JPH04239038A - Silicon dioxide coated body and its production - Google Patents
Silicon dioxide coated body and its productionInfo
- Publication number
- JPH04239038A JPH04239038A JP3013034A JP1303491A JPH04239038A JP H04239038 A JPH04239038 A JP H04239038A JP 3013034 A JP3013034 A JP 3013034A JP 1303491 A JP1303491 A JP 1303491A JP H04239038 A JPH04239038 A JP H04239038A
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- layer
- group
- silicon
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 230
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 109
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000576 coating method Methods 0.000 claims abstract description 63
- 239000011248 coating agent Substances 0.000 claims abstract description 60
- 239000002253 acid Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 14
- 239000008119 colloidal silica Substances 0.000 claims abstract description 9
- 150000001282 organosilanes Chemical class 0.000 claims abstract description 7
- 239000007864 aqueous solution Substances 0.000 claims description 35
- 239000000243 solution Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- 229920003023 plastic Polymers 0.000 claims description 21
- 239000004033 plastic Substances 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- -1 methacryloxy group Chemical group 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 108010009736 Protein Hydrolysates Proteins 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000005083 alkoxyalkoxy group Chemical group 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 125000003700 epoxy group Chemical group 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 2
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 claims 1
- 238000010137 moulding (plastic) Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 112
- 229920000515 polycarbonate Polymers 0.000 description 35
- 239000004417 polycarbonate Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 26
- 238000001556 precipitation Methods 0.000 description 18
- 239000007788 liquid Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000012295 chemical reaction liquid Substances 0.000 description 7
- 229920000298 Cellophane Polymers 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000007602 hot air drying Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920006289 polycarbonate film Polymers 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- NGKNMHFWZMHABQ-UHFFFAOYSA-N 4-chloro-2h-benzotriazole Chemical compound ClC1=CC=CC2=NNN=C12 NGKNMHFWZMHABQ-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、プラスチック成形体、
金属板などの基体の表面硬度、耐候性、耐薬品性などの
表面状態を改善する方法、または、プラスチック成形体
などの吸水性、ガス透過性を抑制する方法に関し、特に
プラスチック成形体その他の基体表面に耐久性に優れた
二酸化珪素被膜を形成する方法に関する。[Industrial Application Field] The present invention relates to a plastic molded article,
Regarding methods for improving surface conditions such as surface hardness, weather resistance, and chemical resistance of substrates such as metal plates, or methods for suppressing water absorption and gas permeability of plastic moldings, etc., especially for plastic moldings and other substrates. The present invention relates to a method for forming a highly durable silicon dioxide film on a surface.
【0002】0002
【従来の技術】近年、二酸化珪素成膜方法として、■低
温成膜が可能である■真空系を必要としないため成膜コ
ストが安価である■大面積、大量成膜が可能である等の
利点から二酸化珪素の過飽和状態の珪弗化水素酸水溶液
と基材を接触させて基材表面に二酸化珪素を形成する方
法(以後、「析出法」と略称する)が注目されている(
例えば、特開昭60−33233、特開昭62−208
76)。[Prior Art] In recent years, silicon dioxide film deposition methods have been developed with the following advantages: 1. Low-temperature deposition is possible. 2. Deposition costs are low because no vacuum system is required. 2. Large-area, large-volume deposition is possible. Due to its advantages, a method of forming silicon dioxide on the surface of a substrate by bringing the substrate into contact with a supersaturated aqueous solution of hydrosilicic fluoric acid (hereinafter referred to as the "precipitation method") is attracting attention (
For example, JP-A-60-33233, JP-A-62-208
76).
【0003】特にプラスチック成形体に析出法によって
二酸化珪素被膜を形成する方法に関しては、プラスチッ
ク成形体に有機珪素化合物、それらの加水分解物を被覆
硬化させて第1次被膜とした後、析出法で第1次被膜上
に二酸化珪素被膜を形成させる方法が知られている(例
えば、特開昭61−12734)。In particular, regarding the method of forming a silicon dioxide film on a plastic molded body by a precipitation method, the plastic molded body is coated with organic silicon compounds and their hydrolysates and cured to form a primary film, and then the silicon dioxide film is formed by a precipitation method. A method of forming a silicon dioxide film on a primary film is known (for example, JP-A-61-12734).
【0004】0004
【発明が解決しようとする課題】通常、未処理のプラス
チック表面に析出法によって二酸化珪素被膜形成を試み
ても、二酸化珪素は膜状には得られず、粒子が表面に付
着した状態となって現れる。これは、プラスチック表面
に珪弗化水素酸水溶液中の珪素化学種との反応の拠点が
ないためであると推察される。特開昭61−12734
に記載されている第1次被膜は、珪弗化水素酸水溶液中
の珪素化学種との反応の拠点を提供しているため、予め
プラスチック成形体を該第1次被膜で覆っておくことに
より析出法によって二酸化珪素を膜状に得ることが可能
となった。[Problem to be Solved by the Invention] Normally, even if attempts are made to form a silicon dioxide film on an untreated plastic surface by a precipitation method, silicon dioxide is not obtained in the form of a film, but particles are attached to the surface. appear. This is presumed to be because there is no site on the plastic surface for reaction with the silicon species in the hydrosilicofluoric acid aqueous solution. Japanese Patent Publication No. 61-12734
The primary coating described in 2. provides a base for reaction with the silicon species in the aqueous solution of hydrosilicofluoric acid, so by covering the plastic molded article with the primary coating in advance, It has become possible to obtain silicon dioxide in the form of a film using the precipitation method.
【0005】しかし、析出法によって得られる二酸化珪
素被膜の膜質を向上するために析出法の条件(成膜温度
、珪弗化水素酸濃度)を変更すると、予めプラスチック
表面上に該第1次被膜を形成しておいても析出法の条件
によっては、二酸化珪素被膜が得られなかったり、得ら
れても白濁するなどの問題点があった。However, if the conditions of the precipitation method (film-forming temperature, hydrosilicofluoric acid concentration) are changed in order to improve the film quality of the silicon dioxide film obtained by the precipitation method, the primary film is deposited on the plastic surface in advance. Even if a silicon dioxide film is formed, depending on the conditions of the precipitation method, a silicon dioxide film may not be obtained, or even if it is obtained, it becomes cloudy.
【0006】本発明は、上記従来の問題点を解決し、プ
ラスチック成形体その他の基体を、耐久性に優れた均一
厚さの二酸化珪素被膜で覆った被覆体およびその製造方
法を提供することを目的とする。The present invention solves the above-mentioned conventional problems and provides a coating in which a plastic molded article or other substrate is covered with a highly durable and uniformly thick silicon dioxide coating, and a method for manufacturing the same. purpose.
【0007】[0007]
【課題を解決するための手段】本発明は、a)基体、
b)オルガノシラン、それらの加水分解物、およびコロ
イダルシリカからなる群より選ばれた少なくとも1種の
珪素化合物を被覆硬化させてなる層、
c)二酸化珪素が過飽和状態にある所定の珪素濃度の珪
弗化水素酸水溶液(イ)を前記b)層に接触させて形成
させた二酸化珪素被膜の層、及び
d)二酸化珪素が過飽和状態にあり、かつ前記珪弗化水
素酸水溶液(イ)の珪素濃度よりも高い珪素濃度を有す
る珪弗化水素酸水溶液(ロ)を前記c)層に接触させて
形成させた二酸化珪素被膜の層、をa)、b)、c)お
よびd)の順に積層してなる二酸化珪素被覆体を要旨と
するものである。[Means for Solving the Problems] The present invention provides a substrate formed by coating and curing at least one silicon compound selected from the group consisting of a) a substrate, b) organosilanes, their hydrolysates, and colloidal silica. c) a layer of a silicon dioxide coating formed by contacting the b) layer with an aqueous solution of hydrosilicofluoric acid (a) having a predetermined silicon concentration in which silicon dioxide is supersaturated; and d) a silicon dioxide coating layer in which silicon dioxide is supersaturated. of a silicon dioxide coating formed by contacting the layer c) with an aqueous silicofluoric acid solution (b) which is in a state of The gist is a silicon dioxide coated body formed by laminating layers a), b), c) and d) in this order.
【0008】以下に本発明を詳細に説明する。本発明に
使用される基体としては、プラスチック成形体、金属板
などが用いられるが、プラスチック成形体としては、特
に限定されないが、例えば、ポリ塩化ビニル、ポリスチ
レン、ポリカーボネート、ポリメチルメタクリレート、
ポリアミド、ポリアセタール、ポリブチレンテレフタレ
ート、ポリエチレン、ポリプロピレン、芳香族ポリエス
テル、ポリエーテルケトン、ポリイミド、ポリアクリロ
ニトリル、ポリフェニレンスルフィド、ポリフェニレン
オキサイド、ポリスルフォン等に代表される熱可塑性樹
脂、エラストマー、およびそれらのポリマーブレンドか
らなる成形体、ポリジエチレングリコールビスアリルカ
ーボネート、フェノール樹脂等に代表される熱硬化性樹
脂成形体である。成形体の形状、大きさは任意である。The present invention will be explained in detail below. The substrate used in the present invention may be a plastic molded body, a metal plate, etc., but examples of the plastic molded body include, but are not limited to, polyvinyl chloride, polystyrene, polycarbonate, polymethyl methacrylate,
From thermoplastic resins, elastomers, and polymer blends thereof, such as polyamide, polyacetal, polybutylene terephthalate, polyethylene, polypropylene, aromatic polyester, polyether ketone, polyimide, polyacrylonitrile, polyphenylene sulfide, polyphenylene oxide, polysulfone, etc. It is a thermosetting resin molded body represented by polydiethylene glycol bisallyl carbonate, phenol resin, etc. The shape and size of the molded body are arbitrary.
【0009】本発明において、b)層の形成に用いられ
る、オルガノシランとしては代表的には、一般式(1)
で示される珪素化合物を挙げることができ、例として、
ジメチルジメトキシシラン、メチルトリメトキシシラン
、テトラエトキシシラン、フェニルトリメトキシシラン
、フェニルメチルジメトキシシラン、ビニルトリエトキ
シシラン、ビニルトリス(β−メトキシエトキシ)シラ
ン、ビニルトリアセトキシシラン、γ−メタクリロキシ
プロピルトリメトキシシラン、γ−アミノプロピルトリ
エトキシシラン、N−(β−アミノエチル)−γ−アミ
ノプロピルトリメトキシシラン、N−(β−アミノエチ
ル)−γ−アミノプロピル(メチル)ジメトキシシラン
、N−ビス(β−ヒドロキシエチル)−γ−アミノプロ
ピルトリエトキシシラン、γ−クロロプロピルトリメト
キシシラン、γ−メルカプトプロピルトリメトキシシラ
ン、γ−グリシドキシプロピルトリメトキシシラン、β
−(3,4−エポキシシクロヘキシル)エチルトリメト
キシシラン、3,3,3−トリフルオロプロピルトリメ
トキシシラン、メチルトリクロロシラン、ジメチルジク
ロロシラン等がその代表例としてあげられる。また、こ
れら一般式(1)で示される珪素化合物の加水分解物と
は、該珪素化合物中のアルコキシ基、アルコキシアルコ
キシ基、アシルオキシ基、塩素元素の一部または全部が
水酸基に置換されたもの、および置換された水酸基同志
が一部自然に縮合したものを含んでいる。これらの加水
分解物は、例えば水およびアルコールのような混合溶媒
中で酸の存在下で加水分解することによって得ることが
できる。In the present invention, the organosilane used for forming layer b) is typically represented by the general formula (1).
Examples include silicon compounds represented by
Dimethyldimethoxysilane, methyltrimethoxysilane, tetraethoxysilane, phenyltrimethoxysilane, phenylmethyldimethoxysilane, vinyltriethoxysilane, vinyltris(β-methoxyethoxy)silane, vinyltriacetoxysilane, γ-methacryloxypropyltrimethoxysilane , γ-aminopropyltriethoxysilane, N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-γ-aminopropyl(methyl)dimethoxysilane, N-bis(β-aminoethyl)-γ-aminopropyl(methyl)dimethoxysilane, -hydroxyethyl)-γ-aminopropyltriethoxysilane, γ-chloropropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, β
Typical examples include -(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3,3,3-trifluoropropyltrimethoxysilane, methyltrichlorosilane, and dimethyldichlorosilane. In addition, the hydrolyzate of the silicon compound represented by the general formula (1) refers to a silicon compound in which a part or all of the alkoxy group, alkoxyalkoxy group, acyloxy group, or chlorine element is substituted with a hydroxyl group, and some naturally condensed substituted hydroxyl groups. These hydrolysates can be obtained, for example, by hydrolysis in a mixed solvent such as water and alcohol in the presence of an acid.
【0010】また、コロイダルシリカとは、粒径1〜1
00ミリミクロンのシリカの超微粒子を水またはアルコ
ール系分散媒に分散せしめたゾルまたはこのゾルから分
散媒を除去した乾燥粉末であり、通常市販されているも
のが使用可能である。本発明において、オルガノシラン
、それらの加水分解物、およびコロイダルシリカからな
る群より選ばれた少なくとも1種の珪素化合物を用いて
プラスチック成形体その他の基体にb)層を形成するが
、その形成方法は、塗料として塗布した後に熱、紫外線
、電子線などを用いて乾燥させる湿式法、真空蒸着、イ
オンプレーティング、スパッタリング、プラズマ重合等
の乾式法のいずれであってもかまわないが、大型、任意
形状のプラスチック成形体に被膜を形成するためには前
記湿式法が好ましい。[0010] Colloidal silica also refers to particles with a particle size of 1 to 1
It is a sol prepared by dispersing ultrafine silica particles of 0.00 mm in diameter in water or an alcohol-based dispersion medium, or a dry powder obtained by removing the dispersion medium from this sol, and commercially available products can be used. In the present invention, layer b) is formed on a plastic molded body or other substrate using at least one silicon compound selected from the group consisting of organosilanes, their hydrolysates, and colloidal silica, and the method for forming the layer b) may be a wet method in which it is applied as a paint and then dried using heat, ultraviolet rays, or electron beams, or a dry method such as vacuum evaporation, ion plating, sputtering, or plasma polymerization; The wet method is preferable for forming a film on a shaped plastic molded body.
【0011】形成されるb)層の厚さは、特に限定され
ないが、通常0.1〜10μmの範囲が好ましい。この
被覆層の厚さが過小であると、その後の析出法によって
得られる二酸化珪素被膜の付着力が低下する傾向が現れ
るため適当ではない。逆に過大であると、不経済である
。ただし、ポリカーボネート基体にはアミノ基を有する
珪素化合物、ポリメチルメタクリレート基体にはメタク
リロキシ基を有する珪素化合物を使用した場合には、b
)層が数nm〜0.1μm程度の薄いものでもその後の
析出法によって得られる二酸化珪素被膜の付着力は強固
である。なお、基体がプラスチック成形体である場合、
これとb)層の付着力をさらに向上するために、b)を
形成する前に、予めコロナ放電処理、プラズマ処理、紫
外線照射等によってプラスチック基体表面を改質したり
、予め樹脂プライマー層を形成しておいてもよい。The thickness of the layer b) to be formed is not particularly limited, but is usually preferably in the range of 0.1 to 10 μm. If the thickness of this coating layer is too small, the adhesion of the silicon dioxide film obtained by the subsequent precipitation method tends to decrease, which is not appropriate. On the other hand, if it is excessive, it is uneconomical. However, if a silicon compound having an amino group is used for the polycarbonate base, and a silicon compound having a methacryloxy group is used for the polymethyl methacrylate base, b
) Even if the layer is as thin as several nanometers to 0.1 μm, the adhesion of the silicon dioxide film obtained by the subsequent precipitation method is strong. In addition, if the base is a plastic molded body,
In order to further improve the adhesion of layer b), before forming b), the plastic substrate surface is modified by corona discharge treatment, plasma treatment, ultraviolet irradiation, etc., or a resin primer layer is formed in advance. You can leave it as is.
【0012】以上のようにしてb)層を形成したプラス
チック成形体その他の基体を、次いで、二酸化珪素の過
飽和状態の珪弗化水素酸水溶液(イ)及び(ロ)と接触
させて、b)層上に二酸化珪素被膜を形成する。一般に
、得られる二酸化珪素被膜の緻密性、屈折率などの特性
は、珪弗化水素酸の濃度や温度に大きく左右される。
通常、珪弗化水素酸の濃度が濃いほど、また、成膜温度
即ち珪弗化水素酸水溶液の温度が高いほど、緻密な二酸
化珪素被膜が得られる。The plastic molded article or other substrate on which the layer b) has been formed as described above is then brought into contact with supersaturated aqueous solutions of hydrosilicofluoric acid (a) and (b) of silicon dioxide, and b) A silicon dioxide coating is formed over the layer. Generally, properties such as density and refractive index of the silicon dioxide film obtained are greatly influenced by the concentration of hydrosilicofluoric acid and temperature. Generally, the higher the concentration of hydrosilicic fluoric acid and the higher the film formation temperature, that is, the temperature of the aqueous solution of hydrosilicic fluoric acid, the denser the silicon dioxide coating can be obtained.
【0013】しかし、b)層を形成した基体に緻密な二
酸化珪素被膜を得るために、高濃度の珪弗化水素酸水溶
液を使用したり、高温で成膜を試みると、■b)層が珪
弗化水素酸水溶液に溶解して、二酸化珪素被膜が得られ
ない■二酸化珪素被膜が得られても、厚みが不均一で白
濁したムラの多いものである等の問題がある。However, in order to obtain a dense silicon dioxide film on the substrate on which layer (b) has been formed, if a highly concentrated aqueous solution of hydrosilicofluoric acid is used or film formation is attempted at high temperature, the layer (b) A silicon dioxide coating cannot be obtained by dissolving in an aqueous solution of hydrosilicofluoric acid. (2) Even if a silicon dioxide coating is obtained, there are problems such as uneven thickness, cloudy, and uneven thickness.
【0014】本発明においては、b)層を形成した基体
に、まず、所定の珪素濃度、好ましくは2.0モル/リ
ットル以下の珪素濃度の珪弗化水素酸水溶液(イ)を接
触させて二酸化珪素被膜(c)層)を形成した後、前記
珪弗化水素酸水溶液(イ)の珪素濃度よりも高い珪素濃
度、好ましくは珪素濃度2.5モル/リットル以上の珪
素濃度の珪弗化水素酸水溶液(ロ)に接触させて透明で
均一な二酸化珪素被膜(d)層)を得る。珪弗化水素酸
水溶液(ロ)の珪素濃度は珪弗化水素酸水溶液(イ)の
珪素濃度よりも0.6〜2.5モル/リットル高いこと
が好ましい。In the present invention, the substrate on which the layer b) is formed is first brought into contact with an aqueous solution of hydrosilicofluoric acid (a) having a predetermined silicon concentration, preferably a silicon concentration of 2.0 mol/liter or less. After forming the silicon dioxide coating (layer (c)), the silicon fluoride film is formed to have a silicon concentration higher than that of the hydrosilicofluoric acid aqueous solution (a), preferably a silicon concentration of 2.5 mol/liter or more. A transparent and uniform silicon dioxide coating (layer d) is obtained by contacting with an aqueous hydrogen acid solution (b). The silicon concentration of the hydrosilicofluoric acid aqueous solution (b) is preferably 0.6 to 2.5 mol/liter higher than the silicon concentration of the hydrosilicofluoric acid aqueous solution (a).
【0015】珪弗化水素酸水溶液(イ)の接触は30℃
以下の液温でおこなうことが好ましく、通常は15〜3
0℃の液温で10分〜200分接触させる。c)層の膜
厚は、通常は10〜50nm、例えば20nm、であれ
ば、その上に均一なd)層を被覆することができる。前
記珪弗化水素酸水溶液(イ)の接触温度をT1℃とすれ
ば、珪弗化水素酸水溶液(ロ)の接触は(T1℃+5℃
)以上の温度、特に25℃以上の液温でおこなうことが
好ましく、通常は30〜50℃の液温で30分〜300
分接触させる。d)層の好ましい膜厚は、50〜300
nmである。珪弗化水素酸水溶液の接触は上記の2回に
限らず、3回以上おこなってもよい。このときはこの液
として順次珪素濃度が高くなるようにし、最初の液の珪
素濃度を上記(イ)の値とし、最後の液の珪素濃度を上
記(ロ)の値とすることが好ましい。[0015] Contact with the hydrosilicofluoric acid aqueous solution (a) is carried out at 30°C.
It is preferable to carry out the liquid temperature below, usually 15 to 3
Contact is made for 10 minutes to 200 minutes at a liquid temperature of 0°C. If the thickness of the layer c) is usually 10 to 50 nm, for example 20 nm, then a uniform layer d) can be coated thereon. If the contact temperature of the hydrosilicofluoric acid aqueous solution (a) is T1℃, the contact temperature of the hydrosilicofluoric acid aqueous solution (b) is (T1℃+5℃
) or higher, particularly at a liquid temperature of 25°C or higher, and usually at a liquid temperature of 30 to 50°C for 30 minutes to 300 minutes.
contact for minutes. d) The preferred thickness of the layer is 50 to 300
It is nm. The contact with the hydrosilicofluoric acid aqueous solution is not limited to the above two times, but may be performed three or more times. In this case, it is preferable that the silicon concentration of the liquid be increased in sequence, with the silicon concentration of the first liquid being the value of (a) above, and the silicon concentration of the last liquid being the value of (b) above.
【0016】本発明において使用した二酸化珪素被膜製
造装置の系統図を第1図に示す。第1図において、浸漬
槽は外槽1と内槽2からなり、内槽1と外槽2の間には
水3が満たしてある。この水は一定温度になるようにヒ
ーター4で加熱されかつ温度分布均一化のため攪拌機5
で攪拌されている。FIG. 1 shows a system diagram of the silicon dioxide coating manufacturing apparatus used in the present invention. In FIG. 1, the immersion tank consists of an outer tank 1 and an inner tank 2, and the space between the inner tank 1 and the outer tank 2 is filled with water 3. This water is heated with a heater 4 to maintain a constant temperature, and is heated with a stirrer 5 to make the temperature distribution uniform.
is being stirred.
【0017】内槽2は前部6、中部7、後部8からなり
、各部には、工業用シリカゲル粉末を二酸化珪素の供給
源として二酸化珪素を溶解飽和させた所定濃度の珪弗化
水素酸水溶液6.5リットルが満たしてある。ここで、
三方コック13a、13a’、13b、13b’を調節
し、循環ポンプ12aを作動させ内槽後部8の反応液を
一定量づつくみ出してフィルター11aで濾過し内槽6
へ戻す処理液循環を開始する。 ここで、フィルター
11aのメッシュは1.5μmであり、反応液循環流量
を520cc/分(反応液全量が6.5リットルである
ので循環流量は約8%/分である)と設定する。The inner tank 2 consists of a front part 6, a middle part 7, and a rear part 8, and each part is filled with an aqueous solution of hydrosilicofluoric acid of a predetermined concentration in which silicon dioxide is dissolved and saturated using industrial silica gel powder as a source of silicon dioxide. It is filled with 6.5 liters. here,
The three-way cocks 13a, 13a', 13b, and 13b' are adjusted, and the circulation pump 12a is operated to pump out a certain amount of the reaction liquid from the rear part 8 of the inner tank, filter it with the filter 11a, and then transfer it to the inner tank 6.
Start circulating the processing liquid back to the Here, the mesh of the filter 11a is 1.5 μm, and the reaction liquid circulation flow rate is set to 520 cc/min (since the total amount of reaction liquid is 6.5 liters, the circulation flow rate is about 8%/min).
【0018】その後、縦50mm、横50mm、厚さ3
mmのアルミ板15を3枚、内槽後部8に浸漬し攪拌機
16を作動させアルミ板の溶解を促進させる。この状態
で16〜30時間保持することによって反応液は適度の
二酸化珪素飽和度を有する(二酸化珪素成膜可能な)処
理液となる。なお、反応液中の珪素濃度は、反応液をサ
ンプリングし、それを約10時間、10℃以下の温度で
冷却した後、直接プラズマ発光分光法により測定する。[0018] After that, the length is 50 mm, the width is 50 mm, and the thickness is 3.
Three aluminum plates 15 with a diameter of 3 mm are immersed in the rear part 8 of the inner tank, and the stirrer 16 is activated to promote dissolution of the aluminum plates. By maintaining this state for 16 to 30 hours, the reaction solution becomes a processing solution having an appropriate degree of silicon dioxide saturation (capable of forming a silicon dioxide film). The silicon concentration in the reaction solution is measured directly by plasma emission spectroscopy after sampling the reaction solution and cooling it at a temperature of 10° C. or lower for about 10 hours.
【0019】反応液が二酸化珪素成膜能力を有するよう
になると、反応液中でも二酸化珪素が粒子となって発生
し、成長し、やがてフィルター11aで濾過され、フィ
ルターの目詰まりの原因となる。アルミニウム添加後3
0〜50時間経過した時点でこの傾向がみられ循環流量
の低下を招く。そこで、配管及びフィルター11a内の
反応液を内槽2に戻した後、反応液の循環を内槽後部8
、フィルター11b、循環ポンプ12a、内槽前部6の
順となるように三方コック13a、13a’、13b、
13b’を設定し、反応液の循環を再び開始すると、反
応液の循環流量は再び520cc/分に回復する。ここ
で、フィルター11bのメッシュはフィルター11aと
同じく1.5μmである。When the reaction solution has the ability to form a silicon dioxide film, silicon dioxide is generated in the reaction solution as particles, grows, and is eventually filtered by the filter 11a, causing clogging of the filter. After aluminum addition 3
This tendency is observed after 0 to 50 hours have elapsed, leading to a decrease in the circulating flow rate. Therefore, after returning the reaction liquid in the piping and filter 11a to the inner tank 2, the circulation of the reaction liquid is started at the rear part of the inner tank.
, filter 11b, circulation pump 12a, and inner tank front part 6 in this order: three-way cocks 13a, 13a', 13b,
13b' and restarting the circulation of the reaction liquid, the circulation flow rate of the reaction liquid is restored to 520 cc/min. Here, the mesh of the filter 11b is 1.5 μm, same as the filter 11a.
【0020】この状態で循環ポンプ12bを作動させ、
5%弗化水素酸水溶液10が洗浄液槽9、フィルター1
1a、循環ポンプ12a、洗浄液槽9の順で循環するこ
とによって目詰まりしたフィルター11aを洗浄再生す
る。以上の手順に従って、フィルターに目詰まり傾向が
認められた都度三方コック13a、13a’、13b、
13b’を調節してフィルターを切り替える操作を行な
いながら、各種珪素化合物で被覆したプラスチック成形
体を内槽中部7に所定時間浸漬することによって二酸化
珪素被膜を連続して得ることができる。In this state, the circulation pump 12b is operated,
5% hydrofluoric acid aqueous solution 10 is in cleaning liquid tank 9, filter 1
1a, circulation pump 12a, and cleaning liquid tank 9 in this order, the clogged filter 11a is cleaned and regenerated. In accordance with the above procedure, the three-way cocks 13a, 13a', 13b,
A silicon dioxide coating can be continuously obtained by immersing a plastic molded body coated with various silicon compounds in the inner tank middle part 7 for a predetermined time while adjusting the filter 13b' and switching the filter.
【0021】[0021]
【実施例】以下、実施例、比較例を挙げて本発明を詳細
に説明するが、本発明はその要旨を越えない限り、以下
の実施例に限定されるものではない。実施例1、比較例
1まずγ−グリシドキシプロピルトリメトキシシラン
350重量部、水分散コロイダルシリカ(日産化学株式
会社製、商品名スノーテックス−C、固形分20%)
14重量部、蒸留水 9重量部及び1.2規定塩酸水溶
液 3重量部を混合し80℃で4時間還流後、57重量
部の溶媒を溜出温度80〜90℃で溜出した。このよう
にして得られたコロイダルシリカを含むγ−グリシドキ
シプロピルトリメトキシシランの加水分解物溶液 66
重量部にエチルセロソルブ 100重量部及び硬化触媒
、フローコントロール剤を少々添加し塗料とした。この
塗料を、予め洗浄した縦100mm横100mm厚さ1
.1mmのポリジエチレングリコールビスアリルカーボ
ネート(以後CR−39と呼ぶ)平板に浸漬法で塗布し
、120℃の熱風乾燥炉で30分間熱処理した。CR−
39平板上には4μmの厚みのb)層が形成されていた
。EXAMPLES The present invention will be explained in detail below with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples unless it exceeds the gist thereof. Example 1, Comparative Example 1 First, γ-glycidoxypropyltrimethoxysilane
350 parts by weight, water-dispersed colloidal silica (manufactured by Nissan Chemical Co., Ltd., trade name Snowtex-C, solid content 20%)
14 parts by weight, 9 parts by weight of distilled water, and 3 parts by weight of a 1.2N aqueous hydrochloric acid solution were mixed and refluxed at 80°C for 4 hours, and then 57 parts by weight of the solvent was distilled at a distillation temperature of 80 to 90°C. Hydrolyzate solution of γ-glycidoxypropyltrimethoxysilane containing colloidal silica thus obtained 66
A paint was prepared by adding 100 parts by weight of ethyl cellosolve, a curing catalyst, and a small amount of a flow control agent. Apply this paint to a surface of 100 mm long and 100 mm wide that has been cleaned in advance.
.. It was coated on a 1 mm polydiethylene glycol bisallyl carbonate (hereinafter referred to as CR-39) flat plate by a dipping method, and heat-treated in a hot air drying oven at 120°C for 30 minutes. CR-
A layer b) having a thickness of 4 μm was formed on the No. 39 flat plate.
【0022】上記b)層を形成したCR−39平板を第
1図に示した二酸化珪素被膜製造装置の内装中部7に浸
漬後、30分間保持することによって二酸化珪素被膜(
c)層)を作成した。なお、二酸化珪素被膜製造装置内
を循環する珪弗化水素酸水溶液の濃度は1.2モル/リ
ットルであり、ヒーター4を調節して成膜時の温度が3
0℃となるようにした。The CR-39 flat plate on which the above b) layer was formed was immersed in the interior middle part 7 of the silicon dioxide coating production apparatus shown in FIG. 1, and then held for 30 minutes to remove the silicon dioxide coating (
c) layer) was created. The concentration of the hydrosilicofluoric acid aqueous solution circulating in the silicon dioxide coating manufacturing apparatus is 1.2 mol/liter, and the temperature during film formation is adjusted to 3.2 mol/liter by adjusting the heater 4.
The temperature was kept at 0°C.
【0023】以上のようにしてCR−39平板上に透明
均一性に優れた二酸化珪素被膜(c)層)が得られた。
被膜の厚さを調べたところ約30nmであった。上記b
)層及びc)層をこの順に積層したCR−39平板(実
施例1)および、b)層のみ被覆したCR−39平板(
比較例1)を、第1図に示した二酸化珪素被膜製造装置
の内装中部7に浸漬後、60分間保持した。なお、二酸
化珪素被膜製造装置内を循環する珪弗化水素酸水溶液の
濃度は3.2モル/リットルであり、ヒーター4を調節
して成膜時の温度が32℃となるようにした。As described above, a silicon dioxide coating (layer c) having excellent transparency and uniformity was obtained on the CR-39 flat plate. The thickness of the coating was examined and found to be approximately 30 nm. b above
) layer and c) layer laminated in this order (Example 1), and CR-39 flat plate coated with only layer b) (
Comparative Example 1) was immersed in the interior middle part 7 of the silicon dioxide coating manufacturing apparatus shown in FIG. 1, and then held for 60 minutes. The concentration of the hydrosilicofluoric acid aqueous solution circulating in the silicon dioxide coating manufacturing apparatus was 3.2 mol/liter, and the heater 4 was adjusted so that the temperature during film formation was 32°C.
【0024】b)層及びc)層をこの順に積層したCR
−39平板には透明で均一な二酸化珪素被膜(d)層)
が形成されていた。得られたd)層の膜厚を調べたとこ
ろ約70nmであった。即ち、CR−39平板上にはc
)層とd)層を合わせて約100nmの二酸化珪素被膜
が得られたことになる。しかし、b)層のみ被覆したC
R−39平板は、その表面が疎水性であることが、接触
角の測定により確認され、また、電子顕微鏡による破断
面観察では、二酸化珪素被膜( d)層)の形成は認め
られなかった。CR in which layer b) and layer c) are laminated in this order
-39 flat plate has a transparent and uniform silicon dioxide coating (d) layer)
was formed. The thickness of the obtained layer d) was examined and found to be approximately 70 nm. That is, on the CR-39 plate, c
This means that a silicon dioxide coating of about 100 nm was obtained by combining layers ) and d). However, C coated with only layer b)
It was confirmed by measuring the contact angle that the surface of the R-39 flat plate was hydrophobic, and the formation of a silicon dioxide coating (layer d) was not observed when the fracture surface was observed using an electron microscope.
【0025】上記二酸化珪素被膜( c)層プラスd
)層 )は、セロハン粘着テープを貼り付けて引き剥
すテストでは全く剥がれない強固な付着力を有するもの
であった。また、沸騰水中に1時間浸漬したが、付着力
に変化はなかった。[0025] The silicon dioxide coating (c) layer plus d
) Layer ) had a strong adhesive strength that did not peel off at all in a test in which cellophane adhesive tape was attached and peeled off. In addition, even though it was immersed in boiling water for 1 hour, there was no change in adhesive strength.
【0026】実施例2、比較例2
まず以下の手順で下塗液を作成した。始めに、メチルイ
ソブチルケトン 240重量部、メタクリル酸 160
重量部、γ−メタクリロキシプロピルトリメトキシシラ
ン 40重量部の混合物を窒素雰囲気下で75℃に保ち
つつベンゾイルパーオキサイド 0.5重量部をメチル
イソブチルケトン 60重量部に溶かした溶液を2時間
かかって加えた。さらに2時間、同温度に保った後、ベ
ンゾイルパーオキサイド 0.5重量部をメチルイソブ
チルケトン 60重量部に溶かした溶液を1時間かかっ
て加え、75℃での保温を4時間続けた。その後メチル
イソブチルケトン 750重量部、メチルエチルケトン
240重量部、イソプロパノール 630重量部、2
−(2’−ヒドロキシ−ジ−t−ブチルフェニル)−5
−クロロベンゾトリアゾール 20重量部を加えた。こ
の溶液を共重合体溶液1と呼ぶものとする。Example 2, Comparative Example 2 First, an undercoating liquid was prepared according to the following procedure. First, 240 parts by weight of methyl isobutyl ketone, 160 parts by weight of methacrylic acid.
Parts by weight, while maintaining a mixture of 40 parts by weight of γ-methacryloxypropyltrimethoxysilane at 75°C under a nitrogen atmosphere, a solution of 0.5 parts by weight of benzoyl peroxide dissolved in 60 parts by weight of methyl isobutyl ketone was prepared over a period of 2 hours. added. After maintaining the same temperature for an additional 2 hours, a solution of 0.5 parts by weight of benzoyl peroxide dissolved in 60 parts by weight of methyl isobutyl ketone was added over 1 hour, and the mixture was kept at 75°C for 4 hours. Then 750 parts by weight of methyl isobutyl ketone, 240 parts by weight of methyl ethyl ketone, 630 parts by weight of isopropanol, 2
-(2'-hydroxy-di-t-butylphenyl)-5
-20 parts by weight of chlorobenzotriazole was added. This solution will be referred to as copolymer solution 1.
【0027】一方、メチル無水ナジック酸 178重量
部にγ−アミノプロピルトリエトキシシラン 221重
量部を70℃に保ちつつ1時間かかって加え、さらに1
時間保温した後、エタノール 530重量部、イソプロ
パノール 1070重量部を加えた。この溶液をシラン
溶液1と呼ぶものとする。そして共重合体溶液1を10
0重量部とシラン溶液1を10重量部を混合して下塗り
塗料とし、予め洗浄したポリカーボネート基板にこの下
塗り塗料を塗布し、熱風乾燥炉で120℃、30分間加
熱乾燥した。この基板上には5μmの厚みの下塗り層が
形成されていた。On the other hand, 221 parts by weight of γ-aminopropyltriethoxysilane was added to 178 parts by weight of methyl nadic anhydride while maintaining the temperature at 70°C over a period of 1 hour.
After keeping warm for an hour, 530 parts by weight of ethanol and 1070 parts by weight of isopropanol were added. This solution will be referred to as silane solution 1. and 10% copolymer solution 1
0 parts by weight and 10 parts by weight of silane solution 1 were mixed to prepare an undercoat, and this undercoat was applied to a previously washed polycarbonate substrate and dried by heating at 120° C. for 30 minutes in a hot air drying oven. A 5 μm thick undercoat layer was formed on this substrate.
【0028】次に上記下塗り塗料上に塗布するb)層作
成用の上塗り塗料を以下の手順で作成した。まず、γ−
グリシドキシプロピルトリメトキシシラン 80重量部
、メチルトリメトキシシラン 144重量部、コロイ
ダルシリカ(日産化学工業株式会社製、商品名スノーテ
ックス−C、固形分濃度 20%) 71重量部およ
び0.1規定塩酸水溶液 170重量部を混合し、80
〜85℃で2時間還流して加水分解を行った。Next, a top coat for layer b) to be applied on the base coat was prepared in the following manner. First, γ−
Glycidoxypropyltrimethoxysilane 80 parts by weight, methyltrimethoxysilane 144 parts by weight, colloidal silica (manufactured by Nissan Chemical Industries, Ltd., trade name Snowtex-C, solid content concentration 20%) 71 parts by weight and 0.1 normal Mix 170 parts by weight of hydrochloric acid aqueous solution,
Hydrolysis was carried out by refluxing at ~85°C for 2 hours.
【0029】このようにして得られた3元共加水分解物
溶液 410重量部にエチルセロソルブ7 3重量部、
過塩素酸アンモニウム 1.3重量部、フローコントロ
ール剤少々を添加し上塗り塗料とした。このようにして
得られた上塗り塗料を前記下塗り層で被覆されたポリカ
ーボネート上に塗布し熱風乾燥炉で130℃60分間加
熱乾燥し硬化させた。この上塗りの厚みは約5μmであ
り、b)層の合計厚みは10μmであった。To 410 parts by weight of the ternary cohydrolyzate solution thus obtained, 3 parts by weight of ethyl cellosolve 7,
A top coat was prepared by adding 1.3 parts by weight of ammonium perchlorate and a small amount of a flow control agent. The top coat thus obtained was applied onto the polycarbonate coated with the undercoat layer and cured by heating at 130° C. for 60 minutes in a hot air drying oven. The thickness of this topcoat was approximately 5 μm, and the total thickness of layer b) was 10 μm.
【0030】上記二重塗布法を用いてb)層を形成した
ポリカーボネート平板に、析出法によって二酸化珪素被
膜(c)層)形成を試みた。なお、珪弗化水素酸水溶液
の濃度は1.5モル/リットルであり、成膜時の温度が
27℃となるようにして、約50分間処理した。ポリカ
ーボネート平板上には透明均一性に優れた二酸化珪素被
膜(c)層)が得られた。被膜の厚さを調べたところ約
40nmであった。An attempt was made to form a silicon dioxide coating (layer c) by a precipitation method on a polycarbonate flat plate on which layer b) had been formed using the above double coating method. The concentration of the hydrosilicofluoric acid aqueous solution was 1.5 mol/liter, and the film was formed at a temperature of 27° C. for about 50 minutes. A silicon dioxide coating (layer c) with excellent transparency and uniformity was obtained on the polycarbonate flat plate. The thickness of the coating was examined and found to be approximately 40 nm.
【0031】上記b)層、c)層をこの順に積層したポ
リカーボネート平板(実施例2)および、c)層の形成
を行わなかったポリカーボネート平板(比較例2)を、
第1図に示した二酸化珪素被膜製造装置の内装中部7に
浸漬後、120分間保持した。なお、珪弗化水素酸水溶
液の濃度は4.0モル/リットルであり、成膜時の温度
が32℃となるようにした。A polycarbonate flat plate in which the b) layer and c) layer were laminated in this order (Example 2) and a polycarbonate flat plate in which the c) layer was not formed (Comparative Example 2) were
After being immersed in the interior middle part 7 of the silicon dioxide coating manufacturing apparatus shown in FIG. 1, it was held for 120 minutes. Note that the concentration of the hydrosilicofluoric acid aqueous solution was 4.0 mol/liter, and the temperature during film formation was 32°C.
【0032】b)層、c)層をこの順に積層したポリカ
ーボネート平板には透明均一な二酸化珪素被膜(d)層
)が形成されていた。得られたd)層の膜厚を調べたと
ころ約160nmであった。即ち、ポリカーボネート平
板上にはc)層d)層合わせて約200nmの二酸化珪
素被膜が得られたことになる。しかし、c)層を形成し
なかったポリカーボネート平板は依然表面疎水性であり
、二酸化珪素被膜(d)層)の形成は認められなかった
。A transparent uniform silicon dioxide coating (layer d) was formed on a polycarbonate flat plate in which layers b) and c) were laminated in this order. The thickness of the obtained layer d) was examined and found to be approximately 160 nm. That is, a silicon dioxide coating having a total thickness of about 200 nm was obtained on the polycarbonate flat plate, including layers c) and d). However, the surface of the polycarbonate flat plate on which layer c) was not formed was still hydrophobic, and no formation of the silicon dioxide film (layer d) was observed.
【0033】上記二酸化珪素被膜(c)層プラスd)層
)は、セロハン粘着テープを貼り付けて引き剥すテスト
では全く剥がれない強固な付着力を有するものであった
。また、沸騰水中に1時間浸漬したが、付着力に変化は
なかった。The silicon dioxide coating (layer c) plus layer d) had such strong adhesion that it did not peel off at all in a test in which cellophane adhesive tape was applied and peeled off. In addition, even though it was immersed in boiling water for 1 hour, there was no change in adhesive strength.
【0034】実施例3、比較例3
γ−アミノプロピルトリエトキシシラン 10重量部を
イソプロピルアルコール 1000重量部に希釈してb
)層形成用の塗布液とした。この塗布液を予め洗浄した
縦100mm横100mm厚さ1.1mmのポリカーボ
ネート平板に浸漬法で塗布し、80℃の熱風乾燥炉で3
0分間熱処理した。ポリカーボネート平板上には約15
nmのb)層が形成されていた。Example 3, Comparative Example 3 10 parts by weight of γ-aminopropyltriethoxysilane was diluted with 1000 parts by weight of isopropyl alcohol.
) It was used as a coating liquid for layer formation. This coating solution was applied by dipping onto a polycarbonate flat plate measuring 100 mm long, 100 mm wide and 1.1 mm thick, which had been cleaned in advance, and then dried in a hot air drying oven at 80°C for 30 minutes.
Heat treatment was performed for 0 minutes. Approximately 15 on the polycarbonate plate
A layer b) of nm was formed.
【0035】上記b)層を形成したポリカーボネート平
板を第1図に示した二酸化珪素被膜製造装置の内装中部
7に浸漬後、30分間保持することによって二酸化珪素
被膜(c)層)を作成した。 なお、二酸化珪素被膜
製造装置内を循環する珪弗化水素酸水溶液の濃度は1.
8モル/リットルであり、ヒーター4を調節して成膜時
の温度が30℃となるようにした。The polycarbonate flat plate on which the layer b) was formed was immersed in the interior middle part 7 of the silicon dioxide coating production apparatus shown in FIG. 1, and then held for 30 minutes to form a silicon dioxide coating (layer c). Note that the concentration of the hydrosilicofluoric acid aqueous solution circulating in the silicon dioxide film manufacturing apparatus is 1.
8 mol/liter, and the heater 4 was adjusted so that the temperature during film formation was 30°C.
【0036】以上のようにしてポリカーボネート平板上
に透明均一性に優れた二酸化珪素被膜(c)層)が得ら
れた。被膜の厚さを調べたところ約30nmであった。
上記b)層、c)層をこの順に積層したポリカーボネー
ト平板(実施例3)および、b)層のみ被覆したポリカ
ーボネート平板(比較例3)を、第1図に示した二酸化
珪素被膜製造装置の内装中部7に浸漬後、60分間保持
した。なお、二酸化珪素被膜製造装置内を循環する珪弗
化水素酸水溶液の濃度は2.5モル/リットルであり、
ヒーター4を調節して成膜時の温度が40℃となるよう
にした。As described above, a silicon dioxide coating (layer c) having excellent transparency and uniformity was obtained on a polycarbonate flat plate. The thickness of the coating was examined and found to be approximately 30 nm. A polycarbonate flat plate (Example 3) in which the above b) layer and c) layer were laminated in this order, and a polycarbonate flat plate (Comparative Example 3) coated with only the b) layer were used in the interior of the silicon dioxide coating manufacturing apparatus shown in Fig. 1. After being immersed in the middle part 7, it was held for 60 minutes. In addition, the concentration of the hydrosilicofluoric acid aqueous solution circulating in the silicon dioxide film manufacturing apparatus is 2.5 mol / liter,
The heater 4 was adjusted so that the temperature during film formation was 40°C.
【0037】b)層、c)層をこの順に積層したポリカ
ーボネート平板には透明均一な二酸化珪素被膜(d)層
)が形成されていた。得られたd)層の膜厚を調べたと
ころ約70nmであった。即ち、ポリカーボネート平板
上にはc)層d)層合わせて約100nmの二酸化珪素
被膜が得られたことになる。しかし、b)層のみ被覆し
たポリカーボネート平板は依然表面疎水性であり、二酸
化珪素被膜(d)層)の形成は認められなかった。A transparent and uniform silicon dioxide coating (layer d) was formed on the polycarbonate flat plate in which layers b) and c) were laminated in this order. The thickness of the obtained layer d) was examined and found to be approximately 70 nm. That is, a silicon dioxide film having a total thickness of about 100 nm was obtained on the polycarbonate flat plate by layer c) and layer d). However, the surface of the polycarbonate plate coated with only layer b) was still hydrophobic, and no formation of a silicon dioxide film (layer d) was observed.
【0038】上記二酸化珪素被膜( c)層プラスd
)層 )は、セロハン粘着テープを貼り付けて引き剥
すテストでは全く剥がれない強固な付着力を有するもの
であった。また、沸騰水中に1時間浸漬したが、付着力
に変化はなかった。実施例1〜3、比較例1〜3の結果
から、c)層の形成が、析出法のあらゆる条件下におい
てもプラスチック成形体表面に二酸化珪素被膜形成を可
能にしていることがわかる。[0038] The silicon dioxide coating (c) layer plus d
) Layer ) had a strong adhesive strength that did not peel off at all in a test in which cellophane adhesive tape was attached and peeled off. In addition, even though it was immersed in boiling water for 1 hour, there was no change in adhesive strength. From the results of Examples 1 to 3 and Comparative Examples 1 to 3, it can be seen that the formation of layer c) enables the formation of a silicon dioxide film on the surface of the plastic molded body even under all conditions of the precipitation method.
【0039】実施例4〜6、比較例4〜6γ−アミノプ
ロピルトリエトキシシラン 10重量部をイソプロピル
アルコール 1000重量部に希釈してb)層形成用の
塗布液とした。この塗布液を予め洗浄した縦100mm
横100mm厚さ1.1mmのポリカーボネート平板、
および縦100mm横100mm厚さ100μmのポリ
カーボネートフィルムに浸漬法で塗布し、80℃の熱風
乾燥炉で30分間熱処理した。ポリカーボネート平板、
フィルムには約15nmのb)層が形成されていた。Examples 4 to 6, Comparative Examples 4 to 6 10 parts by weight of γ-aminopropyltriethoxysilane was diluted with 1000 parts by weight of isopropyl alcohol to prepare a coating solution for forming layer b). A length of 100 mm was cleaned in advance with this coating solution.
Polycarbonate flat plate, 100mm wide and 1.1mm thick.
Then, it was applied by dipping onto a polycarbonate film measuring 100 mm long, 100 mm wide and 100 μm thick, and heat-treated in a hot air drying oven at 80° C. for 30 minutes. polycarbonate flat plate,
A layer b) of about 15 nm was formed on the film.
【0040】上記b)層を形成したポリカーボネート平
板およびフィルムを第1図に示した二酸化珪素被膜製造
装置の内装中部7に浸漬後、20分間保持することによ
って二酸化珪素被膜(c)層)を作成した。なお、二酸
化珪素被膜製造装置内を循環する珪弗化水素酸水溶液の
濃度は1.5モル/リットルであり、ヒーター4を調節
して成膜時の温度が28℃となるようにした。The polycarbonate flat plate and film on which the above b) layer was formed were immersed in the interior middle part 7 of the silicon dioxide coating manufacturing apparatus shown in FIG. 1, and then held for 20 minutes to form a silicon dioxide coating (layer c). did. The concentration of the hydrosilicofluoric acid aqueous solution circulating in the silicon dioxide film manufacturing apparatus was 1.5 mol/liter, and the heater 4 was adjusted so that the temperature during film formation was 28°C.
【0041】以上のようにしてポリカーボネート平板上
に透明均一性に優れた二酸化珪素被膜(c)層)が得ら
れた。被膜の厚さを調べたところ約20nmであった。
上記b)層、c)層をこの順に積層したポリカーボネー
ト平板およびフィルムを、第1図に示した二酸化珪素被
膜製造装置の内装中部7に、第1表に示した各析出法の
条件(30℃、濃度2.5〜4.0モル/リットル)で
約60〜100分間浸漬することによってに、ポリカー
ボネート平板およびフィルム上に各々100nmの均一
な厚みで透明な二酸化珪素被膜(d)層)を形成した。
ポリカーボネート平板およびフィルムには透明かつ均一
厚みのd)層が形成されていた。As described above, a silicon dioxide coating (layer c) having excellent transparency and uniformity was obtained on a polycarbonate flat plate. The thickness of the coating was examined and found to be approximately 20 nm. The polycarbonate flat plate and film in which the above b) layer and c) layer were laminated in this order were placed in the interior middle part 7 of the silicon dioxide film manufacturing apparatus shown in Fig. 1 under the conditions of each precipitation method shown in Table 1 (30°C , concentration 2.5-4.0 mol/liter) for about 60-100 minutes to form a transparent silicon dioxide film (d) layer) with a uniform thickness of 100 nm each on the polycarbonate flat plate and film. did. A transparent and uniformly thick layer d) was formed on the polycarbonate plate and film.
【0042】上記二酸化珪素被膜( c)層プラスd
)層 )は、セロハン粘着テープを貼り付けて引き剥
すテストでは全く剥がれない強固な付着力を有するもの
であった。また、沸騰水中に1時間浸漬したが、付着力
に変化はなかった。[0042] The silicon dioxide coating (c) layer plus d
) Layer ) had a strong adhesive strength that did not peel off at all in a test in which cellophane adhesive tape was attached and peeled off. In addition, even though it was immersed in boiling water for 1 hour, there was no change in adhesive strength.
【0043】各得られたポリカーボネート平板の吸水率
をJISK−6911法に基づき、また、ポリカーボネ
ートフィルムの水蒸気透過率をJISZ−0208法(
40℃、90%RH)に基づいて測定した。結果を第1
表に示す。なお、表1には比較のため、d)層の析出法
の条件を30℃、濃度1.0〜2.0モル/リットルで
得られたものを比較例4および5として、また未処理の
ポリカーボネート平板およびポリカーボネートフィルム
の測定結果を比較例6として併せて記載した。第1表よ
り珪素濃度の高い処理液を使用して作成した二酸化珪素
被膜ほど緻密であり、ガスバリヤー性が高いと推察され
る。[0043] The water absorption rate of each obtained polycarbonate flat plate was determined based on the JISK-6911 method, and the water vapor permeability of the polycarbonate film was determined based on the JISZ-0208 method (
40° C., 90% RH). Results first
Shown in the table. For comparison, Table 1 includes Comparative Examples 4 and 5, which were obtained under the conditions of the d) layer precipitation method at 30°C and a concentration of 1.0 to 2.0 mol/liter, and untreated samples. The measurement results for the polycarbonate flat plate and polycarbonate film are also listed as Comparative Example 6. From Table 1, it is inferred that the silicon dioxide coating created using a treatment liquid with a higher silicon concentration is denser and has higher gas barrier properties.
【0044】比較例7〜9
c)層を形成しないこと以外は、実施例4〜6と全く同
様にして、b)層上に直接d)層の形成を試みた。その
結果を第2表に示す。第2表の結果より、c)層を形成
しないと、処理液の珪素濃度が濃くなるにしたがって二
酸化珪素被膜を得ることが困難になってくることがわか
る。すなわち、実施例4〜6および比較例7〜9の結果
から、c)層の形成が、プComparative Examples 7 to 9 An attempt was made to form the d) layer directly on the b) layer in exactly the same manner as in Examples 4 to 6 except that the c) layer was not formed. The results are shown in Table 2. From the results in Table 2, it can be seen that unless layer c) is formed, it becomes difficult to obtain a silicon dioxide film as the silicon concentration of the treatment liquid increases. That is, from the results of Examples 4 to 6 and Comparative Examples 7 to 9, it is clear that the formation of layer c)
【0045】
第1表
析出法条件 成膜温度
処理液濃度 透湿度
吸水率 (℃
) (モル/リットル) (g/24hr・m2)
(%) −−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−− 比較例4 30 1
.0 28.7
0.31 比較例5 30
2.0 12.0
0.20 実施例4 30
2.5
2.67 0.07 実施例5
30 3.0
1.97 0.03 実施
例6 30 4.0
1.88 0.
02 比較例6 −−−−
−−−−− 30.2
0.33[0045]
Table 1
Deposition method conditions Film forming temperature
Treatment liquid concentration Moisture permeability
Water absorption rate (℃
) (mol/liter) (g/24hr・m2)
(%) −−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
-- Comparative example 4 30 1
.. 0 28.7
0.31 Comparative example 5 30
2.0 12.0
0.20 Example 4 30
2.5
2.67 0.07 Example 5
30 3.0
1.97 0.03 Example 6 30 4.0
1.88 0.
02 Comparative Example 6 -----
------ 30.2
0.33
【0046】
第2表 d)層
析出条件 成膜温度 処
理液濃度 d)層外観
(℃) (モル/リットル)
−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−− 比較例7 30
2.5 一部白濁
比較例8 30
3.0 白濁、ムラあり
比較例9 30 4.0
成膜できず[0046]
Table 2 d) Layer deposition conditions Film forming temperature Processing solution concentration d) Layer appearance
(℃) (mol/liter)
−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−− Comparative example 7 30
2.5 Partial cloudiness
Comparative example 8 30
3.0 Cloudy, uneven
Comparative example 9 30 4.0
Unable to form film
【0047】ラスチック成形体表面に緻密な二酸化珪素
被膜の形成を可能にしていることが明らかである。It is clear that it is possible to form a dense silicon dioxide film on the surface of the plastic molded article.
【0048】実施例7〜9
実施例4〜6と全く同様にしてb)層およびc)層を形
成したポリカーボネート平板に第3表に示した各析出法
の条件によって、各100nmの二酸化珪素被膜(d)
層)を形成した。ポリカーボネート平板には透明で均一
厚みの二酸化珪素被膜(d)層)が形成されていた。ポ
リカーボネー基板にはc)層およびd)層を合わせて膜
厚が約120nmの二酸化珪素被膜が得られたことにな
る。Examples 7 to 9 A 100 nm silicon dioxide film was formed on a polycarbonate plate on which layers b) and c) were formed in exactly the same manner as in Examples 4 to 6, using the conditions of each deposition method shown in Table 3. (d)
layer) was formed. A transparent silicon dioxide coating (layer d) having a uniform thickness was formed on the polycarbonate flat plate. This means that a silicon dioxide film having a thickness of about 120 nm in total from layers c) and d) was obtained on the polycarbonate substrate.
【0049】上記二酸化珪素被膜(c)層、d)層)は
、いずれもセロハン粘着テープを貼り付けて引き剥すテ
ストでは全く剥がれない強固な付着力を有するものであ
った。また、沸騰水中に1時間浸漬したが、付着力に変
化はなかった。得られた各ポリカーボネート平板を所定
温度(85〜100℃)の温風乾燥機に入れ2時間後に
取り出し、クラック発生の有無を調べた。その結果を表
3に示す。表中○印は「クラック発生せず」を、Xは「
クラック発生する」ことを各々示す。Both of the silicon dioxide coatings (layer c) and layer d) had such strong adhesion that they did not peel off at all in a test in which cellophane adhesive tape was applied and peeled off. In addition, even though it was immersed in boiling water for 1 hour, there was no change in adhesive strength. Each of the obtained polycarbonate flat plates was placed in a hot air dryer at a predetermined temperature (85 to 100°C) and taken out after 2 hours, and the presence or absence of cracks was examined. The results are shown in Table 3. The ○ mark in the table means "no cracks", and the X mark "
Each indicates that cracks occur.
【0050】比較例10
実施例7〜9と全く同様にしてb)層を形成したポリカ
ーボネート平板に、実施例7〜9と全く同様の条件によ
り、120nm厚みのc)層を形成した。得られたポリ
カーボネート平板を所定温度の温風乾燥機に入れ2時間
後に取り出し、クラック発生の有無を調べた。その結果
を表3に示す。Comparative Example 10 A 120 nm thick layer c) was formed on a polycarbonate flat plate on which the layer b) had been formed in exactly the same manner as in Examples 7 to 9, under the same conditions as in Examples 7 to 9. The obtained polycarbonate flat plate was placed in a hot air dryer at a predetermined temperature and taken out after 2 hours, and the presence or absence of cracks was examined. The results are shown in Table 3.
【0051】第3表より実施例7〜9では比較例10に
比して二酸化珪素被膜に高い温度でクラックが発生しに
くく、この傾向は成膜温度が高い程大きいことがわかる
。From Table 3, it can be seen that in Examples 7 to 9, cracks are less likely to occur in the silicon dioxide coatings at high temperatures than in Comparative Example 10, and this tendency is greater as the film forming temperature is higher.
【0052】
第3表 析出法
条件 クラック
発生温度 成膜温度 処
理液濃度 85℃ 90℃ 95℃ 10
0℃ (℃) (モル/
リットル) −−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−− 実施例7 30
2.5 ○ X
X X 実施例8 35
2.5 ○
○ X X 実施例9
40 2.5 ○
○ ○ X 実施例1
0 −−−−− −−−−−−−
X X X
X[0052]
Table 3 Precipitation method conditions Crack generation temperature Film forming temperature Treatment liquid concentration 85℃ 90℃ 95℃ 10
0℃ (℃) (mol/
liter) −−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
--- Example 7 30
2.5 ○
X X Example 8 35
2.5 ○
○ X X Example 9
40 2.5 ○
○ ○ X Example 1
0 −−−−− −−−−−−−
X X X
X
【0053】
第4表 d)層
析出条件 成膜温度 処
理液濃度 d)層外観
(℃) (モル/リットル)
−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−− 比較例11 30
2.5 一部白濁
比較例12 35
2.5 白濁、ムラあり 比較
例13 40 2.5
成膜できず[0053]
Table 4 d) Layer deposition conditions Film forming temperature Processing solution concentration d) Layer appearance
(℃) (mol/liter)
−−−−−−−−−−−−−−−−−−−−−−−−
−−−−−−−−−−−−−−−−−−−−−−−−−
------- Comparative example 11 30
2.5 Partial cloudiness
Comparative example 12 35
2.5 Cloudy, uneven Comparative example 13 40 2.5
Unable to form film
【0054】比較例11〜13
c)層を形成しないこと以外は、実施例7〜9と全く同
様にして、b)層上に直接d)層の形成を試みた。その
結果を第4表に示す。第4表の結果より、c)層を形成
しないと、高温で成膜するにしたがって二酸化珪素被膜
を得ることが困難になってくることがわかる。すなわち
、実施例7〜9及び比較例11〜13の結果から、c)
層の形成がプラスチック成形体表面にクラックの発生し
にくい二酸化珪素被膜の形成を可能にしていることが明
らかである。Comparative Examples 11-13 An attempt was made to form the d) layer directly on the b) layer in exactly the same manner as in Examples 7 to 9 except that the c) layer was not formed. The results are shown in Table 4. From the results in Table 4, it can be seen that unless layer c) is formed, it becomes more difficult to obtain a silicon dioxide film as the film is formed at a higher temperature. That is, from the results of Examples 7 to 9 and Comparative Examples 11 to 13, c)
It is clear that the formation of the layer makes it possible to form a silicon dioxide coating on the surface of the plastic molded article that is less likely to cause cracks.
【0055】[0055]
【発明の効果】以上詳述した通り、本発明の二酸化珪素
被覆体の製造方法は、予めプラスチック成形体その他の
基体表面に付着力良好な加水分解性オルガノシランを被
覆硬化させてなる層を形成し、析出法によって透明で厚
みが均一な膜の得られる条件で二酸化珪素被覆(c)層
)を行い、さらに、析出法で二酸化珪素被覆(d)層)
を行うものであり、c)層の形成により、緻密な二酸化
珪素被膜を得るために処理液中の珪素濃度を濃くしたり
、温度を高くするなど、析出法のあらゆる条件下でも、
透明で厚みの均一性に優れ、かつガスバリヤー性および
吸水防止性が高く、高温度でのクラック発生のすくない
二酸化珪素被膜(d)層)を基体表面上に得ることが可
能になった。Effects of the Invention As detailed above, the method for manufacturing a silicon dioxide coated body of the present invention is to form a layer formed by coating and curing a hydrolyzable organosilane with good adhesion on the surface of a plastic molded body or other substrate in advance. Then, a silicon dioxide coating (c) layer) is applied by a precipitation method under conditions that allow a transparent film with a uniform thickness to be obtained, and then a silicon dioxide coating (d) layer) is applied by a precipitation method.
c) Under all conditions of the precipitation method, such as increasing the silicon concentration in the treatment solution and increasing the temperature, in order to obtain a dense silicon dioxide film by forming a layer,
It has become possible to obtain on the substrate surface a transparent silicon dioxide coating (layer d) which is transparent, has excellent thickness uniformity, has high gas barrier properties and water absorption prevention properties, and is less likely to crack at high temperatures.
【図1】 本発明を実施するために使用した二酸化珪
素被膜製造装置の系統説明図である。FIG. 1 is a system explanatory diagram of a silicon dioxide film manufacturing apparatus used to carry out the present invention.
1…外槽 2…内槽3…水
4…ヒーター5…攪
拌機 6…内槽前部7…内槽中
部 8…内槽後部9…洗浄液槽
10…5%HF水溶液11…フィルタ
ー 12…循環ポンプ13…三方コック
14…基体1...Outer tank 2...Inner tank 3...Water 4...Heater 5...Agitator 6...Inner tank front 7...Inner tank middle 8...Inner tank rear 9...Cleaning liquid tank
10...5% HF aqueous solution 11...Filter 12...Circulation pump 13...Three-way cock
14...Base
Claims (7)
イダルシリカからなる群より選ばれた少なくとも1種の
珪素化合物を被覆硬化させてなる層、 c)二酸化珪素が過飽和状態にある所定の珪素濃度の珪
弗化水素酸水溶液(イ)を前記b)層に接触させて形成
させた二酸化珪素被膜の層、及び d)二酸化珪素が過飽和状態にあり、かつ前記珪弗化水
素酸水溶液(イ)の珪素濃度よりも高い珪素濃度を有す
る珪弗化水素酸水溶液(ロ)を前記c)層に接触させて
形成させた二酸化珪素被膜の層、をa)、b)、c)お
よびd)の順に積層してなる二酸化珪素被覆体。Claim 1: a) a substrate; b) a layer formed by coating and curing at least one silicon compound selected from the group consisting of organosilanes, their hydrolysates, and colloidal silica; c) supersaturated silicon dioxide; a layer of a silicon dioxide film formed by contacting the aqueous solution of hydrosilicofluoric acid (a) with a predetermined silicon concentration in a state of A layer of a silicon dioxide film formed by contacting the layer c) with an aqueous silicofluoric acid solution (b) having a silicon concentration higher than that of the aqueous hydrofluoric acid solution (a), a), b) , c) and d) are laminated in this order.
0モル/リットル以下の珪素濃度を有し、前記珪弗化水
素酸水溶液(ロ)は2.5モル/リットル以上の珪素濃
度を有する特許請求の範囲第1項記載の二酸化珪素被覆
体。2. The hydrosilicofluoric acid aqueous solution (a) is 2.
The silicon dioxide coated body according to claim 1, wherein the silicon dioxide-coated body has a silicon concentration of 0 mol/liter or less, and the hydrosilicofluoric acid aqueous solution (b) has a silicon concentration of 2.5 mol/liter or more.
)で示される珪素化合物である特許請求の範囲第1項記
載の二酸化珪素被覆体。 R1nSi(R2)4−n (1) (式中R1は炭素数1〜6の炭化水素基、ビニル基、メ
タクリロキシ基、アミノ基、メルカプト基、エポキシ基
、または弗素もしくは塩素を有する有機基であり、R2
はアルコキシ基、アルコキシアルコキシ基、アセトキシ
基または塩素元素であり、nは0〜2の整数である。)[Claim 3] The organosilane has the following general formula (1
) The silicon dioxide coated body according to claim 1, which is a silicon compound represented by: R1nSi(R2)4-n (1) (wherein R1 is a hydrocarbon group having 1 to 6 carbon atoms, a vinyl group, a methacryloxy group, an amino group, a mercapto group, an epoxy group, or an organic group having fluorine or chlorine. , R2
is an alkoxy group, an alkoxyalkoxy group, an acetoxy group, or a chlorine element, and n is an integer of 0 to 2. )
特許請求の範囲第1項記載の二酸化珪素被覆体。4. The silicon dioxide coated body according to claim 1, wherein the base body is a plastic molded body.
R1nSi(R2)4−n (1) (式中R1は炭素数1〜6の炭化水素基、ビニル基、メ
タクリロキシ基、アミノ基、メルカプト基、エポキシ基
、または弗素もしくは塩素を有する有機基であり、R2
はアルコキシ基、アルコキシアルコキシ基、アセトキシ
基または塩素元素であり、nは0〜2の整数である。)
で示される珪素化合物、それらの加水分解物、およびコ
ロイダルシリカからなる群より選ばれた少なくとも1種
の珪素化合物を被覆硬化させ、 c)二酸化珪素が過飽和状態にあり珪素濃度が2.0モ
ル/リットル以下である珪弗化水素酸水溶液を前記b)
層に接触させて、その上に二酸化珪素被膜を形成し、d
)さらに二酸化珪素が過飽和状態にあり珪素濃度が2.
5モル/リットル以上である珪弗化水素酸水溶液を前記
c)層に接触させて、該c)層上に二酸化珪素被膜を形
成することを特徴とする二酸化珪素被覆基体の製造方法
。Claim 5: a) on the surface of the substrate, b) the following general formula (1):
R1nSi(R2)4-n (1) (wherein R1 is a hydrocarbon group having 1 to 6 carbon atoms, a vinyl group, a methacryloxy group, an amino group, a mercapto group, an epoxy group, or an organic group having fluorine or chlorine. , R2
is an alkoxy group, an alkoxyalkoxy group, an acetoxy group, or a chlorine element, and n is an integer of 0 to 2. )
c) At least one silicon compound selected from the group consisting of silicon compounds represented by the formula, their hydrolysates, and colloidal silica is coated and cured, and c) silicon dioxide is supersaturated and the silicon concentration is 2.0 mol/ liter or less of the hydrosilicofluoric acid aqueous solution in b) above.
contacting the layer and forming a silicon dioxide coating thereon; d
) Furthermore, silicon dioxide is in a supersaturated state and the silicon concentration is 2.
A method for producing a silicon dioxide-coated substrate, which comprises contacting the layer c) with an aqueous solution of hydrosilicofluoric acid having a concentration of 5 mol/liter or more to form a silicon dioxide coating on the layer c).
は珪弗化水素酸水溶液(イ)の珪素濃度よりも0.6〜
2.5モル/リットル高い特許請求の範囲第1項記載の
二酸化珪素被覆基体。6. The silicon concentration of the hydrosilicofluoric acid aqueous solution (b) is 0.6 to 0.6 to
The silicon dioxide-coated substrate according to claim 1, which has a high content of 2.5 mol/liter.
温度は30℃以下であり、珪弗化水素酸水溶液(ロ)の
前記接触温度は25℃以上である特許請求の範囲第1項
記載の二酸化珪素被覆基体。7. Claim 1, wherein the contact temperature of the aqueous solution of hydrosilicofluoric acid (a) is 30° C. or lower, and the contact temperature of the aqueous solution of hydrosilicic acid (b) is 25° C. or higher. The silicon dioxide-coated substrate described in Section 1.
Priority Applications (1)
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JP3013034A JP2969980B2 (en) | 1991-01-10 | 1991-01-10 | Silicon dioxide coated body and method for producing the same |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3013034A JP2969980B2 (en) | 1991-01-10 | 1991-01-10 | Silicon dioxide coated body and method for producing the same |
Publications (2)
Publication Number | Publication Date |
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JPH04239038A true JPH04239038A (en) | 1992-08-26 |
JP2969980B2 JP2969980B2 (en) | 1999-11-02 |
Family
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