JPH04246826A - Etching method for flattening of substrate surface - Google Patents
Etching method for flattening of substrate surfaceInfo
- Publication number
- JPH04246826A JPH04246826A JP3056242A JP5624291A JPH04246826A JP H04246826 A JPH04246826 A JP H04246826A JP 3056242 A JP3056242 A JP 3056242A JP 5624291 A JP5624291 A JP 5624291A JP H04246826 A JPH04246826 A JP H04246826A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- potential electrode
- etching method
- negative potential
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000005530 etching Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 239000012495 reaction gas Substances 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 10
- 230000001737 promoting effect Effects 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- -1 argon ions Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はエッチング方法に係り、
特に表面に微細なパターンのある基板表面を平坦化する
エッチング方法に関するものである。[Industrial Application Field] The present invention relates to an etching method,
In particular, the present invention relates to an etching method for planarizing a substrate surface having a fine pattern on the surface.
【０００２】0002
【従来の技術】従来、微細なパターンのある基板表面を
平坦化する場合、図４に示すようなエッチング装置によ
り行なわれている。すなわち、図４において、エッチン
グ装置１は、図示しない真空ポンプにより排気され得る
真空槽２と、該真空槽２内にて互いに対向するように配
設された正電位電極３及び負電位電極４と、該正電位電
極３及び負電位電極４の間に接続された高周波電源５と
から構成されている。2. Description of the Related Art Conventionally, the surface of a substrate having a fine pattern has been planarized using an etching apparatus as shown in FIG. That is, in FIG. 4, the etching apparatus 1 includes a vacuum chamber 2 that can be evacuated by a vacuum pump (not shown), and a positive potential electrode 3 and a negative potential electrode 4 that are arranged to face each other in the vacuum chamber 2. , and a high frequency power source 5 connected between the positive potential electrode 3 and the negative potential electrode 4.
【０００３】このように構成されたエッチング装置１に
より基板表面を平坦化する場合、まず、負電位電極４の
正電位電極３側に、表面を平坦化すべき基板６を配置し
て、図示しない真空ポンプ等により該真空槽２内を真空
にした後、該真空槽２に設けられたガス注入口２ａを介
して該真空槽２内にアルゴンガス７を導入し、続いて高
周波電源６により、正電位電極３及び負電位電極４の間
にグロー放電を生じさせる。When planarizing a substrate surface using the etching apparatus 1 configured as described above, first, the substrate 6 whose surface is to be planarized is placed on the positive potential electrode 3 side of the negative potential electrode 4, and then the substrate 6 is placed in a vacuum (not shown). After evacuating the vacuum chamber 2 using a pump or the like, argon gas 7 is introduced into the vacuum chamber 2 through a gas inlet 2a provided in the vacuum chamber 2, and then a high frequency power source 6 is used to energize the vacuum chamber 2. A glow discharge is generated between the potential electrode 3 and the negative potential electrode 4.
【０００４】このとき、該真空槽２内に導入されたアル
ゴンガス７は、イオン化されて負電位電極４に向かって
加速される。これにより、アルゴンイオン７は、基板６
の表面に衝突することになり、この衝突により基板６の
表面をエッチングし、平坦化する。At this time, the argon gas 7 introduced into the vacuum chamber 2 is ionized and accelerated toward the negative potential electrode 4. As a result, the argon ions 7 are transferred to the substrate 6.
The surface of the substrate 6 is etched and flattened by this collision.
【０００５】また、突部６ａを有する基板６は、平坦度
の精度を向上するために、図５の如く、該基板６の基板
面６ｂがアルゴンイオン７の進入方向に対して略平行に
配設されている。Further, in order to improve the accuracy of flatness of the substrate 6 having the protrusion 6a, the substrate surface 6b of the substrate 6 is arranged approximately parallel to the direction of entry of the argon ions 7, as shown in FIG. It is set up.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、このよ
うな基板表面を平坦化するエッチング方法においては、
物理的にイオンを基板表面に衝突させるエッチング方法
のため、エッチング速度が遅いという課題があった。[Problems to be Solved by the Invention] However, in such an etching method for flattening the substrate surface,
Since the etching method physically bombards the substrate surface with ions, the etching rate is slow.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
に、表面に微細なパターンのある基板表面を平坦化する
エッチング方法において、反応ガスを導入した真空槽内
に対向して配設された正電位電極と負電位電極との間に
グロー放電を生じさせて、該反応ガスをイオン化させて
加速し、負電位電極の手前、かつ基板面がイオンの進入
方向に対して略平行に配置した基板上に衝突させ、かつ
該イオンの化学反応促進作用により基板表面を平坦化す
るエッチング方法を提供する。[Means for Solving the Problems] In order to solve the above problems, in an etching method for flattening the surface of a substrate having a fine pattern on the surface, two devices are placed facing each other in a vacuum chamber into which a reactive gas is introduced. A glow discharge was generated between a positive potential electrode and a negative potential electrode to ionize and accelerate the reaction gas, and the substrate surface was placed in front of the negative potential electrode and approximately parallel to the direction of ion entry. Provided is an etching method that flattens the surface of a substrate by colliding the ions onto the substrate and promoting a chemical reaction of the ions.
【０００８】[0008]
【作用】本発明によれば、凹凸のある基板表面を能率良
く平坦化できる。[Operation] According to the present invention, an uneven substrate surface can be efficiently planarized.
【０００９】[0009]
【実施例】以下、図１、図２に示した一実施例に基づい
て、本発明をさらに説明する。[Embodiment] The present invention will be further explained below based on an embodiment shown in FIGS. 1 and 2.
【００１０】図１は、本発明による基板表面を平坦化す
るエッチング方法を実施するための一実施例を示してお
り、エッチング装置１０は、図示しない真空ポンプによ
り排気され得る真空槽１１と、該真空槽１１内にて互い
に対向するように配設された正電位電極１２及び負電位
電極１３と、該正電位電極１２及び負電位電極１３の間
に接続された高周波電源１４とから構成されている。FIG. 1 shows an embodiment for implementing the etching method for planarizing a substrate surface according to the present invention, and an etching apparatus 10 includes a vacuum chamber 11 that can be evacuated by a vacuum pump (not shown), and a vacuum chamber 11 that can be evacuated by a vacuum pump (not shown). It is composed of a positive potential electrode 12 and a negative potential electrode 13 arranged to face each other in the vacuum chamber 11, and a high frequency power source 14 connected between the positive potential electrode 12 and the negative potential electrode 13. There is.
【００１１】このように構成されたエッチング装置１０
により基板表面を平坦化する場合、まず負電位電極１３
の正電位電極１２側に、表面を平坦化すべき基板１５を
配置して、図示しない真空ポンプ等により、該真空槽１
１内を真空にした後、該真空槽１１に設けられたガス注
入口１１ａを介して、該真空槽１１内に酸素とフッ化炭
素からなる反応ガス１６を導入し、続いて高周波電源１
４により正電位電極１２及び負電位電極１３の間にグロ
ー放電を生じさせる。Etching apparatus 10 configured as described above
When flattening the substrate surface, first the negative potential electrode 13
A substrate 15 whose surface is to be flattened is placed on the positive potential electrode 12 side of the vacuum chamber 1, and the vacuum chamber 1 is
After evacuating the inside of the vacuum chamber 11, a reaction gas 16 consisting of oxygen and fluorocarbon is introduced into the vacuum chamber 11 through a gas inlet 11a provided in the vacuum chamber 11.
4, a glow discharge is generated between the positive potential electrode 12 and the negative potential electrode 13.
【００１２】このとき、該真空槽１１内に導入された反
応ガス１６は、イオン化されて負電位電極１３に向かっ
て加速される。これにより、反応イオン１６は、基板１
５の表面に衝突することになり、この衝突により、基板
１５の表面をエッチングし、平坦化する。At this time, the reaction gas 16 introduced into the vacuum chamber 11 is ionized and accelerated toward the negative potential electrode 13. As a result, the reactive ions 16 are transferred to the substrate 1
This collision causes the surface of the substrate 15 to be etched and flattened.
【００１３】更に、反応ガス１６は基板１５の表面に衝
突した際に、化学反応して基板１５の表面を気体にする
ことによるエッチングも同時に行なう。Furthermore, when the reactive gas 16 collides with the surface of the substrate 15, it undergoes a chemical reaction to convert the surface of the substrate 15 into a gas, thereby etching the surface at the same time.
【００１４】また、突部１５ａを有する基板１５は、図
２及び図３に示す如く、平坦度の精度を向上するために
基板１５の基板面１５ｂが反応イオン１６の進入方向に
対して略平行または平行に配設されている。Further, as shown in FIGS. 2 and 3, the substrate 15 having the protrusion 15a has a substrate surface 15b that is substantially parallel to the direction of entry of the reactive ions 16 in order to improve the accuracy of flatness. or arranged in parallel.
【００１５】[0015]
【発明の効果】以上のように、本発明による基板表面を
平坦化するエッチング方法は、基板の基板面をイオンの
進入方向に対して略平行に配設し、かつ反応ガスをイオ
ン化させて、イオンを基板に向かって加速しているので
、物理的なエッチングと化学的なエッチングを同時に行
なわれるため、基板表面の凹凸を精度良く平坦化できる
と共に、エッチング速度が速く、能率の良いエッチング
が行なえるという利点がある。As described above, the etching method for flattening the surface of a substrate according to the present invention involves arranging the substrate surface of the substrate approximately parallel to the direction of ion entry, and ionizing the reactive gas. Since ions are accelerated toward the substrate, physical etching and chemical etching are performed at the same time, so unevenness on the substrate surface can be flattened with high precision, and the etching speed is high, allowing efficient etching. It has the advantage of being
【図１】本発明に係る基板表面を平坦化するエッチング
方法を実施するための装置の一実施例を示す概略図であ
る。FIG. 1 is a schematic diagram showing an embodiment of an apparatus for carrying out an etching method for planarizing a substrate surface according to the present invention.
【図２】本発明に係る基板表面を平坦化するエッチング
方法の一実施例を示す図で、要部拡大図である。FIG. 2 is a diagram illustrating an embodiment of the etching method for planarizing a substrate surface according to the present invention, and is an enlarged view of the main part.
【図３】本発明に係る基板表面を平坦化するエッチング
方法の一実施例を示す図で、要部拡大図である。FIG. 3 is a diagram illustrating an embodiment of the etching method for flattening the surface of a substrate according to the present invention, and is an enlarged view of the main part.
【図４】従来のエッチング方法の装置を示す概略図であ
る。FIG. 4 is a schematic diagram showing an apparatus for a conventional etching method.
【図５】従来のエッチング方法を示す図で、要部拡大断
面図である。FIG. 5 is a diagram showing a conventional etching method, and is an enlarged cross-sectional view of a main part.
１１ 真空槽 １２ 正電位電極 １３ 負電位電極 １５ 基板 １６ 反応ガス 11 Vacuum chamber 12 Positive potential electrode 13 Negative potential electrode 15 Substrate 16 Reactant gas
Claims (1)
を平坦化するエッチング方法において、反応ガスを導入
した真空槽内に対向して配設された正電位電極と負電位
電極との間にグロー放電を生じさせて、該反応ガスをイ
オン化させて加速し、負電位電極の手前かつ基板面がイ
オンの進入方向に対して略平行に配置した基板上に衝突
させ、かつ該イオンの化学反応促進作用により基板表面
を平坦化するエッチング方法。Claim 1: In an etching method for flattening the surface of a substrate having a fine pattern on the surface, a glow is applied between a positive potential electrode and a negative potential electrode that are disposed facing each other in a vacuum chamber into which a reactive gas is introduced. Generating an electric discharge to ionize and accelerate the reaction gas, causing it to collide with a substrate placed in front of the negative potential electrode and with the substrate surface substantially parallel to the direction of ion entry, and promoting a chemical reaction of the ions. An etching method that flattens the surface of a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3056242A JPH04246826A (en) | 1991-01-31 | 1991-01-31 | Etching method for flattening of substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3056242A JPH04246826A (en) | 1991-01-31 | 1991-01-31 | Etching method for flattening of substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04246826A true JPH04246826A (en) | 1992-09-02 |
Family
ID=13021627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3056242A Pending JPH04246826A (en) | 1991-01-31 | 1991-01-31 | Etching method for flattening of substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04246826A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006000945A (en) * | 2004-06-15 | 2006-01-05 | National Institute Of Advanced Industrial & Technology | Plasma etching method |
-
1991
- 1991-01-31 JP JP3056242A patent/JPH04246826A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006000945A (en) * | 2004-06-15 | 2006-01-05 | National Institute Of Advanced Industrial & Technology | Plasma etching method |
| JP4534010B2 (en) * | 2004-06-15 | 2010-09-01 | 独立行政法人産業技術総合研究所 | Plasma etching method |
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