JPH0426137A - Semiconductor inspecting device - Google Patents
Semiconductor inspecting deviceInfo
- Publication number
- JPH0426137A JPH0426137A JP13154090A JP13154090A JPH0426137A JP H0426137 A JPH0426137 A JP H0426137A JP 13154090 A JP13154090 A JP 13154090A JP 13154090 A JP13154090 A JP 13154090A JP H0426137 A JPH0426137 A JP H0426137A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cooling
- vapor
- space
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000001816 cooling Methods 0.000 claims abstract description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 239000000110 cooling liquid Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000007689 inspection Methods 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 12
- 238000005192 partition Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000000523 sample Substances 0.000 abstract description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) この発明は半導体検査装置に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor inspection device.
(従来の技術及びその問題点)
CCD等の背面入射型赤外線センサを、InSb等の化
合物半導体材料から成る基板(ウェハ)上に集積回路(
IC)として作成する場合、このICを個々のチップに
グイシングする前に、ウェハ状態で検査する必要がある
。(Prior art and its problems) A back-illuminated infrared sensor such as a CCD is mounted on an integrated circuit (wafer) made of a compound semiconductor material such as InSb.
When fabricated as an integrated circuit (IC), the IC must be tested in wafer form before being diced into individual chips.
背面入射型赤外線センサは、ウェハの表面に集積回路及
び電極が配置され、その裏面から赤外光を入射して動作
させるものであるため、その検査装置としては、ウェハ
固定用のチャックをサファイアのように赤外光を透過す
る材料で形成し、このチャックの裏面から赤外光を照射
し得るようになっている。Back-illuminated infrared sensors have integrated circuits and electrodes arranged on the front surface of the wafer, and are operated by injecting infrared light from the back surface of the wafer. The chuck is made of a material that transmits infrared light, and can be irradiated with infrared light from the back side of the chuck.
そして上記検査装置においては、赤外光に対する検出感
度、つまりS/N比を向上するために、ICウェハ及び
その周辺を、液体窒素で冷却し得るようなされている。In the above inspection apparatus, the IC wafer and its surroundings can be cooled with liquid nitrogen in order to improve the detection sensitivity to infrared light, that is, the S/N ratio.
ところで上記ICウェハの冷却は、上記チャックを支持
する支持台等を液体窒素で冷却し、それからの熱伝導で
もってチャック、及びICウェハを冷却する方式が採用
されているため、従来の検査装置においては、冷却に要
する時間が長く、またチャック面での温度分布が不均一
になり易いという問題がある。By the way, the IC wafer is cooled by cooling the support stand supporting the chuck with liquid nitrogen, and cooling the chuck and IC wafer by heat conduction. However, there are problems in that it takes a long time to cool down and the temperature distribution on the chuck surface tends to be uneven.
そこでこの発明は、上記ウェハの冷却方式を改善し、そ
れにより冷却時間を短縮したり、チャ・ンク面での温度
分布の均一化を図ることが可能な半導体検査装置を提供
することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor inspection apparatus that can improve the wafer cooling method, thereby shortening the cooling time and making the temperature distribution uniform on the chunk surface.
(問題点を解決するための手段)
そこでこの発明の半導体検査装置は、背面入射型赤外線
センサを構成するための半導体ウニAを、サファイア等
の赤外線透過材料製のウェハ支持板に支持し、上記ウェ
ハ支持板の反ウェハ側から赤外線を照射すると共に、上
記半導体ウエノ\を液体窒素等の冷却用液体で冷却すべ
く構成して成る半導体検査装置において、上記ウェハ支
持板よりも反ウェハ側に赤外線透過材料製の窓板を配置
し、上記ウェハ支持板と窓板との間に冷却空間を形成し
、この冷却空間内に上記冷却用液体の蒸気を導入するこ
とを特徴としている。(Means for Solving the Problems) Therefore, in the semiconductor inspection apparatus of the present invention, a semiconductor urchin A for configuring a back-illuminated infrared sensor is supported on a wafer support plate made of an infrared transmitting material such as sapphire, and the above-mentioned In a semiconductor inspection device configured to emit infrared rays from the side opposite to the wafer of the wafer support plate and to cool the semiconductor wafer with a cooling liquid such as liquid nitrogen, infrared rays are emitted from the side opposite to the wafer from the wafer support plate. The present invention is characterized in that a window plate made of a transparent material is disposed, a cooling space is formed between the wafer support plate and the window plate, and the vapor of the cooling liquid is introduced into this cooling space.
(作用)
上記の結果、ウェハ支持板は、熱伝導による冷却に加え
て、さらに冷却用液体の蒸気でもって冷却され、これに
よりウェハが冷却されることになる。しかも冷却空間内
には蒸気しか存在しないため、冷却用液体が存在する場
合のような赤外光の吸収・散乱は生じず、そのため安定
した赤外光透過量が得られることになる。(Function) As a result of the above, in addition to being cooled by thermal conduction, the wafer support plate is further cooled by the vapor of the cooling liquid, thereby cooling the wafer. Moreover, since only vapor exists in the cooling space, absorption and scattering of infrared light does not occur as would occur when a cooling liquid is present, so that a stable amount of infrared light transmission can be obtained.
(実施例)
次にこの発明の半導体検査装置の具体的な実施例につい
て、図面を参照しつつ詳細に説明する。(Example) Next, a specific example of the semiconductor inspection apparatus of the present invention will be described in detail with reference to the drawings.
第1図において、1は架台を示しているが、この架台1
は、中央に貫通孔2を有する断熱構造のものである。架
台1上には、チャック台3が取着されている。チャック
台3は銅等の熱伝導の良好な材料で形成されたもので、
その中央部に貫通孔4を有する円板部5と、この円板部
5の外周から下方へと延びる環状部6とより成っている
。そして上記チャック、台3の貫通孔4を閉止するよう
に、その上面には円板状のウェハ支持板7が、またその
下面には円板状の窓板8がそれぞれ取着されており、そ
の内部に冷却空間9が形成されている。In FIG. 1, 1 indicates a pedestal, and this pedestal 1
has a heat insulating structure with a through hole 2 in the center. A chuck stand 3 is attached on the pedestal 1. The chuck base 3 is made of a material with good thermal conductivity such as copper.
It consists of a disc part 5 having a through hole 4 in its center, and an annular part 6 extending downward from the outer periphery of this disc part 5. A disk-shaped wafer support plate 7 is attached to the upper surface of the chuck and a disk-shaped window plate 8 to close the through-hole 4 of the chuck and table 3, and a disk-shaped window plate 8 is attached to the lower surface thereof. A cooling space 9 is formed inside thereof.
このウェハ支持板7と窓板8とは、共にサファイア等の
赤外光透過材料で形成されたものである。Both the wafer support plate 7 and the window plate 8 are made of an infrared light transmitting material such as sapphire.
なおこのウェハ支持板7は、吸着等の手段によって、そ
の上面にウェハWを固定し得るようなされている。Note that this wafer support plate 7 is configured such that the wafer W can be fixed on its upper surface by means such as suction.
一方10は、冷却用液体、例えば液体窒素Nを収容する
冷却容器であるが、この冷却容器10は、内筒12と外
筒13とを底面14でもって連設した形状のもので、内
外両筒12.13間に液体窒素Nを収容し得るようなさ
れている。冷却容器10は、通常は真空断熱容器とする
のが好ましい。On the other hand, reference numeral 10 denotes a cooling container for storing a cooling liquid, for example, liquid nitrogen N. This cooling container 10 has an inner cylinder 12 and an outer cylinder 13 connected to each other with a bottom surface 14, and has both an inner and outer cylinder. Liquid nitrogen N can be stored between the cylinders 12 and 13. The cooling container 10 is usually preferably a vacuum insulated container.
そして冷却容器10の内筒12の上端部が、上記チャッ
ク台3の下面に取着されている。The upper end of the inner cylinder 12 of the cooling container 10 is attached to the lower surface of the chuck stand 3.
上記チャック台3には、円板部5を径方向に貫通してそ
の内外を連通ずるガス導入路15と、端が円板部5の内
周壁に開口すると共に、他端が円板部5の上面に開口す
るガス導出路16とがそれぞれ穿設されている。上記ガ
ス導入路15とガス導出路16とは、第2図、第3図に
示すように、径方向等間隔にそれぞれ6個ずつ穿設され
ている。The chuck table 3 includes a gas introduction passage 15 that radially passes through the disc part 5 and communicates between the inside and outside of the disc part 5; A gas outlet passage 16 that opens on the upper surface of each is bored. As shown in FIGS. 2 and 3, six gas inlet passages 15 and six gas outlet passages 16 are provided at equal intervals in the radial direction.
これらガス導入路工5とガス導出路16との機能につい
ては後述する。また上記チャック台3の環状部6は、冷
却容器10内に液体窒素Nを収容した状態では、その下
端部が液体窒素N内に浸漬されるようなされている。さ
らに上記チャック台3には、上記環状部6の外周部を覆
う環状の隔壁17が取着されている。なお詳細には図示
していないが、上記架台1の下側からは、黒体炉等から
赤外光が照射されるようになっている。The functions of the gas introduction path 5 and the gas outlet path 16 will be described later. Further, the annular portion 6 of the chuck stand 3 is configured such that its lower end is immersed in the liquid nitrogen N when the liquid nitrogen N is contained in the cooling container 10. Furthermore, an annular partition wall 17 is attached to the chuck stand 3 to cover the outer circumference of the annular portion 6. Although not shown in detail, infrared light is irradiated from the bottom of the pedestal 1 from a blackbody furnace or the like.
上記検査装置の作動状態について説明する。まず上記冷
却容器10内の液体窒素Nによって、チャック台3の環
状部6が冷却され、熱伝導でもってチャック台3、ウェ
ハ支持板7、及びウェハWがそれぞれ冷却される。また
上記液体窒素Nは蒸発するが、チャック台3の外周部と
隔壁17との間に形成される蒸気供給空間18内におい
ては、蒸発窒素に起因してやや圧力上昇しく第4図参照
)、この圧力によって、上記チャック台3に設けたガス
導入路15から冷却空間9内へと窒素蒸気が導入され、
次いで冷却空間9からガス導出路16を経由して外部排
出されるという窒素蒸気の流れが形成される。そうする
と上記ウェハ支持板7は、その裏面から沸点に近い温度
の窒素蒸気によっても冷却されることになる。このよう
な状態において、架台lの下方がら上方に向けて赤外光
を照射し、ウェハWにプローブカード(図示せず)を接
触させて検査を行うのである。The operating state of the above inspection device will be explained. First, the annular portion 6 of the chuck table 3 is cooled by the liquid nitrogen N in the cooling container 10, and the chuck table 3, wafer support plate 7, and wafer W are each cooled by heat conduction. Furthermore, although the liquid nitrogen N evaporates, the pressure in the vapor supply space 18 formed between the outer circumference of the chuck table 3 and the partition wall 17 rises slightly due to the evaporated nitrogen (see Fig. 4). Due to the pressure, nitrogen vapor is introduced into the cooling space 9 from the gas introduction path 15 provided in the chuck table 3,
A flow of nitrogen vapor is then formed which is discharged from the cooling space 9 to the outside via the gas outlet path 16. In this case, the wafer support plate 7 is also cooled from the back surface by nitrogen vapor having a temperature close to the boiling point. In this state, infrared light is irradiated upward from the bottom of the pedestal L, and a probe card (not shown) is brought into contact with the wafer W to perform an inspection.
上記実施例では、蒸気供給空間18を形成するのに、隔
壁17を利用しているが、これは第5図に示すように、
チャック台3の構造を変更してチャック台3と隔壁17
とを一体構成することによっても形成可能である。In the above embodiment, the partition wall 17 is used to form the steam supply space 18, but as shown in FIG.
By changing the structure of the chuck base 3, the chuck base 3 and the partition wall 17 are
It can also be formed by integrally configuring the.
さらに上記では冷却容器10内において生ずる窒素蒸気
を冷却空間9内に導入しているが、蒸気供給源を別途設
けてもよい。Further, although in the above description the nitrogen vapor generated in the cooling container 10 is introduced into the cooling space 9, a separate vapor supply source may be provided.
(発明の効果)
上記構成の半導体検査装置によれば、ウェハ支持台は、
従来と略同様の熱伝導による冷却に加えて、さらに冷却
用液体の蒸気でもって冷却されることになる。したがっ
てウェハ冷却時間を従来よりも短縮でき、検査能率を向
上することが可能となる。特に初期冷却時には、発止蒸
気量が多くなるため、ウェハ支持板の蒸気による冷却は
一段と有効である。またウェハ支持板の温度分布につい
ても、従来の熱伝導だけによる冷却の場合よりも均一化
され、これにより検査精度を向上し得ることを確認して
いる。(Effects of the Invention) According to the semiconductor inspection device having the above configuration, the wafer support stand is
In addition to cooling by heat conduction, which is almost the same as in the conventional case, cooling is also performed by the vapor of the cooling liquid. Therefore, the wafer cooling time can be reduced compared to the conventional method, and inspection efficiency can be improved. Particularly during initial cooling, the amount of steam released is large, so cooling the wafer support plate with steam is even more effective. It has also been confirmed that the temperature distribution of the wafer support plate is made more uniform than in the case of conventional cooling using only heat conduction, and that this improves inspection accuracy.
さらに赤外光が透過する冷却空間内に、液体ではなく、
蒸気を導入する構成を採用することにより、赤外光の透
過光量が安定化するという利点が生じる。すなわち冷却
用液体を導入する場合には、光路中に位置する冷却空間
内で、液体そのものによる赤外光の吸収・散乱が発生す
るのに加えて、液体の沸とう気泡に起因する赤外光の吸
収・散乱が生じることになるが、冷却空間に気体蒸気を
導入する本願の場合には、上記赤外光の吸収・散乱を低
減し得るためである。Furthermore, in the cooling space through which infrared light passes, there is no liquid,
By adopting a configuration in which steam is introduced, there is an advantage that the amount of transmitted infrared light is stabilized. In other words, when a cooling liquid is introduced, in addition to absorption and scattering of infrared light by the liquid itself in the cooling space located in the optical path, infrared light caused by boiling bubbles of the liquid occurs. This is because absorption and scattering of the infrared light will occur, but in the case of the present application in which gaseous vapor is introduced into the cooling space, the absorption and scattering of the infrared light can be reduced.
第1図はこの発明の半導体検査装置の一実施例を模式的
に示す縦断面図、第2図は上記において用いるチャック
台の横断面図、第3図はその縦断面図、第4図は冷却空
間を経由する蒸気流を説明するための説明図、第5図は
チャック台の変更例の縦断面図である。
7・・・ウェハ支持板、8・・・窓板、9・冷却空間、
15・・・ガス導入路、1(5・・・ガス導出路、18
・・・蒸気供給空間、N・・・液体窒素、W・・・ウェ
ハ。FIG. 1 is a vertical cross-sectional view schematically showing an embodiment of the semiconductor inspection apparatus of the present invention, FIG. 2 is a cross-sectional view of the chuck stand used in the above, FIG. 3 is a vertical cross-sectional view thereof, and FIG. An explanatory diagram for explaining the steam flow passing through the cooling space, FIG. 5 is a longitudinal sectional view of a modified example of the chuck stand. 7... Wafer support plate, 8... Window plate, 9. Cooling space,
15... Gas introduction path, 1 (5... Gas outlet path, 18
...Vapour supply space, N...Liquid nitrogen, W...Wafer.
Claims (1)
ェハを、サファイア等の赤外線透過材料製のウェハ支持
板に支持し、上記ウェハ支持板の反ウェハ側から赤外線
を照射すると共に、上記半導体ウェハを液体窒素等の冷
却用液体で冷却すべく構成して成る半導体検査装置にお
いて、上記ウェハ支持板よりも反ウェハ側に赤外線透過
材料製の窓板を配置し、上記ウェハ支持板と窓板との間
に冷却空間を形成し、この冷却空間内に上記冷却用液体
の蒸気を導入することを特徴とする半導体検査装置。1. A semiconductor wafer for forming a back-illuminated infrared sensor is supported on a wafer support plate made of an infrared transmitting material such as sapphire, and infrared rays are irradiated from the side opposite the wafer of the wafer support plate, and the semiconductor wafer is In a semiconductor inspection device configured to be cooled with a cooling liquid such as liquid nitrogen, a window plate made of an infrared transmitting material is arranged on the side opposite to the wafer from the wafer support plate, and the window plate is connected to the wafer support plate. A semiconductor inspection device characterized in that a cooling space is formed in between, and the vapor of the cooling liquid is introduced into the cooling space.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13154090A JP2869439B2 (en) | 1990-05-21 | 1990-05-21 | Semiconductor inspection equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13154090A JP2869439B2 (en) | 1990-05-21 | 1990-05-21 | Semiconductor inspection equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0426137A true JPH0426137A (en) | 1992-01-29 |
JP2869439B2 JP2869439B2 (en) | 1999-03-10 |
Family
ID=15060468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13154090A Expired - Fee Related JP2869439B2 (en) | 1990-05-21 | 1990-05-21 | Semiconductor inspection equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2869439B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006184177A (en) * | 2004-12-28 | 2006-07-13 | Mitsubishi Electric Corp | Infrared inspection device and method |
-
1990
- 1990-05-21 JP JP13154090A patent/JP2869439B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006184177A (en) * | 2004-12-28 | 2006-07-13 | Mitsubishi Electric Corp | Infrared inspection device and method |
Also Published As
Publication number | Publication date |
---|---|
JP2869439B2 (en) | 1999-03-10 |
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