JPH0424902A - Formation of resistor film - Google Patents
Formation of resistor filmInfo
- Publication number
- JPH0424902A JPH0424902A JP2124871A JP12487190A JPH0424902A JP H0424902 A JPH0424902 A JP H0424902A JP 2124871 A JP2124871 A JP 2124871A JP 12487190 A JP12487190 A JP 12487190A JP H0424902 A JPH0424902 A JP H0424902A
- Authority
- JP
- Japan
- Prior art keywords
- resistor film
- substrate
- resistor
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000010948 rhodium Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 7
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 22
- 238000010304 firing Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 5
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 abstract description 4
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 abstract description 4
- 229940088601 alpha-terpineol Drugs 0.000 abstract description 4
- 238000007639 printing Methods 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 abstract 1
- 239000002075 main ingredient Substances 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 60
- 238000005516 engineering process Methods 0.000 description 11
- WWZKQHOCKIZLMA-UHFFFAOYSA-M octanoate Chemical compound CCCCCCCC([O-])=O WWZKQHOCKIZLMA-UHFFFAOYSA-M 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000013212 metal-organic material Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 208000016261 weight loss Diseases 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- -1 alkaline earth metal octylate Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229920003174 cellulose-based polymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KZYDBKYFEURFNC-UHFFFAOYSA-N dioxorhodium Chemical compound O=[Rh]=O KZYDBKYFEURFNC-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 208000020442 loss of weight Diseases 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920001558 organosilicon polymer Polymers 0.000 description 1
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910003450 rhodium oxide Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
Ａ 発明の目的
１）産業上の利用分野
本発明は、ハイブリッドＩＣ、サーマルヘッド等の各種
電子部品に使用される抵抗体を形成するための抵抗体膜
形成方法に関し、特に厚膜技術を用いた抵抗体膜形成方
法に関する。DETAILED DESCRIPTION OF THE INVENTION A. Purpose of the Invention 1) Industrial Application Field The present invention relates to a method for forming a resistor film for forming a resistor used in various electronic components such as hybrid ICs and thermal heads. In particular, it relates to a method of forming a resistor film using thick film technology.
２） 従来の技術
抵抗体膜を形成する技術には厚膜技術と薄膜技術とがあ
る。前記Ｎ膜技術は、真空容器中の絶縁基板表面に蒸着
、スパッタリング等により抵抗体膜を形成する技術であ
り、薄くて均一な抵抗体膜を形成することができる反面
、製造設備が大型となってコスト高になるという問題点
があった。2) Conventional technology There are two types of technologies for forming resistor films: thick film technology and thin film technology. The above-mentioned N film technology is a technology in which a resistor film is formed by vapor deposition, sputtering, etc. on the surface of an insulating substrate in a vacuum container, and while it is possible to form a thin and uniform resistor film, it requires large manufacturing equipment. However, there was a problem in that the cost was high.
前記厚膜技術は、抵抗体膜形成用のペーストを絶縁基板
表面に塗布または印刷してから乾燥、焼成して抵抗体膜
を形成する技術であり、設備が安価で生産性も高く、低
コストであるが、従来多用されている厚膜技術によって
形成された抵抗体膜は一般に膜厚が厚いため抵抗体膜の
熱容量が太きく、また、抵抗体膜がμｍオーダの粉体の
焼結体であるため抵抗値のバラツキが大きい上、電界強
度も弱いという問題点があった。そして、このような抵
抗体膜を発熱抵抗体として用いたサーマルヘッドは、エ
ネルギ消費量が大きく、熱応答性にも劣り、抵抗値も変
化し易いという問題点があった。The thick film technology is a technology in which a resistor film is formed by coating or printing a paste for forming a resistor film on the surface of an insulating substrate, then drying and baking it, and the equipment is inexpensive and the productivity is high. However, the resistor film formed by the conventionally widely used thick film technology is generally thick and has a large heat capacity. Therefore, there were problems in that the resistance value varied widely and the electric field strength was weak. A thermal head using such a resistor film as a heating resistor has problems in that it consumes a large amount of energy, has poor thermal responsiveness, and is susceptible to change in resistance value.
３）発明が解決しようとする課題
そこで、従来、製造設備の安価な前記厚膜技術を用いて
薄膜状の抵抗体膜を製造する技術が種々提案されており
、それらの技術の一種として、ＭＯＤ （Ｍｅｔａｌ−
Ｏｒｇａｎｉｃ Ｄｅｐｏｓｉｔｉｏｎ）法が提案され
ている。3) Problems to be Solved by the Invention Therefore, in the past, various techniques have been proposed for manufacturing thin resistor films using the above-mentioned thick film technology, which requires inexpensive manufacturing equipment, and one of these techniques is MOD. (Metal-
Organic Deposition) method has been proposed.
このＭＯＤ法において発熱抵抗体形成用の抵抗体膜は、
ルテニウム（Ｒｕ ） 、イリジウム（Ｉｒ）またはロ
ジウム（Ｒｈ）等の一群の元素から選択した少なくとも
一種の金属Ｍと、シリコン（Ｓｉ）、バリウム（Ｂａ）
、ビスマス〈Ｂｌ）、鉛（Ｐｂ）等の元素を含む金属有
機物材料を基板に塗布、乾燥して形成される。このＭＯ
Ｄ法は、安価な設備で生産性が高く、均一な薄い抵抗体
膜が得られるというメリットがあるが、用いる金属有機
物の種属、組み合せや、有機配位子成分の構造の違いに
より、成膜性が大きく異なる。たとえば特開昭６４−５
４７１０号公報には、オクチル酸ルテニウムとアルカリ
土類金属のオクチル酸塩の混合溶液を塗布・焼成して単
層のペロブスカイト型のルテニウム酸塩を成分とする薄
膜状の抵抗体膜を形成する方法が記載されている。しか
しながら、前記特開昭６４−５４７１０号公報に記載さ
れた材料の組み合せでは、絶縁基板上に抵抗体膜を形成
した場合、基板との密着性が低く、クラックが生じ潟い
という問題点があった。前記基板との密着性が低く、ク
ラックが生じ易い原因は、次のようだと考えられる。す
なわち、前記オクチル酸ルテニウムとアルカリ土類金属
のオクチル酸厘の混合溶液（すなわち抵抗体膜形成用材
料）は、それを基板に塗布、乾燥してから焼成する際温
度が上昇する過程において、ある温度で急激に〈爆発的
に）燃焼してそのとき重量が急減する。この重量が急減
するとき、前記抵抗体膜形成用材料は、クラックやピン
ホールが発生し、基板との密着性が損なわれるものと考
えられる。In this MOD method, the resistor film for forming the heating resistor is
At least one metal M selected from a group of elements such as ruthenium (Ru), iridium (Ir), or rhodium (Rh), silicon (Si), barium (Ba)
It is formed by applying a metal-organic material containing elements such as , bismuth (Bl), and lead (Pb) to a substrate and drying it. This M.O.
Method D has the advantage of being highly productive with inexpensive equipment and being able to obtain uniform thin resistor films. Membrane properties differ greatly. For example, JP-A-64-5
Publication No. 4710 describes a method of forming a thin resistor film containing a single layer of perovskite-type ruthenate by coating and baking a mixed solution of ruthenium octylate and an octylate of an alkaline earth metal. is listed. However, the combination of materials described in JP-A No. 64-54710 has the problem that when a resistor film is formed on an insulating substrate, the adhesion to the substrate is low and cracks occur. Ta. The reason why the adhesion with the substrate is low and cracks are likely to occur is considered to be as follows. In other words, the mixed solution of ruthenium octylate and alkaline earth metal octylate (i.e., material for forming a resistor film) is coated on a substrate, dried, and then fired, during which the temperature rises. It burns rapidly (explosively) depending on the temperature, and its weight suddenly decreases. When the weight suddenly decreases, it is thought that cracks and pinholes occur in the resistor film forming material, which impairs its adhesion to the substrate.
本発明は前述の事情および検討結果に鑑み、抵抗体膜が
均一で基板との密着強度が大きく電気的特性の優れた抵
抗体膜の製造方法を提供することを課題とする。In view of the above-mentioned circumstances and study results, it is an object of the present invention to provide a method for manufacturing a resistor film that is uniform, has strong adhesion to a substrate, and has excellent electrical characteristics.
Ｂ 発明の構成
１）課題を解決するための手段
前記課題を解決するために本発明の抵抗体膜形成方法は
、ルテニウム（Ｒｕ）、イリジウム（Ｉｒ）、ロジウム
（Ｒｈ）の中から選択した金属元素のメルカプチド化合
物と、ケイ素（Ｓｉ）、ビスマス（Ｂ１）、鉛（Ｐｂ）
の中から選択した金属元素の有機化合物とを主成分とす
る抵抗体膜形成用材料を基板上に塗布、焼成することを
特徴とする。B. Structure of the Invention 1) Means for Solving the Problems In order to solve the above problems, the resistor film forming method of the present invention uses a metal selected from ruthenium (Ru), iridium (Ir), and rhodium (Rh). Elemental mercaptide compounds and silicon (Si), bismuth (B1), lead (Pb)
The method is characterized in that a material for forming a resistor film whose main component is an organic compound of a metal element selected from among the following is applied onto a substrate and fired.
２）作 用
本発明の抵抗体膜形成方法で使用する前記ルテニウム（
Ｒｕ）、イリジウム（Ｉｒ）、ロジウム（Ｒｈ＞の中か
ら選択した金属元素のメルカプチド化合物は、白金族元
素とイオウを配位原子とする化合物である。このような
化合物は安定であり、気中焼成（酸素雰囲気中で焼成）
する際、熱による分解速度はゆるやかであり、爆発的に
燃焼して重量が急減するようなことはない。したがって
、前記メルカプチド化合物および前記有機化合物を主成
分とする抵抗体膜形成用材料は、徐々に燃焼して、酸化
ルテニウム（ＲｕＯ２）、酸化イリジウム（ＩｒＯ２）
、または酸化ロジウム（ＲｈＯ２）を均一に含有する抵
抗体膜となる。この抵抗体膜はサブミクロンのレベルで
均質であり、クラックやピンホールがなく、基板との密
着強度が大きい６３）実施例
以下、図面を参照して本発明の抵抗体膜形成方法の実施
例を説明する。2) Function The ruthenium (
A mercaptide compound of a metal element selected from Ru), iridium (Ir), and rhodium (Rh) is a compound having a platinum group element and sulfur as coordination atoms.Such compounds are stable and do not react in air. Firing (firing in oxygen atmosphere)
When doing so, the rate of decomposition due to heat is slow and there is no explosive combustion and sudden loss of weight. Therefore, the material for forming a resistor film containing the mercaptide compound and the organic compound as main components gradually burns to form ruthenium oxide (RuO2) and iridium oxide (IrO2).
, or a resistor film uniformly containing rhodium oxide (RhO2). This resistor film is homogeneous at the submicron level, has no cracks or pinholes, and has high adhesion strength to the substrate.63) Examples The following are examples of the resistor film forming method of the present invention with reference to the drawings. Explain.
［第１実施例］
第１図において、アルミナ等のセラミック製の基板本体
１ａとその表面に形成されたアンダーグレーズ層１ｂと
から構成された絶縁基板１の表面に、抵抗体膜形成用材
料をスクリーン印刷によりベタ印刷する。[First Example] In FIG. 1, a material for forming a resistor film is applied to the surface of an insulating substrate 1 composed of a substrate main body 1a made of ceramic such as alumina and an underglaze layer 1b formed on the surface thereof. Solid printing using screen printing.
前記抵抗体膜形成用材料としては、下記の各金属有機物
材料を混合して使用する。As the material for forming the resistor film, the following metal-organic materials are used in combination.
ルテニウムトリルメルカプチド［Ｒｕ（ＳＣｓＨａＣＨ
３）３コ、
有機シリコンポリマ［Ｓ ｉｏ （ＣｓＨａＣＨ３）２
］２、ビスマスＢｉまたは鉛ｐｂのオクチル酸塩［Ｂｉ
（Ｃ７Ｈ＋５ＣＯＯ）３１または［Ｐ ｂ（ＣｙＨ１５
ｃ ＯＯ）２］、すなわち、上記各金属有機物を焼成後
の原子数比が、Ｒｕ： Ｓｉ： Ｂｉ（またはＰｂ）＝
１ ： ０．５ ： ０．５となるような割合で混合
し、さらに、α−ターピネオール、ブチルカルピトール
アセテート等の溶剤を使用して粘度を８０００〜２００
００ｃｐｓに調整する。この混合物（抵抗体膜形成用材
料）を１００〜４００メツシユのステンレススクリーン
を用いて前記絶縁基板１表面上に印刷塗布する。Ruthenium tolyl mercaptide [Ru(SCsHaCH
3) 3, organic silicon polymer [S io (CsHaCH3)2
]2, octylate of bismuth Bi or lead pb [Bi
(C7H+5COO)31 or [P b(CyH15
cOO)2], that is, the atomic ratio of each of the above metal organic substances after firing is Ru: Si: Bi (or Pb) =
They were mixed at a ratio of 1:0.5:0.5, and the viscosity was adjusted to 8000-200 using a solvent such as α-terpineol or butylcarpitol acetate.
Adjust to 00cps. This mixture (material for forming a resistor film) is printed and coated on the surface of the insulating substrate 1 using a stainless steel screen of 100 to 400 meshes.
この印刷塗布された絶縁基板１を１２０°Ｃで乾燥して
から、赤外線ベルト焼成炉において８００℃のピーク温
度で１０分間焼成して抵抗体膜３を形成するにのように
して形成された抵抗体Ｍ２は、膜厚０．１〜０．５μｍ
であり、シート抵抗は膜厚０２μｍに換算して５０Ω／
口程度である。The printed insulating substrate 1 is dried at 120°C, and then fired in an infrared belt firing furnace at a peak temperature of 800°C for 10 minutes to form the resistor film 3. Body M2 has a film thickness of 0.1 to 0.5 μm
The sheet resistance is 50Ω/converted to a film thickness of 02 μm.
It's about the size of a mouthful.
なお第２区は、本実施例の前記混合物すなわち、抵抗体
膜形成用材料を焼成する際の重量減少を示すグラフであ
り、Ａは重量減少曲線、ＢはＡの微分曲線である。第２
図から分かるように、抵抗体膜形成用材料の重量は徐々
にゆるやかに減少しており、重量減少曲線Ａが垂直にな
るような重量減少（すなわち、爆発的な燃焼による急激
な重量減少）は生じていない。Note that the second section is a graph showing the weight loss during firing of the mixture of this example, that is, the material for forming a resistor film, where A is a weight loss curve and B is a differential curve of A. Second
As can be seen from the figure, the weight of the material for forming the resistor film gradually decreases, and the weight decrease that makes the weight decrease curve A vertical (i.e., a rapid weight decrease due to explosive combustion) It has not occurred.
［第２実施例］
前記第１実施例と同様の絶縁基板（図示せず）の表面に
、抵抗体膜形成用材料をスクリーン印刷によりベタ印刷
する。[Second Example] A material for forming a resistor film is printed all over the surface of an insulating substrate (not shown) similar to that in the first example by screen printing.
前記抵抗体膜形成用材料としては、下記の各金属有機物
材料を混合して使用する。As the material for forming the resistor film, the following metal-organic materials are used in combination.
イリジウムオクチルメルカプチド［Ｉ ｒ （Ｓ Ｃｅ
ＨＩ７）３］
ケイ素Ｓｉのオクチル酸塩［Ｓ ｉ（Ｃ７Ｈ１６ｃ Ｏ
Ｏ）ａ］ビスマスＢｌのオクチル酸塩［Ｂ ｉ（Ｃ７８
１５Ｃ０Ｏ）３］
すなわち、上記各金属有機物を焼成後の原子数比が、Ｉ
ｒ： Ｓｉ ：Ｂｉ＝１ ： １ ： １となるような
割合で混合し、さらに、α−ターピネオール、ブチルカ
ルピトールアセテート等の溶剤を使用して粘度を８００
０〜２００００Ｃｐｓに調整する。Iridium octyl mercaptide [I r (S Ce
HI7)3] Octylate of silicon Si [S i (C7H16c O
O) a] octylate of bismuth Bl [B i (C78
15C0O)3] That is, the atomic ratio after firing each of the above metal organic substances is I
r:Si:Bi=1:1:1, and further, the viscosity was reduced to 800 using a solvent such as α-terpineol or butylcarpitol acetate.
Adjust to 0-20000Cps.
この混合物を２５０〜４００メツシユのステンレススク
リーンを用いて前記絶縁基板表面上に印刷塗布する。こ
の印刷塗布された絶縁基板を１２０°Ｃで乾燥してから
、赤外線ベルト焼成炉において８００℃のピーク温度で
１０分間焼成して抵抗体膜を形成する。このようにして
形成された抵抗体膜は、膜厚Ｏ１１〜０．３μｍであり
、シート抵抗は１１１１０、２μｍに換算して４５０Ω
／口程度である。This mixture is printed and coated on the surface of the insulating substrate using a 250-400 mesh stainless steel screen. This printed insulating substrate is dried at 120° C. and then fired in an infrared belt firing furnace at a peak temperature of 800° C. for 10 minutes to form a resistor film. The resistor film thus formed has a film thickness of O11 to 0.3 μm, and a sheet resistance of 11110, which is 450Ω when converted to 2 μm.
/ About a mouthful.
［第３実施例］
前記第１実施例と同様の絶縁基板の表面に、抵抗体膜形
成用材料をスクリーン印刷によりベタ印刷する。[Third Example] A material for forming a resistor film is printed all over the surface of the same insulating substrate as in the first example by screen printing.
前記抵抗体膜形成用材料としては、下記の各金属有機物
材料を混合して使用する。As the material for forming the resistor film, the following metal-organic materials are used in combination.
ロジウムベンジルメルカプチド［Ｒｈ（ＳＣ）（２Ｃｓ
Ｈｓン、コ
ケイ素Ｓｊの有機ポリマー［Ｓ ｉｏ （Ｃ７ＨＩ＋ｉ
０ ）２３２鉛ｐｂのオクチル酸塩［Ｐ ｂ （Ｃ７Ｈ
＋ ｓＣＯ○）２］すなわち、上記各金属有機物を焼成
後の原子数比が、Ｒｈ： Ｓ ｉ ： Ｐｂ＝ １ ：
０．５： ０．５となるような割合で混合し、さらに
、α−ターピネオール、ブチルカルピトールアセテート
等の溶剤を使用し、セルロース系の高分子を用いて粘度
を８０００〜１５０００ｃｐｓに調整する。この混合物
を３２５〜４００メツシユのステンレススクリーンを用
いて前記絶縁基板表面上に印刷塗布する。この印刷塗布
された絶縁基板を１００°Ｃで乾燥してから、赤外線ベ
ルト焼成炉において８００″Ｃのピーク温度で１０分間
焼成して抵抗体膜を形成する。このようにして形成され
た抵抗体膜は、膜厚０．１〜０．２μｍであり、シート
抵抗は膜厚０．２μｍに換算して４５００Ω／口程度で
ある。Rhodium benzyl mercaptide [Rh (SC) (2Cs
Hsun, cosilicon Sj organic polymer [S io (C7HI+i
0 ) Octylate of 232 lead pb [P b (C7H
+sCO○)2] That is, the atomic ratio of each of the above metal organic substances after firing is Rh: Si: Pb= 1:
They are mixed at a ratio of 0.5:0.5, and the viscosity is further adjusted to 8,000 to 15,000 cps using a cellulose-based polymer using a solvent such as α-terpineol or butylcarpitol acetate. This mixture is printed onto the surface of the insulating substrate using a 325-400 mesh stainless steel screen. This printed insulating substrate is dried at 100°C and then fired in an infrared belt firing furnace at a peak temperature of 800″C for 10 minutes to form a resistor film.The resistor film thus formed is The film has a thickness of 0.1 to 0.2 μm, and the sheet resistance is approximately 4500Ω/mouth when converted to a film thickness of 0.2 μm.
以上、本発明による抵抗体膜の形成方法の実施例を詳述
したが、本発明は、前記実施例に限定されるものではな
く、特許請求の範囲に記載された本発明を逸脱すること
なく、種々の小設計変更を行うことが可能である。Although the embodiments of the method for forming a resistor film according to the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and the present invention does not depart from the scope of the present invention as set forth in the claims. , it is possible to make various minor design changes.
例えば、抵抗体膜形成用材料としては実施例で示したも
の以外の材料も使用することが可能であり、使用する材
料に応じて、粘度、焼成温度、焼成時間等も変えること
が可能である。また、抵抗体膜形成用材料を絶縁基板表
面に塗布する方法としては、スクリーン印刷法の代わり
に、デイツプ法、ロールコート法、スピンコード法等を
採用することも可能である。For example, materials other than those shown in the examples can be used as resistor film forming materials, and the viscosity, firing temperature, firing time, etc. can also be changed depending on the material used. . Furthermore, as a method for applying the resistor film forming material onto the surface of the insulating substrate, it is also possible to employ a dip method, a roll coating method, a spin code method, etc. instead of the screen printing method.
Ｃ１発明の効果
前述の本発明の抵抗体膜形成方法は、ルテニウム（Ｒｕ
）、イリジウム（Ｉｒ）、ロジウム（Ｒｈ）の中から選
択した金属元素のメルカプチド化合物と、ケイ素（Ｓｉ
）、ビスマス（Ｂｉ）、鉛（Ｐｂ）の中から選択した金
属元素の有機化合物とを主成分とする抵抗体膜形成用材
料を基板上に塗布、焼成するので、焼成する際の抵抗体
膜形成用材料の燃焼、分解速度はゆるやかであり、爆発
的に燃焼して重量が急減するようなことはない、したが
って、本発明の前記抵抗体膜形成材料は、徐々に燃焼し
て、酸化ルテニウム（ＲＩＩ０２＞、酸化イリジウム（
ＩｒＯ２）、または酸化ロジウム（Ｒｈ０２ ）を均一
に含有する抵抗体膜となる。この抵抗体膜はサブミクロ
ンのレベルで均質であり、クラックやピンホールがなく
、基板との密着強度が大きい。したがって、本発明によ
って形成される前記抵抗体膜は、抵抗値のばらつきが小
さく、また、電界、電力に対する強度が大きく、電力印
加時の抵抗値変動が小さい。すなわち、本発明の抵抗体
膜の形成方法によれば、前記成膜特性および電気的特性
の優れた抵抗体膜を簡素な設備を使用して低コストで形
成することができる。C1 Effects of the Invention The method for forming a resistor film of the present invention described above uses ruthenium (Ru
), iridium (Ir), and rhodium (Rh), and silicon (Si).
), bismuth (Bi), and an organic compound of a metal element selected from lead (Pb). The combustion and decomposition rate of the forming material is slow, and it does not burn explosively and suddenly lose weight. Therefore, the resistor film forming material of the present invention burns gradually and decomposes into ruthenium oxide. (RII02>, iridium oxide (
This results in a resistor film uniformly containing IrO2) or rhodium oxide (Rh02). This resistor film is homogeneous at the submicron level, has no cracks or pinholes, and has high adhesion strength to the substrate. Therefore, the resistor film formed according to the present invention has small variations in resistance value, high strength against electric field and power, and small fluctuation in resistance value when power is applied. That is, according to the method for forming a resistor film of the present invention, a resistor film having excellent film formation characteristics and electrical characteristics can be formed at low cost using simple equipment.
第１図は本発明の抵抗体膜形成方法の第１実施例の説明
図、第２図は同実施例の作用説明図、である。FIG. 1 is an explanatory diagram of a first embodiment of the resistor film forming method of the present invention, and FIG. 2 is an explanatory diagram of the operation of the same embodiment.
Claims (1)
ム（Ｒｈ）の中から選択した金属元素のメルカプチド化
合物と、ケイ素（Ｓｉ）、ビスマス（Ｂｉ）、鉛（Ｐｂ
）の中から選択した金属元素の有機化合物とを主成分と
する抵抗体膜形成用材料を基板上に塗布、焼成すること
を特徴とする抵抗体膜形成方法。 ２）前記メルカプチド化合物がアリール基またはアルキ
ル基を含むことを特徴とする請求項１記載の抵抗体膜形
成方法。[Claims] 1) A mercaptide compound of a metal element selected from ruthenium (Ru), iridium (Ir), and rhodium (Rh), and silicon (Si), bismuth (Bi), and lead (Pb).
1. A method for forming a resistor film, which comprises applying a material for forming a resistor film, the main component of which is an organic compound of a metal element selected from ) on a substrate, and firing the material. 2) The method for forming a resistor film according to claim 1, wherein the mercaptide compound contains an aryl group or an alkyl group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2124871A JP2847894B2 (en) | 1990-05-15 | 1990-05-15 | Resistor film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2124871A JP2847894B2 (en) | 1990-05-15 | 1990-05-15 | Resistor film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0424902A true JPH0424902A (en) | 1992-01-28 |
| JP2847894B2 JP2847894B2 (en) | 1999-01-20 |
Family
ID=14896163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2124871A Expired - Fee Related JP2847894B2 (en) | 1990-05-15 | 1990-05-15 | Resistor film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2847894B2 (en) |
-
1990
- 1990-05-15 JP JP2124871A patent/JP2847894B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2847894B2 (en) | 1999-01-20 |
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