JPH0423458A - Dip cooling apparatus - Google Patents
Dip cooling apparatusInfo
- Publication number
- JPH0423458A JPH0423458A JP2126581A JP12658190A JPH0423458A JP H0423458 A JPH0423458 A JP H0423458A JP 2126581 A JP2126581 A JP 2126581A JP 12658190 A JP12658190 A JP 12658190A JP H0423458 A JPH0423458 A JP H0423458A
- Authority
- JP
- Japan
- Prior art keywords
- cooling
- zone
- semiconductor element
- bubbles
- refrigerant liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 21
- 239000003507 refrigerant Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 13
- 238000007654 immersion Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 6
- 230000010349 pulsation Effects 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000011084 recovery Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
浸漬冷却装置に係り、特にフロロカーボン等の冷媒液中
に半導体素子が実装された基板を直接浸漬させて、半導
体素子が発する熱によってフロロカーボンが沸騰するた
め、その時の気化熱によりかかる半導体素子を冷却する
浸漬冷却装置に関し、半導体素子単位の熱抵抗を低下さ
せ、且つ半導体素子や基板に対するストレスを軽減する
ことを目的とし、
半導体素子が実装された基板を、その内部に冷媒液が充
填された冷却室に配置し、当該冷媒液にて該半導体素子
を冷却してなる浸漬冷却装置において、前記冷却室を気
泡回収ゾーンと冷却ゾーンに分割し、該ゾーンの境界に
前記半導体素子の実装位置に対応して該冷却ゾーンで発
生した気泡を該気泡回収ゾーンに逃がすスリットを有す
る膜体を形成するよう構成する。[Detailed Description of the Invention] [Summary] This relates to an immersion cooling device, in particular, in which a substrate on which a semiconductor element is mounted is directly immersed in a refrigerant liquid such as fluorocarbon, and the fluorocarbon boils due to the heat generated by the semiconductor element. Regarding immersion cooling equipment that cools semiconductor elements using the heat of vaporization of In an immersion cooling device that is arranged in a cooling chamber filled with a refrigerant liquid and cools the semiconductor element with the refrigerant liquid, the cooling chamber is divided into a bubble recovery zone and a cooling zone, and the boundary between the zones is divided. A membrane body is formed having slits corresponding to the mounting positions of the semiconductor elements to allow bubbles generated in the cooling zone to escape to the bubble recovery zone.
本発明は、浸漬冷却装置に係り、特にフロロカーボン等
の冷媒液中に半導体素子が実装された基板を直接浸漬さ
せて、半導体素子が発する熱によってフロロカーボンが
沸騰するため、その時の気比熱によりかかる半導体素子
を冷却する浸漬冷却装置に関するものである。The present invention relates to an immersion cooling device, in particular, in which a substrate on which a semiconductor element is mounted is directly immersed in a refrigerant liquid such as fluorocarbon, and the fluorocarbon is boiled by the heat generated by the semiconductor element. This invention relates to an immersion cooling device for cooling elements.
従来は、第５図に示すように、半導体素子５２が実装さ
れた基板５１の縁部を、図示中下面が開口された冷却ブ
ロック５３にフランジ６０およびシールリング５４を介
して密閉する。よって、冷却ブロック５３と基板５１間
に冷却室５５が構成される。Conventionally, as shown in FIG. 5, the edge of a substrate 51 on which a semiconductor element 52 is mounted is sealed via a flange 60 and a seal ring 54 to a cooling block 53 whose lower surface is open in the drawing. Therefore, a cooling chamber 55 is configured between the cooling block 53 and the substrate 51.
この冷却ブロック５３は一端にフロロカーボンが供給さ
れる供給口５７を有し、他端にフロロカーボンが搬出さ
れる排出口５８を有しており、この供給口５７からフロ
ロカーボンを供給し、半導体素子５２を冷却した後のフ
ロロカーボンは排出口５８から排出される。The cooling block 53 has a supply port 57 to which fluorocarbon is supplied at one end, and a discharge port 58 from which the fluorocarbon is discharged at the other end. The cooled fluorocarbon is discharged from the discharge port 58.
尚、５６は半導体素子を冷却することで発生ずる気泡で
あり、５９は接続用のカプラである。Note that 56 is a bubble generated by cooling the semiconductor element, and 59 is a coupler for connection.
［発明が解決しようとする課題］
しかしながら、従来の装置では、半導体素子を冷却する
ことで発生する気泡が下流側に流動することによって、
下流側に配置された半導体素子の冷却に悪影響を及ぼし
、また気泡が冷媒液と混合されることにより脈動（液体
圧力の変動）が発生し、その圧力の高低の振幅によって
半導体素子や基板に瞬間的で且つ不規則なストレスが加
わるということがあった。[Problems to be Solved by the Invention] However, in conventional devices, air bubbles generated by cooling a semiconductor element flow downstream, resulting in
This has a negative effect on the cooling of semiconductor devices placed downstream, and when air bubbles are mixed with the refrigerant liquid, pulsations (fluctuations in liquid pressure) occur, and the amplitude of the high and low pressure causes momentary damage to semiconductor devices and substrates. There were times when stress was added to me on a regular and irregular basis.
従って、本発明は半導体素子単位の熱抵抗を低下させ、
且つ半導体素子や基板に対するストレスを軽減すること
を目的とするものである。Therefore, the present invention reduces the thermal resistance of each semiconductor element,
Another purpose is to reduce stress on semiconductor elements and substrates.
上記目的は、半導体素子２が実装された基板１を、その
内部に冷媒液が充填された冷却室に配置し、当該冷媒液
にて該半導体素子２を冷却してなる浸漬冷却装置におい
て、
前記冷却室を気泡回収ゾーン８と冷却ゾーン７に分割し
、該ゾーンの境界に前記半導体素子２の実装位置に対応
して該冷却ゾーン７で発生した気泡１２を該気泡回収ゾ
ーン８に逃がすスリット１３を有する膜体６を形成した
ことを特徴とする浸漬冷却装置、により達成される。The above object is an immersion cooling device in which a substrate 1 on which a semiconductor element 2 is mounted is placed in a cooling chamber filled with a refrigerant liquid, and the semiconductor element 2 is cooled with the refrigerant liquid. The cooling chamber is divided into a bubble recovery zone 8 and a cooling zone 7, and a slit 13 is provided at the boundary between the zones to allow bubbles 12 generated in the cooling zone 7 to escape to the bubble recovery zone 8, corresponding to the mounting position of the semiconductor element 2. This is achieved by an immersion cooling device characterized by forming a membrane body 6 having the following characteristics.
即ち、本発明においては、スリッ１〜を有する膜体を介
して気泡を集中的に冷却装置の外部に排出する気泡回収
ゾーンを冷却ゾーンと分割して設けたことにより、冷媒
液と半導体素子間の熱抵抗を低下させることができる。That is, in the present invention, by providing a bubble recovery zone which intensively discharges bubbles to the outside of the cooling device through the film body having the slits 1 to 1, which is separated from the cooling zone, the air bubbles are separated from the cooling zone. can reduce the thermal resistance of
また、脈動による半導体素子や基板に対するストレスは
、極薄の膜体の撓みによって吸収することができる。Furthermore, stress on the semiconductor element and substrate due to pulsation can be absorbed by the deflection of the extremely thin film body.
以下、本発明の実施例を第１図乃至第４図を用いて詳細
に説明する。Embodiments of the present invention will be described in detail below with reference to FIGS. 1 to 4.
第１図は、本発明の第１の実施例を示す図であり、
第２図は、第１図における一部拡大図であり、第３図は
、本発明の第２の実施例を示す図であり、
第４図は、本発明の第３の実施例を示す図である。FIG. 1 is a diagram showing a first embodiment of the present invention, FIG. 2 is a partially enlarged view of FIG. 1, and FIG. 3 is a diagram showing a second embodiment of the present invention. FIG. 4 is a diagram showing a third embodiment of the present invention.
図において、１は基板、２は半導体素子、３ば冷却ブロ
ック、４はフランジ、５はフタ、６ば膜体、７は冷却ゾ
ーン、８は気泡回収ゾーン、９はシールリング、１０は
供給口、１１．１１”は排出口、１２は気泡、１３はス
リット、１４は切込め １５はジャバラ、１６はカプラ
をそれぞれ示す。In the figure, 1 is a substrate, 2 is a semiconductor element, 3 is a cooling block, 4 is a flange, 5 is a lid, 6 is a membrane body, 7 is a cooling zone, 8 is a bubble collection zone, 9 is a seal ring, and 10 is a supply port , 11.11'' is a discharge port, 12 is a bubble, 13 is a slit, 14 is a notch, 15 is a bellows, and 16 is a coupler.
尚、第１図乃至第４図において、同一符号をふしたもの
は同一対象物をそれぞれ示す。In FIGS. 1 to 4, the same reference numerals indicate the same objects.
■第１の実施例の説明
第１図に示すように、半導体素子２が実装された基板１
の縁部を、図示中下面が開口された冷却ブロック３にフ
ランジ４およびシールリング９を介して密閉する。また
、図中上面も開口されており、冷媒液の排出側に排出口
が形成されたフタによって密閉されている。■Description of the first embodiment As shown in FIG. 1, a substrate 1 on which a semiconductor element 2 is mounted
The edge of the cooling block 3 is sealed via a flange 4 and a seal ring 9 to a cooling block 3 whose lower surface is open in the drawing. In addition, the upper surface in the figure is also open, and is sealed by a lid having a discharge port formed on the refrigerant liquid discharge side.
この冷却ブロック３はその内部が後述説明する膜体６に
よって、気泡回収ゾーン８と冷却ゾーン７とに分割され
ている。The inside of this cooling block 3 is divided into a bubble recovery zone 8 and a cooling zone 7 by a membrane 6 which will be described later.
更に、この冷却ブロック３は一端にフロロカーボンが供
給される供給口１０を有し、他端にフロロカーボンが排
出される排出口１１”を有しており、この供給口１０か
らフロロカーボンを供給し、半導体素子２を冷却した後
のフロロカーボンは排出口１１゛から排出される。Further, this cooling block 3 has a supply port 10 at one end through which fluorocarbon is supplied, and a discharge port 11'' through which fluorocarbon is discharged at the other end. After cooling the element 2, the fluorocarbon is discharged from the discharge port 11'.
上記膜体６はゴム体によりなる極薄なるものであって、
第２図に示すように、半導体素子２の実装位置に対応し
て、具体的には、流動する冷媒液の流速によって決定さ
れる位置に、半導体素子２を冷却する際に発生する気泡
１２が上昇し膜体６に到達する位置を予測してスリット
１３が形成されている。このスリット１３にはそれぞれ
、発生する気泡の大小に対処可能となるように切込み１
４が入っている。 冷却時において、かかる冷却ブロッ
ク３に冷媒液を供給すると、冷却ゾーン７冷却すること
で気泡１２が発生するが、この気泡１２は冷却ゾーン７
と気泡回収ゾーン８の境界に設けられた膜体６のスリッ
ト１３を通って、気泡回収ゾーン８に回収される。回収
された気泡１２は、排出口１１によって外部に排出され
る。The membrane body 6 is made of a rubber body and is extremely thin,
As shown in FIG. 2, bubbles 12 generated when the semiconductor element 2 is cooled are located at a position determined by the flow rate of the flowing refrigerant liquid, corresponding to the mounting position of the semiconductor element 2. The slit 13 is formed by predicting the position where it will rise and reach the membrane body 6. Each of these slits 13 has a cut size of 1 in order to be able to deal with the size of bubbles generated.
Contains 4. During cooling, when a refrigerant liquid is supplied to the cooling block 3, air bubbles 12 are generated by cooling the cooling zone 7;
The air bubbles pass through the slit 13 of the membrane 6 provided at the boundary between the air bubble collection zone 8 and are collected in the air bubble collection zone 8 . The collected air bubbles 12 are discharged to the outside through the discharge port 11.
一方、半導体素子２を冷却して加温された冷媒液はもう
一方の排出口１１”によって外部に排出される。On the other hand, the refrigerant liquid heated by cooling the semiconductor element 2 is discharged to the outside through the other discharge port 11''.
従って、スリット１３を有する膜体６を介して気泡１２
を集中的に冷却装置の外部に排出する気泡回収ゾーン８
を冷却ゾーン７と分割して設けたとにより、冷媒液と半
導体素子間の熱抵抗を低下させることができる。Therefore, the air bubbles 12 are passed through the membrane 6 having the slits 13.
Air bubble collection zone 8 that intensively discharges air to the outside of the cooling device
By providing the cooling zone 7 and the cooling zone 7 separately, it is possible to reduce the thermal resistance between the refrigerant liquid and the semiconductor element.
■第２の実施例の説明
第３図は、本発明の第２の実施例を示す図であり、第１
の実施例と異なる点は、基板１上には大小異なる種々の
半導体素子２が実装されている場合でも、その半導体素
子２から発生され、上昇する気泡１２の到達位置に対応
して膜体６にスリット１３′および切込み１４を入れれ
ばよい。■Explanation of the second embodiment FIG. 3 is a diagram showing the second embodiment of the present invention.
The difference from the embodiment is that even when various semiconductor elements 2 of different sizes are mounted on the substrate 1, the film body 6 is moved in accordance with the arrival position of the rising air bubbles 12 generated from the semiconductor elements 2. A slit 13' and a notch 14 may be made in the hole.
■第３の実施例の説明
第４図は、本発明の第３の実施例を示す図であり、半導
体素子２が発生する気泡１２が増加すると、気泡回収ゾ
ーン８の圧が高くなってしまう。■Description of the third embodiment FIG. 4 is a diagram showing the third embodiment of the present invention. As the number of bubbles 12 generated by the semiconductor element 2 increases, the pressure in the bubble recovery zone 8 increases. .
これでは、積極的に気泡１２を気泡回収ゾーン８に回収
させることが困難となってしまうため、圧を許容させる
ために冷却ブロック３の上部と接触するフタ５の部分に
ジャバラ１５を取付け、圧力の大きさによって、上記フ
タ５が上昇または下降することでその圧の常時均一なも
のとしている。In this case, it becomes difficult to actively collect the bubbles 12 into the bubble recovery zone 8, so in order to allow pressure, a bellows 15 is attached to the part of the lid 5 that contacts the upper part of the cooling block 3. Depending on the size of the lid 5, the lid 5 is raised or lowered to keep the pressure uniform at all times.
また、第１乃至第３の実施例を含め、気泡回収ゾーン８
と冷却ゾーン７の境界に位置する膜体６は、それを構成
するのが、ゴム性の極薄体であるため、気泡１２と冷媒
液とが混合されて発生する脈動は、その脈動のエネルギ
ーを膜体６に与え、膜体を破線のように撓ませることで
、半導体素子２や基板１に対して大きい圧力変動が発生
せず、半導体素子２や基板１にクラック、欠は等が発生
ずることがない。In addition, including the first to third embodiments, the air bubble collection zone 8
Since the film body 6 located at the boundary between the cooling zone 7 and the cooling zone 7 is made of an extremely thin rubber material, the pulsations generated when the bubbles 12 and the refrigerant liquid are mixed are absorbed by the energy of the pulsations. By applying this to the membrane body 6 and bending the membrane body as shown by the broken line, large pressure fluctuations do not occur on the semiconductor element 2 or the substrate 1, and cracks, chips, etc. occur on the semiconductor element 2 or the substrate 1. It never occurs.
以上の如く詳細に説明したように本発明によれば、以下
の様な効果がある。As described above in detail, the present invention has the following effects.
■上流側にある半導体素子の冷却により冷媒液から冷媒
沸騰によって発生した気泡が下流側の半導体素子表面に
達する確率が低下するので、半導体素子と冷媒液との熱
伝達を阻害せず、故に冷却効率が向上する。■ Cooling of the semiconductor element on the upstream side reduces the probability that bubbles generated from the refrigerant liquid due to refrigerant boiling will reach the surface of the semiconductor element on the downstream side, so the heat transfer between the semiconductor element and the refrigerant liquid is not inhibited, and therefore cooling Increased efficiency.
■冷媒液と気泡の混合による脈動を膜体が吸収するので
、半導体素子や半導体素子が基板への圧力変動が緩和さ
れ、半導体素子や基板へのストレスが減少し、信頼性が
向上する。■Since the membrane absorbs the pulsations caused by the mixing of the refrigerant liquid and air bubbles, pressure fluctuations on semiconductor elements and substrates are alleviated, stress on semiconductor elements and substrates is reduced, and reliability is improved.
第１図は、本発明の第１の実施例を示す図であり、
第２図は、第１図における一部拡大図であり、第３図は
、本発明の第２の実施例を示す図であり、
第４図は、本発明の第３の実施例を示す図であ第５図は
、従来例を示す図である。
図において、
１・・・・基板。
２・・・・半導体素子。
３・・・・冷却ブロック。
６・・・・膜体。
７・・・・冷却ゾーン。
８・・・・気泡回収ゾーン。
９・・・・シールリング。
１２・・・気泡。
１３・ ・ ・スリット。
をそれぞれ示す。FIG. 1 is a diagram showing a first embodiment of the present invention, FIG. 2 is a partially enlarged view of FIG. 1, and FIG. 3 is a diagram showing a second embodiment of the present invention. FIG. 4 is a diagram showing a third embodiment of the present invention, and FIG. 5 is a diagram showing a conventional example. In the figure: 1...Substrate. 2...Semiconductor element. 3...Cooling block. 6...Membrane body. 7... Cooling zone. 8...Bubble collection zone. 9... Seal ring. 12...Bubbles. 13... Slit. are shown respectively.
Claims (1)
部に冷媒液が充填された冷却室に配置し、当該冷媒液に
て該半導体素子（２）を冷却してなる浸漬冷却装置にお
いて、 前記冷却室を気泡回収ゾーン（８）と冷却ゾーン（７）
に分割し、該ゾーンの境界に前記半導体素子（２）の実
装位置に対応して該冷却ゾーン（７）で発生した気泡（
１２）を該気泡回収ゾーン（８）に逃がすスリット（１
３）を有する膜体（６）を形成したことを特徴とする浸
漬冷却装置。[Claims] A substrate (1) on which a semiconductor element (2) is mounted is placed in a cooling chamber filled with a refrigerant liquid, and the semiconductor element (2) is cooled with the refrigerant liquid. In the immersion cooling device, the cooling chamber is divided into an air bubble collection zone (8) and a cooling zone (7).
At the boundary of the zone, air bubbles (
12) into the bubble collection zone (8).
An immersion cooling device characterized by forming a membrane body (6) having the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2126581A JP2669924B2 (en) | 1990-05-18 | 1990-05-18 | Immersion cooling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2126581A JP2669924B2 (en) | 1990-05-18 | 1990-05-18 | Immersion cooling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0423458A true JPH0423458A (en) | 1992-01-27 |
| JP2669924B2 JP2669924B2 (en) | 1997-10-29 |
Family
ID=14938717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2126581A Expired - Lifetime JP2669924B2 (en) | 1990-05-18 | 1990-05-18 | Immersion cooling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2669924B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005004571A1 (en) * | 2003-06-30 | 2005-01-13 | Advantest Corporation | Cover for cooling heat generating element, heat generating element mounter and test head |
| JP2007202682A (en) * | 2006-01-31 | 2007-08-16 | Daikin Ind Ltd | Bed with air conditioner |
| JP2007244515A (en) * | 2006-03-14 | 2007-09-27 | Daikin Ind Ltd | Bed with air-conditioner |
| WO2017203847A1 (en) * | 2016-05-23 | 2017-11-30 | パナソニックＩｐマネジメント株式会社 | Cooling device, projector, and heat reception unit |
-
1990
- 1990-05-18 JP JP2126581A patent/JP2669924B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005004571A1 (en) * | 2003-06-30 | 2005-01-13 | Advantest Corporation | Cover for cooling heat generating element, heat generating element mounter and test head |
| JP2007202682A (en) * | 2006-01-31 | 2007-08-16 | Daikin Ind Ltd | Bed with air conditioner |
| JP2007244515A (en) * | 2006-03-14 | 2007-09-27 | Daikin Ind Ltd | Bed with air-conditioner |
| WO2017203847A1 (en) * | 2016-05-23 | 2017-11-30 | パナソニックＩｐマネジメント株式会社 | Cooling device, projector, and heat reception unit |
| JPWO2017203847A1 (en) * | 2016-05-23 | 2019-03-22 | パナソニックＩｐマネジメント株式会社 | Cooling device, projector, and heat receiving unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2669924B2 (en) | 1997-10-29 |
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