JPH04246817A - Resist ashing device - Google Patents

Abstract

PURPOSE:To obtain a resist ashing device with which the resists having difference in film thickness can be removed by dissolving the resist adhered to a substrate using the mixed gas containing ozone and oxygen. CONSTITUTION:When the resist 32 adhered to a substrate 31 is removed by decomposition, the resist ashing device, which is provided with a heating device 21 to be used to heat up the substrate 31, is composed of a plurality of heating devices with which the heating device 21 is independently controlled and the optional region of the substrate 31 can be heated up at an arbitrary temperature.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention is a resist ashing device that decomposes and removes resist adhered to a substrate using a mixed gas containing ozone and oxygen, and in particular removes resists with different film thickness almost simultaneously. This article relates to a resist ashing device that can be used. With the miniaturization of wiring patterns in semiconductor devices, etc., resist ashing equipment, which uses ozone (03) to decompose and remove organic resist adhered to substrates, is increasingly being used in the manufacturing process of semiconductor devices. It's here.

0002

2. Description of the Related Art Next, a conventional resist ashing apparatus will be explained with reference to FIG. Figure 2 is a diagram for explaining a conventional resist ashing device. Figure 2 (a) is a side cross-sectional view schematically showing the main parts of the equipment, and Figure 2 (b) is a side sectional view of a substrate coated with resist. The plan view (c) is a cross-sectional view taken along the line A--A of the substrate coated with a resist. In this specification, the same parts, materials, etc. are given the same reference numerals throughout the drawings.

A conventional resist ashing apparatus is shown in FIG.
As shown in FIG. 1, a processing tank 10 and a heating means, for example, a heater 11a, on which a substrate 31 disposed in the processing tank 10 and coated with a resist 32 is placed horizontally, are connected to a thick plate made of aluminum. 11b, a thermocouple 12 that converts the temperature of the plate 11b into voltage, and a current I that inputs the output of the thermocouple 12 and supplies it to the heater 11a of the hot plate 11.
A mixed gas 33 consisting of oxygen and ozone supplied from a temperature adjusting device 13 that adjusts the temperature of the plate 11b by changing the current value of
0 and a shower head 14 that emits water in the form of a shower.

A method for decomposing and removing the organic resist 32 deposited on the substrate 31 using the resist ashing apparatus having the above-mentioned structure will be explained in the order of steps. First, the substrate 10 is placed horizontally on the plate 11b of the hot plate 11 disposed in the processing tank 10, and an exhaust device (not shown) connected to the exhaust pipe 10a communicating with the processing tank 10 is activated. The inside of the processing tank 10 is evacuated. Next, temperature adjustment device 13
and thermocouple 12 to connect plate 1 of hot plate 11.
1b, and the entire substrate 31 has a temperature of 250 to 3
The temperature should be around 00℃. Thereafter, when the mixed gas 33 is continuously ejected from the shower head 14 into the processing tank 10, the ozone, which has a strong oxidizing power due to this heating, continuously damages the resist 32 adhered to the substrate 31. It will be disassembled and removed.

[0005] Since the exhaust device continuously exhausts the inside of the processing tank 10, products generated by decomposition of the resist 32, such as carbon dioxide gas, are discharged to the outside of the processing tank 10 together with the mixed gas 33. becomes.

[0006]

[Problem to be Solved by the Invention] If the thickness of the resist 32 deposited on the substrate 31 is uniform, the resist 32 deposited on any surface area of the substrate 31 will be decomposed and removed in approximately the same amount of time. . However, when the resist 32 is applied to a rectangular (including square) substrate 31 by a spin coating method, the substrate 31 is coated as shown in FIGS. 2(b) and 2(c).
The film thickness of the resist 32 deposited on the corner portion 31b of
It is known from experience that the thickness of the film is greater than that of the central portion 31a of the substrate 31.

Therefore, when the resist 32 adhered to the substrate 31 in such a state is decomposed and removed by the resist ashing device using the method described above, the central portion 3 of the substrate 31 is removed.
The resist 32 deposited on the corner portion 1a is removed faster than the resist 32 deposited on the corner portion 31b. For this reason, if a wiring pattern, for example a wiring pattern (not shown) formed of metal such as aluminum or chromium, is provided in the center portion 31a of the substrate 31, this wiring pattern will be exposed to ozone, which has strong oxidizing power. There was a problem in that it was exposed and etched.

The present invention has been made to solve these problems, and its purpose is to heat any region of a substrate coated with a resist at any temperature to create a film with different thicknesses. An object of the present invention is to provide a resist ashing device capable of removing resist almost simultaneously.

[0009]

[Means for Solving the Problems] As shown in FIG. 1, the resist ashing is provided with a heating means 21 for heating the substrate 31 when the resist 32 adhered to the substrate 31 is decomposed and removed. This is achieved by a resist ashing apparatus characterized in that the heating means 21 is composed of a plurality of heating means whose temperatures are controlled independently, and can heat any region of the substrate 31 at any temperature.

0010

[Operation] As shown in FIG. 1, the resist ashing apparatus of the present invention is equipped with heating means capable of heating any region of the substrate at any temperature. It is known that the rate of decomposition of the organic resist 32 due to the oxidizing action of ozone depends on the temperature of the resist 32, and increases as the temperature of the resist 32 increases. Therefore, a certain area of the substrate 31 on which the resist 32 is thickly coated by the heating means 21, for example, as shown in FIG.
By making the temperature of the corner portion 31b of the substrate 31 higher than the temperature of the center portion 31a of the substrate 31, the resist 32 adhered to the corner portion 31b and the center portion 3
The resist 32 deposited on 1a will be removed at approximately the same time.

[0011] Thus, the resist ashing apparatus of the present invention has the following features:
Even if a wiring pattern made of metal such as aluminum or chromium is provided in the center 31a of the substrate 31, the resist 32 can be removed without etching the wiring pattern.
can be disassembled and removed.

0012

DESCRIPTION OF THE PREFERRED EMBODIMENTS A resist ashing apparatus according to an embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a diagram for explaining a resist ashing device according to an embodiment of the present invention, in which FIG. 1(a) is a side sectional view schematically showing the main parts of the device, and FIG. A plan view of the multi-heater type hot plate. FIG. 2(c) is a plan view of the multi-heater type hot plate with a substrate placed thereon.

A resist ashing apparatus according to an embodiment of the present invention includes:
As shown in FIGS. 1(a) to 1(c), a hot plate 11 of the conventional resist ashing apparatus explained with reference to FIG.
is a multi-heater type in which a heating means, that is, a ring heater 21a consisting of a small-diameter ring heater 21a1, a medium-diameter ring heater 21a2, and a large-diameter ring heater 21a3, which are annular with different diameters, is embedded in a thick aluminum plate 21b. Changed to hot plate 21,
In addition, a conventional single thermocouple 12 is used, and contact points are scattered at the center, outside, and boundary area between the center and outside of the plate 21b of the multi-heater type hot plate 21 to provide a multi-point temperature adjustment device. Three thermocouples 22a, 22 connected to 23
b, 22c, and the conventional temperature adjustment device 13 was replaced with the ring heater 2 of the multi-heater type hot plate 21.
The configuration is changed to a multi-point temperature adjustment device 23 that independently supplies currents I1, I2, and I3 to 1a1, 21a2, and 21a3.

Therefore, by using the resist ashing apparatus according to the embodiment of the present invention, the resist 32 of the substrate 31 placed on the plate 21b of the multi-heater type hot plate 21 as shown in FIG. Board 31
As shown in FIGS. 2(b) and 2(c), the resist 32 coated on the corner portion 31b of the substrate 31 is thicker than the thickness of the resist 32 deposited on the center portion 31a of the substrate 31, as shown in FIGS. In order to almost simultaneously decompose and remove the deposited resist 32 (which has a thick film thickness) using the mixed gas 33 consisting of ozone and oxygen blown into the processing tank 10 from the shower head 14, a multi-heater type hot plate is used. 2
The current values of the currents I1, I2, and I3 flowing through the ring heaters 21a1, 21a2, and 21a3 are measured by the thermocouple 22.
a, 22b, 22c and a multi-point temperature adjustment device 23 to make the temperature of the outer part of the plate 21b of the multi-heater type hot plate 21 higher than the temperature of the central part of the plate 21b.

In such a state, the temperature of the corner portion 31b of the substrate 31 becomes higher than the temperature of the center portion 31a of the substrate 31. Therefore, the corner portion 31 of the board 31
b The vaporization rate of the resist 32 at the center part 3 of the substrate 31 is
Since the vaporization rate is faster than that of the resist 32 in FIG. 1a, the resist 32 deposited on the substrate 31 is decomposed and removed almost simultaneously. In this way, the resist ashing apparatus according to one embodiment of the present invention can remove the resist 32 without oxidizing the wiring pattern even if a wiring pattern formed of metal such as aluminum or chromium is provided in the central portion 31a of the substrate 31. can be disassembled and removed.

[0016]

As explained above, the resist ashing apparatus of the present invention can remove resists deposited on a substrate with different thicknesses almost simultaneously. Therefore, by employing the resist ashing apparatus of the present invention, it is possible to prevent wiring patterns formed on a substrate from being oxidized, and the quality of reticles, masks, etc. can be improved.

[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining a resist ashing apparatus according to an embodiment of the present invention;

FIG. 2 is a diagram for explaining a conventional resist ashing device.

[Explanation of symbols]

10 is a processing tank, 10a is an exhaust pipe, 11 is a heating means (hot plate), 11a is a heater, 11b is a plate, 12 is a thermocouple, 13 is a temperature adjustment device, 14 is a shower Head, 21 is heating means (multi-heater type hot plate)
, 21a is a ring heater consisting of a small-diameter ring heater 21a1, a medium-diameter ring heater 21a2, and a large-diameter ring heater 21a3, 21b is a plate, 22a, 22b, and 22c are thermocouples, and 23 is a multipoint temperature adjustment device. .

Claims (1)

[Claims] [Claim 1] A resist (3) adhered to a substrate (31).
2) in a resist ashing apparatus equipped with a heating means (21) for heating the substrate (31) when decomposing and removing the
A resist ashing apparatus characterized in that the heating means (21) is composed of a plurality of heating means each having a temperature controlled independently, and can heat any region of the substrate (31) at any temperature.