-21 | Fuji Xerox Co., Ltd. | Polymeric composite material and process for manufacturing the same |
| JP2007015307A (en) * | 2005-07-08 | 2007-01-25 | Fuji Mach Mfg Co Ltd | Squeegee head, and scraping member |
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