JPH04261001A - Thylistor and fabrication thereof - Google Patents
Thylistor and fabrication thereofInfo
- Publication number
- JPH04261001A JPH04261001A JP2416537A JP41653790A JPH04261001A JP H04261001 A JPH04261001 A JP H04261001A JP 2416537 A JP2416537 A JP 2416537A JP 41653790 A JP41653790 A JP 41653790A JP H04261001 A JPH04261001 A JP H04261001A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- electrode
- electrodes
- sheet
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000007667 floating Methods 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims description 12
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 10
- 102220024172 rs397515479 Human genes 0.000 description 4
- 235000006748 manganese carbonate Nutrition 0.000 description 3
- 239000011656 manganese carbonate Substances 0.000 description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229940093474 manganese carbonate Drugs 0.000 description 2
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 2
- 239000011268 mixed slurry Substances 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- ZJRWDIJRKKXMNW-UHFFFAOYSA-N carbonic acid;cobalt Chemical compound [Co].OC(O)=O ZJRWDIJRKKXMNW-UHFFFAOYSA-N 0.000 description 1
- 229910021446 cobalt carbonate Inorganic materials 0.000 description 1
- ZOTKGJBKKKVBJZ-UHFFFAOYSA-L cobalt(2+);carbonate Chemical compound [Co+2].[O-]C([O-])=O ZOTKGJBKKKVBJZ-UHFFFAOYSA-L 0.000 description 1
- 229910000001 cobalt(II) carbonate Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、抵抗値調整用電極が形
成されたサーミスタとその製造方法に関する。本発明の
サーミスタは、プリント回路基板に実装して温度検知用
あるいは温度補償用として用いられるチップ型サーミス
タに利用する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermistor having resistance adjustment electrodes formed thereon and a method for manufacturing the same. The thermistor of the present invention is used as a chip-type thermistor that is mounted on a printed circuit board and used for temperature detection or temperature compensation.
【０００２】0002
【従来の技術】プリント回路基板に実装するチップ型サ
ーミスタは、直方体の形状であり、図３の断面図に示す
ように焼結したサーミスタ素体１の両端に端子電極４を
形成するものである。2. Description of the Related Art A chip-type thermistor mounted on a printed circuit board has a rectangular parallelepiped shape, and terminal electrodes 4 are formed at both ends of a sintered thermistor body 1, as shown in the cross-sectional view of FIG. .
【０００３】このような従来のサーミスタでは、抵抗値
の調整が難しい問題があり、この抵抗値の調整方法とし
て次のような構造が提案されている。[0003] Such conventional thermistors have a problem in that it is difficult to adjust the resistance value, and the following structure has been proposed as a method for adjusting the resistance value.
【０００４】一つは図４に示すような構造で、チップ型
直方体の両端面に設ける端子電極４を直方体サーミスタ
の両端面以外の表面に広く張り出すように付着させて抵
抗値を低くし、両端子電極の間を無機材料５で被覆する
方法である（実開昭６３−６１１０２ 号公報）。One is a structure as shown in FIG. 4, in which terminal electrodes 4 provided on both end surfaces of a chip-type rectangular parallelepiped are attached so as to extend widely over surfaces other than both end surfaces of the rectangular parallelepiped thermistor to lower the resistance value. This is a method of covering the space between both terminal electrodes with an inorganic material 5 (Japanese Utility Model Publication No. 63-61102).
【０００５】他の方法は図５に示すような構造で、積層
されたサーミスタ素体１の内部に内部電極２を交互にく
し状になるように積層し、この内部電極２をそれぞれの
端子電極４と並列に接続するものである（特公昭５０−
１１５８５号公報、特開平１−２５３２０３号公報）。Another method has a structure as shown in FIG. 5, in which internal electrodes 2 are alternately stacked in a comb-like manner inside a stacked thermistor element 1, and these internal electrodes 2 are connected to respective terminal electrodes. 4 is connected in parallel with
11585, JP-A-1-253203).
【０００６】[0006]
【発明が解決しようとする課題】しかし、端子電極を延
長して抵抗値を調整する方法では、精密に抵抗値を調整
することができない。すなわち、端子電極の形成は、電
極ペースト中にチップを浸漬する方法あるいはそれに類
似する方法によっているため、その形状、特にその端子
電極の長さを精密に調整することは難しく、抵抗値の調
整幅も限定される。また、工程が複雑となり、製造コス
トが高くなる。However, the method of adjusting the resistance value by extending the terminal electrode does not allow precise adjustment of the resistance value. In other words, since the terminal electrodes are formed by dipping the chip in electrode paste or a similar method, it is difficult to precisely adjust the shape, especially the length of the terminal electrodes, and the resistance value adjustment range is difficult. is also limited. Moreover, the process becomes complicated and the manufacturing cost increases.
【０００７】積層したサーミスタ素体内部のくし型内部
電極を端子電極に接続する構造のものでは、製造時に内
部電極ペーストとサーミスタ粉末との焼結性が違うため
、内部電極がうずもれて端子電極との接続が不安定にな
り、電気的接続不良の問題が生じる。このため抵抗値に
ばらつきが生ずる。また、この構造では、電流パスが内
部電極間でも生ずるため、その電流パスを考慮して設計
を行う必要がありサーミスタの設計が難しい。さらに、
電流パスに沿って形成される反応相が内部電極とサーミ
スタ素体の界面との間で形成され易く、その影響がでや
すい。[0007] In the structure in which the comb-shaped internal electrodes inside the laminated thermistor body are connected to the terminal electrodes, the sinterability of the internal electrode paste and thermistor powder differs during manufacturing, so the internal electrodes swell and form the terminals. The connection with the electrode becomes unstable, resulting in the problem of poor electrical connection. This causes variations in resistance values. Furthermore, in this structure, a current path also occurs between the internal electrodes, so it is necessary to take this current path into consideration when designing the thermistor, making it difficult to design the thermistor. moreover,
A reaction phase formed along the current path is likely to be formed between the internal electrode and the interface of the thermistor body, and this effect is likely to occur.
【０００８】本発明は、上述の問題を解決するもので、
精密にその抵抗値の調整を行って低抵抗値化を図ること
ができ、しかも端子電極との電気的接続不良に注意する
ことなく抵抗値の調整を行うことができ安定な特性を有
するサーミスタおよびその製造方法を提供することを目
的とする。[0008] The present invention solves the above-mentioned problems.
A thermistor and thermistor that can achieve a low resistance value by precisely adjusting its resistance value, and also have stable characteristics because the resistance value can be adjusted without worrying about poor electrical connection with the terminal electrode. The purpose is to provide a manufacturing method thereof.
【０００９】[0009]
【課題を解決するための手段】本発明は、サーミスタ素
体の両端に端子電極が形成され、このサーミスタ素体内
部に抵抗値調整用の内部電極が設けられたサーミスタに
おいて、上記内部電極は上記端子電極と電位の異なるフ
ローティング電極であることを特徴とする。[Means for Solving the Problems] The present invention provides a thermistor in which terminal electrodes are formed at both ends of a thermistor element body, and internal electrodes for adjusting a resistance value are provided inside the thermistor element body. It is characterized by being a floating electrode with a different potential from the terminal electrode.
【００１０】また本発明の方法は、サーミスタ用酸化物
粉末とバインダとを混合してシート状サーミスタ素材を
形成し、上記シート状サーミスタ素材の表面に導電性材
料を塗布または印刷し、この導電性材料を塗布または印
刷したシート状サーミスタ素材を導電性材料が表面に現
れないように積層しかつ上記導電性材料を塗布または印
刷した部分が端部に現れないようにチップ状に切断し、
切断されたチップ状のサーミスタ素材を焼成し、焼成さ
れたチップ型サーミスタ素体の両端に端子電極を形成す
ることを特徴とする。The method of the present invention also includes mixing an oxide powder for a thermistor with a binder to form a sheet-like thermistor material, coating or printing a conductive material on the surface of the sheet-like thermistor material, and applying the conductive material to the surface of the sheet-like thermistor material. Sheet-like thermistor materials coated or printed with materials are laminated so that the conductive material does not appear on the surface, and cut into chips so that the parts coated or printed with the conductive material do not appear at the ends,
The method is characterized in that the cut chip-shaped thermistor material is fired, and terminal electrodes are formed at both ends of the fired chip-shaped thermistor body.
【００１１】[0011]
【作用】本発明のように、端子電極とは電気的に接続さ
れない内部電極をチップ型サーミスタ素体の内部に設け
ることによりサーミスタの抵抗値を下げることができ、
抵抗値の調整を行うことができる。この内部電極は、サ
ーミスタ材料を混合してシート状にしたサーミスタ素材
の表面に内部電極材料を塗布または印刷して形成し、内
部電極が外へ現れないようにこのシート状サーミスタ素
材を積層し、この積層されたサーミスタ素材をチップ型
に切り出す。内部電極は端子電極と接続しないフローテ
ィング電極とするので、シート状サーミスタ素材をチッ
プ型に切り出すときには端部に現れないように切り出す
。切り出したチップ型サーミスタ素材を焼成し、端子電
極を形成してサーミスタを製造する。[Function] As in the present invention, the resistance value of the thermistor can be lowered by providing an internal electrode inside the chip-type thermistor body that is not electrically connected to the terminal electrode.
Resistance value can be adjusted. This internal electrode is formed by coating or printing an internal electrode material on the surface of a thermistor material that is made into a sheet by mixing thermistor materials, and the sheet-like thermistor material is laminated so that the internal electrode does not appear outside. This laminated thermistor material is cut into a chip shape. Since the internal electrodes are floating electrodes that are not connected to the terminal electrodes, when cutting out the sheet-like thermistor material into chip shapes, they are cut out so that they do not appear at the ends. The cut out chip-shaped thermistor material is fired to form terminal electrodes to manufacture the thermistor.
【００１２】この内部フローティング電極をもつチップ
型サーミスタは、内部フローティング電極による電流パ
スの集中が小さいので、その設計が容易になる。また、
フローティング電極であるため、内部電極周辺での反応
相の生成による特性への影響は小さい。[0012] This chip-type thermistor having an internal floating electrode has a small concentration of current paths due to the internal floating electrode, so its design is easy. Also,
Since it is a floating electrode, the generation of a reaction phase around the internal electrode has little effect on the characteristics.
【００１３】[0013]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【００１４】本発明のフローティング電極をサーミスタ
素体の内部に形成した例を図１、図２に示す。図１は、
抵抗値調整用の内部電極２を１つ形成しているサーミス
タの例であり、図２は抵抗値調整用の内部電極２を２つ
形成したサーミスタの例である。An example in which the floating electrode of the present invention is formed inside a thermistor body is shown in FIGS. 1 and 2. Figure 1 shows
This is an example of a thermistor in which one internal electrode 2 for resistance value adjustment is formed, and FIG. 2 is an example of a thermistor in which two internal electrodes 2 for resistance value adjustment are formed.
【００１５】図１に示すサーミスタは、平板状の直方体
を呈する形状であり、焼結されたサーミスタ素体１の内
部に端子電極４とは接続されない状態で、内部電極２が
１つ設けられている。図２のサーミスタでは、内部電極
２は２つ設けられている。The thermistor shown in FIG. 1 has a flat rectangular parallelepiped shape, and one internal electrode 2 is provided inside a sintered thermistor element 1 without being connected to a terminal electrode 4. There is. In the thermistor shown in FIG. 2, two internal electrodes 2 are provided.
【００１６】次に、具体的に作製したサーミスタの特性
を測定した例を示して説明する。Next, an example will be described in which the characteristics of a specifically manufactured thermistor were measured.
【００１７】（実施例１）市販の炭酸マンガン、酸化ニ
ッケルを原料として、そのモル比がＭｎＣＯ２ ： Ｎ
ｉＯ ＝８：２になるように配合し、バインダとして、
ポリビニルブチラール６重量％、エタノール３０重量％
、ブタノール３０重量％を加え、混合スラリーを作成し
た。このスラリーを用いてドクタブレード法により厚さ
０．８０ｍｍのシートを作成した。このシートを乾燥さ
せた後適当な大きさに切断して、パラジウムペーストを
このシートの両面にパターン印刷し、この導電性材料の
印刷されたシートの両面に内導電性材料の印刷されてな
いシートを積層した。そしてこの積層されたシート状の
サーミスタ素材を印刷パターンに則してチップ状に切断
した。この時印刷された導電性材料が端部に現れないよ
うに切断した。このチップ状のサーミスタ素材を１２０
０℃の温度で焼成し、この焼成されたチップ型サーミス
タ素体の両端部に銀パラジウム合金を塗布して端子電極
を形成した。(Example 1) Using commercially available manganese carbonate and nickel oxide as raw materials, the molar ratio was MnCO2:N.
Blended so that iO = 8:2, and as a binder,
Polyvinyl butyral 6% by weight, ethanol 30% by weight
, and 30% by weight of butanol were added to create a mixed slurry. A sheet with a thickness of 0.80 mm was prepared using this slurry by a doctor blade method. After drying this sheet, cut it into an appropriate size, print a pattern with palladium paste on both sides of this sheet, and insert a sheet without conductive material on both sides of the sheet printed with conductive material. were laminated. The laminated sheet-like thermistor material was then cut into chips according to the printed pattern. At this time, the printed conductive material was cut so as not to appear at the edges. This chip-shaped thermistor material is 120
It was fired at a temperature of 0°C, and a silver-palladium alloy was applied to both ends of the fired chip-type thermistor body to form terminal electrodes.
【００１８】このようにして得られたチップ型サーミス
タの外形寸法は、２．０ ×１．２５×０．８ｍｍであ
り、内部に形成されたフローティング電極は長さ１．６
ｍｍ×幅１．０ｍｍ であった。The external dimensions of the thus obtained chip type thermistor are 2.0 x 1.25 x 0.8 mm, and the floating electrode formed inside has a length of 1.6 mm.
It was mm x width 1.0 mm.
【００１９】得られたサーミスタ素子の電気特性は、素
子１００ 個について、
Ｒ２５＝１９ｋΩ±５％、
Ｂ定数 Ｂ＝３９２０Ｋ±０．５ ％であった。The electrical characteristics of the obtained thermistor element were as follows: R25=19kΩ±5%, B constant B=3920K±0.5% for 100 elements.
【００２０】ちなみに、同一の素材の内部電極のないチ
ップ型サーミスタの電気特性は、Ｒ２５＝３３ｋΩ±５
％、Ｂ定数Ｂ＝３９３０Ｋ±０．５ ％（ｎ＝１００
）であった。By the way, the electrical characteristics of a chip-type thermistor without internal electrodes made of the same material are R25=33kΩ±5
%, B constant B=3930K±0.5% (n=100
)Met.
【００２１】（実施例２）同様な方法で、炭酸マンガン
、酸化ニッケル、炭酸コバルトを出発原料とし、そのモ
ル比がＭｎＣＯ３ ： ＮｉＯ ：ＣｏＣＯ３ ＝３：
１：２となるように混合して実施例１と同じバインダに
より混合スラリーを作製してシートを作製した。このシ
ートに内部電極となる導電性材料としてプラチナ（Ｐｔ
） を用い、１２５０℃により焼成を行った。端子電極
として銀ペーストを用い、この銀による端子電極上にニ
ッケルおよび錫をメッキした。(Example 2) Using a similar method, manganese carbonate, nickel oxide, and cobalt carbonate were used as starting materials, and the molar ratio was MnCO3 : NiO : CoCO3 = 3:
A mixed slurry was prepared using the same binder as in Example 1 by mixing at a ratio of 1:2, and a sheet was prepared. This sheet contains platinum (Pt) as a conductive material that becomes the internal electrode.
), and firing was performed at 1250°C. Silver paste was used as the terminal electrode, and nickel and tin were plated on the silver terminal electrode.
【００２２】得られたサーミスタ素子の電気特性は、素
子１００ 個について、
Ｒ２５＝３．０ ｋΩ±５％、
Ｂ定数 Ｂ＝３４０５Ｋ±０．８ ％であった。The electrical characteristics of the obtained thermistor elements were as follows: R25=3.0 kΩ±5% and B constant B=3405K±0.8% for 100 elements.
【００２３】ちなみに、同一の素材の内部電極のないも
のでは、Ｒ２５＝５．８ ｋΩ±５％、Ｂ定数Ｂ＝３９
３０Ｋ±８％（ｎ＝１００ ）であった。By the way, for the same material without internal electrodes, R25=5.8 kΩ±5%, B constant B=39
It was 30K±8% (n=100).
【００２４】このように、サーミスタ素体内部にフロー
ティング電極を設けた実施例では、低抵抗値を図ること
ができ、またＢ定数のばらつきを少なくすることができ
た。As described above, in the embodiment in which the floating electrode was provided inside the thermistor body, it was possible to achieve a low resistance value and to reduce the variation in the B constant.
【００２５】これらのサーミスタ素子をテーピングし、
自動挿入機を用いてプリント基板に実装し、表面実装用
のチップ型サーミスタとして使用できることがわかった
。[0025] Tape these thermistor elements,
It was found that it can be mounted on a printed circuit board using an automatic insertion machine and used as a chip-type thermistor for surface mounting.
【００２６】[0026]
【発明の効果】このようにサーミスタ素体の内部に端子
電極と電位が異なるフローティング電極とすることによ
り、サーミスタ素子の抵抗値を所望の抵抗値に容易に調
整できる。またその特性を安定化してばらつきを少なく
することができ、所望の抵抗値を容易に得ることができ
、量産性に優れたサーミスタを実現できる。As described above, the resistance value of the thermistor element can be easily adjusted to a desired resistance value by providing a floating electrode having a different potential from the terminal electrode inside the thermistor element body. Furthermore, the characteristics can be stabilized and variations can be reduced, a desired resistance value can be easily obtained, and a thermistor that can be mass-produced can be realized.
【図１】 本発明のサーミスタ例の断面図。FIG. 1 is a cross-sectional view of an example thermistor of the present invention.
【図２】 本発明のサーミスタ例の断面図。FIG. 2 is a cross-sectional view of an example thermistor of the present invention.
【図３】 従来のサーミスタの断面図。FIG. 3 is a cross-sectional view of a conventional thermistor.
【図４】 従来のサーミスタの断面図。FIG. 4 is a cross-sectional view of a conventional thermistor.
【図５】 従来のサーミスタの断面図。FIG. 5 is a cross-sectional view of a conventional thermistor.
１ サーミスタ素体 ２ 内部電極 ４ 端子電極 ５ 無機材料 1 Thermistor element 2 Internal electrode 4 Terminal electrode 5 Inorganic materials
Claims (2)
成され、このサーミスタ素体内部に抵抗値調整用の内部
電極が設けられたサーミスタにおいて、上記内部電極は
上記端子電極と電位の異なるフローティング電極である
ことを特徴とするサーミスタ。1. In a thermistor in which terminal electrodes are formed at both ends of a thermistor element body, and internal electrodes for adjusting a resistance value are provided inside the thermistor element body, the internal electrodes are floating electrodes having a different potential from the terminal electrodes. A thermistor characterized by:
を混合してシート状サーミスタ素材を形成し、上記シー
ト状サーミスタ素材の表面に導電性材料を塗布または印
刷し、この導電性材料を塗布または印刷したシート状サ
ーミスタ素材を導電性材料が表面に現れないように積層
しかつ上記導電性材料を塗布または印刷した部分が端部
に現れないようにチップ状に切断し、切断されたチップ
状のサーミスタ素材を焼成し、焼成されたチップ型サー
ミスタ素体の両端に端子電極を形成するサーミスタの製
造方法。2. Mixing an oxide powder for thermistor and a binder to form a sheet-like thermistor material, applying or printing a conductive material on the surface of the sheet-like thermistor material, and applying or printing the conductive material. Thermistor sheets are laminated so that the conductive material does not appear on the surface, and are cut into chips so that the parts coated or printed with the conductive material do not appear at the ends. A thermistor manufacturing method that involves firing a material and forming terminal electrodes on both ends of the fired chip-type thermistor body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2416537A JPH04261001A (en) | 1990-12-28 | 1990-12-28 | Thylistor and fabrication thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2416537A JPH04261001A (en) | 1990-12-28 | 1990-12-28 | Thylistor and fabrication thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04261001A true JPH04261001A (en) | 1992-09-17 |
Family
ID=18524758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2416537A Pending JPH04261001A (en) | 1990-12-28 | 1990-12-28 | Thylistor and fabrication thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04261001A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06231906A (en) * | 1993-01-28 | 1994-08-19 | Mitsubishi Materials Corp | Thermistor |
| US6606783B1 (en) | 1997-08-07 | 2003-08-19 | Murata Manufacturing Co., Ltd. | Method of producing chip thermistors |
-
1990
- 1990-12-28 JP JP2416537A patent/JPH04261001A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06231906A (en) * | 1993-01-28 | 1994-08-19 | Mitsubishi Materials Corp | Thermistor |
| US6606783B1 (en) | 1997-08-07 | 2003-08-19 | Murata Manufacturing Co., Ltd. | Method of producing chip thermistors |
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