JPH04261059A - Method for trimming semiconductor element - Google Patents

Abstract

PURPOSE:To improve an accuracy, by considering the difference in a drift quantity for every product, with respect to a method for trimming a semiconductor device by processing the circuit pattern at a place to be adjusted, while monitoring the output voltage value at the place to be adjusted. CONSTITUTION:The drift rate of the output voltage value of a semiconductor device is measured under the operating state thereof (Step 11). The final drift quantity of the output voltage value is predicted based on the measured value thereof (Step 12). Based on optimum trimming conditions preset according to the predicted result thereof (Step 13), a trimming is performed (Step 14).

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for trimming a semiconductor element used, for example, when adjusting the characteristics of a hybrid IC by laser processing.

0002

2. Description of the Related Art A conventional trimming method of this type will be explained with reference to FIG. In the figure, reference numeral 1 indicates a thick film substrate of a hybrid IC, and reference numeral 2 indicates a thick film resistor for trimming formed thereon. When trimming, first the hybrid IC is put into operation, and while monitoring the voltage value at the adjustment point, the end of the thick film resistor 2 is slightly burned off with a laser. This increases the resistance value of the thick film resistor 2 and changes the output voltage value. The above operations are repeated, and trimming is completed when the output voltage value reaches a predetermined target value.

0003

[Problems to be Solved by the Invention] The above-mentioned output voltage value is not stabilized instantaneously, but is always accompanied by drift. Moreover, the amount of drift differs depending on the product. However, in the past, the amount of drift for each individual product was not taken into account, so the overall trimming accuracy was not very good. However, waiting until the drift subsides and stabilizes for each product would take too much time. An object of the present invention is to improve trimming accuracy without spending much extra time.

0004

[Means for Solving the Problems] The present invention measures the speed at which the output voltage value drifts with the element in the operating state during trimming, predicts the final amount of drift from the measured value, and calculates the amount of drift according to the result. Set optimal trimming conditions.

[0005]

[Operation] Differences in drift amount for each product are reflected in trimming. Moreover, since the total amount of drift is predicted from the measurement of the drift speed over a certain period of time, it only takes a short time.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a flowchart showing an embodiment of the present invention. The trimming process is performed as follows. First, the target product, the hybrid IC, is put into operation,
The amount by which the output voltage value at the adjustment point changes within a certain period of time is monitored, and the drift speed during that time is measured (step 11).

Next, the final drift amount is predicted from the drift speed (step 12). According to the predicted value of this drift amount, optimal trimming conditions such as the trimming method (for example, laser output) and target value are set (step 13), and based on that, the output voltage value reaches the target value as before. Trimming is performed (step 14).

[0008]

[Effects of the Invention] As described above, according to the present invention, the amount of drift that differs for each product is predicted based on the actual measured value of the drift speed, and the optimal trimming conditions are set according to the results, so that unnecessary This has the effect of improving trimming accuracy without spending a lot of time.

[Brief explanation of the drawing]

FIG. 1 is a flowchart showing a trimming procedure.

FIG. 2 is a configuration diagram showing an example of a trimming circuit of a hybrid IC.

[Explanation of symbols]

1 Thick film substrate 2 Thick film resistor for trimming

Claims (1)

[Claims] [Claim 1] In a method for trimming a semiconductor device, the device is brought into operation, the circuit pattern at the adjustment point is processed while monitoring the output voltage value at the adjustment point, and trimming is performed until the output voltage value reaches a target value. , put the element in operation state, measure the speed at which the output voltage value at the adjustment point drifts, predict the final amount of drift from the measured value, and perform trimming based on the optimal trimming conditions set according to the results. A method for trimming a semiconductor device, characterized in that: