JPH04243111A - Metallized film capacitor - Google Patents

Abstract

PURPOSE:To eliminate the defects of a metallized film capacitor applied to an electronic or electric apparatus, which are caused by work burrs and deposited metal residue produced when a non-metallized part is formed and provide the metallized film capacitor which is small in size, has high insulating properties and is manufactured with a high yield. CONSTITUTION:A non-metallized part 8 is formed on a metallized film 1 by removing the continuous belt-shaped part of a metallized part 2 by a laser beam or a light beam and the non-metallized part 8 is so formed as to have a chain-shape.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to metallized film capacitors used in electronic and electrical equipment, and more particularly to metallized film capacitors using thin films.

0002

[Background Art] In recent years, efforts have been made to diversify and miniaturize electronic and electrical equipment, and the electronic components used in these devices are also required to be smaller and cost-reduced.
These demands are also strong for film capacitors.

[0003] Particularly, in metallized film capacitors, miniaturization is achieved by making the organic film thinner and by forming a narrow non-metalized part (hereinafter referred to as margin) using microfabrication technology using laser light or light beam. Electrode area is expanding.

A conventional metallized film capacitor will be explained below based on the drawings. 4 to 6 show the structure of conventional metallized film capacitors. In the figures, 1 is 2.5 μm polyethylene terephthalate (
(hereinafter referred to as PET) metallized film, 2 is a metallized part,
3 is a margin which is a non-metalized part, 4 is a boundary line, 5 is a protruding vapor deposited metal, 6 is a vapor deposited metal scrap, and 7 is an external electrode.

As shown in FIG. 4, when a film with a thickness of several μm is used, the metallized portion 2 of the metallized film 1 is continuously irradiated with a laser beam or a light beam to form a linear margin 3. . Next, as shown in FIG. 5, a plurality of metallized films 1 were laminated, heat and pressure were applied, and external electrodes 7 were formed at both ends, thereby obtaining the metallized film capacitor shown in FIG.

[0006]

[Problems to be Solved by the Invention] However, in the metallized film capacitor manufactured by the above-mentioned conventional process, when the margin 3 is formed on the metallized film 1 by the thermal energy of a laser beam or a light beam, the metallized film 1 instantly becomes liquid phase. The deposited metal aggregates and solidifies on the boundary line 4 between the margin 3 and the metallized portion 2 due to its surface tension and thermal stress, and becomes a protruding deposited metal (hereinafter referred to as processing burr) 5. A problem has arisen in that the vapor-deposited metal scum 6 is scattered around. Therefore, when this metallized film 1 is laminated as shown in Fig. 5 and heat and pressure are applied to bond the layers to form a laminated capacitor, processing burrs 5 and scattered vapor-deposited metal scum 6 may damage the film. , causing insulation breakdown. As a countermeasure, methods such as limiting the size of machining burrs or removing them have been considered, as in Japanese Patent Application No. 1-216706 and Japanese Patent Application No. 1-236153, but sufficient effects have not been obtained. .

[0007] The present invention solves the above problems,
The object of the present invention is to provide a metallized film capacitor that is compact and has high insulation properties.

[0008]

[Means for Solving the Problems] In order to achieve the above object, the metallized film capacitor of the present invention comprises a metallized film and a metal deposited on the metallized film by a laser beam or a light beam, which is continuously formed into a strip. It has a chain-like processed shape with a non-metalized processed portion removed at the minimum processing width of 20 to 100 μm.

[0009]

[Function] Therefore, according to the present invention, by forming the non-metallized processed portion in which the vapor deposited metal is continuously removed in a band shape into a chain shape, processing burrs that aggregate and harden on the boundary line between the margin and the metalized portion are removed. Since they are not aligned in a straight line but along a chain-like boundary line, processing burrs are reduced, and the amount of vapor-deposited metal scum scattered around is also reduced.

[0010] Normally, a film capacitor constructed using a thin film of approximately several micrometers is irradiated with pulses when forming a non-metalized part using a laser beam or light beam, but in this case, the processing shape is determined. What is determined is the spot shape of one pulse, the pulse frequency, and the processing speed. By appropriately combining these three materials, a chain-like processed shape can be created. By creating a chain-like processing shape, the area where the processing burrs generated by the previous pulse are irradiated again with the next pulse becomes smaller, and processing burrs and deposited metal scum are almost eliminated. As a result, damage to the film is reduced, voltage resistance characteristics, and productivity are improved.

[0011]

[Embodiment] An embodiment of the present invention is shown in FIG. 4 along with FIGS. 1 to 3.
- Portions that are the same as those in FIG. 6 are given the same reference numerals, detailed explanations are omitted, and differences will be explained.

FIG. 1 is a plan view of essential parts of a metallized film constituting a metalized film capacitor according to an embodiment of the present invention, FIG. 2 is a perspective view of the stacked metallized films shown in FIG. 1, and FIG. FIG. 2 is a sectional view of a main part of a metallized film capacitor.

In the figure, 8 is a chain-shaped margin which is a non-metallic processed portion, A is the processing width at the minimum value of the chain-like margin 8, and B is the processing width at the maximum value. As shown in FIG. 1, a YAG (Nd+) laser beam is applied to a metallized film 1 at a spot shape of approximately a circle with a diameter of 50 μm and a pulse frequency of 2.
．． Continuous irradiation is performed at a processing speed of 1 KHz and a processing speed of 168 mm/sec, and the metallized portion 2 is melted by the thermal energy to form a chain-shaped margin 8. The width of the minimum value point A of the chain-shaped margin 8 is 30 μm. Next, as shown in Figure 2,
The metallized films 1 are laminated so that the chain-like margins 8 are arranged alternately, and pressed with heat of 180° C. and pressure of 2 kg/cm 2 . Thereafter, as shown in FIG. 3, zinc is metal sprayed from both ends to form external electrodes 7. 100 metallized film capacitors made in this manner were produced as samples for this example.

As a comparison sample, a metalized film 1 was similarly irradiated with a substantially circular spot shape of 35 μm, a pulse frequency of 5.6 kHz, and a processing speed of 168 mm/sec to form a linear margin 3. Through the process, 100 metallized film capacitors were prototyped and used as conventional samples. The width of the linear margin 3 was made almost equal to the width of the minimum value point A in this example, but the processed shape of the non-metalized part was chain-like in the sample of this example, whereas
It is almost a straight band shape.

[0015] Table 1 shows the results of a pressure-up breakdown test conducted on 100 samples each of the present example and the conventional example thus manufactured.

[0016]

[Table 1]

As seen in Table 1, the structure of this embodiment greatly improves the yield compared to the conventional example.

As described above, according to the above embodiment, metallization with excellent electrical properties and high productivity can be achieved by appropriately combining the spot shape, pulse frequency, and processing speed to form the processing shape of the margin 8 into a chain shape. Film capacitors can be provided.

[0019] If this chain-like processing width is the minimum value width A and is less than 20 μm on average, a discontinuous non-metalized processing part will be created due to processing burrs 5 and vapor deposited metal scum 6, which will deteriorate the electrical characteristics. Put it away. On the other hand, if the average diameter exceeds 100 μm, the machining burrs 5 and vapor-deposited metal scraps 6 will become large;
Furthermore, thermal damage to the film is also added, resulting in similar deterioration of electrical properties. Therefore, preferably, a chain-like margin 8 having a minimum value width A of 20 to 100 μm is most suitable.

Furthermore, if the ratio A/B between the minimum value point A and the maximum value point B of the chain-like machining width of the chain-like margin 8 is less than 0.2, the machining burr 5 or deposited metal scum 6 may cause If the value exceeds 0.8, not only will the processing burr become large, but also the amount of vapor-deposited metal sludge 6 will increase significantly. Therefore, A/B is preferably 0.2 to 0.8.

[0021]

[Effects of the Invention] As is clear from the above embodiments, the present invention comprises a metallized film and a non-metalized portion in which vapor-deposited metal is continuously removed in a band shape on the metallized film using a laser beam or a light beam. It is possible to provide a metallized film capacitor with excellent electrical properties and high productivity by forming the processing width of the non-metalized part into a chain-like processing shape of 20 to 100 μm at the minimum value point. The effects are very large.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a metallized film in one embodiment of the present invention.

[Fig. 2] A perspective view showing a state in which multiple metalized films are laminated in one embodiment.

[Figure 3] Cross-sectional view of essential parts of the metallized film capacitor in this example

[Figure 4] Plan view of conventional metallized film

[Fig. 5] A perspective view showing a state in which multiple metalized films are laminated in a conventional example.

[Figure 6] Cross-sectional view of main parts of a conventional metallized film capacitor

[Explanation of symbols]

1 Metallized film 2 Metallized part

Claims (3)

[Claims] Claim 1: Consisting of a metallized film and a non-metalized part on which the metallized part is continuously removed in a band shape using a laser beam or a light beam, the non-metalized part is A metallized film capacitor with a chain-like processed shape. 2. The metallized film capacitor according to claim 1, wherein the chain-like processing width of the non-metalized portion is 20 to 100 μm at the minimum value. 3. The method according to claim 1, wherein A/B is 0.2 to 0.8, where A is the minimum value of the chain-like processing width of the non-metalized part and B is the maximum value. Metallized film capacitor.