JPH0425085A - Solid-state laser device - Google Patents

Solid-state laser device

Info

Publication number
JPH0425085A
JPH0425085A JP12769490A JP12769490A JPH0425085A JP H0425085 A JPH0425085 A JP H0425085A JP 12769490 A JP12769490 A JP 12769490A JP 12769490 A JP12769490 A JP 12769490A JP H0425085 A JPH0425085 A JP H0425085A
Authority
JP
Japan
Prior art keywords
solid
state laser
laser
laser element
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12769490A
Other languages
Japanese (ja)
Inventor
Mitsuru Irie
満 入江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12769490A priority Critical patent/JPH0425085A/en
Publication of JPH0425085A publication Critical patent/JPH0425085A/en
Pending legal-status Critical Current

Links

Landscapes

  • Lasers (AREA)

Abstract

PURPOSE:To attain a miniaturized solid-state laser device which does not require dust prevention by arranging a semiconductor laser element, a solid-state laser element and a coupling optical system in the same package and providing a laser beam projecting window in the package by means of using the solid-state laser element. CONSTITUTION:Laser light 10a projected from a semiconductor laser 1 is collected and projected on the semiconductor laser element edge 3a by a coupling optical system 2. Then, a solid-state laser element 3, which is provided as the laser beam projecting window of a package 6, is excited by the laser beam 10a. Laser oscillation of the solid-state laser element 3 is generated in a laser resonator constituted by a flat mirror 3a provided on the end face of the solid- state laser element 3 by deposition, etc., and by a plano-concave mirror provided on the other end face 3b and solid-state laser beam 11 is taken out as transmitted light from the laser element end face 3b.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明は光学式情報記録再生装置やレーザプリンタな
どの光情報処理装置に用いられる固体レザ装置に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state laser device used in optical information processing devices such as optical information recording and reproducing devices and laser printers.

[従来の技術] 第2図は例えばCLEO,]987、Tecnical
  DigestTh  TIO:r370mW  1
.06μm、cw  TEMoo  output  
from  aNd:YAG  1aser  rod
  end−pumped  by  a  mono
lithicdiode arrayJに示された従来
の半導体レーザ光による端面励起方式固体レーザ装置を
示す断面図であり、図において、(1)は半導体レーザ
、(1,0a)は半導体Iノーザ出射光、(2)は結合
光学系、(3)は固体レーザ素子、(3a)は前記固体
レーザ素子(3)の端面に設けられたレーザ共振器用平
板ミラー、(3b)は固体レーザ出射光、(4)はヒー
トシンク、(5)はレーザ共振器用平凹ミラー、(7)
は金属基板である。
[Prior art] Fig. 2 shows, for example, CLEO, ]987, Technical
DigestTh TIO:r370mW 1
.. 06μm, cw TEMoo output
from aNd:YAG 1aser rod
end-pumped by a mono
1 is a sectional view showing a conventional edge-pumped solid-state laser device using semiconductor laser light shown in lithicdiode arrayJ; in the figure, (1) is a semiconductor laser, (1,0a) is a semiconductor I noser emitted light, (2) is a semiconductor laser; is a coupling optical system, (3) is a solid-state laser element, (3a) is a flat mirror for a laser resonator provided on the end face of the solid-state laser element (3), (3b) is a solid-state laser output light, and (4) is a heat sink. , (5) is a plano-concave mirror for laser resonator, (7)
is a metal substrate.

次に動作について説明する。Next, the operation will be explained.

半導体レーザ(1)より出射されたレーザ光(10a)
は、結合光学系(2)より固体レーザ素子端面(3a)
に集光照射される。次いで、前記レーザ光により固体レ
ーザ素子(3)が励起され、平板ミラー(3a)と平凹
ミラー(5)・とで構成されたレーザ共振器により固体
1ノーザ素子(3)によるレーザ発振が生じ、前記レー
ザ共振器用ミラー(5)からの透過光として固体レーザ
出ルI光(11)が取り出される。
Laser light (10a) emitted from the semiconductor laser (1)
is the solid-state laser element end face (3a) from the coupling optical system (2).
is focused and irradiated. Next, the solid-state laser element (3) is excited by the laser beam, and laser oscillation is caused by the solid-state laser element (3) by a laser resonator composed of a flat mirror (3a) and a plano-concave mirror (5). , solid-state laser output I light (11) is extracted as transmitted light from the laser resonator mirror (5).

[発明が解決しようとする課題] 従来の固体レーザ装置は、以上のように構成されている
ので、装置が大型化するとともに、防塵対策をすること
が必要であるなどの問題点があった。
[Problems to be Solved by the Invention] Since the conventional solid-state laser device is configured as described above, there have been problems such as the device becoming larger and requiring dust-proof measures.

この発明は上記のような問題点を解消するためになされ
たもので、小型化できるとともに、防塵対策が不要とな
る固体レーザ装置を得ることを目的とする。
This invention was made to solve the above-mentioned problems, and aims to provide a solid-state laser device that can be miniaturized and eliminates the need for dust-proofing measures.

[課題を解決するための手段] この発明に係わる固体レーザ装置は、半導体レーザ素子
、固体レーザ素子及び結合光学系を同一パッケージ内に
配置するとともに、パッケージに設けられたレーザ光出
射窓を固体レーザ素子を用いて構成したものである。
[Means for Solving the Problems] A solid-state laser device according to the present invention arranges a semiconductor laser element, a solid-state laser element, and a coupling optical system in the same package, and a laser beam exit window provided in the package is connected to a solid-state laser device. It is constructed using elements.

[作用] この発明における固体レーザ装置は、パッケージ内に固
体レーザ装置が構成されていることにより防塵対策がな
され、また、パッケージに設けられたレーザ光出射窓に
固体レーザ素子を用いることにより装置が小型化される
[Function] The solid-state laser device according to the present invention is dust-proofed by configuring the solid-state laser device in the package, and the device is protected from dust by using a solid-state laser element in the laser beam exit window provided in the package. Miniaturized.

[発明の実施例] 以下、この発明を図に基づいて説明する。[Embodiments of the invention] Hereinafter, this invention will be explained based on the drawings.

第1図はこの発明の一実施例による固体レーザ装置を示
す断面側面図であり、図において、(1)は半導体レー
ザ、(10a)は半導体レーザ前方出射光、(10b)
は半導体レーザ後方出射光、(2)結合光学系、(4)
はヒートシンク、(7)は金属基板、(6)は前記金属
基板(7)に固定されたパッケージ、(6a)は前記パ
ッケージ(6)に設けられた中心穴(レーザ光出射窓)
、(3)は前記中心穴に固定された固体レーザ素子、(
3a)は前記固体レーザ素子(3)の端面に設けられた
レーザ共振器用平板ミラー、(3b)は前記固体レーザ
素子(3)の端面に設けられたレーザ共振器用平凹ミラ
ー、(8)は前記金属基板に設けられたステム、(9)
は前記半導体レーザ後方出射光(10b)を検知する光
検知器である。
FIG. 1 is a cross-sectional side view showing a solid-state laser device according to an embodiment of the present invention, in which (1) is a semiconductor laser, (10a) is a forward emitted light beam from the semiconductor laser, and (10b) is a semiconductor laser.
is the rear emitted light of the semiconductor laser, (2) the coupling optical system, (4)
is a heat sink, (7) is a metal substrate, (6) is a package fixed to the metal substrate (7), and (6a) is a center hole (laser light emission window) provided in the package (6).
, (3) is a solid-state laser element fixed in the center hole, (
3a) is a flat mirror for a laser resonator provided on the end face of the solid-state laser element (3), (3b) is a plano-concave mirror for a laser resonator provided on the end face of the solid-state laser element (3), and (8) is a flat mirror for a laser resonator provided on the end face of the solid-state laser element (3). a stem provided on the metal substrate (9);
is a photodetector that detects the rear emitted light (10b) of the semiconductor laser.

次に動作について説明する。Next, the operation will be explained.

半導体レーザ(1)より出射されたレーザ光(10a)
は、結合光学系(2)より固体レーザ素子端面(3a)
に集光照射される。次いで、前記レーザ光(10a)に
よりパッケージ(6)レーザ光出射窓として設けられた
固体レーザ素子(3)が励起され、前記固体レーザ素子
(3)の端面に蒸着等で設けられた平板ミラー(3a)
と他の端面に設けられた平凹ミラー(5)とで構成され
たレーザ共振器により固体レーザ素子(3)によるレー
ザ発振が生じ、前記レーザ素子端面(3b)からの透過
光として固体レーザ出射光(11)が取り出される。
Laser light (10a) emitted from the semiconductor laser (1)
is the solid-state laser element end face (3a) from the coupling optical system (2).
is focused and irradiated. Next, the laser beam (10a) excites the solid-state laser element (3) provided as a laser beam exit window in the package (6), and a flat mirror (3) provided by vapor deposition or the like on the end face of the solid-state laser element (3) is excited. 3a)
Laser oscillation is generated by the solid-state laser element (3) by a laser resonator composed of a plano-concave mirror (5) provided on the other end face, and the solid-state laser is emitted as transmitted light from the laser element end face (3b). Emitted light (11) is extracted.

また、上記実施例では固体レーザ素子の端面励起方式の
場合について説明したが、側面励起方式の場合であって
もよく、上記実施例と同様の効果を奏する。さらに、上
記実施例では固体レーザ素子の両端面に光共振器用ミラ
ーを構成した場合について説明したが外部に光共振器用
ミラーを構成した場合であっても同様の効果が得られる
ことはいうまでもない。
Further, in the above embodiment, the case of the end-pumping method of the solid-state laser element has been described, but the case of the side-pumping method may also be used, and the same effects as in the above embodiment can be obtained. Furthermore, in the above embodiment, the case where optical resonator mirrors are configured on both end faces of the solid-state laser element is explained, but it goes without saying that the same effect can be obtained even when optical resonator mirrors are configured externally. do not have.

[発明の効果] 以」二のように、この発明によれば固体レーザ素子を半
導体レーザと同一のパッケージ内に配置し、パッケージ
に設けられたレーザ出射窓をレーザ共振器の一部として
構成したので装置が小型化でき、また防塵対策が不要と
なるので信頼性の高いものが得られる。
[Effects of the Invention] As described in 2 below, according to the present invention, the solid-state laser element is placed in the same package as the semiconductor laser, and the laser emission window provided in the package is configured as a part of the laser resonator. Therefore, the device can be made smaller, and since dustproof measures are not required, a highly reliable device can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例による固体レーザ装置を示
す断面側面図、第2図は従来の固体レーザ装置を示す断
面図である。 (1)は半導体レーザ、(2)は結合光学系、(3)は
固体レーザ素子、(4)はヒートシンク、(6)はパッ
ケージ、(7)は金属基板、(8)はステム、(9)は
光検知器である。 なお、図中、同一符号は同一、または相当部分を示す。
FIG. 1 is a cross-sectional side view showing a solid-state laser device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a conventional solid-state laser device. (1) is a semiconductor laser, (2) is a coupling optical system, (3) is a solid-state laser element, (4) is a heat sink, (6) is a package, (7) is a metal substrate, (8) is a stem, (9) ) is a photodetector. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (2)

【特許請求の範囲】[Claims] (1)同一パッケージ内に、半導体レーザ素子と固体レ
ーザ素子が結合して配置され、前記パッケージにレーザ
光出射窓が設けられた半導体レーザ光励起固体レーザ装
置において、前記レーザ光出射窓が固体レーザ素子で構
成されることを特徴とする固体レーザ装置。
(1) In a semiconductor laser light-excited solid-state laser device in which a semiconductor laser element and a solid-state laser element are combined and arranged in the same package, and the package is provided with a laser beam emission window, the laser beam emission window is connected to the solid-state laser element. A solid-state laser device comprising:
(2)前記固体レーザ素子の両端面、もしくは片端面に
ミラー作用を形成したことを特徴とする第1項記載の固
体レーザ装置。
(2) The solid-state laser device according to item 1, wherein a mirror effect is formed on both end surfaces or one end surface of the solid-state laser element.
JP12769490A 1990-05-16 1990-05-16 Solid-state laser device Pending JPH0425085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12769490A JPH0425085A (en) 1990-05-16 1990-05-16 Solid-state laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12769490A JPH0425085A (en) 1990-05-16 1990-05-16 Solid-state laser device

Publications (1)

Publication Number Publication Date
JPH0425085A true JPH0425085A (en) 1992-01-28

Family

ID=14966394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12769490A Pending JPH0425085A (en) 1990-05-16 1990-05-16 Solid-state laser device

Country Status (1)

Country Link
JP (1) JPH0425085A (en)

Similar Documents

Publication Publication Date Title
US20050163176A1 (en) Green diode laser
JP3053273B2 (en) Semiconductor pumped solid-state laser
JPH0425085A (en) Solid-state laser device
JPH0425084A (en) Solid-state laser device
JP2000012935A (en) Laser exciting device
JP2000261073A (en) Semiconductor laser pumped solid-state laser
JPH06308553A (en) Optical wavelength converter
JPH0425083A (en) Solid-state laser device
JPH05267753A (en) Solid laser
JPH06268290A (en) Slab-type solid-state laser medium
JPS609189A (en) Semiconductor laser device
US6341139B1 (en) Semiconductor-laser-pumped solid state laser
JP2002204020A (en) Heat sink, semiconductor laser device, semiconductor laser module, and raman amplifier
JP2754101B2 (en) Laser diode pumped solid state laser
JPH11163441A (en) Fixing structure for optical member
JP2906867B2 (en) Laser diode pumped solid-state laser wavelength converter
EP1317037A3 (en) Optical amplifier
JP3265644B2 (en) Semiconductor laser pumped solid-state laser device
JP2001332787A (en) Solid-state laser
JPH06209132A (en) Solid-state laser
JPH08181370A (en) Laser diode excitation solid state laser
JPH05343770A (en) Laser diode pumping solid laser
JPH06132586A (en) Solid state laser system
JP2568555B2 (en) Semiconductor laser
JPH04335586A (en) Laser diode pumping solid-state laser