JPH0425841A - Mask device - Google Patents
Mask deviceInfo
- Publication number
- JPH0425841A JPH0425841A JP2130667A JP13066790A JPH0425841A JP H0425841 A JPH0425841 A JP H0425841A JP 2130667 A JP2130667 A JP 2130667A JP 13066790 A JP13066790 A JP 13066790A JP H0425841 A JPH0425841 A JP H0425841A
- Authority
- JP
- Japan
- Prior art keywords
- mask device
- auxiliary
- phase
- opening
- transmitted light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002834 transmittance Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体製造のりソゲラフイエ程で用いるマスク
装置のう板 開口部を透過する光の位相を互いに反転さ
せて、マスクパタンの転写像のコントラストを向上させ
る所謂位相シフトマスク装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a plate of a mask device used in a semiconductor manufacturing process. The contrast of the transferred image of a mask pattern is improved by mutually inverting the phases of the lights transmitted through the openings. The present invention relates to a so-called phase shift mask device.
従来の技術
従来のマスク装置としては 例えば 第３６回応用物理
学会関係連合講演会講演予稿集ｐ５５８． ｌａ−に２
に示されている。第２図はこの従来のマスク装置の構成
図を示すものであり、主開口部２１は半導体集積回路を
形成する回路バタン、補助開口部２２は透過光の位相か
主開口部２１からの透過光の位相に対して１８０°異な
る様１ミ 透明薄膜で開口部か覆われている開口部であ
る。以上のように構成された従来のマスク装置において
（よ 補助開口部２２の位置、大きさを調整し 主開口
部２１の周辺部での不必要な回折成分を、補助開口部２
２からの透過光との位相差によって相殺して結像面での
光強度を低下させ、解像度を向上させる効果を得る。Conventional technology Conventional mask devices include, for example, the proceedings of the 36th Japan Society of Applied Physics Association Conference, p558. la-ni 2
is shown. FIG. 2 shows a configuration diagram of this conventional mask device, in which the main opening 21 is a circuit baton that forms a semiconductor integrated circuit, and the auxiliary opening 22 is used to detect the phase of transmitted light or the transmitted light from the main opening 21. The opening is covered with a transparent thin film so that the phase differs by 180 degrees. In the conventional mask device configured as described above, the position and size of the auxiliary aperture 22 are adjusted to remove unnecessary diffraction components from the periphery of the main aperture 21.
The phase difference with the transmitted light from 2 cancels each other out, lowering the light intensity on the imaging plane and improving the resolution.
発明が解決しようとする課題
しかしながら前記のような構成では 補助開口部２２の
透過率が高い場合には 補助開口部２２の位置２寸法の
調整だけでは効果か得られない場合があるという問題点
を有してい九 本発明はかかる点に鑑へ 簡便かつ有効
なマスク装置を提供することを目的とする。Problems to be Solved by the Invention However, with the above configuration, if the transmittance of the auxiliary opening 22 is high, there is a problem that the effect may not be obtained only by adjusting the position and dimensions of the auxiliary opening 22. In view of this, it is an object of the present invention to provide a simple and effective mask device.
課題を解決するための手段
本発明は 主開口部と、前記主開口部に対する透過光の
位相及び透過率が異なる補助開口部を備えたことを特徴
とするマスク装置である。また本発明（よ 補助開口部
を透過した透過光の位相力丈主開ロ部を透過した透過光
の位相に比べて１８０°異なると同時（ミ 補助開口部
の光透過率が主開口部よりも小さいことを特徴とするマ
スク装置である。Means for Solving the Problems The present invention is a mask device comprising a main opening and an auxiliary opening in which the phase and transmittance of transmitted light with respect to the main opening are different. In addition, according to the present invention, the phase of the transmitted light transmitted through the auxiliary opening is 180° different from the phase of the transmitted light transmitted through the main aperture. This mask device is characterized by its small size.
作用
本発明は前記した構成により、補助開口部の透過率を低
下させているので、主開口部周辺の光強度を効果的に低
減する。Function The present invention reduces the transmittance of the auxiliary opening with the above-described configuration, thereby effectively reducing the light intensity around the main opening.
実施例
第１図（よ 本発明の一実施例におけるマスク装置の構
成図を示すものである。第１図において、２１は回路パ
タンを転写する主開口部３１は主開口部２１による回折
光を低減する本発明による補助開口部である。以上のよ
うに構成されたこの実施例のマスク装置において、以下
その動作を説明する。Embodiment FIG. 1 shows a configuration diagram of a mask device in an embodiment of the present invention. In FIG. This is the auxiliary opening according to the present invention that reduces the number of auxiliary openings.The operation of the mask device of this embodiment configured as described above will be explained below.
マスク装置に光が照射されたとき、主開口部２１の透過
光と補助開口部３１の透過光が干渉しあうことによって
、結像面上での主開口部２１周辺の光強度が減少法 主
開口部２１の転写像のコントラストが向上するものであ
る。この場合、補助開口部３１の光透過率を主開口部２
１の５０％とすることにより、主開口部２１パタンの像
面光強度のコントラストを更に改善できも 第３図は本
発明のマスク装置による像面強度のシミュレーション結
果を示すものである。第３図（ａ ） Ｉｔ 従来の
マスク装置による０、６μ口の正方形パタンの開口部の
投影像へ 第２図のｃ−ｄ切辺における像面光強度のシ
ミュレーション結果を示す。第３図（ｂ）ｌ友 本発
明によるマスク装置による０、６μｍの正方形パタンの
開口部の投影像へ 第１図のａ−ｂ切辺に於ける像面強
度のシミュレーション結果を示す。本発明によるマスク
装置によって、マスクパタンの開口部の転写像の光強度
のコントラストを著しく改善できる。When the mask device is irradiated with light, the light transmitted through the main aperture 21 and the light transmitted through the auxiliary aperture 31 interfere with each other, so that the light intensity around the main aperture 21 on the imaging plane decreases. The contrast of the transferred image of the opening 21 is improved. In this case, the light transmittance of the auxiliary opening 31 is the same as that of the main opening 2.
By setting it to 50% of 1, the contrast of the image plane light intensity of the main opening 21 pattern can be further improved. FIG. 3(a) It shows the simulation results of the image plane light intensity at the c-d intercept in FIG. 2 to the projection image of the opening of the 0.6 μm square pattern by the conventional mask device. FIG. 3(b) shows a projection image of an aperture in a square pattern of 0.6 .mu.m by the mask device according to the present invention. The simulation results of the image plane intensity at the a-b cutting edge of FIG. 1 are shown. With the mask device according to the present invention, the contrast of the light intensity of the transferred image of the opening of the mask pattern can be significantly improved.
発明の詳細
な説明したように 本発明によれば マスクバタンの転
写像の解像性を簡便な方法によって著しく改善すること
ができ、その実用的効果は太きい。DETAILED DESCRIPTION OF THE INVENTION According to the present invention, the resolution of a transferred image of a mask button can be significantly improved by a simple method, and its practical effects are significant.
第１図は本発明の実施例におけるマスク装置の構成＆
第２図は従来のマスク装置の構成＠ 第３図はマスクバ
タンの転写像の像面強度のシミュレーション結果を示す
図である。
２１・・・・主開口部２２・・・・補助関口訊３１・・
・・補助開口部
代理人の氏名 弁理士 粟野重孝 はか１名第
図
２／ｌ、関口叶
３／補補助口部
？２［ＪＫｌ”１０１ｐ
Ω
因Figure 1 shows the configuration of a mask device in an embodiment of the present invention.
FIG. 2 is a diagram showing the configuration of a conventional mask device @ FIG. 3 is a diagram showing a simulation result of the image plane intensity of a transferred image of a mask button. 21...Main opening 22...Auxiliary Sekiguchi 31...
... Name of auxiliary opening agent Patent attorney Shigetaka Awano Haka 1 figure 2/l, Kano Sekiguchi 3/ auxiliary auxiliary opening? 2 [JKl”101p Ω factor
Claims (2)
及び透過率が異なる補助開口部とを備えたマスク装置。(1) A mask device including a main opening and an auxiliary opening having a different phase and transmittance of transmitted light with respect to the main opening.
８０゜異なるとともに、光透過率が小さいことを特徴と
する特許請求の範囲第１項記載のマスク装置。(2) The phase of the transmitted light through the auxiliary aperture is 1 compared to the main aperture.
2. The mask device according to claim 1, wherein the mask device has a difference of 80° and a small light transmittance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2130667A JPH0425841A (en) | 1990-05-21 | 1990-05-21 | Mask device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2130667A JPH0425841A (en) | 1990-05-21 | 1990-05-21 | Mask device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0425841A true JPH0425841A (en) | 1992-01-29 |
Family
ID=15039734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2130667A Pending JPH0425841A (en) | 1990-05-21 | 1990-05-21 | Mask device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0425841A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07287387A (en) * | 1994-02-03 | 1995-10-31 | Hyundai Electron Ind Co Ltd | Half-tone type phase shift mask and its manufacture |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02140743A (en) * | 1988-11-22 | 1990-05-30 | Hitachi Ltd | Mask and its production |
| JPH03209474A (en) * | 1990-01-12 | 1991-09-12 | Sony Corp | Phase shift mask |
-
1990
- 1990-05-21 JP JP2130667A patent/JPH0425841A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02140743A (en) * | 1988-11-22 | 1990-05-30 | Hitachi Ltd | Mask and its production |
| JPH03209474A (en) * | 1990-01-12 | 1991-09-12 | Sony Corp | Phase shift mask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07287387A (en) * | 1994-02-03 | 1995-10-31 | Hyundai Electron Ind Co Ltd | Half-tone type phase shift mask and its manufacture |
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