JPH04229626A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a semiconductor device which can prevent a defect, such as an electromigration or a stress migration, caused by the diffusion of an interconnection metal and which can enhance the reliability of a metal interconnection. CONSTITUTION:At a semiconductor device, an Al interconnection 13 is formed, via an Si oxide film 12, on an Si substrate 11 where an element such as a transistor or the like is formed. At the semiconductor device, the surface (at least one out of the upper face and the side face) of the interconnection 13 is a low index-number plane orientation such as {100} or {110}.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention relates to a semiconductor device.
In particular, the present invention relates to a semiconductor device and a method for manufacturing the same that improves the reliability of wiring.

0002

2. Description of the Related Art Conventionally, Al or Al alloys have been widely used for wiring of semiconductor devices. This is due to the ease of film formation, low resistance, and ease of contact formation with the substrate semiconductor.

The reliability of Al wiring has become a major problem as semiconductor devices become more highly integrated and elements become smaller. In particular, in fine interconnects with interconnect widths of submicrons or less, disconnection failures due to stress migration occur, which poses an extremely serious problem in terms of reliability. Also,
Hillocks occur in Al due to stress relaxation during the heat treatment process, and voids occur in wiring due to the addition of an insulating protective film. These are thought to be due to stress-related Al diffusion phenomena.

[0004] Electromigration is another factor that reduces the reliability of Al wiring. This phenomenon also becomes more noticeable as the wiring becomes finer and the current density applied to the wiring becomes higher. Electromigration is also a phenomenon related to Al diffusion phenomena associated with high current densities.

[0005] As a countermeasure against reliability deterioration due to electromigration, stress migration, etc., an Al alloy wiring to which a metal such as Cu is added has been proposed. This is a method characterized by precipitating a compound of an additive metal and Al at grain boundaries to provide a barrier to Al diffusion, thereby reducing these failure modes caused by the diffusion phenomenon.

However, it has been pointed out that this method cannot sufficiently maintain reliability, especially reliability against stress migration, for wiring whose wiring width is submicron or less. This is thought to be due to the fact that the wiring width is less than the average crystal grain of the wiring Al crystal grains and the grain boundary structure takes on a bamboo structure. Stress applied to grain boundaries is more concentrated at such bamboo grain boundaries than at normal grain boundaries. However, the compound of the additive metal and Al, which is a barrier to Al diffusion, does not uniformly precipitate at such grain boundaries. Therefore, it is thought that the cause of the above defect is that a sufficient barrier effect against Al diffusion cannot be obtained. A possible solution to this problem is to increase the concentration of the additive metal, but this method causes an increase in wiring resistance and deterioration of workability, which poses a serious problem in practical use.

Another method is to provide a wiring intermediate layer such as TiN. According to this method, the existence of the wiring intermediate layer reduces the probability that voids generated by migration will be connected in the film thickness direction, thereby improving reliability. Furthermore, since the bamboo grain boundaries are also separated by the wiring intermediate layer, stress concentration on the grain boundaries is alleviated, improving the reliability of wiring in the submicron region. However, there are problems such as an increase in wiring resistance due to the presence of the wiring intermediate layer, contact destruction due to reaction between the wiring and the wiring intermediate layer, and a decrease in corrosion resistance.

Furthermore, a method has been proposed in which an Al oxide film is provided as a wiring intermediate layer to form a laminated structure. According to this method, the reaction that occurs in the case of the TiN intermediate layer described above does not occur, and the drawbacks of TiN are avoided. but,
Although it is unlikely that voids generated by migration will be connected in the film thickness direction, no active method has been taken to suppress the diffusion of Al, and this cannot necessarily be said to be a sufficient countermeasure.

[0009]

[Problems to be Solved by the Invention] As described above, electromigration and stress migration have become major problems for metal wiring in conventional semiconductor devices as the elements become smaller, but the conventionally proposed countermeasures are The current situation is that neither of these measures is sufficient.

The present invention has been made in consideration of the above circumstances, and its purpose is to prevent defects caused by diffusion of wiring metal such as electromigration and stress migration, and to improve the reliability of metal wiring. An object of the present invention is to provide a semiconductor device and a method for manufacturing the same that can improve performance.

[0011]

[Means for Solving the Problems] The gist of the present invention is that the {110} or {1
By paying attention to the fact that the surface diffusion coefficient of the metal atoms constituting the wiring is smaller in a wiring structure in which the wiring is oriented with {100} or {110}, it is possible to realize a wiring structure in which the surface of the wiring is surrounded by {100} or {110}. It is in.

That is, the present invention (claim 1) provides a semiconductor device in which wiring is formed on a semiconductor substrate on which a predetermined element is formed via an insulating film. is characterized by having a low index plane orientation such as {100} or {110}.

Further, the present invention (claims 2 and 4) provides a method for manufacturing a semiconductor device having the above structure, in which {100
} After forming a base (orientation control layer) such as a semiconductor layer or barrier metal with an orientation of {100} or {110} on this base layer by ion cluster beam method, sputtering method, etc.
It is characterized by forming an oriented metal wiring layer.

Furthermore, the present invention (claim 3) provides a method for manufacturing a semiconductor device having the above structure, including sputtering metal particles obliquely onto the insulating film and irradiating the insulating film with an ion beam. It is characterized by forming a metal wiring layer with {100} or {110} orientation. Also,
Desirable embodiments of the present invention include the following (1) to (
5) can be mentioned. (1) Use aluminum or aluminum alloy as the wiring layer. (2) Use copper or copper alloy as the wiring layer. (3) Use gold or gold alloy as the wiring layer. (4) Use silver or a silver alloy as the wiring layer. (5) At least one of nitride, carbide, and boride of Ti, Zr, and Hf is used as the orientation control layer.

[0015]

[Function] According to the present invention, the wiring surface is {100} or {1
By using a low index plane orientation such as 10}, the wiring surface becomes a surface on which diffusion is not easy. Therefore, defects caused by diffusion such as stress migration and electromigration are less likely to occur, and it is possible to obtain highly reliable wiring with excellent resistance to these defects.

[0016] Here, it will be explained that the diffusion coefficient of a low index surface is low. In general, the diffusion rate behaves exponentially with respect to temperature, but at the same temperature, the surface diffusion rate differs depending on the surface orientation (plane orientation).
For Cu, it has been reported that at the same temperature, the lower the index surface, the slower the surface diffusion coefficient (Trans. M
etal. Soc. AIME vol. 224, p.
．． 593 (1962)). However, quantitative analysis of the surface diffusion rate and how it affects electromigration of interconnects are still unknown.

[0017] This time, the inventors' experiments revealed that 500
In the case of Al at a temperature of about 10°C, the ratio of diffusion rates between the (100) plane and the (111) plane, DS (100)/DS (111), is approximately 0.4 from measurements of the surface diffusion coefficient using the grooving method. , and further (110) plane and (111)
The ratio of the surface diffusion rates was found to be approximately 0.6. Regarding Cu, the ratio of diffusion rates between the (100) plane and the (111) plane is approximately 0.4 at about 700°C.
Furthermore, it was found that the ratio of diffusion rates between the (110) plane and the (111) plane was approximately 0.6. Furthermore, in the case of face-centered cubic lattices such as Al and Cu, it was found that the lower the index plane, the slower the surface diffusion rate at the same temperature.

[0018] That is, as a result of investigating Al, 500°C
A on (111), (110), (100) planes in
The surface diffusion coefficient of l is 2 x 10-6 cm2/sec.
, 1.2×10-6cm2/sec, 8×10-7c
m2/sec, and its activation energy is approximately 1.
It was 0eV. In addition, as a result of investigating Cu, 70
At 0°C, the surface diffusion coefficients of Cu on the (111), (110), and (100) planes are each 1.5 x 10-6 cm2.
/sec, 9×10-7cm2 /sec, 6×10
-7 cm2/sec, and its activation energy was about 2.0 eV, which was larger than that of Al. However, Cu is similar to Al in terms of dependence on plane orientation, and the results of investigation of Ag and Au were also similar. Therefore, it was found that Al, Cu, Ag, and Au crystals having a face-centered cubic lattice structure have similar dependence of diffusion coefficient on plane orientation. Based on this fact, surface diffusion can be reduced by making the wiring surface a low index surface.
It can be seen that defects caused by diffusion can be reduced.

Regarding the crystal orientation of the wiring metal, for example, in the case of Al or Al alloy, the (111) plane is preferentially oriented so as to minimize the surface energy. Conventionally, this (111
) Methods have been attempted to improve the reliability of wiring by making the orientation stronger. However, as mentioned above, making the wiring surface a (111) plane results in a structure in which the surface is a surface that is prone to surface diffusion, which is disadvantageous in terms of high reliability of the wiring.

On the other hand, it is known that the crystal orientation changes depending on conditions such as the underlying material, surface condition, and Al film deposition method. For example, it is known that Al(110) is epitaxially grown on Si(100) by the ion cluster beam (ICB) method (Applied
Surface Science vol 41/42
, p253). By using such a method, (
110) It is possible to form an oriented metal wiring layer, and it is possible to improve the reliability of the wiring. Furthermore, the present invention is not limited to this, but if a (100) or (110) metal wiring layer can be formed, it is possible to improve the reliability of the wiring.

[0021]

Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing the manufacturing process of a semiconductor device according to a first embodiment of the present invention, and this embodiment is an example using an ion cluster beam (ICB) method.

First, as shown in FIG. 1(a), a Si substrate 1 with a plane orientation (100) having desired elements formed on its surface is prepared.
A Si oxide film 12 is formed on the silicon oxide film 1, and contact holes are formed in necessary locations of the Si oxide film 12. Next, S
A Si film 13 is grown on the i-oxide film 12 by solid phase epitaxial growth. Here, the surface of the Si film 13 has a (100) orientation due to epitaxial growth from the underlying Si exposed in the contact hole.

Next, as shown in FIG. 1(b), Si(
100) Irradiate the Al ion cluster beam 14 onto the film 13. As a result, as shown in FIG. 1(c), Si
An Al(110) film 15 is grown on the (100) film 13. At this time, if conditions are selected that facilitate the growth of Al, for example, the base pressure is 1 x 10-6 Pa or less, the substrate temperature is 150°C, and the beam acceleration voltage is 500V,
The orientation of the Al film 15 can be easily set to (110). Thereafter, heat treatment, patterning, and further deposition of an insulating protective film 16 are performed to obtain a wiring structure as shown in FIG. 1(d).

Thus, according to this embodiment, the Si oxide film 1
A
The orientation of the l film 15 is set to (110). Therefore, the diffusion coefficient in the Al film 15 as the wiring metal layer is reduced, and resistance to defects caused by diffusion such as stress migration and electromigration can be improved.

FIG. 2 is a process sectional view for explaining a second embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted. This embodiment is an example using the ion beam sputtering method.

The ion beam sputtering method differs from general sputtering methods using plasma in that it is possible to control the momentum (energy) of ions that cause sputtering.
It is possible to create a high vacuum in the sputtering chamber, and there is little fluctuation in momentum due to scattering of sputtered particles.
It has the feature that it is possible to control the momentum of sputtered particles.

Using this method, a desired element is first formed, and as shown in FIG. Sputtered Al particles 21 are made incident at an appropriate angle and with an appropriate momentum with respect to the normal direction of the substrate surface. At this time, if necessary, the assist ion beam 22 is made incident from the normal direction of the substrate to perform sputtering on the substrate surface. Note that, for example, Ar or Xe is used as the ion beam for sputtering the Al target.

By this method, an Al film 15 having an orientation other than Al (111), for example (100), is formed on the Si oxide film 12. Thereafter, by performing heat treatment, patterning, and depositing an insulating protective film, a highly reliable wiring structure can be obtained in the same manner as in the embodiment using the ion cluster beam method described above. Furthermore, a similar highly reliable wiring structure can be obtained by using Cu instead of Al. Note that when processing the Cu film into wiring, C
Reactive ion etching may be performed while heating to a high temperature, for example 250 to 300° C., using l-based gas.

[0029] Next, the third
An example will be described using FIG. 3. FIG. 3 shows a sputtering device, which is a DC sputtering device, a high frequency sputtering device, or a magnetron sputtering device. Note that 31 is a target such as Cu, 32 is a semiconductor substrate covered with an insulating film, and 33 and 34 are electrodes.

In this embodiment, the electrode 33, the electrode 34, or both are provided obliquely at an appropriate angle with respect to the target-substrate direction of the sputtering apparatus.
A bias of several tens of volts to several hundred volts is applied to 3 and 34. The angle of incidence of the sputtering gas on the target can be controlled by this bias voltage, and by applying such a bias, the angle of incidence of sputtered atoms such as Cu on the substrate can be controlled.

[0031] Then, by sputter deposition from an oblique direction, Cu with an orientation other than the {111} plane, for example, the (100) plane, is
A film can be formed on the substrate 32, and highly reliable wiring can be obtained as in the second embodiment.

Next, a fourth embodiment using the obliquely incident ion cluster beam method will be described with reference to FIG. In addition, 4
Reference numeral 1 denotes an ion cluster beam source, which supplies an ion cluster beam of Cu or the like. 42 is a semiconductor substrate covered with an insulating film. 43 is an electrode, from several V to several 100
A bias of 0V can be applied.

In this embodiment, the substrate 42 is placed at an appropriate angle with respect to the beam source-electrode direction, and oblique evaporation is performed to form a Cu film with a (100) plane, for example, other than the {111} plane orientation. Highly reliable wiring can be obtained by further patterning. 0.1 obtained in this way
As a result of evaluating electromigration of ~0.5μm Cu wiring (0.4μm thickness, 1mm length) at 200℃ and 2MA/cm2, it was found that the time until 0.1% defect occurred was 4000 to 5000 hours. It was long enough.

FIG. 5 is a process sectional view for explaining a fifth embodiment of the present invention. This example is an example using anisotropic etching from an oblique direction. First, Figure 5 (a
), an Al film 52 is deposited by sputtering or the like on a semiconductor substrate 51 covered with an insulating film. Then,
As shown in FIG. 5(b), a photoresist 53 is selectively formed on the Al film 52, and using the resist 53 as a mask, the Al
The film 52 is anisotropically etched diagonally at a suitable angle.

Next, after removing the resist 53, as shown in FIG.
As shown in (c), a photoresist 54 is selectively formed on the slope of the Al film 52, and anisotropic etching is performed again from an oblique direction. Then, as shown in FIG. 5(d), the resist 54 is removed. As a result, a wiring having a triangular cross section of the Al film 52 is obtained. The surface of the wiring in such a cross section exhibits an orientation other than the {111} plane orientation. That is, the surface of the wiring becomes oriented in a low index plane, and the reliability of the wiring can be improved.

FIG. 6 is a process sectional view for explaining a sixth embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted. In this example, the underlying barrier metal is an orientation-controlled layer (orientation control layer).
This is an example.

First, the substrate 11 heated to a temperature of 500 to 600° C. is heated with, for example, TiCl4 at 10 sccm, NH
3 was housed in a chamber with a pressure of 20 sccm, a base pressure of 1 x 10-4 Pa or less, and an internal pressure of 10 to 100 Pa, and as shown in FIG.
The underlying barrier metal 63 is (100) oriented or (110)
) Oriented and deposited. Here, the barrier metal (10
0) For orientation, the substrate temperature is 600°C, TiCl4
The conditions are 10 sccm, NH3 20 sccm, and an internal pressure of 10 Pa. Furthermore, for (110) orientation, Ti
Cl4 10sccm, NH3 40sccm, internal pressure 1
It was found that the condition of 0 Pa should be selected.

Next, as shown in FIG. 6B, Al is deposited on the base TiN film 63 with the above orientation by, for example, sputtering.
The film 15 is deposited with (100) orientation or (110) orientation. Here, the orientation of the Al film 15 inherits the orientation of the underlying TiN film 63. Thereafter, patterning and insulating protective film deposition are performed to obtain desired wiring. Even with this method, the same effects as in the first embodiment can be obtained.

Next, an example will be described in which TiN is used as the underlayer by plasma CVD. In this example, for example, Ti(N(CH3)2)4 was
A gas bubbled with ccm of N2 and 20 sccm of H2 are excited by plasma discharge using microwaves, and introduced into the chamber to a pressure of 1 to 10 Pa. A (100) or (110) oriented TiN base film 63 is deposited on the substrate 11 heated to about 200° C. in this chamber.

TiN film 63 whose orientation was controlled in this way
As mentioned above, the Al film 15 is formed by sputtering, for example.
After depositing and patterning, a desired wiring structure is obtained by depositing an insulating protective film. According to this method, the manufacturing process can be carried out at a low temperature, and it can also be applied to Al wiring in the second and subsequent layers in a multilayer wiring structure. Next, {100} on TiN
100} The method for growing Al will be explained in more detail.

[0041] In TiN (NaCl type), Ti and N
When the X-ray diffraction spectrum of a TiN thin film formed by reactive sputtering on SiO2 was taken by changing the ratio from 0.9 to 1.3, the orientation changed depending on the Ti/N ratio, as shown in Figure 7. do. In FIG. 7, (a) shows TiN (
0.9), (b) is TiN (1.0), (c) is TiN
This is the case of (1.3).

In the case of TiN (0.9), (111) and (
200) appears almost equally, and a peak of (220) is also seen. However, in the case of TiN (1.0), (20
0) is observed. Moreover, when TiN becomes (1.3), the peak of (200) disappears, and the peak of (111) and (220) disappears.
) appears. Therefore, it can be seen that it is effective to define the composition ratio of Ti and N to around 1.0. here,
(200) is a plane parallel and equivalent to (100). Furthermore, according to the experiments conducted by the present inventors, the ratio of Ti and N (Ti/
It was found that by controlling TiN to within 1.00±0.05, the orientation of TiN could be controlled to only (100).

The lattice constant of TiN is 0.424 nm, which is about 5% different from that of Al, which is 0.40494 nm. If TiN has a (100) plane, for example, (200)
The interplanar spacing of the planes is 0.212 nm, and the (200) of Al is 0.
．． 2024nm, (111) is 0.2338nm, (2
20) is 0.1431 nm, and it can be seen that (200) Al grows on (200) TiN while minimizing lattice mismatch. Furthermore, the CVD-T used in the present invention
When formed by thermal CVD, iN is TiCl4
+NH3 + (1/2)H2 → TiN+
In the reaction system of 4HCl, there is little contamination of surplus N, and TiN having a TiN composition close to the normal composition (1±0.05) can be formed. In this case, the gas flow ratio is TiCl4:NH3:H2 =1:1:1/2

0
044], for example, 10 sccm,
10 sccm and 5 sccm. Further, the reaction temperature and pressure may be set to the same conditions as in the above-mentioned CVD method using TiCl4 and NH3, for example. Figure 8 shows TiN formed using the above reaction.
As shown in (200), only (200) was observed. If this method is used, the controllability of the N content is greatly improved compared to the method of the above-mentioned embodiments, and the controllability of the (200) orientation of TiN is also improved.

When Al is grown on the (100) TiN thus formed, Al, Al-Si (1%),
As a result of sputtering Al, Al-Si, and Al-Si-Cu using each target of Al-Si (1%)-Cu (0.2%), Al (200) was the preferred direction in all cases. It was observed as.

Here, the X-ray diffraction intensity ratio of Al (200), (111) and (220) was 100:1:1. Also, taking into account that the intensity ratio of the powder crystals is 47:100:22, (200), (111) and (2
20) is found to be 100:0.46:2.1. T where normal (111) and (100) are mixed
Al formed on iN has the strongest (111), and (1
The ratio of 11), (200) and (220) is 100:1:
It is 0.5. When we investigated the electromigration resistance of {100} oriented Al and {111} oriented Al, we found that the time required for 0.1% failure to occur at 200°C and 2 MA/cm2 is as long as the wiring width is 0.2 to 0.6 μm. 1m wide
It took 500 hours and 100 hours, respectively, for m-long wiring.

Furthermore, in order to align the orientation of Al, an Al ion beam (100 e
Deposition was carried out on {100} oriented TiN using a dielectric constant of 100 V or less. The vacuum device reduces the pressure to 1 x 10-9 Torr or less, and the partial pressure of water is 1 x 10-10 Torr or less,
During ion beam irradiation, the pressure was 10-4 to 10-5 Torr. If the ion energy exceeds 10 eV, the underlying insulating film will charge up and the insulation resistance will deteriorate, so either irradiate the substrate surface with electrons or control the energy of the incident ion beam with a substrate bias of 10 to 100 V.
In addition, it is necessary to apply a high frequency of 1 MHz to the substrate to suppress charge-up.

[0048] The Al (Al-Si) thus formed
-Cu) is (200) and (
The ratio of (111) and (220) can be 100:0:0. When we investigated the electromigration resistance of this Al, we found that it was 10
00 hours was obtained. Examining the current density at 85°C and 10 FIT, it is 1.4 x 106 A/cm,
Characteristics about 10 times better than conventional ones were obtained.

When the particle size of TiN is increased, the particle size of Al becomes larger. For example, when the particle size of TiN is 30 to 50 nm, the particle size of Al is 2 to 5 μm, whereas the particle size of TiN is 100 to 50 nm. When it comes to 300nm, the particle size of Al is 5 to 10μ.
m. Furthermore, when the particle size of TiN is 1 μm, A
The particle size of l can be as large as 20 μm. TiN
Enlargement of the particle size can be achieved by using CVD. Although it is also possible to grow grains using an electron beam or a laser beam, larger grains can be grown if TiN with a large grain size is formed at an early stage of film formation.

When used in multilayer interconnection, for example, as shown in FIG.
On the substrate 91, an insulating film 92 having a contact hole and a diffusion layer 93 are formed on the surface of the Si substrate under the contact hole. Next, a silicide film 94 of TiSi2 or NiSi2 is selectively formed at the bottom of the contact hole, and then a W film is formed. The inside of the contact hole is filled by selective growth to form a plug 55. On the W plug 55,
TiN (200) is easy to grow. Therefore, the insulating film 92
and a {100} oriented TiN film 96 on the surface of the W plug 95.
It becomes possible to grow. A {100} oriented Al film 97 is grown thereon by the method described above. Care must be taken to make the stepped portion as flat as possible.

It should be noted that the present invention is not limited to the above-mentioned embodiments. In the embodiment, Al and Cu are used as the metal wiring, but Ag and Au can also be applied in exactly the same way, and furthermore, alloys of these can also be used. Furthermore, the surface orientation of the metal wiring layer is (100
) or (110), but the equivalent orientation {1
Of course, it may be 00} or {110}. In addition, the orientation control layer is not limited to TiN, for example, Z
rN, HfN, TiC, ZrC, HfC, TiB2,
Orientation may be controlled using ZrB2 and HfB2. In addition, various modifications can be made without departing from the gist of the present invention.

[0052]

Effects of the Invention As detailed above, according to the present invention, metal wiring having a {110} or {100} orientation, which has a smaller surface diffusion coefficient of metal atoms than the conventionally used {111} orientation, can be used. As a result, it is possible to realize a highly reliable metal wiring against defects caused by diffusion of wiring metal such as electromigration and stress migration.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing the manufacturing process of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a process sectional view for explaining a second embodiment of the present invention;

FIG. 3 is a schematic configuration diagram showing a sputtering apparatus used in a third embodiment of the present invention;

FIG. 4 is a schematic diagram for explaining a fourth embodiment of the present invention,

FIG. 5 is a process sectional view for explaining the fifth embodiment of the present invention;

FIG. 6 is a process sectional view for explaining the sixth embodiment of the present invention;

FIG. 7 is a characteristic diagram showing an X-ray diffraction spectrum showing the composition ratio and orientation of TiN;

FIG. 8 is a characteristic diagram showing the X-ray diffraction spectrum of TiN;

[
FIG. 9 is a sectional view for explaining an application example of the present invention.

[Explanation of symbols]

11...Si substrate, 12...Si oxide film, 13...Si(10
0) Film, 14...Ion cluster beam, 15...Al film (
metal wiring layer), 16... protective insulating film, 21... Al particles, 2
2... Assist ion beam 31... Target, 32, 4
2, 51... Semiconductor substrate, 33, 34, 43... Electrode, 41
...Ion cluster beam source, 52...Al film, 53, 54
...Photoresist, 63...TiN film.

Claims (4)

[Claims] 1. A semiconductor device in which wiring is formed on a semiconductor substrate on which an element is formed via an insulating film, wherein the surface of the wiring is oriented in {100} or {110}. . 2. A method for manufacturing a semiconductor device in which wiring is formed on a semiconductor substrate on which an element is formed via an insulating film, the step of forming a {100}-oriented semiconductor layer on the insulating film; A method for manufacturing a semiconductor device, comprising the step of forming a {110}-oriented metal wiring layer on a semiconductor layer by an ion cluster beam method. 3. A method for manufacturing a semiconductor device in which wiring is formed on a semiconductor substrate on which elements are formed via an insulating film, comprising:
Metal particles are sputter-deposited on the insulating film from an oblique direction, and the insulating film is irradiated with an ion beam to form {1
1. A method for manufacturing a semiconductor device, comprising forming a metal wiring layer with an orientation of {00} or {110}. 4. A method for manufacturing a semiconductor device in which wiring is formed on a semiconductor substrate on which elements are formed via an insulating film, comprising:
a step of forming an orientation control layer with a {100} or {110} orientation on the insulating film by a CVD method; and a step of forming a metal wiring layer with a {100} or {110} orientation on the orientation control layer. A method for manufacturing a semiconductor device, comprising: