JPH04224193A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPH04224193A JPH04224193A JP40776390A JP40776390A JPH04224193A JP H04224193 A JPH04224193 A JP H04224193A JP 40776390 A JP40776390 A JP 40776390A JP 40776390 A JP40776390 A JP 40776390A JP H04224193 A JPH04224193 A JP H04224193A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- gas
- growth
- pipe
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000007789 gas Substances 0.000 claims abstract description 46
- 239000002887 superconductor Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000012159 carrier gas Substances 0.000 claims abstract description 9
- 238000005192 partition Methods 0.000 claims abstract description 8
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims description 14
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 150000002366 halogen compounds Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 2
- 229910001640 calcium iodide Inorganic materials 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001643 strontium iodide Inorganic materials 0.000 description 2
- KRIJWFBRWPCESA-UHFFFAOYSA-L strontium iodide Chemical compound [Sr+2].[I-].[I-] KRIJWFBRWPCESA-UHFFFAOYSA-L 0.000 description 2
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は気相成長装置に係り、特
に該装置でのガス排出機構に関する。気相成長で成長す
る酸化物超伝導体は液化窒素温素（７７Ｋ）以上で超伝
導状態となり、将来の超高速コンピュータへの応用が期
待されている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus, and more particularly to a gas exhaust mechanism in the apparatus. Oxide superconductors grown by vapor phase growth become superconducting at temperatures above liquefied nitrogen (77K), and are expected to be used in future ultrahigh-speed computers.
【０００２】0002
【従来の技術】Ｂｉ 系酸化物超伝導体は例えば４種の
組成元素それぞれのハロゲン化合物原料を用いてハライ
ドＣＶＤ（化学的気相成長）装置を用いて成長を行って
いた。図２は上記従来のＣＶＤ装置の一例を示す断面図
である。図２は、ハロゲン化合物原料として、Ｂｉｃｌ
３１，ＣｕＢｒ２２，ＣａＩ２３， ＳｒＩ２４を用い
てＢｉ −Ｓｒ −Ｃａ−Ｃｕ −Ｏ系超伝導体を成長
する例である。各原料はヒータ５〜８でガス化されＨｅ
ガスで成長室１５へ運ばれ、基板１２上で超伝導体を
成長させ、未反応ガスはガス排出孔１６から排出され更
にガス排出管１７からＣＶＤ装置外へ排出される。ガス
排出管が付けられた部分は、装置外への基板取り出し口
を兼ねるため部分的に取り外し可能になっていてＯリン
グにより装置外部との気密を保っている。BACKGROUND OF THE INVENTION Bi-based oxide superconductors have been grown using, for example, a halide CVD (chemical vapor deposition) apparatus using halogen compound raw materials of each of four compositional elements. FIG. 2 is a sectional view showing an example of the conventional CVD apparatus. Figure 2 shows Bicl as a halogen compound raw material.
This is an example of growing a Bi-Sr-Ca-Cu-O superconductor using 31, CuBr22, CaI23, and SrI24. Each raw material is gasified by heaters 5 to 8 and He
The gas is transported to the growth chamber 15 to grow a superconductor on the substrate 12, and unreacted gas is exhausted from the gas exhaust hole 16 and further exhausted from the gas exhaust pipe 17 to the outside of the CVD apparatus. The part to which the gas exhaust pipe is attached is partially removable because it also serves as an opening for taking out the substrate to the outside of the apparatus, and is kept airtight from the outside of the apparatus by an O-ring.
【０００３】0003
【発明が解決しようとする課題】上記ハロゲン化合物原
料ガスが分解し、酸素と結合・固体化する一連のＣＶＤ
反応は成長領域内から装置外へ排出される迄続くため装
置内壁には超伝導体が粉状に堆積する。特に、基板取り
出し口１８に堆積した粉状超伝導体は基板を装置内へセ
ットする時や、取り出す時に落下し、基板を汚染する場
合がある。また、粉状超伝導体はＯリングに付着し装置
外部との気密性を低下させる場合もある。[Problems to be Solved by the Invention] A series of CVD processes in which the above-mentioned halogen compound raw material gas is decomposed, combined with oxygen, and solidified.
Since the reaction continues until the superconductor is discharged from the growth region to the outside of the apparatus, the superconductor is deposited in powder form on the inner wall of the apparatus. In particular, the powdered superconductor deposited in the substrate take-out port 18 may fall and contaminate the substrate when the substrate is set in or taken out of the apparatus. Further, the powdered superconductor may adhere to the O-ring and reduce the airtightness with the outside of the device.
【０００４】本発明は反応生成物による装置内汚染を防
止することを目的とする。[0004] The object of the present invention is to prevent contamination of the inside of the apparatus by reaction products.
【０００５】[0005]
【発明を解決するための手段】上記課題は本発明によれ
ばキャリアガス供給管（２１）と、該キャリアガス供給
管（２１）に連通した超伝導体成長用原料室（１０）と
、該超伝導体成長用原料室（１０）からの原料ガスを用
いて基板上に超伝導体を成長させ且つ未反応ガス排出孔
（１６）を有する超伝導体成長室（１５）と、前記未反
応ガス排出孔（１６）から排出された未反応ガスを装置
外へ排出する未反応ガス排出管（１７）とを具備する気
相成長装置において、前記未反応ガス排出孔（１６）の
近傍に前記未反応ガス排出管（１７）の入口を設け且つ
該未反応ガス排出管（１７）は前記超伝導体成長室（１
５）末端近傍に設けられた仕切板（１９）を介して配設
されていることを特徴とする気相成長装置によって解決
される。Means for Solving the Invention According to the present invention, the above problem is solved by providing a carrier gas supply pipe (21), a superconductor growth raw material chamber (10) communicating with the carrier gas supply pipe (21), and a carrier gas supply pipe (21). A superconductor growth chamber (15) for growing a superconductor on a substrate using the raw material gas from the superconductor growth raw material chamber (10) and having an unreacted gas exhaust hole (16); In a vapor phase growth apparatus equipped with an unreacted gas exhaust pipe (17) for discharging unreacted gas discharged from the gas exhaust hole (16) to the outside of the apparatus, the unreacted gas exhaust pipe (17) is provided with a An inlet of an unreacted gas exhaust pipe (17) is provided, and the unreacted gas exhaust pipe (17) is connected to the superconductor growth chamber (1).
5) The problem is solved by a vapor phase growth apparatus characterized in that it is disposed through a partition plate (19) provided near the end.
【０００６】本発明では前記未反応ガス排出管（１７）
と前記仕切板（１９）との間隙から前記超伝導体成長室
（１５）へパージガスとしてのガスを供給することが好
ましい。[0006] In the present invention, the unreacted gas discharge pipe (17)
It is preferable to supply gas as a purge gas to the superconductor growth chamber (15) from the gap between the superconductor growth chamber (15) and the partition plate (19).
【０００７】[0007]
【作用】本発明によれば未反応ガスが装置の最外壁迄到
達せず、スムースに排出させるため、従来の基板汚染を
防止できる。According to the present invention, unreacted gas does not reach the outermost wall of the device and is smoothly discharged, thereby preventing the conventional substrate contamination.
【０００８】[0008]
【実施例】以下本発明のＣＶＤ装置実施例を図面に基づ
いて説明する。図１に、本発明をＢｉ −Ｓｒ −Ｃａ
−Ｃｕ −Ｏ系超伝導体成長装置に適用した例を示す
。原料１〜４には例えば１：ＢｉＣｌ３，２：ＣｕＢｒ
２，３：ＣａＩ２， ４：ＳｒＩ２を用い、ヒータ５〜
８で、それぞれ例えば１５０ ℃， ４１０ ℃， ７
６０ ℃， ７６０ ℃に加熱して上記ハロゲン化合物
原料をガス化させ、キャリアガス供給管２１を介してＨ
ｅ ガスを成長室１５へ輸送する。成長室１５はヒータ
９で、例えば７６０ ℃に加熱されている。超伝導体を
成長させる基板１２には例えば ＭｇＯ基板を用い、成
長室１５内で酸素供給管１１で送られた酸素ガスと原料
ガスを反応させ超伝導体を成長させる。この後、未反応
の原料を含むガスは排出孔１６を通り広がるが、ガス排
出管１７が成長領域１４から直接装置外へ排出すること
と仕切板１９によって基板取り出し口１８近傍への超伝
導体の堆積を防ぐことができる。また、仕切板１９と基
板取り出し口と１８の間の空間へは、パージガス供給管
２０によって送られたＨｅ ガスを充満させ、仕切板１
９とガス排出管１７との隙間から成長領域１４へと抜け
原料ガスの侵入を抑制する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a CVD apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 shows the present invention in Bi-Sr-Ca
An example of application to a -Cu-O based superconductor growth apparatus will be shown. Raw materials 1 to 4 include, for example, 1:BiCl3, 2:CuBr
2, 3: CaI2, 4: SrI2, heater 5~
8, respectively, for example, 150 ℃, 410 ℃, 7
The halogen compound raw material is gasified by heating to 60 °C and 760 °C, and H is supplied through the carrier gas supply pipe 21.
e. Transport the gas to the growth chamber 15. The growth chamber 15 is heated to, for example, 760° C. by a heater 9. For example, an MgO substrate is used as the substrate 12 on which the superconductor is grown, and the superconductor is grown by causing the oxygen gas sent through the oxygen supply pipe 11 to react with the source gas in the growth chamber 15. After this, the gas containing unreacted raw materials spreads through the exhaust hole 16, but the gas exhaust pipe 17 discharges the superconductor from the growth region 14 directly to the outside of the apparatus, and the partition plate 19 allows the superconductor to flow into the vicinity of the substrate outlet 18. can prevent the accumulation of In addition, the space between the partition plate 19 and the substrate outlet 18 is filled with He gas sent through the purge gas supply pipe 20, and
Intrusion of raw material gas into the growth region 14 from the gap between the gas discharge tube 9 and the gas discharge pipe 17 is suppressed.
【０００９】[0009]
【発明の効果】以上説明したように本発明によれば、基
板取り出し口近傍への超伝導体の堆積を無くすことがで
きるため、基板を装置内へセットする時と取り出す時に
粉状超伝導体が落下して基板を汚染することが無くなる
。[Effects of the Invention] As explained above, according to the present invention, it is possible to eliminate the accumulation of superconductor in the vicinity of the substrate take-out port, so that the powdered superconductor is removed when the substrate is set in and taken out of the apparatus. No more falling and contaminating the board.
【図１】本発明の実施例を示す図である。FIG. 1 is a diagram showing an embodiment of the present invention.
【図２】従来例を示す図である。FIG. 2 is a diagram showing a conventional example.
１…ＢｉＣｌ３ ２…ＣｕＢｒ２ ３…ＣａＩ２ ４…ＳｒＩ２ ５〜９…ヒーター １０…原料室 １１…酸素導入管 １２…ＭｇＯ 基板 １３…Ｂｉ 系酸化物超伝導体 １４…成長領域 １５…成長室 １６…ガス排出孔 １７…ガス排出管 １８…基板取り出し口 １９…仕切板 ２０…パージガス供給管 ２１…キャリアガス供給管 1...BiCl3 2...CuBr2 3...CaI2 4...SrI2 5-9...Heater 10...Raw material room 11...Oxygen introduction tube 12...MgO substrate 13...Bi-based oxide superconductor 14...Growth area 15...Growth room 16...Gas exhaust hole 17...Gas exhaust pipe 18... Board removal port 19...Partition plate 20...Purge gas supply pipe 21...Carrier gas supply pipe
Claims (4)
ャリアガス供給管（２１）に連通した超伝導体成長用原
料室（１０）と、該超伝導体成長用原料室（１０）から
の原料ガスを用いて基板上に超伝導体を成長させ且つ未
反応ガス排出孔（１６）を有する超伝導体成長室（１５
）と、前記未反応ガス排出孔（１６）から排出された未
反応ガスを装置外へ排出する未反応ガス排出管（１７）
とを具備する気相成長装置において、前記未反応ガス排
出孔（１６）の近傍に前記未反応ガス排出管（１７）の
入口を設け且つ該未反応ガス排出管（１７）は前記超伝
導体成長室（１５）末端近傍に設けられた仕切板（１９
）を介して配設されていることを特徴とする気相成長装
置。Claim 1: A carrier gas supply pipe (21), a superconductor growth raw material chamber (10) communicating with the carrier gas supply pipe (21), and a superconductor growth raw material chamber (10) connected to the carrier gas supply pipe (21); A superconductor growth chamber (15) that grows a superconductor on a substrate using source gas and has an unreacted gas exhaust hole (16).
), and an unreacted gas discharge pipe (17) for discharging the unreacted gas discharged from the unreacted gas discharge hole (16) to the outside of the apparatus.
In the vapor phase growth apparatus, the inlet of the unreacted gas exhaust pipe (17) is provided near the unreacted gas exhaust hole (16), and the unreacted gas exhaust pipe (17) is connected to the superconductor. A partition plate (19) provided near the end of the growth chamber (15)
).) A vapor phase growth apparatus.
仕切板（１９）との間隙から前記超伝導体成長室（１５
）へガスを供給することを特徴とする請求項１記載の装
置。2. The superconductor growth chamber (15) is discharged from the gap between the unreacted gas exhaust pipe (17) and the partition plate (19).
2. Device according to claim 1, characterized in that it supplies gas to ).
るガスがＨｅ ガスであることを特徴とする請求項２記
載の装置。3. The apparatus according to claim 2, wherein the gas supplied to the superconductor growth chamber (15) is He 2 gas.
体であることを特徴とする請求項１記載の装置。4. The device according to claim 1, wherein the superconductor is a Bi 2 -based oxide superconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40776390A JPH04224193A (en) | 1990-12-27 | 1990-12-27 | Vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40776390A JPH04224193A (en) | 1990-12-27 | 1990-12-27 | Vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04224193A true JPH04224193A (en) | 1992-08-13 |
Family
ID=18517316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40776390A Withdrawn JPH04224193A (en) | 1990-12-27 | 1990-12-27 | Vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04224193A (en) |
-
1990
- 1990-12-27 JP JP40776390A patent/JPH04224193A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20040086642A1 (en) | Method and apparatus for feeding gas phase reactant into a reaction chamber | |
| KR101318940B1 (en) | Device and method for high-throughput chemical vapor deposition | |
| US20080245302A1 (en) | Simple chemical vapor deposition systems for depositing multiple-metal aluminide coatings | |
| EP0209150B1 (en) | Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor | |
| JPS63119226A (en) | Chemical evaporation system | |
| JPH01125821A (en) | Vapor growth device | |
| JPH06206718A (en) | Extra-high purity silicon carbide and high temperature semiconductor processing device produced by said silicon carbide | |
| US5458086A (en) | Apparatus for growing metal oxides using organometallic vapor phase epitaxy | |
| JPH04224193A (en) | Vapor growth device | |
| JP2715817B2 (en) | Thin film vapor deposition equipment | |
| JP2526852Y2 (en) | Apparatus for vapor phase growth of oxide superconducting thin film | |
| CN113604875B (en) | Vapor phase epitaxy system and maintenance operation method thereof | |
| JPH0447955Y2 (en) | ||
| JPH04221076A (en) | Oxide thin film growing apparatus | |
| JPH058672Y2 (en) | ||
| JPH051069Y2 (en) | ||
| JPS62244123A (en) | Vapor growth device | |
| JPH0715133Y2 (en) | Reaction tube of semiconductor thin film forming equipment | |
| JPH0776090B2 (en) | Method for manufacturing zirconia thin film | |
| JPH03274274A (en) | Growth system for oxide film | |
| JPH0339476A (en) | Gas introducing device for cvd device | |
| JPH03273616A (en) | Cvd apparatus | |
| JPS63190327A (en) | Vapor growth device | |
| JPS62296426A (en) | Cvd thin film formation apparatus | |
| JPS6273707A (en) | Semiconductor manufacturing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980312 |